• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3213-3217
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• 2012

Reactive adsorption desulfurization (RADS) experiments were conducted over a series of commercial metal oxide supports ($Al_2O_{3-}$, $SiO_{2-}$, $TiO_{2-}$ and $ZrO_{2-}$) supported Ni/ZnO adsorbents. The adsorbents were characterized by X-ray diffraction (XRD), temperature programmed reduction (TPR), and Fourier transform infrared spectroscopy (FTIR) in order to find out the influence of specific types of surface chemistry and structural characteristics on the sulfur adsorptive capacity. The desulfurization performance of all the studied adsorbents decreased in the following order: Ni/ZnO-$TiO_2$ > Ni/ZnO-$ZrO_2$ > Ni/ZnO-$SiO_2$ > Ni/ZnO-$Al_2O_3$. Ni/ZnO-$TiO_2$ shows the best performance and the three hour sulfur capacity can achieve 12.34 mg S/g adsorbent with a WHSV of $4h^{-1}$. Various characterization techniques suggest that weak interaction between active component and support component, high dispersion of NiO and ZnO, high reducibility and large total Lewis acidity of the adsorbents are important factors in achieving better RADS performance.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.15-19
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• 2017

The fossil fuel power consumption generates $CO_2$, which causes the problems such as global warming. Also, the increase in energy consumption has accelerated the depletion of the fossil fuels, and renewable energy is attracting attention. Among the renewable energies, the solar energy gets a lot of attention as the infinite clean energy source. But, the supply level of solar cell is insignificant due to high cost of generation of electric power in comparison with fossil fuels. Thus several researchers are recently doing the research on ultra-low-cost solar cells. Also, $Cu_2O$ is one of the applied materials as an absorption layer in ultra-low-cost solar cells. Cuprous oxide ($Cu_2O$) is highly desirable semiconductor oxide for use in solar energy conversion due to its direct band gap ($E_g={\sim}2.1eV$) and a high absorption coefficient that absorbs visible light of wavelengths up to 650 nm. In addition, $Cu_2O$ has several advantages such as non-toxicity, low cost and can be prepared with simple and cheap methods on large scale. In this work, we fabricated the $Cu_2O$ thin films by reactive sputtering method. The films were deposited with a Cu target with variable parameters such as substrate temperature, rf-power, and annealing condition. Finally, we confirmed the structural properties of thin films by XRD and SEM.

• Progress in Superconductivity and Cryogenics
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• v.18 no.4
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• pp.15-20
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• 2016

The effects of electron beam (EB) irradiation on the superconducting critical temperature ($T_c$) and critical current density ($J_c$) of YBCO films were studied. The YBCO thin films were irradiated using a KAERI EB accelerator with an energy of 0.2 MeV and a dose of $10^{15}-10^{16}e/cm^2$. A small $T_c$ decrease and a broad superconducting transition were observed as the EB dose increased. The value of $J_cs$ (at 20 K, 50 K and 70 K) increased at doses of $7.5{\times}10^{15}$ and $2.2{\times}10^{16}e/cm^2$. However, $J_cs$ decreased as the dose increased further. The X-ray diffraction (XRD) analysis showed that the c axis of YBCO was elongated and the full width at half maximum (FWHM) increased as the dose increased, which is strong evidence of the atomic displacement by EB irradiation. The transmission electron microscopy (TEM) showed that the amorphous layer formed in the vicinity of the surfaces of the irradiated films. The amorphous phase was often present as an isolated form in the interior of the films. In addition to the formation of the amorphous phase, many striations running along the a-b direction of YBCO were observed. The high magnification lattice image showed that the striations were stacking faults. The enhancement of $J_c$ by EB irradiation is likely to be due to the lattice distortion and the formation of defects such as vacancies and stacking faults. The decrease in $J_c$ at a high EB dose is attributed to the extension of the amorphous region of a non-superconducting phase.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.530-538
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• 2003

Samples with the nominal composition, B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$C $a_{2.03}$C $u_{3.06}$ $O_{10+}$$\delta$/ (110 K phase) high $T_{C}$ superconductors containing MgO as an additive were fabricated by a solid-state reaction method. Samples with 5~50 wt％ MgO were sintered at 820~86$0^{\circ}C$ for 24 h. The structural characteristics, critical temperature and grain size of the samples with different MgO contents were analyzed by XRD and SEM. As the MgO content increased, the intensity of MgO peaks and ratio of Bi-2212 phase in superconductors were intensified and the proportion of the phase transition from Bi-2223 to Bi-2212 was increased.d.creased.d.

