• Polymer(Korea)
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• v.36 no.5
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• pp.622-627
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• 2012

This study focuses on mechanical property enhancement and volatile organic compounds (VOCs) reduction characteristic of environmentally-friendly waterborne coatings. We synthesized a series of organic-inorganic hybrid waterborne polyurethanes by using poly(tetramethylene glycol) 2000, polycarbonate diol 2000, isophorone diisocyanate, dimethylolpropionic acid and titanium dioxide. The study on the effects of the R ratio([NCO]/[OH]) and inorganic contents on environmentally-friendly waterborne coatings showed that the R ratio with more than 1.5 is appropriate due to arrangement of hardsegments. The applied $TiO_2$ on films reduced volatile organic compounds (VOCs).

• Bulletin of the Korean Chemical Society
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• v.34 no.11
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• pp.3399-3404
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• 2013

A new accepter unit, pyrrolo[3,2-b]pyrrole-2,5-dione, was prepared and utilized for the synthesis of the conjugated polymers containing electron donor-acceptor pair for OPVs. Pyrrolo[3,2-b]pyrrole-2,5-dione unit, regioisomer of the known pyrrolo[3,4-c]pyrrole-1,4-dione, is originated from the structure of stable synthetic pigment. The new conjugated polymers with 1,4-diphenylpyrrolo[3,2-b]pyrrole-2,5-dione, thiophene and carbazole were synthesized using Suzuki polymerization to generate P1 and P2. The solid films of P1 and P2 show absorption bands with maximum peaks at about 377, 554 and 374, 542 nm and the absorption onsets at 670 and 674 nm, corresponding to band gaps of 1.85 and 1.84 eV, respectively. To improve the hole mobility of the polymer with 1,4-bis(4-butylphenyl)-pyrrolo[3,2-b]-pyrrole-2,5-dione unit, which was previously reported by us, the butyl group at the 4-positions of the N-substituted phenyl group was substituted with hydrogen and methyl group. The field-effect hole mobility of P2 is $9.6{\times}10^{-5}cm^2/Vs$. The device with $P2:PC_{71}BM$ (1:2) showed $V_{OC}$ value of 0.84 V, $J_{SC}$ value of 5.10 $mA/cm^2$, and FF of 0.33, giving PCE of 1.42%.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.104-104
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• 2016

음극아크증착과 스퍼터링을 동시에 사용한 하이브리드 공정으로 제조된 TiAlSiN 코팅층의 물성을 평가하였다. TiAlSiN 코팅층은 음극아크 소스에 Ti-Al 타겟을 장착하고 스퍼터링 소스에는 Si 타겟을 장착하여 아르곤과 질소 가스의 혼합가스 분위기에서 스테인리스(SUS304)와 초경(cemented carbide; WC-15wt.%Co) 기판 위에 제조되었다. 음극아크 소스에 인가되는 전류는 고정하고 스퍼터링 소스에 인가되는 전력을 조절하여 TiAlSiN 코팅층의 Si 함량을 제어하였다. TiAlSiN 코팅층의 Si 함량이 증가하면 코팅층의 구조가 주상정에서 비정질 구조로 변화한다. 이는 Si 함량이 증가하면 코팅층에 형성되는 알갱이 구조의 크기가 줄어들기 때문이다. X-선 회절 결과와 Scherrer's equation을 이용하여 Si 함량에 따른 알갱이 구조의 크기를 계산하면 Si이 없는 코팅층은 약 14 nm의 크기를 보이며 8 at.% 이상의 함량에서 약 2.5 nm로 포화된다. TiAlSiN 코팅층의 경도를 Si 함량에 따라 측정하면 Si 함량이 증가하면 경도도 증가하는 경향을 보이며 약 9 at.%의 Si 함량에서 3200 Hv로 최대가 되고 이후에는 감소한다. TiAlSiN이 코팅된 스테인리스 시편을 대기에서 열처리하고 시편 무게증가를 측정하여 코팅층의 내열성을 평가하였다. Si 함량이 증가하면 내열성도 향상되는데 14.4 at.%의 Si 함량에서 $700^{\circ}C$까지 무게 증가가 없으며 $900^{\circ}C$까지 0.43 mg의 증가를 보인다. 본 실험을 통해서 얻어진 TiAlSiN 코팅층은 비교적 높은 경도와 내열성을 확보하여 절상공구 보호막 코팅 소재 등으로 활용이 가능할 것으로 판단된다.

