• 제목/요약/키워드: High-pressure argon

검색결과 107건 처리시간 0.042초

저탄소 박판 강재의 Nd:YAG 레이저 용접부 형성에 미치는 공정변수의 영향 (Effect of Process Parameters on Bead Formation in Nd:YAG Laser Welding of Thin Steels)

  • 김기철;허재협
    • Journal of Welding and Joining
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    • 제19권3호
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    • pp.317-324
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    • 2001
  • This study deals with high power Nd:YAG laser welding of thin steels for small pressure vessels. Full penetration welding at the overlap joint was performed so as to assure sufficient weld strength. Results showed that mid-depth weld size reduced drastically with increasing the travel speed. Position of focus had little effect on the bead formation even though short focal system was used. However, the shape factor and the bead width had closely related with the position of focus. Based on the microstructural inspection, acceptable weld was obtained when the overlap clearance was controlled up to 20% of the base metal thickness. In the case that the joint contained more clearance than the critical value, both the tensile shear strength and the tear strength were reduced. Results also demonstrated that shielding gases were proved to play a key role as far as the bead formation characteristics was taken into consideration. Blowing dry air through 5mm in diameter nozzle produced narrower bead cross-section than that of argon or nitrogen shielding.

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13.56MHz ICP에서 단일 탐침법에 의한 Ar, Ne 가스의 발광특성 연구 (A Study on Emission Characteristics of Ar, Ne Gas Using a Single Langmuir Probe Method in Radio-Frequency Inductively Coupled Plasma)

  • 조주웅;최용성;김용갑;박대희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.167-170
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    • 2004
  • In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an Argon, Ne discharge for pressure from 1 [mTorr] and input RF power 10 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

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RF-Sputted Vanadium Oxide Thin Films:Effect of Oxygen Partial Pressure on Structural and Electrochemical Properties

  • 박용준;박남규;류광선;장순호;박신종;윤선미;김동국
    • Bulletin of the Korean Chemical Society
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    • 제22권9호
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    • pp.1015-1018
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    • 2001
  • Vanadium oxide thin films with thickness of about 2000 $\AA$ have been prepared by radio frequency sputter deposition using a V2O5 target in a mixed argon and oxygen atmosphere with different Ar/O2 ratio ranging from 99/1 to 90/10. X-ray diffraction and X-ray absorption near edge structure spectroscopic studies show that the oxygen content higher than 5% crystallizes a stoichiometric V2O5 phase, while oxygen deficient phase is formed in the lower oxygen content. The oxygen content in the mixed Ar + O2 has a significant influence on electrochemical lithium insertion/deinsertion property. The discharge-charge capacity of vanadium oxide film increases with increasing the reactive oxygen content. The V2O5 film deposited at the Ar/O2 ratio of 90/10 exhibits high discharge capacity of 100 ${\mu}Ah/cm2-{\mu}m$ along with good cycle performance.

에탄올 점화 과정에 관한 충격관 실험 및 모델 연구 (Shock Tube and Modeling Study of Ethanol Ignition)

  • 신권수;박기수;권은숙
    • 대한화학회지
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    • 제48권1호
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    • pp.12-16
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    • 2004
  • 에탄올-산소-아르곤 혼합기체의 점화 과정을 반사 충격파를 이용 1281-1625 K의 온도 범위 및 0.69-1.06 bar 압력 범위에서 고찰하였다. 점화지연시간은 급격한 압력변화와 광 방출 스펙트럼으로부터 측정하였으며, 에탄올 및 산소 기체의 농도 그리고 반응온도에 따른 점화지연시간의 의존관계를 나타내는 실험식을 구할 수 있었다. 실험결과 에탄올 점화 과정에서 연료인 에탄올의 농도가 커지면 점화지연시간이 길어지는 경향을 보였으며, 이는 메탄올 점화 과정에서 메탄올의 농도가 증가하면 점화 과정이 짧아지는 것과는 다른 경향이었다. 그리고 에탄올 점화 과정에 관하여 보다 자세히 고찰하기 위해 다양한 에탄올 연소반응 메카니즘을 이용하여 모델 연구를 수행하였다.

Optical Characteristics of Oxygen-doped ZnTe Thin Films Deposited by Magnetron Sputtering Method

  • Kim, Seon-Pil;Pak, Sang-Woo;Kim, Eun-Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.253-253
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    • 2011
  • ZnTe semiconductor is very attractive a material for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. The optoelectronic properties of ZnTe:O film allow to expect a large optical gain in the intermediate emission band, which emission band lies about 0.4-0.6 eV below the conduction band of ZnTe [2]. So, the ZnTe system is useful for the production of high-efficiency multi-junction solar cells [2,3]. In this work, the ZnTe:O thin films were deposited on Al2O3 substrates by using the radio frequency magnetron sputtering system. Three sets of samples were prepared using argon and oxygen as the sputtering gas. The deposition chamber was pre-pumped down to a base pressure of 10-7 Torr before introducing gas. The deposition pressure was fixed at 10-3 Torr throughout this work. During the ZnTe deposition, the substrate temperature was 300 oC. The optical properties were also investigated by using the ultraviolte-visible (UV-Vis) spectrophotometer.

