• Title/Summary/Keyword: High-temperature sintering

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Electrical Properties of Rosen Type piezoelectric transformers using Low Temperature Sintering PMN-PNN-PZT ceramics (저온소결 PMN-PNN-PZT계 세라믹스를 이용한 Rosen형 압전변압기의 전기적 특성)

  • Lee, Sang-Ho;Yoo, Ju-Hyun;Kim, In-Sung;Song, Jae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.53-53
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    • 2008
  • Piezoelectric transformers have been widely used such as DC-DC convertor, invertor, Ballast, etc. Because, the y have some merits compared with electro-magnetic transformers such as step-up ratio, high efficiency, small size and lg hit weight, etc. Piezoelectric transformer require high electromechanical coupling factor kp in order to induce a large out put power in proportional to applied electric field. And also, high mechanical quality factor Qm is required to prevent mechanical loss and heat generation. In general, PZT system ceramics should be sintered at high temperatures between 1200 and $1300^{\circ}C$ in order to obtain complete densification. Accordingly, environmental pollution due to its PbO evaporation. Hence, to reduce its sintering temperature, various kinds of material processing methods such as hot pressing, high energy mill, liquid phase sintering, and using ultra fine powder have been performed. Among these methods, liquid phase sintering is basically an effective method for aiding densification at low temperature. In this study, In order to comparis on low temperature sintering and solid state sintering piezoelectric transformers, rosen type transformers were fabricated u sing two PZT ceramics compositions and their electrical properties were investigated.

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Thermal Evolution of BaO-CuO Flux as Sintering Aid for Proton Conducting Ceramic Fuel Cells

  • Biswas, Mridula;Hong, Jongsup;Kim, Hyoungchul;Son, Ji-Won;Lee, Jong-Ho;Kim, Byung-Kook;Lee, Hae-Weon;Yoon, Kyung Joong
    • Journal of the Korean Ceramic Society
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    • v.53 no.5
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    • pp.506-510
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    • 2016
  • The eutectic melt of BaO-CuO flux is known to be a potential sintering aid for $Ba(Zr,Y)O_3$ (BZY) electrolyte for proton-conducting ceramic fuel cells (PCFCs). A density of BZY higher than 97% of theoretical density can be achieved via sintering at $1300^{\circ}C$ for 2 h using a flux composed of 28 mol% BaO and 72 mol% CuO. In the present study, chemical and structural evolution of BaO-CuO flux throughout the sintering process was investigated. An intermediate holding step at $1100^{\circ}C$ leads to formation of various impurity compounds such as $BaCuO_{1.977}$, $Ba_{0.92}Cu_{1.06}O_{2.28}$ and $Cu_{16}O_{14.15}$, which exhibit significantly larger unit cell volumes than the matrix. The presence of such secondary compounds with large lattice mismatch can potentially lead to mechanical failure. On the other hand, direct heating to the final sintering temperature produced CuO and $Cu_2O$ as secondary phases, whose unit cell volumes are close to that of the matrix. Therefore, the final composition of the flux is strongly affected by the thermal history, and a proper sintering schedule should be used to obtain the desired properties of the final product.

Influence of Sintering Additives and Temperature on Fabrication of LPS-SiC (액상소결법에 의한 탄화규소 제조시 소결조제와 온도의 영향)

  • JUNG HUN-CHAE;YOON HAN-KI
    • Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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    • 2004.11a
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    • pp.266-270
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    • 2004
  • SiC materials have been extensively studied for high temperature components in advanced energy system and advanced gas turbine because it has excellent high temperature strength, low coefficient of thermal expansion, good resistance to oxidation and good thermal and chemical stability etc. However, the brittle characteristics of SiC such as low fracture toughness and low strain-to fracture still impose a severe limitation on practical applications of SiC materials. For these reasons, SiC/SiC composites can be considered as a promising for various structural materials, because of their good fracture toughness compared with monolithic SiC ceramics. But, high temperature and pressure lead to the degradation of the reinforcing jiber during the hot pressing. Therefore, reduction of sintering temperature and pressure is key requirements for the fabrication of SiC/SiC composites by hot pressing method. In the present work, monolithic Liquid Phase Sintered SiC (LPS-SiC) was fabricated by hot pressing method in Ar atmosphere at $1800^{\circ}C$ under 20MPa using $Al_2O_3,\;Y_2O_3\;and\;SiO_2$ as sintering additives in order to low sintering temperature and sintering pressure. The starting powder was high purity $\beta-SiC$ nano-powder with all average particle size of 30mm. The characterization of LPS-SiC was investigated by means of SEM and three point bending test. Base on the composition of sintering additives-, microstructure- and mechanical property correlation, tire compositions of sintering additives are discussed.

