• 제목/요약/키워드: Horizontal Reactor

검색결과 103건 처리시간 0.022초

다목적연구용 원자로의 30/5 톤 천정크레인에 대한 지진해석에 관한 연구 (Seismic Analysis of 30/5 Ton Overhead Crane for 30MWTh Korea Multipurpose Research Reactor (KMRR))

  • 유봉;서기석;주용선;홍성인
    • 한국전산구조공학회:학술대회논문집
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    • 한국전산구조공학회 1991년도 가을 학술발표회 논문집
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    • pp.111-114
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    • 1991
  • The KMRR 4-wheel crane which has a span of 30.6m long shall be designed to maintain its structural integrity during and after seismic shocks. Horizontal and vertical FRS for OBE and SSE conditions at the crane support are after seismic shock. Horizontal and vertical FRS for analysis are 4% for OBE and 7% for SSE. The crane consists of girder, saddle main and auxiliary trolley, and necessaries. They are modeled as beam elements and lumped masses for the following 4 cases ; trolley at center of the crane with and without the rated load, trolley at end with and without the rated load. The static analysis as well as the linear dynamic analysis including frequency and response spectrum analysis are performed for the seismic qualification of the crane using the Finite Element Method. For the simplicity of the analysis, the decoupling criteria are considered for the crane rope and the crane supporting beams. The main sections of the crane are stiffened until the calculated stresses satisfy the allowable limits. The seismic resultant loads are used to design the seismic restraints of the saddle and the trolley to protect the clue from the seismic uplifting loads the study results have show that the seismic design of the KMRR crane is governed by the OBE condition. not by the SSE condition. This paper briefly describes the analysis procedure used in the seismic design of the KMRR crane, and summarizes the analysis results.

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나노 계면분석을 위한 수평형 중성자 반사율 측정장치의 McStas 시뮬레이션 분석 (Analysis of Horizontal Neutron Reflectometer for Nanointerfaces Using McStas)

  • 권오선;신관우
    • 한국진공학회지
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    • 제16권1호
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    • pp.7-14
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    • 2007
  • 수평형 중성자 반사율 측정 장치는, 나노 박막의 두께와 구성성분, 표면의 거칠기 등 그 구조와 더불어 나노 박막의 동역학적인 거동을 연구하는데 긴요한 측정 장치이다. 특히, 수평형이기 때문에 액체시료의 자유표면을 유지하며 표면을 분석하는 것이 가능하다. 30 MW의 하나로의 열중성자원에 적합하도록 최적화하기 위하여, 몬테카를로 수치해석 방법을 적용한 McStas를 사용하여 장치의 각 부분에서의 중성자의 빔을 추적 계산하였고 그 결과의 해석과 그에 따른 설계변수결정을 기술하였다. 최적화 상태에서 단색파장이 ${\lambda}=2.5{\AA}$ 이고 $q<0.126{\AA}^{-1}$ 그리고 시료위치에서 $10^4n/cm^2/s$ 이상의 중성자빔의 세기를 얻었다. 본 장치가 설치 완료되면 국내에서 나노박막의 구조를 연구하는데 크게 기여할 것이다.

Silicon Nitride Layer Deposited at Low Temperature for Multicrystalline Solar Cell Application

  • Karunagaran, B.;Yoo, J.S.;Kim, D.Y.;Kim, Kyung-Hae;Dhungel, S.K.;Mangalaraj, D.;Yi, Jun-Sin
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.276-279
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    • 2004
  • Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.

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Water film covering characteristic on horizontal fuel rod under impinging cooling condition

  • Penghui Zhang;Bowei Wang;Ronghua Chen;G.H. Su;Wenxi Tian;Suizheng Qiu
    • Nuclear Engineering and Technology
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    • 제54권11호
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    • pp.4329-4337
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    • 2022
  • Jet impinging device is designed for decay heat removal on horizontal fuel rods in a low temperature heating reactor. An experimental system with a fuel rod simulator is established and experiments are performed to evaluate water film covering capacity, within 0.0287-0.0444 kg/ms mass flow rate, 0-164.1 kW/m2 heating flux and 13.8-91.4℃ feeding water temperature. An effective method to obtain the film coverage rate by infrared equipment is proposed. Water film flowing patterns are recoded and the film coverage rates at different circumference angles are measured. It is found the film coverage rate decreases with heating flux during single-phase convection, while increases after onset of nucleate boiling. Besides, film coverage rate is found affected by Marangoni effect and film accelerating effect, and surface wetting is significantly facilitated by bubble behavior. Based on the observed phenomenon and physical mechanism, dry-out depth and initial dry-out rate are proposed to evaluate film covering potential on a heating surface. A model to predict film coverage rate is proposed based on the data. The findings would have reliable guide and important implications for further evaluation and design of decay heat removal system of new reactors, and could be helpful for passive containment cooling research.

