• Journal of Magnetics
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• 제9권2호
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• pp.60-64
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• 2004

In this paper calculations of magnetisation and magnetoresistance characteristics of the Spin Valve (SV) and Pseudo Spin Valve (PSV) spintronics structures are reported and compared with the experimental data. The magnetisation reversal process was analysed with respect to the Stoner- Wohlfahrt model of total surface energy in terms of uniaxial anisotropy, exchange coupling between ferromagnetic layers, unidirectional exchange anisotropy of pinned layer (modelled by exchange coupling between magnetisation of pinned layer and net magnetisation of antiferromagnetic layer with high anisotropy). The numerical simulation of the model to the experimental magnetisation data yielded the above parameters for SV and PSV structures. These parameters were used to more sophistically micromagnetic modelling tool originating from the project called Object Oriented Micromagnetic Framework. Influence of the shape anisotropy of the Magnetic Tunnelling Junction cell used in MRAM was simulated by means of micromagnetic simulations. Results were compared to those obtained from the spot Kerr measurements.

• The Plant Pathology Journal
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• 제21권3호
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• pp.283-287
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• 2005

Since the discovery of generation of $O_2^-$ in plant, many evidence for the oxidative burst (OXB) has been accumulated in various combinations of plant and pathogen or elicitor systems. $O_2^-$ generating system responsible for the OXB was coupled with oxidation of reduced nicotinamide adenine dinucleotide phosphate (NADPH) in microsomal fraction isolated from sliced aged potato tuber slices which were treated by hyphal wall components elicitor from Phytophthora infestans (HWC). We developed new assay method for quantitative measurement of oxygen radical $O_2^-$ by using electron spin resonance (ESR) analysis during elicitor­induced OXB on the surface of plant tissues. The ESR analysis using an $O_2^-$ trapper, Tiron (1,2-dihydroxy-3,5­benzenedisulfonic acid), provided a convenient assay for detecting only $O_2^-$ during elicitor-induced OXB producing various active oxygen species (AOS) on plant tissue surface. Tiron was oxidized to Tiron semiquinon radical by $O_2^-$. Quantity of the radical signal was measured by specific spectra on ESR spectroscopy. The level of $O_2^-$ was high in from surface of potato tuber tissue treated with hyphal cell wall elicitor (HWC) from Phytophthora infestans. There was no secondary OXB induction by $H_2O_2$ treatment in plant.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.61-64
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• 2000

$^{11}$B NMR measurements have been performed to investigate local electronic structure and 4f spin dynamics for TbNi$_2$B$_2$C single crystal. $^{11}$B NMR spectra show three resonance peaks due to the quadrupolar interaction. Shift and linewidth are huge and strongly temperature-dependent. In addition, both are proportional to magnetic susceptibility, indicating that the hyperfine field at the boron site originates from the 4f spins of Tb. $^{11}$B NMR shift and relaxation rates show high anisotropy for field parallel and perpendicular to the c-axis. Anisotropy of the shift and the relaxation rates suggests that the hyperfine field perpendicular to the c-axis is larger.

• 한국전기전자재료학회논문지
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• 제26권5호
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• pp.410-414
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• 2013

Rapid thermal processing (RTP) abruptly decreases the time required to perform solar cell processes. RTP were used to form emitter of crystalline silicon solar cells. The emitter sheet resistance is studied as a function of time and temperature. The objective of this study is reduction of doping process time with same performance. Emitter difRapid thermal dfusion was carried out by using a spin on doping and a RTP. iffusion was performed in the temperature range of $700{\sim}750^{\circ}C$ for 1m 30s~15 m. Thermal budgets yielded a $50{\Omega}/sq$ emitter using a P509 source. To reduce process time and get high efficiency, rapid thermal diffusion by IR lamp was employed in air atmosphere at $700^{\circ}C$ for 15 m.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.918-920
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• 1999

Recently, the ceramics of high permittivity are applied to DRAM and FRAM. In this study, (Ba, Sr)$TiO_3$ (BST) ceramics thin films were prepared by Sol-Gel method. BST solution was made and spin-coated on Pt/$SiO_2$/Si substrate at 4000[rpm] for 10 seconds. Coating process was repeated 3 times and then sintered at $750[^{\circ}C]$ for 30 minutes. Each specimen was analyzed structure and electrical characteristics. Thickness of BST ceramics thin films are about $2000[\AA]$. Dielectric constant and loss of thin films was little decreased at $1[kHz]{\sim}1[MHz]$. Dielectric constant and loss to frequency were 250 and 0.02 in BST3. In accordance with applied voltage, property of leakage current was stability when the was $0{\sim}3$[V]. According to voltage, leakage current was increased exponentially at $4{\sim}7$[V].