• Bulletin of the Korean Chemical Society
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• v.33 no.6
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• pp.1861-1866
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• 2012

The new semiconducting copolymers with 4,4-dialkyl-$4H$-cyclopenta[2,1-$b$:3,4-$b^{\prime}$]dithiophene and 2,2-dimethyl-$2H$-benzimidazole units were synthesized. The fused aromatic rings, such as cyclopentadithiophene (CPDT) unit, can make the polymer backbone more rigid and coplanar, which induces long conjugation length, narrow band gap, and strong intermolecular ${\pi}-{\pi}$ interaction. The stacking ability was controlled through attaching of linear or branched alkyl side chains. The spectra of PEHCPDTMBI and PHCPDTMBI in the solid films show absorption bands with maximum peaks at 401, 759 and 407, 768 nm, and the absorption onsets at 925 and 954 nm, corresponding to band gaps of 1.34 and 1.30 eV, respectively. The devices comprising PHCPDTMBI with $TiO_X$ showed a $V_{OC}$ of 0.39 V, a $J_{SC}$ of 1.14 $mA/cm^2$, and a $FF$ of 0.34, giving a power conversion efficiency of 0.15%. The PHCPDTMBI with linear alkyl chain on CPDT shows good solubility in organic solvent with higher PCE value than that of PEHCPDTMBI.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.240.2-240.2
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• 2013

The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to $SiO_2$ (5 nm)/Si substrate. The 5-nm thick secondary $SiO_2$ layer was deposited on the mono-layered graphene by using ultra-high vacuum sputtering system which base pressure is about $1{\times}10^{-10}$ Torr. The $In_2O_3$ quantum dots were distributed on the secondary $SiO_2$2 layer after chemical reaction between deposited In layer and polyamic acid layer through soft baking at $125^{\circ}C$ for 30 min and curing process at $400^{\circ}C$ for 1 hr by using the furnace in $N_2$ ambient. The memory devices with the $In_2O_3$ quantum dots on graphene monolayer between $SiO_2$ thin films have demonstrated and evaluated for the application of next generation nonvolatile memory device. We will discuss the electrical properties to understating memory effect related with quantum mechanical transport between the $In_2O_3$ quantum dots and the Fermi level of graphene layer.

• Cartoon and Animation Studies
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• s.46
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• pp.63-84
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• 2017

Overwhelming images of vividly colored aircraft flying across the blue sky and steam gushing from massive machines are reminiscent of Japanese animation films, especially of works by master director Hayao Miyazaki. By presenting together steam engines, which are mechanical devices of the Industrial Age in the past, and aircraft of the future age, the director constructs ambiguous space and time. These special time and space constitute nostalgia for past time, with devices called steam engines as a medium, and a longing for science and the future as represented by aircraft. In addition, the anticipation and disappointment, ideals and regrets of humans who see these two from the perspective of the present are projected on the works. This shares the characteristic of the steam punk genre, which seeks to return to the past rather than to face current problems. A subgenre of science fiction (henceforth "sci-fi"), steam punk reflects fundamental skepticism of science and technology and mechanized civilization, which have developed beyond human control. In addition, as works that clearly display such characteristics, director Miyazaki's and < $Nausica{\ddot{a}}$ of the Valley of Wind> can be examined. With spectacles of steam engines and aircraft, these two works enticingly visualize narratives about nature and humans and about the environment and destruction. Such attractiveness on the part of the master director's works has led to support from fans worldwide. However, often in the backgrounds of director Miyazaki's works, which have depicted ideal worlds of nature, environment, and community as highly concentrated fantasies, lie presuppositions of war and the end of the world. As works that are especially prominent in such characteristics, there are and . These two works betray the expectations of the audience by establishing the actual wartime as the temporal background and proceeding toward narratives of reality. Trapped in the ontological identity of the director himself, the war depicted by him projects a subjective and romantic attitude. Such a problem stems also from the ambiguity of the hybrid space and time, which is basic to the steam punk genre. This is because the basic characteristic of steam punk is to transplant past time, which humans were able to control, in the future from a perspective of optimism and longing via steam engines rather than to face current problems. In this respect, steam punk animation films in themselves can be seen as having significance and limitations at the same time.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.184-184
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• 2012

