• 한국전자현미경학회:학술대회논문집
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• 한국현미경학회 2005년도 제36차 춘계학술대회 및 제3회 HVEM 이용자 워크샵
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• pp.33-34
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• 2005

• Applied Microscopy
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• 제47권2호
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• pp.75-76
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• 2017

• Applied Microscopy
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• 제51권
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• pp.19.1-19.7
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• 2021

The main purpose of this paper is the preparation of transmission electron microscopy (TEM) samples from the microsized powders of lithium-ion secondary batteries. To avoid artefacts during TEM sample preparation, the use of ion slicer milling for thinning and maintaining the intrinsic structure is described. Argon-ion milling techniques have been widely examined to make optimal specimens, thereby making TEM analysis more reliable. In the past few years, the correction of spherical aberration (Cs) in scanning transmission electron microscopy (STEM) has been developing rapidly, which results in direct observation at an atomic level resolution not only at a high acceleration voltage but also at a deaccelerated voltage. In particular, low-kV application has markedly increased, which requires a sufficiently transparent specimen without structural distortion during the sample preparation process. In this study, sample preparation for high-resolution STEM observation is accomplished, and investigations on the crystal integrity are carried out by Cs-corrected STEM.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.257-257
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• 2011

The amorphous indium-gallium-zinc-oxide (a-IGZO) materials for use in high performance display research fields are strongly investigated due to its good performance, such as high mobility and better transparency. However, the stability of a-IGZO materials is increasingly becoming one of critical issues due to the sub-gap electron trap sites induced by rough interfaces during deposition processing. It is well-known that the threshold voltage shift is related to interface roughness and oxygen vacancy formed by breaking weak chemical bonds. Here, we report the better properties of transparent oxide transistors by reducing the threshold voltage shift with an external rf plasma supported magnetron sputtering system. Mainly, our sputtering method causes the surface of sample to be sleek, so that it prevents the formation of various defects, such as shallow electron trap sites in the interface. External rf power was applied from 0 to 50W during RF sputtering process to enhance the stability of our oxide transistor without having a large voltage shift. To observe the effects of external rf-plasma source on the properties of our devices, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM) are carried out to observe surface roughness and morphology of sputtered thin film. In addition, typical electrical properties, such as I-V characteristics are analyzed.

• Applied Microscopy
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• 제46권4호
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• pp.244-252
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• 2016

This paper describes a new design of carbon nanotube tip. $Nanocly^{TM}$ NC 7000 Thin Multiwall Carbon Nanotubes of carbon purity (90%) and average diameter tube 9.5 nm with a high aspect-ratio (>150) were used. These tips were manufactured by employing a drawing technique using a glass puller. The glass microemitters with internal carbon nanotubes show a switch-on effect to a high current level (1 to $20{\mu}A$). A field electron microscope with a tip (cathode)-screen (anode) separation at ~10 mm was used to characterize the electron emitters. The system was evacuated down to a base pressure of ${\sim}10^{-9}$ mbar when baked at up to ${\sim}200^{\circ}C$ overnight. This allowed measurements of typical Field Electron Emission characteristics; namely the current-voltage (I-V) characteristics and the emission images on a conductive phosphorus screen (the anode). Fowler-Nordheim plots of the current-voltage characteristics show current switch-on for each of these emitters.

• Applied Microscopy
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• 제46권3호
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• pp.164-166
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• 2016

Electron channeling contrast imaging (ECCI) is a powerful analyzing tool for identifying lattice defects like dislocations and twin boundaries. By using diffraction-based scanning electron microscopy technique, it enables microstructure analysis, which is comparable to that obtained by transmission electron microscopy that is mostly used in defect analysis. In this report, the optimal conditions for investigating crystal defects are suggested. We could obtain the best ECCI images when both acceleration voltage and probe current are high (30 kV and 20 nA). Also, shortening the working distance (6 mm) enhances the quality of defect imaging.

• 한국레이저가공학회지
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• 제12권2호
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• pp.26-30
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• 2009

Scanning Electron Microscopy (SEM) includes high voltage generator, electron gun, column, secondary electron detector, scan coil system and image grabber. Column includes electron lenses (condenser lens and objective lens). Condenser lens generates fringe field, makes focal length and control spot size. Focal length represents property of lens. Objective lens control focus. Most of the electrons emitted from the filament, are captured by the anode. The portion of the electron current that leaves the gun through the hole in the anode is called the beam current. Electron beam probe is called the focused beam on the specimen. Because of the lens and aperture, the probe current becomes smaller than the beam current. It generate various signals(backscattered electron, secondary electron) in an interaction with the specimen atoms. In this paper, we describe the result of research to develop the core elements for low-resolution SEM.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2007년도 추계학술대회 논문집
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• pp.461-462
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• 2007

• Applied Microscopy
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• 제42권2호
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• pp.105-109
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• 2012

Electron tomography (ET) of biological specimens is performed from a series of images obtained over a range of tilt angles in a transmission electron microscope. When using the high voltage electron microscope (HVEM), various noises appear in EM images acquired from thick sections by high voltage electron beam. In order to obtain an adequate result in electron tomograms that allow visualization of rather complex and mega-cellular structure such as brain tissue, it is necessary to remove the noise in each original tilt images of thick section. Using band-pass filtering of original tilt images, the filtered images are obtained and used to assemble a reconstructed tomogram. The qualified 3D tomogram from filtered images results in a considerable reduction of the noises compared to conventional tomogram. In conclusion, this study suggests that band-pass filtering is effective to improve the brightness and intensity of HVEM produced tomograms acquired from micron-thick sections of biological specimens.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2008년도 추계학술발표대회
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• pp.100-103
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• 2008

한국기초과학지원연구원(KBSI, Korea Basic Science Institute)에서는 국내 유일의 초고전압투과전자현미경(HVEM, High Voltage Electron Microscopy)을 비롯하여 3대의 일반투과 전자현미경을 보유하고 있다. 전자현미경을 통하여 관찰된 이미지는 각 단계별로 tilting 되어 저장된 이미지로서 관찰자에게 보다 나은 관찰 환경의 구성을 위해 3D로의 reconstruction은 필수 과정이라고 할 수 있겠다. 이 과정 중 카메라 중심에서 벋어난 부분의 왜곡을 워핑기법을 통하여 최대한 감소시킨다. 이런 전처리 과정을 통하여 3D 구조물을 구성하게 되면 초기 이미지를 그대로 사용하는 것보다 한 단계 더 나은 결과물을 얻어낼 수 있다. 이미지 전처리를 이용한 전자현미경 볼륨 랜더링 시스템의 구축은 관찰자에게 보다 편리하며 빠른 실험 환경을 제공하여 줄 수 있고, 이해하기 쉽고 실제 모습에 가까운 형태의 실험 결과물을 접할 수 있게 된다.