• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.244.1-244.1
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• 2015

The Ag Nanowire is one of the materials that are widely studied as alternatives to ITO and is available for large area, low cost process and the flexible transparent electrode. However, Ag nanowire can have the problem of a lack of stability at high temperatures, making this impossible to form a film. Using a structure of ITO/AgNW/ITO in photodetector device, we improved the properties of the ITO in the IR region and improved the thermal stability of the AgNW. The structure of ITO/AgNW/ITO has a high transmittance value of 89% at a wavelength of 900 nm and provide a good electrical property. The AgNWs embedded ITO film has a high transmittance, this is because of the light scattering from the AgNW. The thermal stability of the developed ITO/AgNWs/ITO films were investigated and found AgNWs embedded ITO films posses considerable high stability compared to the solo AgNWs on the Si surface. The ITO/AgNWs/ITO device showed a improved photo-response ratio compared to those of the conventional TC device in IR region. This is attributed to the high transmittance and low sheet resistance. We suggest an effective design scheme for IR-sensitive photodetection by using an AgNW embedded ITO.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.4
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• pp.187-192
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• 2023

This paper deposited CdTe thin films on ITO glass substrates using sputtering equipment while changing RF power. As a result of measuring the thickness of the thin film, 1481Å at 100W, 2985Å at 150W, and 4684Å at 200W. And the mobility was measured as 8.43 cm2/Vs for 100W, 7.91 cm2/Vs for 150W, and 6.57 cm2/Vs for 200W. It can be seen that the thickness and mobility of the thin film are inversely proportional. As a result of confirming the transmittance, the transmittance was 84% at 905nm for 100W, the transmittance was 71% at 825nm for 150W, and 77% at 874nm for 200W. At 100 W, the thickness of the thin film was thin, so the transmittance was measured to be high. In other words, the correlation between transmittance and thickness can be seen. As a result of measuring the FHWM and particle size by changing the RF Power, 100W was calculated as 0.18, 150W was calculated as 0.19, and 200W was calculated as 0.73. The size of the particles was formed at 8.47Å at 100W, 7.98Å at 150W, and 8.7Å, which is the largest at 200W. In conclusion, it was found that the FHWM and particle size were inversely proportional.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.29-33
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• 2015

This paper presents the results of the optical characteristics of ITO thin film with different buffer layer thicknesses of $SiO_2$ and $Nb_2O_5$ for touch sensor application. $SiO_2$ and $Nb_2O_5$ buffer layers were deposited using RF magnetron sputtering equipment. The buffer layers were inserted between glass and ITO layers. In order to compare with the experimental results, the Essential Macleod Program (EMP) was adopted. Based on EMP simulation, the [$Nb_2O_5{\mid}SiO_2{\mid}ITO$] multi-layered thin film exhibited high transmittance of more than 85% in the visible region. The actual experimental results also showed transmittance of more than 85% in the visible region, indicating that the simulated results were well matched with the experimental results. The sheet resistance of ITO based film was about $340{\Omega}/sq$. The surface roughness maintained a relatively small value within the range of 0.1~0.4 nm when using the $Nb_2O_5$ and $SiO_2$ buffer layers.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.110-114
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• 2014

We propose a low temperature sol-gel ZnO/Ag nanowire composite thin film to fulfill low temperature and low cost requirements, which are essential criteria in future flexible electronic devices. In this proposed thin film, Ag nanowire plays the role of electrical conduction, and sol-gel ZnO provides a structural medium with a high visible transmittance. Low temperature restriction in the sol-gel fabrication process prevents sufficient oxidation of Zn acetate precursors, which were solved by a post-coating treatment with ultraviolet light irradiation. Composite thin film formation was performed by spin coating methods with a mixed precursor solution or in a sequential manner. We obtained an average visible transmittance larger than 85% and a sheet resistance smaller than $50{\Omega}/sq$. After optimization in a fabricated composite transparent conductive thin film with the thickness around 100 nm. Similar experimental demonstration in a flexible substrate (polyethyleneterephthalate) was successful, which implies a promising application opportunity of this technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.303-308
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• 2011

The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.95.1-95.1
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• 2010