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Low Temperature Processing of Nano-Sized Magnesia Ceramics Using Ultra High Pressure (초고압을 이용한 나노급 마그네시아 분말의 저온 소결 연구)

  • Song, Jeongho;Eom, Junghye;Noh, Yunyoung;Kim, Young-Wook;Song, Ohsung
    • Journal of the Korean Ceramic Society
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    • v.50 no.3
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    • pp.226-230
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    • 2013
  • We performed high pressure high temperature (HPHT) sintering for the 20 nm MgO powders at the temperatures from $600^{\circ}C$ to $1200^{\circ}C$ for only 5 min under 7 GPa pressure condition. To investigate the microstructure evolution and physical property change of the HPHT sintered MgO samples, we employed a scanning electron microscopy (SEM), density and Vickers hardness measurements. The SEM results showed that the grain size of the sintered MgO increased from 200 nm to $1.9{\mu}m$ as the sintering temperature increased. The density results showed that the sintered MgO achieved a more than 95% of the theoretical density in overall sintering temperature range. Based on Vickers hardness test, we confirmed that hardness increased as temperature increased. Our results implied that we might obtain the dense sintered MgO samples with an extremely short time and low temperature HPHT process compared to conventional electrical furnace sintering process.

Development of Ultra-high Capacitance MLCC through Low Temperature Sintering (저온소결을 통한 초고용량 MLCC 개발)

  • Sohn, Sung-Bum;Kim, Hyo-Sub;Song, Soon-Mo;Kim, Young-Tae;Hur, Kang-Heon
    • Journal of the Korean Ceramic Society
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    • v.46 no.2
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    • pp.146-154
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    • 2009
  • It is necessary to minimize the thickness of Ni inner electrode layer and to improve the coverage of inner electrode, for the purpose of developing the ultra high-capacity multi layered ceramic capacitor (MLCC). Thus, low temperature sintering of dielectric $BaTiO_3$ ceramic should be precedently investigated. In this work, the relationship between dielectric properties of MLCC and batch condition such as mixing and milling methods was investigated in the $BaTiO_3$(BT)-Dy-Mg-Ba system with borosilicate glass as a sintering agent. In addition, several chip properties of MLCC manufactured by low temperature sintering were compared with conventionally manufactured MLCC. It was found that low temperature sintered MLCC showed better DC-bias property and lower aging rate. It was also confirmed that the thickness of Ni inner electrode layer became thinner and the coverage of inner electrode was improved through low temperature sintering.

Sintering of porous ceramic of diatomite according to molding pressure and PEG content

  • Lee, Ye-Na;Ahn, Seok-Hwan;Nam, Hoseok;Nam, Ki-Woo
    • Journal of Ceramic Processing Research
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    • v.19 no.6
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    • pp.467-471
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    • 2018
  • Diatomite powder, a naturally occurring porous raw material, was used to make ceramic materials with porosity and high strength. The sintering behavior of the diatomite powder at various sintering temperatures suggests that diatomite monoliths with a high porosity and strength can be prepared at $1100^{\circ}C$. The compressive strength of the sintered diatomite monoliths increased as the sintering temperature increased, and the molding pressure of 2 MPa and the binder of 18.6 wt.% were excellent. When the sintering temperature rises, the diatomite powder is melted, and its pores gradually disappear. SEM images show that strengthening begins with the formation of inter-particle bonds at a low sintering temperature.