원전부지내 사용후핵연료 건식저장기술 분석 (Technology for AR Dry Storage of Spent Fuel)

  • 이흥영;윤석중;이익환;서기석
    • Journal of Radiation Protection and Research
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    • 제21권4호
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    • pp.313-327
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    • 1996
  • 원전부지내(AR) 사용후핵연료 건식저장방식으로 횡형콘크리트 모듈방식, 금속 저장용기 방식, 콘크리트 저장용기 방식, 수송저장 겸용용기 방식 및 다목적용기 방식 등이 있다. 이중다목적용기 방식을 제외한 다른 방식들은 각각 운영인허가를 받아 이미 세계 각 국에서 사용후핵연료 AR 건식저장에 사용되고 있으며 다목적용기 방식도 최근 개발을 활발히 진행하고 있는 상태이다. AR 건식저장 시설을 운영하고 있거나 추진중인 나라는 미국, 일본, 독일, 캐나다, 스페인, 체코, 스위스 등으로 AR 건식저장을 거쳐 중간저장이나 재처리시설로 수송하는 방식을 채택하고 있다. 우리나라의 경우 월성에서 콘크리트 Silo 건식저장을 이미 사용하고 있으며 일부 다른 원자로도 사용후핵연료 저장능력이 한계에 도달하고 있는 현실을 감안할 때 AR 임시 저장은 불가피한 것으로 여겨진다. 본 보고서에서는 고리를 비롯한 국내원전에 적용 가능한 외국의 AR 저장 시스템 각각에 대하여 설계특성, 설계요건, 기술기준 및 현황 등을 논의하였다. 대부분의 경우 저장용기 인허가 기간은 20년으로 제한하고 있으며 전 수명기간동안 재질의 건전성, 밀봉유지 등이 중요하게 요구되고 있다.

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승화법에 의한 단결정성장공정에서 이중온도구배가 대류현상에 미치는 영향 (Effects of stabilizing temperature gradients on thermal convection in rectangular enclosures during phsysical vapor trnasport)

  • 김극태;최장우;이민옥;권무현;권순길
    • 한국결정성장학회지
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    • 제9권1호
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    • pp.94-100
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    • 1999
  • 음향광 소재와 광전자 재료용으로 적합한 염화제일수은은 밀폐된 용기에서 승화법에 의한 결정성장으로 제 조된다. 온도경계조검으로 밀폐된 용기의 측면에 각각 다른 온도로 부하하였을 때에는 수직적과 수평적 대류현상이 동 시에 일어난다. 수직적 레이 무차원수에 대한 수평적 레이 무차원수의 비율이 1.5 보다 클 때, 대류유동구조는 $2.79{\times}10^4$, Pr = 0.91, Le = 1.01, Pe = 4.60, Ar = 0.2 and $C_v$ = 1.01에서 한 개의 셀에서 여러개의 셀로 변한다. ${Delta}T_H{\ge}0.3$에 대하여, ${Delta}T$의 증가함과 엑스펙트 비율의 감소함에 따라 $$\mid$U$\mid$_{max}$이 증가한다. 0.1에서 1까지의 엑스펙트 비율의 범위에서는 $$\mid$U$\mid$_{max}$$\sqrt{{\Delta}T^_H\;^{\ast}}$와 직접적이며 선형적인 관계에 있다. 엑스페트 비율이 감소함에 따라 대류의 흐름은 불안정 하게 되며, 그 결과 대류의 크기는 증가한다. 수직적 온도구배는 대류의 흐름을 불안정하게 하여 진동하게 하며, 그 반면 에 수명적 구배는 흐름을 안정화시킨다.

