• Title/Summary/Keyword: Hole Defect

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TSV Formation using Pico-second Laser and CDE (피코초 레이저 및 CDE를 이용한 TSV가공기술)

  • Shin, Dong-Sig;Suh, Jeong;Cho, Yong-Kwon;Lee, Nae-Eung
    • Laser Solutions
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    • v.14 no.4
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    • pp.14-20
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    • 2011
  • The advantage of using lasers for through silicon via (TSV) drilling is that they allow higher flexibility during manufacturing because vacuums, lithography, and masks are not required; furthermore, the lasers can be applied to metal and dielectric layers other than silicon. However, conventional nanosecond lasers have disadvantages including that they can cause heat affection around the target area. In contrast, the use of a picosecond laser enables the precise generation of TSVs with a smaller heat affected zone. In this study, a comparison of the thermal and crystallographic defect around laser-drilled holes when using a picosecond laser beam with varing a fluence and repetition rate was conducted. Notably, the higher fluence and repetition rate picosecond laser process increased the experimentally recast layer, surface debris, and dislocation around the hole better than the high fluence and repetition rate. These findings suggest that even the picosecond laser has a heat accumulation effect under high fluence and short pulse interval conditions. To eliminate these defects under the high speed process, the CDE (chemical downstream etching) process was employed and it can prove the possibility to applicate to the TSV industry.

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Civil Law Study on the Arbitrary Uninsured Medical Benefits (임의비급여 진료행위에 관한 민사법적 검토)

  • Bae, Byungil
    • The Korean Society of Law and Medicine
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    • v.18 no.2
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    • pp.75-103
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    • 2017
  • There are three types of benefits in the National Health Insurance Act of Korea. Those are the treatment benefit, statutory uninsured medical benefits and arbitrary uninsured medical benefits. Recently the Korea Supreme Court changed its past legal theory and permitted the arbitrary uninsured medical benefits under the strictly exceptional conditions. According to the Supreme Court's decision, the existence of procedural difficulty, the medical necessity and the patient's consent are necessarily required in order to allow the legal exceptions in arbitrary uninsured medical benefits. Among the three requirements, the doctor's explanation and the patient's fully informed consent are the most important essentials in this legal conflict. The requirement concerning the doctor's explanation and the patient's consent roles like a hole in the ice as a breathing hole in the arbitrary uninsured medical benefits. The most cases dismissed after Supreme Court Decision 2010DU27639, 27646 Decided June 18, 2012. were due to the defect of three requirements.

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Transport parameters in a-Se:As films for digital X-ray conversion material using the moving-photocarrier-grating technique (moving-photocarrier-grating 기술을 이용한 디지털 X-선 변환물질 a-Se:As의 수송변수)

  • Park, Chang-Hee;Nam, Sang-Hee;Kim, Jae-Hyung
    • Journal of radiological science and technology
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    • v.28 no.4
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    • pp.267-272
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    • 2005
  • The effects of As addition in amorphous selenium (a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating (MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, jsc in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

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Tunable doping sites and the impacts in photocatalysis of W-N codoped anatase TiO2

  • Choe, Hui-Chae;Sin, Dong-Bin;Yeo, Byeong-Cheol;Song, Tae-Seop;Han, Sang-Su;Park, No-Jeong;Kim, Seung-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.246-246
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    • 2016
  • Tungsten-nitrogen (W-N) co-doping has been known to enhance the photocatalytic activity of anatase titania nanoparticles by utilizing visible light. The doping effects are, however, largely dependent on calcination or annealing conditions, and thus, the massive production of quality-controlled photocatalysts still remains a challenge. Using density functional theory (DFT) thermodynamics and time-dependent DFT (TDDFT) computations, we investigate the atomic structures of N doping and W-N co-doping in anatase titania, as well as the effect of the thermal processing conditions. We find that W and N dopants predominantly constitute two complex structures: an N interstitial site near a Ti vacancy in the triple charge state and the simultaneous substitutions of Ti by W and the nearest O by N. The latter case induces highly localized shallow in-gap levels near the conduction band minimum (CBM) and the valence band maximum (VBM), whereas the defect complex yielded deep levels (1.9 eV above the VBM). Electronic structures suggest that substitutions of Ti by W and the nearest O by N improves the photocatalytic activity of anatase by band gap narrowing, while defective structure degrades the activity by an in-gap state-assisted electron-hole recombination, which explains the experimentally observed deep level-related photon absorption. Through the real-time propagation of TDDFT (rtp-TDDFT), we demonstrate that the presence of defective structure attracts excited electrons from the conduction band to a localized in-gap state within a much shorter time than the flat band lifetime of titania. Based on these results, we suggest that calcination under N-rich and O-poor conditions is desirable to eliminate the deep-level states to improve photocatalysis.