Recently, InGaN/GaN multi-quantum well grown on GaN pyramid structures have attracted much attention due to their hybrid characteristics of quantum well, quantum wire, and quantum dot. This gives us broad band emission which will be useful for phosphor-free white light emitting diode. On the other hand, by using quantum dot emission on top of the pyramid, site selective single photon source could be realized. However, these structures still have several limitations for the single photon source. For instance, the quantum efficiency of quantum dot emission should be improved further. As detection systems have limited numerical aperture, collection efficiency is also important issue. It has been known that micro-cavities can be utilized to modify the radiative decay rate and to control the radiation pattern of quantum dot. Researchers have also been interested in nano-cavities using localized surface plasmon. Although the plasmonic cavities have small quality factor due to high loss of metal, it could have small mode volume because plasmonic wavelength is much smaller than the wavelength in the dielectric cavities. In this work, we used localized surface plasmon to improve efficiency of InGaN qunatum dot as a single photon emitter. We could easily get the localized surface plasmon mode after deposit the metal thin film because lnGaN/GaN multi quantum well has the pyramidal geometry. With numerical simulation (i.e., Finite Difference Time Domain method), we observed highly enhanced decay rate and modified radiation pattern. To confirm these localized surface plasmon effect experimentally, we deposited metal thin films on InGaN/GaN pyramid structures using e-beam deposition. Then, photoluminescence and time-resolved photoluminescence were carried out to measure the improvement of radiative decay rate (Purcell factor). By carrying out cathodoluminescence (CL) experiments, spatial-resolved CL images could also be obtained. As we mentioned before, collection efficiency is also important issue to make an efficient single photon emitter. To confirm the radiation pattern of quantum dot, Fourier optics system was used to capture the angular property of emission. We believe that highly focused localized surface plasmon around site-selective InGaN quantum dot could be a feasible single photon emitter.

• Polymer(Korea)
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• v.37 no.3
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• pp.373-378
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• 2013

The interfacial adhesion strength is very important in $SiO_x$ deposited PC film for the barrier enhanced polycarbonate (PC) flexible substrate. In this study, PC films were treated by undercoating, UV/$O_3$ and low temperature plasma and then the effect of physical and chemical surface modifications on the interfacial adhesion strength between PC film and $SiO_x$ barrier layer were studied. It was found that untreated PC film shows significantly low interfacial adhesion strength due to the smooth surface and low surface free energy of PC. Low temperature plasma treatments resulted in the increase of both surface roughness and surface free energy due to etching and the appearance of polar molecules on the PC surface. However, UV/$O_3$ treatment only shows the increase of surface free energy by developed polar molecules on the surface. These surface modifications caused the enhancement of surface interfacial strength between PC film and $SiO_x$ barrier. In the case of undercoating, it was found that the increase of surface interfacial strength was achieved by adhesion between various acrylic acid on acrylate coated surface and $SiO_x$ without increase of polar surface energy. In addition, the barrier property is also improved by organic-inorganic hybrid multilayer structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.383-383
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• 2014