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Time Evolution of a High-temperature GaN Epilayer Grown on a Low-temperature GaN Buffer Layer using a Low-pressure MOCVD

  • Chang, Kyung-Hwa;Cho, Sung-Il;Kwon, Myoung-Seok
    • Transactions on Electrical and Electronic Materials
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    • 제7권1호
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    • pp.36-41
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    • 2006
  • In this paper, the time evolution of undoped GaN epilayers on a low-temperature GaN buffer layer grown on c-plane sapphire at a low pressure of 300 Torr was studied via a two-step growth condition in a horizontal MOCVD reactor. As a function of the growth time at a high-temperature, the surface morphology, structural quality, and optical and electrical properties were investigated using atomic force microscopy, high-resolution x-ray diffraction, photoluminescence, and Hall effect measurement, respectively. The root-mean-square roughness showed a drastic decrease after a certain period of surface roughening probably due to the initial island growth. The surface morphology also showed the island coalescence and the subsequent suppression of three-dimensional island nucleation. The structural quality of the GaN epilayer was improved with increasing growth time considering the symmetrical (002) and asymmetrical (102) rocking curves. The variations of room-temperature photoluminescence, background carrier concentration, and Hall mobility were measured and discussed.

Effects of inert gas (Ne) on thermal convection of mercurous chloride system of $Hg_2Cl_2$ and Ne during physical vapor transport

  • Choi, Jeong-Gil;Lee, Kyong-Hwan;Kim, Geug-Tae
    • 한국결정성장학회지
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    • 제18권6호
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    • pp.225-231
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    • 2008
  • For an aspect ratio (transport length-to-width) of 5, Pr=1.13, Le=1.91, Pe=4.3, Cv=1.01, $P_B=20\;Torr$, the effects of addition of inert gas Ne on thermally buoyancy-driven convection ($Gr=2.44{\times}10^3$) are numerically investigated for further understanding and insight into essence of transport phenomena in two dimensional horizontal enclosures. For $10K{\leq}{\Delta}T{\leq}50\;K$, the crystal growth rate increases from 10 K up to 20 K, and then is slowly decreased until ${\Delat}T=50\;K$, which is likely to be due to the effects of thermo-physical properties stronger than the temperature gradient corresponding to driving force for thermal convection. The dimensional maximum velocity gratitude reflecting the intensity of thermal convection is directly and linearly proportional to the temperature difference between the source and crystal regions. The rate is first order-exponentially decreased for $2{\leq}Ar{\leq}5$. This is related to the finding that the effects of side walls tend to stabilize convection in the growth reactor. In addition, the rate is first order exponentially decayed for $10{\leq}P_B{\leq}200\;Torr$.

수평형 MOCVD에 의한 GaN 에피층 성장시 반응로내의 열 및 물질전달에 관한 수치해석 연구 (Numerical Analysis on the Beat and Mass Transport in Horizontal MOCVD Reactor for the Growth of GaN Epitaxy)

  • 신창용;윤정모;이철로;백병준
    • 한국진공학회지
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    • 제10권3호
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    • pp.341-349
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    • 2001
  • 수평형 MOCVD (유기금속 화학기상법) 제조공정에서 유체유동, 열전달 및 화학종의 국소적 질량분율을 고찰하기 위한 수치계산을 수행하였다. 수송가스로 작용하는 수소가스와 TMG및 암모니아의 농도분포를 예측함으로서 혼합과정을 분석하고 필름성장의 균일성을 예측하였다. 농도분포에 미치는 입구크기, 위치, 질량유량 및 벽면의 경사각도의 영향이 검토되었다. 계산결과로서 무차원 대류 열전달 계수 Nu에 의해 반응물의 농도분포를 정성적으로 예측할 수 있었으며, 균일한 필름성장을 위한 최적 질량유량, 벽면 경사도 및 입구조건이 제시되었다.

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기-액(氣-液) 2상유동(二相流動)시 항력(抗力)에 관(關)한 연구(硏究) (The Study on the Drag Reduction for Gas/Liquid Two Phase Flow)

  • 차경옥;오율권;김재근
    • 한국분무공학회지
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    • 제1권3호
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    • pp.20-28
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    • 1996
  • It is well known that drag reduction in single phase liquid flow is affected by polymer material, molecular weight, polymer concentration, pipe diameter, and flow velocity. Drag reduction in two phase flow can be applied to the transport of crude oil, phase change system such as chemical reactor, pool and boiling flow, and to present cavitation which occurs in pump impellers. But the research of drag reduction in two phase flow is not sufficient. The purpose of the present work is to evaluate the drag reduction by measuring pressure drop, void fraction whether polymer is added in the horizontal two phase system or not. Experiment has been conducted in a test section with 24 m of the inner diameter and 1,500 mm of the length. The used polymer materials are two kinds of polyacrylamide[PAAM] and co-polymer[A611P]. The polymer concentration was varied with 50, 100 and 200 ppm under the same experimental conditions. Experimental results were shown that the drag is higher reduced by co-polymer rather than polyanylamide.

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