• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.167-168
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• 2007

$CdIn_2S_4$ (110) films were grown on semi-insulating GaAs (100) by a hot wall epitaxy method. Using photocurrent (PC) measurement, the PC spectra in the temperature range of 30 and 10 K appeared as three peaks in the short wavelength region. It was found that three peaks, A-, B-, and C-excitons, correspond to the intrinsic transition from the valence band states of ${\Gamma}_4(z),\;{\Gamma}_5(x),\;and\;{\Gamma}_5(y)$ to the exciton below the conduction band state of ${\Gamma}_1(s)$, respectively. The 0.122 eV crystal field splitting and the 0.017 eV spin orbit splitting were obtained. Thus, the temperature dependence of the optical band gap obtained from the PC measurement was well described by $E_g$(T)=2.7116eV - $(7.65{\times}10^{-4}\;eV/K)T^2$/(425+T). But, the behavior of the PC was different from that generally observed in other semiconductors. The PC intensities decreased with decreasing temperature. This phenomenon had ever been reported at a PC experiment on the bulk crystals grown by the Bridgman method. From the relation of log $J_{ph}$ vs 1/T, where $J_{ph}$ is the PC density, two dominant levels were observed, one at high temperatures and the other at low temperatures. Consequently, the trapping centers due to native defects in the $CdIn_2S_4$ film were suggested to be the causes of the decrease in the PC signal with decreasing temperature.

• International Journal of Fluid Machinery and Systems
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• v.2 no.1
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• pp.55-60
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• 2009

The present study investigated temperature and thermal stress distributions in a film cooling system with normal injection cooling flow. 3D-numerical simulations using the FEM commercial code ANSYS were conducted to calculate distributions of temperature and thermal stresses. In the simulations, the surface boundary conditions used the surface heat transfer coefficients and adiabatic wall temperature which were converted from the Sherwood numbers and impermeable wall effectiveness obtained from previous mass transfer experiments. As a result, the temperature gradients, in contrast to the adiabatic wall temperature, were generated by conduction between the hot and cold regions in the film cooling system. The gradient magnitudes were about 10~20K in the y-axis (spanwise) direction and about 50~60K in the x-axis (streamwise) direction. The high thermal stresses resulting from this temperature distribution appeared in the side regions of holes. These locations were similar to those of thermal cracks in actual gas turbines. Thus, this thermal analysis can apply to a thermal design of film cooling holes to prevent or reduce thermal stresses.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.11
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• pp.991-998
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• 2013

A numerical study is carried out for natural convection in an enclosure with an inner hot cylinder at the center. The top wall is cold, the bottom and both side walls of the enclosure are adiabatic, and the cylinder is heated. The bottom wall is heated locally at the middle. The ratio (w) is defined by as the width of the bottom wall to that of the heated local area. The immersed boundary method (IBM) is used to model an inner circular cylinder based on the finite volume method (FVM). This study investigates the effect of w on natural convection in an enclosure with an inner heated cylinder for Rayleigh numbers of $10^6$. At $6Ra=10^6$, thermal and flow fields show time-dependent characteristics after their full development.

• Journal of the Korean Society of Propulsion Engineers
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• v.5 no.1
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• pp.34-41
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• 2001

A study has been conducted to observe the slot film cooling effect on a convergent nozzle wall. The slot film cooling is used to protect the nozzle wall from the hot combusted gas by the coolant injected from the slot around the inner wall of the nozzle. The film cooling effectiveness and the heat transfer to the nozzle wall are influenced significantly by the blowing ratio of the coolant to the main flow and those are also influenced by the shape of the slot and the flow acceleration in the nozzle. In the present study, the heat transfer for the various blowing ratios has been performed by the experimental method and the results are compared with the results computed by the empirical formula. The numerical method has been conducted to compare the film cooling effectiveness of the convergent nozzle with that of the cylinder. For the relatively low blowing ratio, the cooling effectiveness increases sharply as the blowing ratio increases, and the increasing rate slows down for the high blowing ratio.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.309-318
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• 2002

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured with Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CdIn_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7116\;eV-(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CdIn_2S_4$ have been estimated to be 0.1291 eV and 0.0248 eV, respectively, by means of the photocurrent spectra and the Hopfield quasi cubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}5$ states of the valence band of the $AgInS_2$/GaAs epilayer. The three photocurrent peaks observed at 10K areascribed to the $A_1$-, $B_1$-, and C1-exciton peaks for n = 1.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.229-236
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• 2014

A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.419-426
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• 2001

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at$ 630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is 2.1$\mu\textrm{m}$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of AgGaSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89\Times10^{17}$ cm$^{-3}$ , 129cm2/V.s at 293K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the AgGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting $$\Delta$S_{o}$ and the crystal field splitting $\Delta$C$_{r}$, were 0.1762eV and 0.2474eV at 10K, respectively. From the photoluminescence measurement of AgGaSe$_2$ single crystal thin film, we observed free excision (EX) observable only in high quality crystal and neutral bound exciton ($D^{o}$ , X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8mev and 14.1meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.ion energy of impurity was 141 meV.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.33 no.6
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• pp.435-442
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• 2009

Three-dimensional heat transfer characteristics for natural convection flows are numerically investigated in the doubly-inclined cubical-cavity according to the variation of a newly defined orientation angle �� of the hot wall surface from horizontal plane at moderate Rayleigh numbers. Numerical simulations of laminar flows are conducted in the range of Rayleigh numbers($10^4{\leq}Ra{\leq}10^5$) and $0^{\circ}{\leq}{\alpha}90^{circ}$ with a solution code(PowerCFD) employing unstructured cell-centered method. Comparisons of the average Nusselt number at the cold face are made with benchmark solutions and experimental results found in the literature. It is found that the average Nusselt number at the cold wall has a maximum value around the specified orientation ${\alpha}$ at each Rayleigh number. Special attention is also paid to three-dimensional thermal characteristics in natural convection according to new orientation angles at Ra��= $1{\times}10^5$, in order to investigate a new additional heat transfer characteristic found in the range of above Ra = $6{\times}10^4$.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.1897-1902
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• 2004

Numerical analysis of the heat transfer associated with droplet impact on a hot solid surface is performed by solving the mass, momentum and energy equations for the liquid-gas region. The deformed droplet shape is tracked by a level set method which is modified to achieve volume conservation during the whole calculation procedure and to include the effect of contact angle at the wall. The numerical method is validated through test calculations for the cases reported in the literature. Based on the numerical results, the effects of advancing/receding contact angle, impact velocity and droplet size on the heat transfer during droplet impact are quantified.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.11
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• pp.2995-3002
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• 1995

The cooling problem of the hot internal pipe flow has been investigated. Simultaneous conduction, convection, and radiation were considered with azimuthally varying convective heat loss at the pipe wall. A complex, nonlinear integro-differential radiative transfer equation was solved by the discrete ordinates method (or called S$_{N}$ method). The energy equation was solved by control volume based finite difference technique. A parametric study was performed by varying the conduction-to-radiation parameter, optical thickness, and scattering albedo. The results have shown that initially the radiatively active medium could be more efficiently cooled down compared with the cases otherwise. But even for the case with dominant radiation, as the medium temperature was lowered, the contribution of conduction became to exceed that of radiation.n.