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An Exploratory Study on the Optimized Test Conditions of the Lock-in Thermography Technique (위상잠금 열화상 기법의 최적 실험 조건 탐색 연구)

  • Cho, Yong-Jin
    • Journal of the Korean Society for Nondestructive Testing
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    • v.31 no.2
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    • pp.157-164
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    • 2011
  • This work is devoted to the technique application of lock-in infrared Thermography in the shipbuilding and ocean engineering industry. For this purpose, an exploratory study to find the optimized test conditions is carried out by the design of experiments. It has been confirmed to be useful method that the phase contrast images were quantified by a reference image and weighted by defect hole size. Illuminated optical intensity of lower or medium strength give a good result for getting a phase contrast image. In order to get a good phase contrast image, lock-in frequency factors should be high in proportion to the illuminated optical intensity. The integration time of infrared camera should have been inversely proportional to the optical intensity. The other hand, the difference of specimen materials gave a slightly biased results not being discriminative reasoning.

RHT-Based Ellipse Detection for Estimating the Position of Parts on an Automobile Cowl Cross Bar Assembly (RHT 기법을 이용한 카울크로스바의 조립위치 결정에 관한 연구)

  • Shin, Ik-Sang;Kang, Dong-Hyeon;Hong, Young-Gi;Min, Young-Bong
    • Journal of Biosystems Engineering
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    • v.36 no.5
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    • pp.377-383
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    • 2011
  • This study proposed the new method of discerning the assembled parts and presuming the position of central point in a Cowl Cross Bar (CCB) using a Charge-Couple Device (CCD) camera attached to a robot in the auto assembly line. Three control points of an ellipse were decided by three reference points, which were equally distanced. The radii of these reference points were determined by the size of the object, and the repeated presumption secured the precise determination. The comparison of the central point of ellipse presumed by Randomized Hough Transform (RHT) with the part information stored in a database was used for determining the faulty part in an assembly. The method proposed in this study was applied for the real-time inspection of elliptical parts, such as bolt, nut hole and so on, connected to a CCB using a CCD camera. The findings of this study showed that the precise decision on whether the parts are inferior or not can be made irrespective of the lighting condition of industrial site and the noises of the surface of the part. In addition, the defect decision on the individual elliptic parts assembled in a CCB showed more than 98% accuracy within a 500-millisecond period at most.

Influence of Wet Chemistry Damage on the Electrical and Structural Properties in the Wet Chemistry-Assisted Nanopatterned Ohmic Electrode (Wet chemistry damage가 Nanopatterned p-ohmic electrode의 전기적/구조적 특성에 미치는 영향)

  • Lee, Young-Min;Nam, Hyo-Duk;Jang, Ja-Soon;Kim, Sang-Mook;Baek, Jong-Hyub
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.150-150
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    • 2008
  • 본 연구에서는 Wet chemistry damage가 Nanopatterned p-ohmic electrode에 미치는 영향을 연구하였다. Nanopattern은 Metal clustering을 이용하여, P-GaN와 Ohmic형성에 유리한 Pd을 50$\AA$ 적층한 후 Rapid Thermal Annealing방법으로 $850^{\circ}C$, $N_2$분위기에서 3min열처리를 하여 Pd Clustering mask 를 제작하였다. Wet etching은 $85^{\circ}C$, $H_3PO_4$조건에서 시간에 따라 Sample을 Dipping하는 방법으로 시행하였다 Ohmic test를 위해서 Circular - Transmission line Model 방법을 이용하였으며, Atomic Force Microscopy과 Parameter Analyzer로 Nanopatterned GaN surface위에 형성된 Ni/ Au Contact에서의 전기적 분석과, 표면구조분석을 시행하였다. AFM결과 Wet처리시간에 따라서 Etching형상 및 Etch rate이 영향을 받는 것이 확인되었고, Ohmic test에서 Wet chemistry처리에 의한 Tunneling parameter와 Schottky Barrier Height가 크게 증/감함을 관찰하였다. 이러한 결과들은 Wet처리에 의해서 발생된 Defect가 GaN의 표면과 하부에서 발생되며, Deep acceptor trap 및 transfer거동과 밀접한 관련이 있음을 확인 할 수 있었다. 보다 자세한 Transport 및 Wet chemical처리영향에 관한 형성 Mechanism은 후에 I-V-T, I-V, C-V, AFM결과 들을 활용하여 발표할 예정이다.

