• 마이크로전자및패키징학회지
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• 제27권1호
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• pp.17-24
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• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.

• 반도체디스플레이기술학회지
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• 제21권1호
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• pp.142-147
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• 2022

After introducing Hybrid Bonding technology into image sensors using stacked sensors and image processors, large quantity production became possible. As a result, it is currently used in most of the CMOS image market in smartphones and other image-based devices worldwide, and almost all stacked CIS manufacturing sites have focused on miniaturization using hybrid bonding. In this study, an upper wafer handling module for Wafer to Wafer Hybrid Bonding developed to increase the alignment and precision between wafers when wafer bonding. The module was divided two parts to reduce error of both the alignment and degree of precision during wafer bonding. Wafer handling module developed both new Tip/Tilt system controlling θx,θy of upper wafer and striker to push upper wafer. Based on this, it was confirmed through the stability evaluation that the upper wafer handling module can be controlled without any problem during W2W hybrid bonding.

• 반도체디스플레이기술학회지
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• 제22권4호
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• pp.38-47
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• 2023

Three dimensional (3D) packaging is a next-generation packaging technology that vertically stacks chips such as memory devices. The necessity of 3D packaging is driven by the increasing demand for smaller, high-performance electronic devices (HPC, AI, HBM). Also, it facilitates innovative applications across another fields. With growing demand for high-performance devices, companies of semiconductor fields are trying advanced packaging techniques, including 2.5D and 3D packaging, MR-MUF, and hybrid bonding. These techniques are essential for achieving higher chip integration, but challenges in mass production and fine-pitch bump connectivity persist. Advanced bonding technologies are important for advancing the semiconductor industry. In this review, it was described 3D packaging technologies for chip integration including mass reflow, thermal compression bonding, laser assisted bonding, hybrid bonding.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.171-176
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• 2021

Die-to-wafer (D2W) hybrid bonding in the multilayer semiconductor manufacturing process is one of wafer direct bonding, and various studies are being conducted around the world. A noteworthy point in the current die-to-wafer process is that a lot of voids occur on the bonding surface of the die during bonding. In this study, as a suggested method for removing voids generated during the D2W hybrid bonding process, a flexible mechanism for implementing convex for die bonding to be applied to the bond head is proposed. In addition, modeling of flexible mechanisms, analysis/design/control/evaluation of static/dynamics properties are performed. The proposed system was controlled by capacitive sensor (lion precision, CPL 290), piezo actuator (P-888,91), and dSpace. This flexure mechanism implemented a working range of 200 ㎛, resolution(3σ) of 7.276nm, Inposition(3σ) of 3.503nm, settling time(2%) of 500.133ms by applying a reverse bridge type mechanism and leaf spring guide, and at the same time realized a maximum step difference of 6 ㎛ between die edge and center. The results of this study are applied to the D2W hybrid bonding process and are expected to bring about an effect of increasing semiconductor yield through void removal. In addition, it is expected that it can be utilized as a system that meets the convex variable amount required for each device by adjusting the elongation amount of the piezo actuator coupled to the flexible mechanism in a precise unit.

• 마이크로전자및패키징학회지
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• 제31권3호
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• pp.1-9
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• 2024

본 논문은 반도체 패키징 기술의 발전에서 Cu/Polymer 하이브리드 본딩 기술의 중요성을 다룬다. 인공지능(AI) 시대의 요구에 부응하여, 반도체 업계는 높은 I/O 수, 저전력, 고열 방출, 다기능성, 소형화를 달성하기 위해 이종 집적 패키징 기술을 탐구하고 있다. 기존의 Cu/SiO₂ 하이브리드 구조는 1nm 이하의 표면거칠기 달성을 위한 CMP 공정과의 호환성 및 파티클 원인의 접합부 결함 발생 등의 한계점이 존재하지만, Polymer를 사용한 Cu/Polymer 하이브리드 본딩 기술이 이를 극복할 수 있는 대안으로 주목받고 있다. 본 연구는 Cu/Polymer 하이브리드 본딩에 필요한 Polymer의 증착, 패터닝, 그리고 물성 변화를 중점적으로 탐구하며, 이를 통해 Cu/Polymer 하이브리드 본딩 구조가 기존 기술 대비 갖는 장점과 잠재적 응용 가능성을 제시한다. 특히, 낮은 유리전이온도(Tg)를 가진 Polymer의 사용이 가질 수 있는 저온 접합 공정에서의 이점과 높은 열팽창계수로 인한 기계적 특성의 향상에 대해 논의된다. 또한, Polymer의 표면 특성 변화와 플라즈마 처리를 통한 접합 메커니즘의 개선을 다루며, 본 연구는 Cu/Polymer 하이브리드 본딩 기술이 반도체 업계의 고성능, 저전력 소자 개발에 기여할 수 있는 중요한 돌파구가 될 것임을 강조한다.

