• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권8호
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• pp.387-391
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• 2006

The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권10호
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• pp.461-466
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• 2006

In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolutioniphotodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film and $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, $E_g\;_{opt}$ of the film, i. e., an exposure of sub-bandgap light $(h{\upsilon} under P-polarization. As the results, we found that the diffraction efficiency on $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double layer structure thin film was more higher than that on single $As_{40}Ge_{10}Se_{15}S_{35}$ thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on $As_{40}Ge_{10}Se_{15}S_{35}\;(1{\mu}m)/Ag$ (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.

• 한국광학회:학술대회논문집
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• 한국광학회 1996년도 Advance Program of 13th optics andquantum Electronics conference, 1996제13 회 광학 및 양자전자 학술 발표회 논문 요약집
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• pp.73-73
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• 1996

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.490-493
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• 2003

We have carried out two-beam interference experiment to form holographic grating on amorphous $As_{40}Ge_{10}Se_{15}S_{35}/Ag$ double-layer. In this study holographic grating formed using He-Ne laser(632.8nm) under non-polarization state and p-polarization state and we confirm that the diffraction efficiency depend on thickness of Ag. The diffraction efficiency was obtained by first order intensity. We got the maximum diffraction efficiency that thickness of Ag was $600{\AA}$. The maximum diffraction efficiency was 13.5% in (P:P) polarization state.

• Journal of the Optical Society of Korea
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• 제7권4호
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• pp.269-274
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• 2003

In this paper, a Gaussian apodization technique applied to a transmission volume hologram for holographic demultiplexer is proposed. The Gaussian apodized grating of 15 mm ${\times}$ 11mm size, $38{\mu}m$ thickness and 3.2 mm horizontal standard deviation of the Gaussian index modulation profile was fabricated. A 22-channel demultiplexer based on that grating has been optically demonstrated. The channel spacing, the interchannel cross-talk level and the channel uniformity of 0.8 nm, -30 dB and 1.5 dB, respectively, were obtained.

• Journal of Information Display
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• 제2권3호
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• pp.6-12
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• 2001

Formation of intensity gratings was studied with two s-polarized (s+s) configuration in polymer liquid crystals (PLCs) containing a photochromic moiety (azobenzene) and a mesogenic unit (tolane, T-AB; cyanobiphenyl, CB-AB) by photoinduced alignment of PLCs. Remarkable differences were observed between the two PLCs. T-AB showed a faster response to the change in the diffraction intensity than CB-AB. In T-AB, alignment change took place faster than that of CB-AB. By introducing the tolane unit at the side chain, we obtained a diffraction efficiency of 30 % in the Raman-Nath regime

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.218-218
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• 2006

A number of new ideas have been implemented to control the droplet morphology and electrooptic properties of holographic polymer dispersed liquid crystal (HPDLC). Doping of conductive fullerene particles to the conventional HPDLC induced dual effects of reducing both droplet coalescence and operating voltage. Chain transfer agent gave higher gel content with lower crosslink density, less dark reactions and less grating shrinkage with much smooth LC-polymer interfaces. Addition of octanoic acid (OA) to the formulation of HPDLC gave a decrease in droplet size and monotonic increase of the off state diffraction throughout the OA content.

• 대한전자공학회논문지
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• 제24권5호
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• pp.868-873
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• 1987

Holographic diffraction gratings which are the core element of the optical instruments such as a spectrophotometer have been fabricated using the photoresist as a recording material. A 488nm line from an argon laser is used in making the gratings. Transmission type surface-relief phase grating and reflection type which is fabsricated by coating the aluminum on the transmission type with thickness 2000\ulcornerare fabricated, the spatical frequency of which are 1200 lines/mm. Diffraction efficiency, scattered light and wave-front aberratin are measured to test the performance of the developed gratings. A marimum diffraction efficiency is given when light is incident at the Bragg angle. Theoretical efficiency is about 80%, but measured efficiency of the transmission type and reflection type is 50% and 45%, respectively.

• 한국통신학회논문지
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• 제17권12호
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• pp.1353-1361
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• 1992

가볍고 박막이며 자유공간 상호연결이 가능한 홀로그래피 광학소자 (HOE)를 제작하였다. 특히 광연결 및 다중영상처리를 위해서는 고효율이어야 하며 같은 파워의 스폿빔이 형성되어야 한다. 2차원 2진 위상구조를 갖는 위상격자를 찾기위해 modified Newton방식을 기초로 컴퓨터 시뮬레이션하여 비선형 방정식의 해를 구하였다. 플로터를 이용하여 원화를 그린다음 축소하여 마이크로 필름에 정보를 옮겼다. 마이크로 필름과 은염 홀로그램 필름을 접촉복사시켜 위상형 회절격자를 만들어 $5{\times}5$ 다중 스폿빔을 형성시켰다. 중앙 0차 빔을 제외하고는 균일한 세기를 가졌으며 표백처리된 홀로그래피 광학소자는 고효율을 얻을 수 있었다.

• 한국통신학회논문지
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• 제16권10호
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• pp.934-940
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• 1991

본 논문에서는 새로운 양자화 방법을 도입하여 학습을 수행하는 단층 신경망을 광학적으로 구현하였다 본 논문의 시스템은 입력 마스크 위상형 홀로그램 회절격자. LCD, CCD 카메라 등으로 구성된다. 입력단의 뉴런과 출력단의 뉴런간의 연결은 홀로그램 회절격자를 이용하여 2차원 연결을 이루었으며, 회절광들의 세기를 같게 하기 위하여 진폭형 회절격자를 위상형 회절격자로 변환시켰다. 뉴런간의 가중치는 2진 양자화되어 LCD를 이용하여 나타내었고, 출력값은 CCD를 통하여 컴퓨터에 입력되어 가중치를 보정하며, 이 과정은 학습이 완료될 때가지 반복 수행된다. 실험은 학습도 (learning rate) 0.5, 0.9에 대하여 실행하였으며, 제안된 방식으로 학습을 무리없이 수행할 수 있음을 확인할 수 있었다.