• Transactions of the Korean Society of Mechanical Engineers A
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• 제40권6호
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• pp.531-537
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• 2016

The damage and fracture of machine or structure are caused by the crack happened from the defect existed at the inside of material. The properties of crack propagation and growth characteristic must be considered because there are many cases at which these cracks are densely existed. Therefore, this study investigates the fracture property due to the position of crack and hole inside the standard compact tension (C. T.) specimen. When the concentrated load is applied eccentrically at the standard C. T. specimen, the fracture mechanical behavior due to the existence or non-existence and the position of hole near crack is investigated. As the result of analysis study, model 3 (in case of the distance of 2mm on the horizontal direction between the end part and hole as the specimen model existed with one hole near the crack) has the maximum deformation, stress and deformation energy of the most values among three models. As the distance between the crack and hole inside the specimen becomes nearer, the maximum stress becomes higher in cases of three models. Apart from the number of holes, it is seen that the maximum stress becomes higher near the crack when the hole exists near the crack inside the specimen. If the hole inside the machine or the mechanical structure is punctured by using the result of this study, it is thought that the occurred breakage or breakdown can be prevented by reducing the fracture stress happened at the specimen.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.239.2-239.2
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• 2016

Numerous studies and approaches have been performed for solar cells to improve their photoelectric conversion efficiencies. Among them, the study for electrode containing transparent conducting oxide (TCO) layers is one of issues as well as for the cell structure based on band theory. In this study, we focused on an interfacial layer between p-type silicon and indium tin oxide (ITO) well-known as TCO materials. According to current-voltage characteristics for the sample with the interfacial layers, the improvement of band alignment between p-type silicon and ITO was observed, and their ohmic properties were enhanced in the proper condition of deposition. To investigate cause of this improvement, spectroscopic ellipsometry and ultraviolet photoelectron spectroscopy were utilized. Using these techniques, band alignment and defect in the band gap were examined. The major materials of the interfacial layer are vanadium oxide and tungsten oxide, which are notable as a hole transfer layer in the organic solar cells. Finally, the interfacial layer was applied to silicon solar cells to see the actual behavior of carriers in the solar cells. In the case of vanadium oxide, we found 10% of improvement of photoelectric conversion efficiencies, compared to solar cells without interfacial layers.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권2호
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• pp.164-169
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• 2008

The effects of the antisite related defects on the electronic structure of silica and the gate leakage current have been investigated using first-principles calculations. Energy levels related to the antisite defects in silicon dioxide have been introduced into the bandgap, which are nearly 2.0 eV from the top of the valence band. Combining with the electronic structures calculated from first-principles simulations, tunneling currents through the silica layer with antisite defects have been calculated. The tunneling current calculations show that the hole tunneling currents assisted by the antisite defects will be dominant at low oxide field whereas the electron direct tunneling current will be dominant at high oxide field. With increased thickness of the defect layer, the threshold point where the hole tunneling current assisted by antisite defects in silica is equal to the electron direct tunneling current extends to higher oxide field.

• The Korean Journal of Ceramics
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• 제5권3호
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• pp.288-295
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• 1999

Partial conductivities contributed by electron holes, oxygen ions, and protons were caluclated in $SrZr_{0.95}Y_{0.05}O_{2.975}$, using the reported formulae derived from the defect chemistry of HTPCs. Required parameters were obtained from the graphical analysis of total conductivity variation against partial pressure of water vapor and oxygen. Predicted overall conductivities showed a reasonable agreement with experimental measurements. The conductivity of the material showed a linear increase with square root of the water vapor pressure. This increase was due to proton conduction in an almost pure ionic conductivity. The calculation of partial conductivities at $800^{\circ}C$ resulted in an almost pure ionic conductivity at $P_{02}=10^{-10}$ atm and a predominant hole conductivity at $P_{02}=10^{-10}$ atm. Pure proton conduction was not expected at this temperature, contrary to the earlier reports. Discussions were made in relation with reported thermodynamic data and defect structure of the material. It was shown that from the total conductivity dependence on water vapor pressure, the pure ionic conductivity at low oxygen partial pressures could be separated into protonic and oxygen ionic conductivity in $ZrO_2$-based HTPCs.

• Transactions of the Korean Society of Mechanical Engineers A
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• 제23권7호
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• pp.1065-1074
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• 1999

This study proposes the analysis and evaluation method of time series ultrasonic signal using the chaotic feature extraction for ultrasonic pattern recognition. Features extracted from time series data using the chaotic time series signal analysis quantitatively welding defects. For this purpose analysis objective in this study is fractal dimension and Lyapunov exponent. Trajectory changes in the strange attractor indicated that even same type of defects carried substantial difference in chaoticity resulting from distance shills such as 0.5 and 1.0 skip distance. Such differences in chaoticity enables the evaluation of unique features of defects in the weld zone. In experiment fractal(correlation) dimension and Lyapunov exponent extracted from 6dB ultrasonic defect signals of weld zone showed chaoticity. In quantitative chaotic feature extraction, feature values(mean values) of 4.2690 and 0.0907 in the case of porosity and 4.2432 and 0.0888 in the case of incomplete penetration were proposed on the basis of fractal dimension and Lyapunov exponent. Proposed chaotic feature extraction in this study enhances ultrasonic pattern recognition results from defect signals of weld zone such as vertical hole.