• Progress in Superconductivity and Cryogenics
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• v.18 no.1
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• pp.37-40
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• 2016

We have investigated the addition effect of NiO magnetic nanoparticles on crystal structure, microstructure as well as superconducting properties of $MgB_2$. NiO-added $MgB_2$ samples were prepared by the solid-state reaction method. The superconducting transition temperature ($T_c$) of 37.91 K was obtained for pure $MgB_2$, and $T_c$ was found to decrease systematically on increasing the addition level of NiO. X-ray diffraction (XRD) analysis revealed that no substitution of Ni for Mg in the lattice of $MgB_2$ was occurred. The microstructural analysis shows that the pure $MgB_2$ sample consists of plate shape $MgB_2$ grains, and the grains get refined to smaller size with the addition of NiO nanoparticles. At 5 K, high values of critical current density ($J_c$) were obtained for small amount NiO-added $MgB_2$ samples as compared to pure sample. The enhancement in $J_c$ could be attributed to the refinement of $MgB_2$ grains which leads to high density of grain boundaries in NiO-added $MgB_2$ samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.178-178
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• 2010

With the scaling down of ULSI(Ultra Large Scale Integration) circuit of CMOS(Complementary Metal Oxide Semiconductor)based electronic devices, the electronic devices become more faster and smaller size that are promising field of semiconductor market. However, very narrow line width has some disadvantages. For example, because of narrow line width, deposition of conformal and thin barrier is difficult. Besides, proportion of barrier width is large, thus resistance is high. Conventional PVD(Physical Vapor Deposition) thin films are not able to gain a good quality and conformal layer. Hence, in order to get over these side effects, deposition of thin layer used of ALD(Atomic Layer Deposition) is important factor. Furthermore, it is essential that copper atomic diffusion into dielectric layer such as silicon oxide and hafnium oxide. If copper line is not surrounded by diffusion barrier, it cause the leakage current and devices degradation. There are some possible methods for improving the these secondary effects. In this study, TaNx, is used of Tertiarybutylimido tris (ethylamethlamino) tantalum (TBITEMAT), was deposited on the 24nm sized trench silicon oxide/silicon bi-layer substrate with good step coverage and high quality film using plasma enhanced atomic layer deposition (PEALD). And then copper was deposited on TaNx barrier using same deposition method. The thickness of TaNx was 4~5 nm. TaNx film was deposited the condition of under $300^{\circ}C$ and copper deposition temperature was under $120^{\circ}C$, and feeding time of TaNx and copper were 5 seconds and 5 seconds, relatively. Purge time of TaNx and copper films were 10 seconds and 6 seconds, relatively. XRD, TEM, AFM, I-V measurement(for testing leakage current and stability) were used to analyze this work. With this work, thin barrier layer(4~5nm) with deposited PEALD has good step coverage and good thermal stability. So the barrier properties of PEALD TaNx film are desirable for copper interconnection.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.398.1-398.1
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• 2014

The $Cu_2ZnSnSe_4$ (CZTSe) thin films solar cell is one of the next generation candidates for photovoltaic materials as the absorber of thin film solar cells because it has optimal bandgap (Eg=1.0eV) and high absorption coefficient of $10^4cm^{-1}$ in the visible length region. More importantly, CZTSe consists of abundant and non-toxic elements, so researches on CZTSe thin film solar cells have been increasing significantly in recent years. CZTSe thin film has very similar structure and properties with the CIGS thin film by substituting In with Zn and Ga with Sn. In this study, As-deposited CZTSe thin films have been deposited onto soda lime glass (SLG) substrates at different deposition condition using Pulsed Laser Deposition (PLD) technique without post-annealing process. The effects of deposition conditions (deposition time, deposition temperature) onto the structural, compositional and optical properties of CZTSe thin films have been investigated, without experiencing selenization process. The XRD pattern shows that quaternary CZTSe films with a stannite single phase. The existence of (112), (204), (312), (008), (316) peaks indicates all films grew and crystallized as a stannite-type structure, which is in a good agreement with the diffraction pattern of CZTSe single crystal. All the films were observed to be polycrystalline in nature with a high (112) predominant orientation at $2{\theta}{\sim}26.8^{\circ}$. The carrier concentration, mobility, resistivity and optical band gap of CZTSe thin films depending on the deposition conditions. Average energy band gap of the CZTSe thin films is about 1.3 eV.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.587-592
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• 2007

