• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.75-75
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• 2004

Carbon/epoxy는 기존의 금속재료에 비해 피로강도 및 기계적 특성이 매우 우수하다. 따라서 최근 튜브형태의 Carbon/epoxy 활용방안이 부각되고 있다. 그러나 Carbon/epoxy는 탄소재료의 특성상 고압, 충격 및 부식에 매우 취약하다. 또한, 장기간 고압피로 및 크리프에 노출될 경우, 금속재료에서는 관찰할 수 없는 층간분리(delamination)가 발생된다. 이러한 층간분리는 섬유방향과 평행하게 진전될 때 급격한 파손을 야기하므로 층간분리에 대한 메커니즘을 이해하고 그 방지책을 강구하는 것은 매우 중요하다.(중략)

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.163-163
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• 2012

차세대 모바일용 전자디스플레이로 각광받고 있는 FOLED (flexible organic light emitting display)의 연구에서 display의 신뢰성과 수명은 매우 중요한 연구 테마이다. OLED의 수명단축에 영향을 미치는 요소는 수분에 의한 열화가 가장 치명적이다. Barrier layer를 통한 수분의 주요 침투경로는 pin-hole과 void 등과 같은 defect에 의한 것으로 보인다. 수분의 침투 경로를 제어하는 OLED용 barrier layer의 요구조건은 WVTR (water vapor transmission rate)이 $10^{-6}g/m^2{\cdot}day$ 이하로 낮아야 한다. Barrier layer가 가져야 할 핵심적인 조건은 유연성을 가지면서 동시에 WVTR 값이 매우 낮아야 하는데, 아직까지 이를 만족하는 barrier layer의 개발은 아직 덜된 실정이다. 본 연구에서는 PET (polyethylene terephthalate) 기판에 sputtering법으로 barrier layer를 제조하였다. 증착에 이용한 타겟은 두가지 종류인 Al과 $Al_2O_3$를 사용하였으며, 다층박막으로 제조하였다. 제조된 barrier layer의 수분침투 특성은 WVTR의 측정으로, 유연성의 평가는 in-situ fatigue test를 수행하여 측정하였다. 종합적인 특성 평가를 위하여 SEM과 AFM (atomic force microscope) 관찰도 하였다.

• Proceedings of KOSOMES biannual meeting
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• 2002.10a
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• pp.59-70
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• 2002

A heating cargo is solidified by several reasons during carnage. This study is to analyse a cargo accident which 811, 202 US barrels of Nile Blend crude oil reamined solid in the tanks after discharge. There are some possibilities that low temperature of loading cargo below cloud point and wax appearance temperature at loading time, heating interruption during voyage or discharging, and prohibition of crude oil washing during discharging might influence the cargo solidified. But we concluded that the defect of heating system would most affect the heating cargo solidified locally, and which blocked drain hole of bottom transverse and web frame and they obstruct flow of heating cargo in the tanks.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.77-87
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• 1993

PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

• Journal of the Korea Institute of Military Science and Technology
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• v.10 no.3
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• pp.173-180
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• 2007

In this paper, we have proposed a simple finite element model for separation mode analysis on the roadwheel and track assembly of main battle tank and established a contact stress-based mechanism which could explain the initiation and growth of separation defect occurred during the test of padreplacable track. It was proved that the longitudinal contact shear stress component on the pin hole region of the track shoe body which is parallel to the driving direction is consistent with the crack initiation at the bonding surface between track shoe and wheel-side rubber. The longitudinal shear stress increased locally near the separated region after the separation initiated. So we could assume that the local stress concentration accelerates the separation growth according to the shear mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.85-88
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• 2006

The transport properties of amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. The effects of As addition on the carrier mobility and recombination lifetime in amorphous selenium (a-Se) films have been studied using the moving photocarrier grating (MPG) technique. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with the drift mobilities of holes and electrons obtained by time of flight (TOF) measurement.