• Journal of Magnetics
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• 제8권2호
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• pp.98-102
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• 2003

Microstructure and magnetic transport phenomina in rf sputtered AIN/CO type ten- layered discontinuous films of nanoscaled [AIN(3 nm)/Co(t nm)]…$_10$ with t$_Co$=1.0∼2.0 nm have been investigated. The microstructure and tunneling magnetic resistance of the samples are strongly dependent on the thickness of Co layer, Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1.2 nm, randomly oriented granular Co particles were completely isolated and embedded in amorphous AIN matrix, and the films showed the superparamagnetic behavior with a high MR value of ${\Delta}p/p_0$=1.8%. As t$_Co$ increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. funneling barrier called “decay length far tunneling” fur the films haying the thickness of Co layer from 1.4 to 1.6 nm was measured to be ranged from 0.004 to 0.021 ${\AA}$$^{-1}$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.385-385
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• 2012

A two terminal N+/P/N+ junction device to replace the conventional selective transistor was studied as a bilateral switching device for spin transfer torque (STT) MRAM based on 3D device simulation. An N+/P/N+ junction structure with $30{\times}30nm$ area requires bi-directional current flow enough to write a data by a drain induced barrier lowering (DIBL) under a reverse bias at N+/P (or P/N+ junction), and high current on/off ratio of 106. The SiGe materials are widely used in hetero-junction bipolar transistors, bipolar compensation metal-oxide semiconductors (BiCMOS) since the band gap of SiGe materials can be controlled by changing the fraction and the strain epilayers, and the drift mobility is increased with the increasing Ge content. In this work, N+/P/N+ SiGe material based junction provides that drive current is increased from 40 to $130{\mu}A$ by increased Ge content from 10~80%. When Ge content is about 20%, the drive current density of SiGe device substantially increased to 2~3 times better than Si-based junction device in case of 28 nm P length, which is sufficient current to operation of STT-MRAM.

• 한국세라믹학회지
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• 제34권8호
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• pp.897-907
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• 1997

Thin films of Bi4-xSmxTi3O12(0$\leq$x$\leq$2) were prepared on Pt/Ti/SiO2/Si(100) at $700^{\circ}C$ using spin-coating with sols derived from Bi-Sm-Ti complex alkoxides. From X-ray diffraction analysis, it was observed that Sm-substituted phases resembled ferroelectric Bi4Ti3O12 in structure. Variations of their lattice parameters depending on the amount of Sm-substitution showed that an anomalous structural distortion might exist at x=1. The grain sizes of the thin films decreased from 0.115 ${\mu}{\textrm}{m}$ to 0.078${\mu}{\textrm}{m}$ with increasing the amount of Sm-substitution. The dielectric constants and the remanent polarizations of the thin films decreased with increasing the amount of the Sm-substitution, which were related to decrease of the stereo-active Bi3+ ion contributing to polarization. However, these values were exceptionally high at x=1, compared to those of the other substituted phases. Such an anomaly suggests that the phase of x=1 has 1:1 chemical ordering between Sm and Bi in structure. The thin films of all compositions except x=2 showed ferroelectricity. The thin film of x=2 was paraelectric, whose grains were too fine to exhibit ferroelectricity.

• Bulletin of the Korean Chemical Society
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• 제34권4호
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• pp.1188-1194
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• 2013

Transparent $TiO_2$ thin films have been prepared by sol-gel spin coating method. The sols used for deposition of thin films were prepared with different ethanol content. The effect of ethanol (solvent) concentration and annealing temperature on the performance of $TiO_2$ thin film solar cells has been studied. The results indicate that the as deposited films are amorphous in nature. $TiO_2$ thin films annealed at temperatures above $350^{\circ}C$ exhibited crystalline nature with anatase phase. The results also indicated that the crystallinity of the films improved with increase of annealing temperature. The high resolution transmission electron microscope images showed lattice fringes corresponding to the anatase phase of $TiO_2$. The band gap of the deposited films has been found to decrease with increase in annealing temperature and increase with increase in ethanol concentration. The dependents of photovoltaic efficiency of the dye-sensitized $TiO_2$ thin film solar cells (DSSCs) with the amount of ethanol used to prepare thin films was determined from photocurrent-voltage curves.

• 전자공학회논문지SC
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• 제44권4호통권316호
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• pp.35-41
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• 2007

본 논문에서는 한 바퀴로 구동하는 로봇 GYROBO을 제작하고 하드웨어를 구현하였다. 한 바퀴로 구동하는 로봇은 디스크와 같은 모양이고 자이로 움직임에 의해 균형을 잡는다. GYROBO는 스핀 모터, 기울기 모터, 그리고 드라이브 모터 등 3개의 구동기로 구성되어 있다. 스핀 모터는 고속으로 플라이휠을 구동하여 로봇이 균형을 잡을 수 있도록 한다. 딜트 로터는 자이로 움직임에 따라 로봇의 조향을 조절한다. 드라이브모터는 종방향 움직임을 조정한다. 몇 개의 모델을 디자인하였다. GYROBO의 움직임을 실험을 통해 검증하였다.