• 한국전기전자재료학회논문지
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• 제34권5호
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• pp.348-356
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• 2021

Field-effect transistors (FETs) are the key elements of conventional electronics; hence, have drawn a lot of research and commercial interests. In recent years, metal halide perovskite materials have achieved a remarkable efficiency of 29.15% in the field of photovoltaics, and have drawn the scientific community's attention to promote their use in the field of optoelectronics, such as FETs and phototransistors. The MAPbI₃ (methylammonium lead iodide) perovskite TFT has achieved a record hole mobility of 21.41 cm²/V-s in the year 2020. In this review, we will briefly discuss the physical structure of MAPbI₃ perovskite and the essential factors that stimulate these devices, together with the role of defects, the ion migration concept, and the implication of both dielectric and electrode materials on the device's performance.

• 한국전기전자재료학회논문지
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• 제36권1호
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• pp.49-55
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• 2023

The deposition of indium zinc oxide (IZO) thin films was carried out on substrate at room temperature by RF magnetron sputtering. The effects of substrate temperature, RF power and deposition pressure were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, structure, and transmittance. As the RF power increases, the resistivity gradually decreases, and the transmittance slightly decreases. For the variation of deposition pressure, the resistivity greatly increases, and the transmittance is decreased with increasing deposition pressure. As a result, it was demonstrated that an IZO film with the resistivity of 3.89 × 10^-4 Ω∙cm, the hole mobility of 51.28 cm²/Vs, and the light transmittance of 86.89% in the visible spectrum at room temperature can be prepared without post-deposition annealing.

• Bulletin of the Korean Chemical Society
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• 제32권spc8호
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• pp.2899-2905
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• 2011

We have demonstrated that TPyPA can be used as an efficient multi-functional material for OLEDs; hole transporting material (HTL), blue and white-light emitter. The device based on TPyPA as the HTL exhibited an external quantum efficiency of 1.7% and a luminance efficiency of 4.2 cd/A; these values are 40% higher than the external quantum efficiency and luminance efficiency of the NPD-based reference device. The device based on TPyPA as a blue-light emitter exhibited an external quantum efficiency of 4.2% and a luminance efficiency of 5.3 $cdA^{-1}$ with CIE coordinates at (0.16, 0.14), the device based on TPyPA as a white-light emitter exhibited an external quantum efficiency of 3.2% and a luminance efficiency of 7.7 $cdA^{-1}$ with CIE coordinates at (0.33, 0.39). Also, TPyPA-based organic solar cell (OSC) exhibited a maximum power conversion efficiency of 0.35%. TPyPA-based organic thin-film transistors (OTFTs) exhibited highly efficient field-effect mobility (${\mu}_{FET}$) of $1.7{\times}10^{-4}cm^2V^{-1}s^{-1}$, a threshold voltage ($V_{th}$) of -15.9 V, and an on/off current ratio of $8.6{\times}10^3$.

• 정보처리학회논문지C
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• 제16C권4호
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• pp.535-542
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• 2009

무선센서네트워크는, 다수의 센서노드가 넓은 지역에 배치되어 자신의 전원에 의해 동작하고 다른 센서노드와 협력하여 환경검침 또는 물리량 검침을 수행하는 무선네트워크로 정의한다. 각각의 센서노드들은 자신의 배터리전원소모를 최소화하여, 장기간 사용할 수 있어야 하며, 센서 노드를 적절하게 배치하여 전체 네트워크 커버리지를 제공할 수 있어야 무선센서네트워크의 수명을 늘일 수 있다. 초기 센서노드의 배치로는 센서들의 배터리 수명 등의 이유로 제약이 있으며, 모바일센서노드는 센서가 이동하여 새로운 커버리지를 제공함으로써, 이러한 제약조건을 완화할 수 있다. 본 논문에서는 perimeter coverage property를 만족하는 모바일 센서들의 단계적인 이동을 통한 커버리지 제공기법을 제안한다. 각각의 모바일 센서노드들은 이웃한 센서노드들이 dead 노드인지 판단하게 되며, dead 노드인 경우, 센서네트워크의 커버리지 hole을 만드는지 여부를 판단한 후, 각각의 모바일 센서노드들은 hole의 중심점을 계산하고, 관련된 센서노드들이 협동하여, 단계적으로이동하여, 최종 hole을 커버하는 새로운 센서네트워크를 형성하게 된다. 본 제안기법을 시뮬레이션하여 DCM 기법과 비교한 결과, 에너지 효율을 결정하는 전체 움직임거리 측면에서 최소 50% 이상의 성능향상을 보임을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1341-1342
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• 2006

Electrical characteristics of field-effect thin film transistors (TFTs) with p-channels of CdTe/CdHgTe core-shell nanocrystals are investigated in this paper. For the fabrication of bottom- and top-gate TFTs, CdTe/CrHgTe nanocrystals synthesized by colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanoparticles are sintered at $150^{\circ}C$ to form the channels for the TFTs, and $Al_{2}O_{3}$ layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate $SiO_2$ layer exhibits a mobility of $0.21cm^2$/ Vs and an Ion/Ioff ratio of $1.5{\times}10^2$ and a representative top-gate field-effect TFT with a top-gate $Al_{2}O_{3}$ layer provides a field-effect mobility of $0.026cm^2$/ Vs and an Ion/Ioff ratio of $2.5{\times}10^2$. $Al_{2}O_{3}$ was deposited for passivation of CdTe/CdHgTe core-shell nanocrystal layer, resulting in enhanced hole mobility, Ior/Ioff ratio by 0.25, $3{\times}10^3$, respectively. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top gate geometries are compared in this paper.