Transparent conducting ZnO films were deposited to apply DSSC Substrate on glass substrates at $500^{\circ}C$ by ionbeam-assisted deposition. Crystallinity, microstructure, surface roughness, chemical composition, electrical and optical properties of the films were investigated as a function of deposition parameters such as ion energy, and substrate temperature. The microstructure of the polycrystalline ZnO films on the glass substrate were closely related to the oxygen ion energy, arrival ratio of oxygen to Zinc Ion bombarded on the growing surface. The main effect of energetic ion bombardment on the growing surface of the film may be divided into two categories; 1) the enhancement of adatom mobility at low energetic ion bombardment and 2) the surface damage by radiation damage at high energetic ion bombardment. The domain structure was obtained in the films deposited at 300 eV. With increasing the ion energy to 600 eV, the domain structure was changed into the grain structure. In case of the low energy ion bombardment of 300 eV, the microstructure of the film was changed from the grain structure to the domain structure with increasing arrival ratio. At the high energy ion bombardment of 600 eV, however, the only grain structure was observed. The electrical properties of the deposited films were significantly related to the change of microstructure. The films with the domain structure had larger carrier concentration and mobility than those with the grain structure, because the grain boundary scattering was reduced in the large size domains compared with the small size grains. The optical transmittance of ZnO films was dependent on a surface roughness. The ZnO films with small surface roughness, represented high transmittance in the visible range because of a decreased light surface scattering. By varying the ion energy and arrival ratio, the resistivity and optical transmittance of the films were varied from $1.1{\times}10^{-4}$ to $2.3{\times}10^{-2}{\Omega}cm$ and from 80 to 87%, respectively. The ZnO film deposited at 300 eV, and substrate temperature of $500^{\circ}C$ had the resistivity of $1.1{\times}10^{-4}{\Omega}cm$ and optical transmittance of 85% in visible range. As a result of experiments, we provides a suggestition that ZnO thin Films can be effectively used as the DSSC substrate Materials.

• Korean Journal of Optics and Photonics
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• v.32 no.5
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• pp.220-229
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• 2021

The optical characteristics of high-power direct-lit white light-emitting diode (LED) lighting were investigated, where a quantum dot (QD) film was adopted to enhance the color-rendering index (CRI). The transmittance of the diffuser plate and the concentration of the QD film were varied in this study. The color coordinates and the correlated color temperature (CCT) did not show any appreciable change, while the CRI values increased slightly as the transmittance of the diffuser plate decreased. The investigated optical properties were nearly independent of the viewing angle, and the luminance distribution was close to Lambertian. The CCT decreased from approximately 6000 K to approximately 4000 K as the concentration of the QD film increased from 0 to 7.5 wt%, which was due to the enhanced red component in the emission spectrum. The CRI increased to approximately 95 for some optical configurations of the lighting. These results demonstrate that glare-free, color-changeable, high-rendering LED lighting can be realized by using a combination of a diffuser plate of appropriate transmittance and a red QD film.

• Journal of Korean Ophthalmic Optics Society
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• v.19 no.4
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• pp.471-477
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• 2014

Purpose: We have analyzed the transmittance distribution of the ocular lens using local transmittance microscope to investigate the optical homogeneity of the lens. Methods: The transmittance of the laser which is focused on the surface of the ocular lens was measured by using the photo-detector and lock-in amplifier and analyzed. Multi-coated, uncoated, and progressive lenses were analyzed. Results: In the measurement of the progressive lens and a physical stimulated lens, local transmittance microscopy analysis showed a high degree of match with the measurement results through the optical microscope. In addition, the average value of the transmittance is reduced and the standard deviation was increased in the presence of optical defects. In unstimulated lens, there are a large impact on transmittance whether the anti-reflective coating is presence or absence in both the local transmittance microscopy and general transmittance analysis. Conclusions: The distribution of the transmittance measured by local transmission microscopy were changed when the various stimulus is applied to the lenses. These analyzes by local transmission microscopy can be utilized as a way to evaluate or determine the uniformity of the coating film or lens.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.179.1-179.1
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• 2015

Thickness-dependent electrical, structural, and optical properties of zinc oxide (ZnO) thin films on polyethylene terephthalate (PET) substrates were investigated in the very thin thickness range of 20 to 120 nm. A very unusual transition phenomenon, in which electrical resistance increases with an increase in film thickness, was observed. From structural and compositional analyses, this transition behavior was explained to arise from metallic Zn agglomerates dispersed in non-crystalline Zn-O matrix. It was unveiled that film thickness more than 80 nm is required for the development of hexagonal crystal structure of ZnO. ZnO films on PET substrates exhibited high optical transmittance and good mechanical flexibility in the thickness range. The results of this study would provide a valuable guideline for the design of ZnO thin films on organic substrates for practical applications.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.109-112
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• 2016

We demonstrated an alternative electrically controlled birefringence liquid crystal (ECB-LC) system with ion beam (IB)-irradiated yttrium gallium oxide (YGaO) alignment films using a sol-gel process. The surface roughness of the films was dependent on the annealing temperature; aggregated particles on surface were observed at lower annealing temperatures, whereas a smooth surface could be obtained with higher annealing temperatures. Higher transmittance in the visible region was observed at higher annealing temperatures. The film had an amorphous crystallographic state irrespective of the annealing temperature. Furthermore, ECB-LC cell with our IB-irradiated YGaO film yielded faster response time when compared to ECB-LC cell with rubbed polyimide. Considering the fast response time and high transmittance, the IB-irradiated YGaO-base LC system is a powerful alternative application for the liquid crystal display industry.