• Maxillofacial Plastic and Reconstructive Surgery
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• 제37권
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• pp.37.1-37.4
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• 2015

Keratocystic odontogenic tumors can occur in any area of the maxilla or mandible. According to their size, location, and relations with surrounding structures, they are treated by cyst enucleation or enucleation after either marsupialization or decompression. Enucleation is performed when cysts are not large and when only minor damage to adjacent anatomical structures is expected. Although marsupialization and decompression follow the same basic bone-regeneration principle, which is to say, by reducing the pressure within the cyst, the former leaves a large defect after healing due to the large fistula necessary to induce the conversion of the cyst-lining epithelia to oral epithelia; the latter leaves only a relatively small defect, because of the continuous washing carried out by means of a tube inserted into a small hole in the cyst. In the latter case too, a decompressor appropriate for the focal position is required, owing to the importance of maintaining the device and controlling for oral hygiene. We report herein decompression treatment with a patient-customized device for an extensive cyst in the anterior region of the mandible.

• Journal of Surface Science and Engineering
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• 제46권4호
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• pp.153-157
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• 2013

The defect like the void or seam is frequently generated in the PCB (Printed Circuit Board) Via-Filling plating inside via hole. The organic additives including the accelerating agent, inhibitor, leveler, and etc. are needed for the copper Via-Filling plating without this defect for the plating bath. However, the decomposition of the organic additive reduces the lifetime of the plating bath during the plating process, or it becomes the factor reducing the reliability of the Via-Filling. In this paper, the interaction of each organic additives and the decomposition of additive were discussed. As to the accelerating agent, the bis (3-sulfopropyl) disulfide (SPS) and leveler the Janus Green B (JGB) and inhibitor used the polyethlylene glycol 8000 (PEG). The research on the interaction of the organic additives and decomposition implemented in the galvanostat method. The additive decomposition time was confirmed in the plating process from 0 Ah/l (AmpereHour/ liter) to 100 Ah/l with the potential change.

• Transactions of the Korean Society of Automotive Engineers
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• 제17권3호
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• pp.45-53
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• 2009

Die casting process of Mg alloys for high temperature applications was studied to produce an engine oil pan. The aim of this paper is to evaluate die casting processes of the Aluminium oil pan and in parallel to apply new Mg alloy for die casting the oil pan. Temperature distributions of the die and flow pattern of the alloys in cavity were simulated to diecast a new Mg alloy by the flow simulation software. Dies have to be modified according to material characteristics because melting temperature and heat capacity are different. We changed the shape and position of runner, gate, vent hole and overflow by the simulation results. After several trial and error, oil pans of AE44 and MRI153M Mg alloys are produced successfully without defect. Sleeve filling ratio, cavity filling time and shot speed of die casting machine are important parameter to minimize the defect for die casting Magnesium alloy.

• Journal of the Korean Society for Precision Engineering
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• 제12권10호
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• pp.78-88
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• 1995

For producing iron or steel products with good quality, the concentration of the material components should be analyzed quickly with high relability using XRF(Fluorescent X-Ray Spectrometer). Since the analysis results are much dependent upon the surface con- dition, the samples have to be prepared to have good test condition. This study presents an image processing system for inspecting the surface condition of the iron test sample. In order to use thd computer vision system, we need to develop a lighting device and image processing algorithm. For the adequate lighting device of inspection system, the indirect lighting device is contrived to cut the external light and provide uniform, stable and cold light. The image processing algorithm is aimed to reduce inspection time and to get similar analyzing results to those of the experienced operators. At first, the image processing algorithm checks whether the surface of the iron sample is ground well or not. Then, the defects; hole or dig are conted and surface condition is evaluated. In addition, the algorithm gives the reliability of the analyzing results in order to help operator's decision.

• Journal of the Korean Chemical Society
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• 제28권3호
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• pp.149-154
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• 1984

The electrical conductivity of p-type yttrium sesquioxide has been measured as a function of temperature and of oxygen partial pressure at temperatures from 650 to 1050$^{\circ}C$C and oxygen partial pressures from $1 {\times}10^{-5}\;to\;2{\times}10^{-1}$atm. Plots of log conductivity vs. 1/T at constant oxygen partial pressures are found to be linear with low-and high-temperature dependences of conductivity. The high-temperature dependence of conductivity shows two different defect structures. The plots of log conductivity vs. log $Po_2$ are found to be linear at $Po_2$'s of $10^{-5}\;to\;10^{-1}$ atm. The electrical conductivity dependences on $Po_2$ are found to be ${{\sigma}{\propto}Po_2}^{1/6}$at $850{\sim}950^{\circ}C,\;{{\sigma}{\propto}Po_2}^{3/16}$ at $950{\sim}1050^{\circ}C\;and\;{{\sigma}{\propto}Po_2}^{1/7.5}{\sim}{{\sigma}{\propto}Po_2}^{1/8.3}\;at\;650{\sim}800^{\circ}C$, respectively. The defect structures are$O_i{''}$ at $850{\sim}950^{\circ}C$ and $V_M{'''}$ at $950{\sim}1050^{\circ}C$. The electron hole is main carrier type, however, ionic contribution is found at lower temperature portion.