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Deuterium Ion Implantation for The Suppression of Defect Generation in Gate Oxide of MOSFET (MOSFET 게이트 산화막내 결함 생성 억제를 위한 효과적인 중수소 이온 주입)

  • Lee, Jae-Sung;Do, Seung-Woo;Lee, Yong-Hyun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.7
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    • pp.23-31
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    • 2008
  • Experiment results are presented for gate oxide degradation under the constant voltage stress conditions using MOSFETs with 3-nm-thick gate oxides that are treated by deuterium gas. Two kinds of methods, annealing and implantation, are suggested for the effective deuterium incorporation. Annealing process was rather difficult to control the concentration of deuterium. Because the excess deuterium in gate oxide could be a precursor for the wear-out of gate oxide film, we found annealing process did not show improved characteristics in device reliability, compared to conventional process. However, deuterium implantation at the back-end process was effective method for the deuterated gate oxide. Device parameter variations as well as the gate leakage current depend on the deuterium concentration and are improved by low-energy deuterium implantation, compared to those of conventional process. Especially, we found that PMOSFET experienced the high voltage stress shows a giant isotope effect. This is likely because the reaction between "hot" hole and deuterium is involved in the generation of oxide trap.

Hardening Characteristics of Aluminum Alloy Surface by PTA Overlaying with Metal Powders (I) (플라즈마분체 오버레이법에 의한 알루미늄합금 표면의 경화특성에 관한 연구(I) -후막 표면 합금화층의 형성조건과 그 조직-)

  • ;中田一博;;;松田福久
    • Journal of Welding and Joining
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    • v.12 no.4
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    • pp.85-101
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    • 1994
  • Effect of Cr, Cu and Ni metal powders addition on the alloyed layer of aluminum alloy (AC2B) has been investigated with the plasma transferred arc (PTA) overlaying process. The overlaying conditions were 125-200A in plasma arc current, 150mm/min in process speed and 5-20g/min in powder feeding rate. Main results obtained are summarized as follows: 1) It was made clear that formation of thick surface alloyed layer on aluminum alloy is possible by PTA overlaying process. 2) The range of optimum alloying conditions were much wider in case of Cu and Ni powder additions than the case of Cr powder addition judging from the surface appearance and the bead macrostructure. 3) Alloyed layer with Cu showed almost the homogeneous microstructure through the whole layer by eutectic reaction. alloyed layers with Cr and Ni showed needle-like and agglomerated microstructures, the structure of which has compound layer in upper zone of bead by peritectic and eutectic-peritectic reactions, respectively. 4) Microconstituents of the alloyed layer were analyzed as A1+CrA $l_{7}$ eutectics, C $r_{2}$al sub 11/, CrA $l_{4}$, C $r_{4}$A $l_{9}$ and C $r_{5}$A $l_{*}$ 8/ for Cr addition, Al+CuA $l_{2}$(.theta.) eutectics and .theta. for Cu addition, and Al+NiA $l_{3}$ eutectics. NiA $l_{3}$, N $i_{2}$A $l_{3}$ and NiAl for Ni addition. 5) Concerning defect of the alloyed layer, many blow holes were seen in Cr and Ni additions although there was lesser in Cu addition. Residual gas contents in blow hole for Cu and Ni alloyed layer were confirmed as mainly $H_{2}$ and a littie of $N_{2}$ Cracking was observed in compound zone of the alloyed layer in case of Cr and Ni addition but not in Cu alloyed layer.r.r.

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Studies of Valve Lifer for Automotive Heavy Duty Diesel Engine by Ceramic Materials II. Development of SiC Valve Lifter by Injection Molding Method (Ceramic 재질을 이용한 자동차용 대형 디젤엔진 Valve Lifter 연구 II. 사출성형에 의한 탄화규소질 Valve Lifter 개발)

  • 윤호욱;한인섭;임연수;정윤중
    • Journal of the Korean Ceramic Society
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    • v.35 no.2
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    • pp.172-179
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    • 1998
  • Valve lifter namely tappet is supported by lifter hole which is located upper side of camshaft in cylinder block transforms rotatic mvement of camshaft into linear movement and helps to open and shut the en-gine valve as an engine parts. The face of valve lifter which is continuously contacting with camshaft brings about abnormal wears such as unfair wear and early wear because it is severely loaded in the valve train system. These wears act as a defect like over-clearance and cause imperfect combustion of fuel during the valve lifting in the combustion chamber. Consequently this imperfect combustion makes the engine out-put decrease and has cause on air pollution. To prevent these wears therefore The valve lifter cast in me-tal developed into SiC ceramics valve lifter which has an excellence in wear and impact resistance As a results the optimum process conditions like injection condition mixture ratio and debonding process could be established. After sintering fine-sinered dual microstructure in which prior ${\alpha}$-SiC matches well with new SiC(${\beta}$-SiC) produced by reaction among the ${\alpha}$-SiC carbon and silicon was obtained. Based on the study it is verified that mechanical properties of SiC valve lifter are excellent in Vickers hardness 1100-1200 bending strength (300-350 Pa) fracture toughness(1.5-1.7 Mpa$.$m1/2) Through engine dynamo test-ing SiC valve lifter and metal valve lifter are examined and compared into abnormal phenomena such as early fracture unfair and early wear. It is hoped that this research will serve as an important springboard for the future study of heavy duty diesel engine parts developed by ceramics which has a good wear resis-tance relaibility and lightability.

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