• 대한소아치과학회지
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• 제30권2호
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• pp.263-271
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• 2003

본 연구는 All-In-One system의 적용 시간과 도포횟수에 따라 유치 상아질과 복합레진의 접착 강도와 혼성층에 어떤 영향을 미치는지를 규명하고자 Single bonding agent(Scotchbond Multi-Purpose Plus, 3M, USA)와 All-In-One system(Prompt-L pop, 3M ESPE, USA)를 사용하였고 수복용 레진으로 복합레진(Z-250, 3M, USA)를 사용한 결과 다음과 같은 결과를 얻을 수 있었다. 1. 전단 결합 강도는 Single bonding agent를 적용한 경우 All-In-One system을 적용한 군보다 유의하게 높게 나타났다(P<0.05). 2. Prompt L-pop을 2회, 3회 적용한 경우에 전단 결합 강도는 1회 적용한 군보다 유의하게 높게 나타났으며(P<0.05), 혼성층의 두께는 1회 적용군보다 2회, 3회 적용한 군에서 증가하였다. 3. Prompt L-pop을 15초 적용한 경우에 전단 결합 강도는 7초 적용한 군보다 유의하게 높게 나타났으며(P<0.05), 30초 적용군과는 차이가 없었다. 혼성층의 두께는 7초 적용군이 가장 얇고, 15초군과 30초군에서는 차이가 없었다. 4. Single bonding agent를 이용한 경우 두터운 $2-4{\mu}m$의 혼성층이 관찰된 반면, All-In-One bonding system(Prompt L-pop, 3M ESPE, USA)에서는 비교적 얇은 혼성층($1-2{\mu}m$)이 형성되었다.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2005년도 추계학술발표대회 논문집
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• pp.57-60
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• 2005

Composite-to-aluminum joins were tested to get failure loads and modes for three types of joins; adhesive bonding, bolt fastening, and adhesive-bolt hybrid joining. Film type adhesive FM73 and paste type adhesive Cytec EA9394S were used for aluminum and composite bonding to make a double-lap joint. A digital microscope camcorder was used to monitor the failure initiation and propagation. It was found that the hybrid joining is an effective method to strengthen the joint when the mechanical fastening is stronger than the bonding as in the case of using the paste type adhesive. On the contrary, when the strength of the bolted joint is lower than the strength of the bonded joint as in the joint with the film type adhesive, the bolt joining contribute little to the hybrid joint strength.

• 마이크로전자및패키징학회지
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• 제31권3호
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• pp.87-90
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• 2024

현재 3D 집적을 위한 하이브리드 본딩 공정에서 산화물을 절연체로 사용하는 경우 박리가 일어나거나 RC 지연이 증가하는 문제가 발생한다. 본 연구에서는 유전율을 제어할 수 있는 고분자 절연체를 이용한 하이브리드 본딩을 연구하였다. 고분자 계면의 de-wetting 방식의 가능성을 확인하기 위해 기존의 마이크로 범프(micro bump)에 고분자를 코팅 후 열 압착 본딩을 진행하여 금속 사이의 고분자가 빠져나가도록 하였다. 본 연구에서 수행된 하이브리드 본딩의 절연체로 고분자를 도입할 경우, 고분자의 저유전율 특성과 미세 피치 금속 본딩으로 RC 지연을 줄여 신호 전달 속도가 향상될 것으로 사료된다. 또한 차후 이 기술을 하이브리드 본딩에 적용하여 I/O 단자 수가 증가되어 상용화될 것을 기대한다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.663-664
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• 2010

• Journal of Welding and Joining
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• 제29권6호
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• pp.49-55
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• 2011

With the development of pre-painted steel sheets for automotive body application, a new joining method is required such as hybrid joining with combination of adhesive bonding and mechanical joining. The objective of this study is to investigate the effect of pre- and post-baking of adhesive bonding on failure mode and strength of hybrid joining of automotive steel sheets. Experiments show that the hybrid joining exhibits better bonding strength and displacement than conventional adhesive joining and mechanical fastening each. Comparison of pre- and post-baked hybrid joining results suggested that baking at $160^{\circ}C$ after mechanical joining was found to have higher joining properties than pre-baking condition. The prebaking condition changed its fracture mode from interfacial to button fracture. The changes in fracture mode with post-baking of hybrid joining was attributed to variation in neck thickness and undercut of joint.