• Title/Summary/Keyword: Horizontally patterned pixel

Search Result 1, Processing Time 0.012 seconds

Study on the Effect of the Operation Voltage according to the Reverse Twist for the fringe Field Switching (FFS) Mode (FFS 모드에서 Reverse Twist가 구동전압에 미치는 영향에 관한 연구)

  • Kim, Mi-Sook;Jung, Yeon-Hak;Seen, Seung-Min;Kim, Hyang-Yul;Kim, Seo-Yoon;Lim, Young-Jin;Lee, Seung-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.18 no.11
    • /
    • pp.1033-1037
    • /
    • 2005
  • We have studied on the effect of the operation voltage according to the reverse twist for the different fringe field switching (FFS) structure. The FFS structure with a vertically patterned edge of the pixel electrode (VPP) has lower operation voltage comparing to the one with a horizontally patterned edge of the pixel electrode (HPP). The reason is like that the number of the pattern of the pixel edge for the VPP structure is one third comparing with the HPP structure and thus, there is small reverse twist area for the VPP structure. Actually, the reverse twist disturbs the twist of LC near adjacent active area, result that LCs near there have the unstable dynamics. That is, the operation voltage increases as the reverse twist area increases. Therefore, it is very important to design pixel electrode with a small reverse twist region for the FFS mode.