Microstructure and Electrical Characteristics of ZnO-Bi2O3 Ceramics (ZnO-Bi2O3계 세라믹스의 미세구조 및 전기적 특성)

  • 이승주;한상목
    • Journal of the Korean Ceramic Society
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    • v.25 no.6
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    • pp.645-654
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    • 1988
  • The microstructure and electrical characteristics of ZnO-Bi2O3 ceramics containing 5mol% Bi2O3 have been studied in relation to sintering temperature and mode. The distribution and thickness of Bi2O3 intergranular layer was varied with sintering temperature and mode. Intergranular layer was more homogeneous with increasing sintering temperature, when sintering by direct heating and rapid cooling mode showed the best distribution of intergranular layer. These microstructural changes affected electrical characteristics directly, at 140$0^{\circ}C$ and C mode obtained high value of electrical resistivity and nonlinear exponent. Varistor voltage decreased with increasing sintering temperature, increased with decreasing holding time at high temperature. Barrier voltage obtained by calculation was about 1.5V.

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Effects of Sintering Temperature on Fabrication Properties of LPS-SiC Ceramics (LPS-SiC 세라믹스 제조특성에 미치는 소결온도의 영향)

  • Park, Yi-Hyun;Jung, Hun-Chae;Kim, Dong-Hyun;Yoon, Han-Ki;Kohyam, Akira
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.204-209
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    • 2004
  • SiC materials have been extensively studied for high temperature components in advanced energy system and advanced gas turbine. However, the brittle characteristics of SiC such as low fracture toughness and low strain-to fracture still impose a severe limitation on practical applications of SiC materials. For these reasons, $SiC_f/SiC$ composites can be considered as a promising for various structural materials, because of their good fracture toughness compared with monolithic SiC ceramics. But, high temperature and pressure lead to the degradation of the reinforcing fiber during the hot pressing. Therefore, reduction of sintering temperature and pressure is key requirements for the fabrication of $SiC_f/SiC$ composites by hot pressing method. In the present work, Monolithic LPS-SiC was fabricated by hot pressing method in Ar atmosphere at 1760 $^{\circ}C$, 1780 $^{\circ}C$, 1800 $^{\circ}C$ and 1820 $^{\circ}C$ under 20 MPa using $Al_2O_3-Y_2O_3$ system as sintering additives in order to low sintering temperature. The starting powder was high purity ${\beta}-SiC$ nano-powder with an average particle size of 30 nm. Monolithic LPS-SiC was evaluated in terms of sintering density, micro-structure, flexural strength, elastic modulus and so on. Sintered density, flexural strength and elastic modulus of fabricated LPS-SiC increased with increasing the sintering temperature. In the micro-structure of this specimen, it was found that grain of sintered body was grown from 30 nm to 200 nm.

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Microstructure and Electrical Properties of $RuO_2$ System Thick Film Resistors ($RuO_2$계 후막저항체의 미세구조와 전기적성질)

  • 구본급;김호기
    • Journal of the Korean Ceramic Society
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    • v.27 no.3
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    • pp.337-344
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    • 1990
  • As a function of sintering temperature and time, the electrical properties of ruthenium based thick film resistors were investigated with microstructure. The variatio of resistivity and TCR(temperature coefficient of resistance)trends of sintered speciman at various sintering temperature were different low resistivity paste(Du Pont 1721) from high one(Du Pont 1741). These phenomena are deeply relative to microstructure of sintered film. With increasing the sintering temperature for 1721 system, the electrical sheet resistivity decreased, but again gradually increased above 80$0^{\circ}C$. And TCR trends in 1721 system are all positive. On the other hand the electrical sheet resistivity of 1741 resistor system decreased with sintering temperature. And TCR trends variable according to sintering temperature. TCR of speciman sintered at $700^{\circ}C$ was negative value, and TCR of 80$0^{\circ}C$ sintered speciman coexisted negative and positive value. But in case of speciman sintered at 90$0^{\circ}C$, TCR was positive value. As results of this fact, it was well known that the charge carrier contributied to electrical conduction in 1741 resistor system varied with sintering temperature.

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Influence of High-energy Milling and Sintering Cycle on Obtaining of TiAl from Elemental Ti and Al Powders

  • Esteban, P.G.;Gordo, E.;Ruiz-Navas, E.M.
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09b
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    • pp.727-728
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    • 2006
  • The present work studies the influence of high-energy milling (HEM) and sintering cycle of Ti and Al powders on the obtainment of TiAl. This study shows that HEM modifies the diffusion processes during the sintering stage. The samples were obtained by cold uniaxial and isostatic pressing, pre-sintered at different temperatures, and heated up to the sintering temperature. This study also shows the effect of powder additions processed by HEM on the sintering behavior of elemental Ti and Al powders.

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