Al-42wt%Nb powder was prepared by high-energy mechanical milling(HEMM). The particle size, phase transformation and microstructure of the as-milled powder were investigated by particle size distribution (PSD) analyzer, scanning electron microscopy (SEM), X-ray diffractometery (XRD), transmission electron microscopy (TEM)and differential thermal analysis (DTA). The milled powders were heated to a sintering temperature at 1000C with under vaccum with vaccum tube furnace. Microstructural examination of sintered Ti-42wt%Nb alloy using 4h-milled powder showed Ti-rich phases (${\alpha}$-Ti) which are fine and homogeneously distributed in the matrix (Nb-rich phase: ${\beta}$-Ti). The sintered Ti-42wt%Nb alloy with milled powder showed higher hardness. The microstructure of the as quenched specimens fabricated by sintering using mixed and milled powder almost are same, but the hardness of as quenched specimen fabricated by using mixed powder increased due to solution hardening of Nb in Ti matrix. The aging effect of these specimens on microstructural change and hardening is not prominent.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.171-171
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• 2009

The electrodes are usually made of a porous mixture of carbon-supported platinum and ionomers. $SnO_2$ particles provide as supports that have been used for DMFCs, and it have high catalytic activities toward methanol oxidation. The main advantage of $SnO_2$ supported electrodes is that it has strong chemical interactions with metallic components. The high activity to a synergistic bifunctional mechanism in which Pt provides the adsorption sites for CO, while oxygen adsorbs dissociative on $SnO_2$. The reaction between the adsorbed species occurs at the Pt/$SnO_2$ boundary. The morphological observations were characterized by FESEM and transmission electron microscopy (TEM). $SnO_2$ particles crystallinity was analyzed by the X-ray diffraction (XRD). The surface bonded state of the $SnO_2$ particles and electrode materials were observed by the X-ray photoelectron spectroscopy (XPS). The electric properties of the Pt/$SnO_2$ catalyst for methanol oxidation have been investigated by the cyclic voltametry (CV) in 0.1M $H_2SO_4$ and 0.1M MeOH aqueous solution. The peak current density of methanol oxidation was increased as the $SnO_2$ content in the anode catalysts increased. Pt/$SnO_2$ catalysts improve the removal of CO ads species formed on the platinum surface during methanol electro-oxidation.

• Journal of the Korea Institute of Military Science and Technology
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• v.7 no.2 s.17
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• pp.81-87
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• 2004

Semiconductor thick film gas sensors based on tin oxide are fabricated and their gas response characteristics are examined for four simulant gases of chemical warfare agent (CWA)s. The sensing materials are prepared in three different sets. 1) The Pt or Pd $(1,\;2,\;3\;wt.\%)$ as catalyst is impregnated in the base material of $SnO_2$ by impregnation method.2) $Al_2O_3\;(0,\;4,\;12,\;20\;wt.\%),\;In_2O_3\;(1,\;2,\;3\;wt.\%),\;WO_3\;(1,\;2,\;3\;wt.\%),\;TiO_2\;(3,\;5,\;10\;wt.\%)$ or $SiO_2\;(3,\;5,\;10\;wt.\%)$ is added to $SnO_2$ by physical ball milling process. 3) ZnO $(1,\;2,\;3,\;4,\;5\;wt.\%)$ or $ZrO_2\;(1,\;3,\;5\;wt.\%)$ is added to $SnO_2$ by co-precipitation method. Surface morphology, particle size, and specific surface area of fabricated sensing films are performed by the SEM, XRD and BET respectively. Response characteristics are examined for simulant gases with temperature in the range 200 to $400^{\circ}C$, with different gas concentrations. These sensors have high sensitivities more than $50\%$ at 500ppb concentration for test gases and also have shown good repetition tests. Four sensing materials are selected with good sensitivity and stability and are fabricated as a sensor array A sensor array Identities among the four simulant gases through the principal component analysis (PCA). High sensitivity is acquired by using the semiconductor thick film gas sensors and four CWA gases are classified by using a sensor array through PCA.