• Journal of Periodontal and Implant Science
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• 제29권2호
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• pp.415-433
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• 1999

Implant stability is the key to long-term successful outcome for osseointegrated implants. To evaluate the initial healing response of bone around HA-coated implants without primary bone contact. 21 HA-coated thread type implants(STERI-OSS?) were placed in the femurs of 5 mongrel dogs, about 1-year old. Implants, 8 mm in length and 3.8mm(experimental 1group), 5.0mm(experimental 2group) and 6.0mm(control group) in diameter, were inserted after 3 holes of 6.0mm in diameter and 10mm in depth were prepared in the surgical sites each dog. Implants were supported by only nonresorbable membrane($Teflon^{(R)}$), in order to prevent the ingrowth of upper soft tissue into the gap between bone and implant, and to maintain each implant to be positioned in the center of the drilled hole. 9 implants with different diameters were inserted in 3 dogs for histologic observation, and 12 implants were inserted in 2 dogs for mobility test and removal torque test. Fluorescent dyes were injected for the observation of new bone formation in order of $Terramycin^{(R)}$, Arizarin $Red^{(R)}$, and $Calcein^{(R)}$ at an interval of 2 weeks. 3 dogs were sacrificed for histologic observation at 4, 8, and 12-week after placement. Light microscopy and confocal laser scanning microscopy were used to qualitatively characterize the bone around HA-coated implant. 2 dogs were sacrificed for mobility test($Periotest^{(R)}$, Simens AG, Bensheim, Germany) and removal torque test($Autograph^{(R)}$ AGS-1000D series, Japan) at 8 and 12-week after placement The results were as follows: 1. Histologic observation showed that osseointegration occurred to both control and experimental groups as time lapse, but delayed bone healing was revealed in 3.8mm group (experimental 1group), compared to contrtol group and 5.0mm group (experimental 2group). 2. The mobility test showed that the experimental groups had no distinguishable movement during experimental periods of 8 and 12-week, and there was no difference in mobility depending on the gap between bone and implant, and time lapse. 3. The removal torque forces were increased depended on the gaps decreasing between bone and implant, and time lapse. The results suggest that HA-coated implant without primary bone contact, based on guided bone regeneration could obtain its stability in all experimental groups as time lapse, but bone healing was delayed in experimental group of 3.8mm. And the results suggested that studies on correlationship between mobility test and removal torque test for implant stability would be necessary.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.150-154
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• 2000

Mobilities of electrons ($\mu_p$) and holes ($\mu_p$) in 2, 5, and 10 mol% $TiO_2$-doped yttria stabilized zirconia (TD-YSZ) have been estimated by a non-steady state gas permeation method using models proposed by Weppner and Maruyama. Values of $\mu_n$ and $\mu_p$ were found to be closed to those in non-doped YSZ reported earlier. The concentration of electrons and holes were calculated from $\mu_n$ and $\mu_p$ values and the partial conductivities of electrons and holes measured by a dc-polarization method. The concentration of electrons at unit oxygen partial pressure increased with increasing $TiO_2$concentration, while the hole concentration was almost independent of $TiO_2$concentration.

• ETRI Journal
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• 제25권3호
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• pp.203-209
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• 2003

This paper reports on our investigation of DC and RF characteristics of p-channel metal oxide semiconductor field effect transistors (pMOSFETs) with a compressively strained $Si_{0.8}Ge_{0.2}$ channel. Because of enhanced hole mobility in the $Si_{0.8}Ge_{0.2}$ buried layer, the $Si_{0.8}Ge_{0.2}$ pMOSFET showed improved DC and RF characteristics. We demonstrate that the 1/f noise in the $Si_{0.8}Ge_{0.2}$ pMOSFET was much lower than that in the all-Si counterpart, regardless of gate-oxide degradation by electrical stress. These results suggest that the $Si_{0.8}Ge_{0.2}$ pMOSFET is suitable for RF applications that require high speed and low 1/f noise.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.368-368
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• 2012

We report solution-processed, high-performance single-crystal organic nanowire transistors fabricated from a novel indolocarbazole (IC) derivative. The direct printing process was utilized to generate single-crystal organic nanowire arrays enabling the simultaneous synthesis, alignment and patterning of nanowires using molecular ink solutions. Using this method, single-crystal organic nanowires can easily be synthesized by self-assembly and crystallization of organic molecules within the nanoscale channels of molds, and these nanowires can then be directly transferred to specific positions on substrates to generate nanowire arrays by a direct printing process. These new molecules are particularly suitable for p-channel organic field-effect transistors (OFETs) because of the high level of crystallinity usually found in IC derivatives. Selected area diffraction (SAED) and X-ray diffraction (XRD) experiments on these solution-processed nanowires showed high crystallinity. Transistors fabricated with these nanowires gave a hole mobility as high as 1.0 cm2V-1s-1 with nanowire arrays with the direct printing process.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.287.2-287.2
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• 2016

Silicon has considerably good characteristics on electron, hole mobility and its price. With 2-D sinlge-layer Graphene/n-Si heterojunction solar cell shows that in one sun condition exhibit power conversion efficiency(PCE) of 10.1%. This photovoltaic effect was achieved by applying gate voltage to the Schottky junction of the heterostructure solar cell. Energy band diagram shows that Schottky barrier between Si and graphene can be adjust by the external electric field. because of the fermi level of the graphene can be changed by external gate voltage, we can control the Schottkky barrier of the heterostructure solar cell. The ratio between generated power of solar cell and consumption electrical power is remarkable. Since we use the graphene as the top gate electrode, most of the sun light can penetrate into the active area.