최근 디스플레이, 태양전지 그리고 touch screen panels 등 optoelectronic 장치의 시장이 성장함에 따라 투명전극의 수요가 증가하고 있다. Indium tin oxide (ITO)의 좋은 특성 때문에 주로 투명전극에 많이 사용되고 있다. 그러나 화학적 안정성이 떨어지고, 휘어질 때 특성저하가 심하여 금속나노와이어, 탄소나노튜브, 전도성폴리머, 그리고 그래핀 등의 다른 투명전극의 연구가 활발히 진행되고 있다. 그 중에서 그래핀은 높은 전자 이동도(200000 cm2v-1s-1)와 휘어져도 전기적 크게 변하지 않는 특성 때문에 유망한 투명 전도성 전극 (Transparent Conductive Electrodes, TCEs)으로 연구되어왔다. 또한 다양한 속성 가운데, 높은 광 투과성은 그래핀의 가장 큰 장점이다 [1]. 최근, 화학 기상 증착 (Chemical Vapor Deposition, CVD) 등 다양한 제조 방법이 대량 생산을 위해 개발되었다. 그러나 이 방법은 비용이 많이 들며, 과정이 상당히 복잡하고 높은 온도 (${\sim}1000^{\circ}C$)를 필요로 한다. 따라서 용매 기반의 환원된 그래핀 산화물(Reduced Graphene Oxides, RGOs)이 최근 주목 받고 있다. 그러나 RGOs의 면저항이 높아 전극으로서 사용이 제한된다. 따라서 전기적 특성을 향상시키는 방법으로 단일 벽 탄소 나노튜브 (Single-Walled Carbon Nanotubes, SWNTs)를 혼합하거나 화학적 도핑을 통하여 면저항을 크게 향상시키는 연구가 활발히 진행되고 있다. 그러나 이런 화학적 도핑의 경우 박막이 공기 중에 직접 산소나 습기와 반응하여 전기적 특성이 저하되는 문제점을 가지고 있다 [2]. 이러한 문제를 해결하기 위해 AuCl3을 도핑한 박막에 내열성 및 내광성 등의 화학적 안정성이 뛰어난 PEDOT:PSS를 코팅하여 필름의 공기중의 노출을 막아 줌으로써 도핑의 안전성 및 전기적 특성을 최적화하였다. 본 연구에서는 간단한 dip-coating방법을 사용하여 4개의 RGO/SWNTs 박막을 흡착하였다. 다음으로 AuCl3를 도핑하여 면저항 $4.909K{\Omega}$, $4.381K{\Omega}$인 두 개의 샘플의 시간과 온도에 따른 면저항의 변화를 확인하였다. 그리고 필름의 도핑 안전성을 향상 시키기 위해 AuCl3를 도핑한 필름 위에 전도성 폴리머 PEDOT:PSS 코팅하여 면저항 $886.1{\Omega}$, $837.5{\Omega}$인 두 개의 샘플의 시간과 온도에 따른 면저항의 변화를 확인하였다. AuCl3 도핑된 필름의 경우 공기 중에 150시간 노출 시 72%의 면저항 증가가 발생하였지만 PEDOT:PSS가 코팅된 필름의 경우 5%의 면저항 증가가 나타나 확연한 차이를 보였다. 또한 AuCl3 도핑한 필름의 경우 $150^{\circ}C$에서 60시간동안 공기중에 노출되었을 때 525%의 면저항 증가가 발생하였지만 PEDOT:PSS가 코팅된 필름의 경우 58%의 면저항 증가를 나타내었다. 이것은 PEDOT:PSS가 passivation역할을 하여 필름이 공기에 노출된 부분을 막아주어 도핑된 필름의 면저항의 변화를 줄여 주었음을 알 수 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.183-184
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• 2013

Two main MBE growth techniques have been used: plasma-assisted MBE (PA-MBE), which utilizes a rf plasma to supply active nitrogen, and ammonia MBE, in which nitrogen is supplied by pyrolysis of NH3 on the sample surface during growth. PA-MBE is typically performed under metal-rich growth conditions, which results in the formation of gallium droplets on the sample surface and a narrow range of conditions for optimal growth. In contrast, high-quality GaN films can be grown by ammonia MBE under an excess nitrogen flux, which in principle should result in improved device uniformity due to the elimination of droplets and wider range of stable growth conditions. A drawback of ammonia MBE, on the other hand, is a serious memory effect of NH3 condensed on the cryo-panels and the vicinity of heaters, which ruins the control of critical growth stages, i.e. the native oxide desorption and the surface reconstruction, and the accurate control of V/III ratio, especially in the initial stage of seed layer growth. In this paper, we demonstrate that the reliable and reproducible growth of GaN on Si (110) substrates is successfully achieved by combining two MBE growth technologies using rf plasma and ammonia and setting a proper growth protocol. Samples were grown in a MBE system equipped with both a nitrogen rf plasma source (SVT) and an ammonia source. The ammonia gas purity was ＞99.9999% and further purified by using a getter filter. The custom-made injector designed to focus the ammonia flux onto the substrate was used for the gas delivery, while aluminum and gallium were provided via conventional effusion cells. The growth sequence to minimize the residual ammonia and subsequent memory effects is the following: (1) Native oxides are desorbed at $750^{\circ}C$ (Fig. (a) for [$1^-10$] and [001] azimuth) (2) 40 nm thick AlN is first grown using nitrogen rf plasma source at $900^{\circ}C$ nder the optimized condition to maintain the layer by layer growth of AlN buffer layer and slightly Al-rich condition. (Fig. (b)) (3) After switching to ammonia source, GaN growth is initiated with different V/III ratio and temperature conditions. A streaky RHEED pattern with an appearance of a weak ($2{\times}2$) reconstruction characteristic of Ga-polarity is observed all along the growth of subsequent GaN layer under optimized conditions. (Fig. (c)) The structural properties as well as dislocation densities as a function of growth conditions have been investigated using symmetrical and asymmetrical x-ray rocking curves. The electrical characteristics as a function of buffer and GaN layer growth conditions as well as the growth sequence will be also discussed. Figure: (a) RHEED pattern after oxide desorption (b) after 40 nm thick AlN growth using nitrogen rf plasma source and (c) after 600 nm thick GaN growth using ammonia source for (upper) [110] and (lower) [001] azimuth.