• Journal of Chest Surgery
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• v.21 no.4
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• pp.757-760
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• 1988

Double mitral valve orifice is an unusual congenital abnormality, and is rarely of clinical importance. That abnormality not produce hemodynamic deficits, but it has been associated with other congenital heart diseases, especially atrioventricular canal defects, and so it is surgically important condition. After the first report by M.S. Greenfield in 1876, there are only a few reported cases all over the world. We experienced two cases of double mitral valve orifice with atrioventricular canal defect. The small accessory mitral orifice was placed in anterior mitral leaflet as a hole type in both cases. The A-V canal defects are corrected with a one patch technique, but the accessory orifices are left unclosed because there were no mitral regurgitations through the orifice. On the 4th postoperative day, the patients have been performed echocardiography; both had no mitral regurgitation. Both of patients are now being follow-up and we find no specific problems. A small accessory mitral orifice may be left unclosed and rarely produce significant regurgitation, conclusively.

• Bulletin of the Korean Chemical Society
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• v.9 no.1
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• pp.21-24
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• 1988

The electrical conductivitv of the system $ThO_2-Ho_2O_3$ was measured in the temperature range 600-$1100^{\circ}C$ and $Po_2$range $10^{-5}-2{\times}10^{-1}$ atm. The mean value of activation energy was 1.45 eV. The observed conductivity dependence on $Po_2$ was ${Po_2}^{1/4}$ at $Po_2$'s above $10^{-3}$ atm and was independent on oxygen partial pressure at $Po_2$'s below $10^{-3}$ atm. It is suggested that these dependences are due to a mixed ionic plus electron hole conduction by Vo defect.

• Journal of the Korean Society for Railway
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• v.6 no.2
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• pp.81-86
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• 2003

This study proposes the neural network simulator for the integrity evaluation of weld zone in railway rails. For these purposes, the ultrasonic signals for defects(crack) of weld zone in frames are acquired in the type of time series data and echo strength. The detection of the natural defects in railway truck is performed using the characteristics of echodynamic pattern in ultrasonic signal. And then their applications evaluated feature extraction based on the time-frequency-attractor domain(peak to peak, rise time, rise slope, fall time, fall slope, pulse duration, power spectrum, and bandwidth) and attractor characteristics (fractal dimension and attractor quadrant) etc. The constructed neural network simulator agrees fairly well with the measured results of test block(defect location, beam propagation distance, echo strength, etc). The Proposed neural network simulator in this study can be used for the integrity evaluation of weld zone in railway rails.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.119-119
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• 2011

This study examined the synthesis of large area graphene and the change of its characteristics depending on the ratio of CH4/H2 by using the thermal CVD methods and performed the experiments to control the electron-hole conduction and Dirac-point of graphene by using chemical doping methods. Firstly, with regard to the characteristics of the large area graphene depending on the ratio of CH4/H2, hydrophobic characteristics of the graphene changed to hydrophilic characteristics as the ratio of CH4/H2 reduces. The angle of contact also increased to 78$^{\circ}$ from 58$^{\circ}$. According to the results of Raman spectroscopy showing the degree of defect, the ratio of I(D)/I(G) increases to 0.42% from 0.25% and the surface resistance also increased to 950 ${\Omega}$ from 750 ${\Omega}$/sq. As for the graphene synthesis at the high temperature of 1,000$^{\circ}$ by using CH4/H2 in a Cu-Foil, the possibility of graphene formation was determined as a function of the ratio of H2 included in the fixed quantity of CH4 as per specifications of every equipment. It was observed that the excessive amount of H2 prevented graphene from forming, as extra H-atoms and molecules activated the reaction to C-bond of graphene. Secondly, in the experiment for the electron-hole conduction and the Dirac-point of graphene using the chemical doping method, the shift of Dirac-point and the change in the electron-hole conduction were observed for both the N-type (PEI) and the P-type (Diazonium) dopings. The ID-VG results show that, for the N-type (PEI) doped graphene, Dirac-point shifted to the left (-voltage direction) by 90V at an hour and by 130 V at 2 hours respectively, compared to the pristine graphene. Carrier mobility was also reduced by 1,600 cm2/Vs (1 hour) and 1,100 cm2/Vs (2 hours), compared to the maximum hole mobility of the pristine graphene.