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Structural and Optical Properties of HfO2 Films on Sapphire Annealed in O2 Ambient

  • Park, Jong-Chan;Yoon, Yung-Sup;Kang, Seong-Jun
    • 한국세라믹학회지
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    • 제53권5호
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    • pp.563-567
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    • 2016
  • The structural properties of $HfO_2$ films could be improved by thermal treatment owing to their crystallization. We deposited $HfO_2$ films on sapphire by radio frequency (RF) magnetron sputtering, whose base vacuum pressure was lower than $4.5{\times}10^{-6}$ Pa, RF power was 100 W, working temperature was $200^{\circ}C$, working pressure was 3 mTorr, and the density of the active gas (Argon) was 20 sccm. After depositing the $HfO_2$ films, the samples were thermally treated by rapid thermal annealing (RTA) in $O_2$ ambient at different temperatures. Subsequently, the measured physical properties (structural, morphological, and optical) indicated that the crystallite size, refractive index at a wavelength of 632 nm, and packing density increased with rising temperatures. In particular, an $HfO_2$ film thermally treated at $800^{\circ}C$ in $O_2$ ambient had the highest refractive index of 2.0237 and packing density of 0.9638. The relation between optical and structural properties was also analyzed.

저압 및 대기압 플라즈마 처리를 통한 폴리카보네이트의 접촉각 변화특성 비교 (Effects of Low Pressure and Atmospheric Pressure Plasma Treatment on Contact Angle of Polycarbonate Surface)

  • 원동수;김태경;이원규
    • 공업화학
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    • 제21권1호
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    • pp.98-103
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    • 2010
  • 저압 플라즈마와 대기압 플라즈마를 사용하여 폴리카보네이트를 처리한 후 표면 개질 효과를 접촉각 측정을 통하여 비교 분석하였다. 플라즈마 처리 전의 폴리카보네이트의 탈이온수의 접촉각은 $82.31^{\circ}$이었으나 플라즈마 처리 후의 최소 접촉각은 산소 분위기의 저압 플라즈마에서 $9.17^{\circ}$의 최소 접촉각을 얻을 수 있었다. 플라즈마 방전 전력과 반응기체의 유량 증가에 따른 접촉각의 변화는 크지 않았으나 지속적으로 감소하는 특성을 보였다. 플라즈마 처리 후 경과시간에 따라 접촉각의 증가 현상을 보여 플라즈마 처리 후 후속 공정은 가급적 빨리 진행하는 것이 표면에너지 증가에 따른 효과를 이용하는데 효율적이다. 표면 화학결합 분석에서 산소분위기의 플라즈마 처리는 표면에 상대적으로 많은 극성 작용기를 형성하였다. 전반적으로 폴리카보네이트의 표면 개질에서 저압 산소플라즈마를 사용하여 처리하는 것이 대기압 플라즈마보다 효과적으로 친수성 표면을 만들 수 있었다.

양축 정렬된 니켈기판의 표면 산화반응 연구 (A Study on the Surface Oxidation Behavior of Cube-textured Nickel Substrate)

  • 안지현;김병주;김재근;김호진;홍계원;이희균;유재무
    • Progress in Superconductivity
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    • 제7권1호
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    • pp.58-63
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    • 2005
  • We investigated the surface oxidation behavior of cube-textured polycrystalline nickel at various oxidation conditions. Cube-textured NiO film was formed on a cube-textured polycrystalline nickel regardless of oxidation conditions but different growth behavior of NiO crystals was observed depending on the oxidation conditions. The introduction of water vapor into $O_2$ did not affect the texture evolution, but rough and porous microstructure was developed. Microstructure of NiO film tends to be denser as the oxygen partial pressure increases. It is interesting that (111) peak of theta - two theta diffraction pattern started to get stronger in air atmosphere and (111) plane became the major texture in the substrate oxidized in high purity argon gas. Small amount of high index crystallographic plane NiO peak crystal was observed when $N_{2}O$ was used as an oxidant while only (200) plane crystal was formed in dry $O_2$ atmosphere. Flat and smooth surface was changed into rough faceted one when ramping rate to oxidation temperature was faster. The grain size of NiO was decreased when the oxygen partial pressure was low. It was also observed that the modification of nickel surface suppressed the development of (200) texture.

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진공조의 잔류산소가 입방정질화붕소 박막 합성에 미치는 영향 (Effect of Residual Oxygen in a Vacuum Chamber on the Deposition of Cubic Boron Nitride Thin Film)

  • 오승근;김영만
    • 한국표면공학회지
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    • 제46권4호
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    • pp.139-144
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    • 2013
  • c-BN(cubic boron nitride) is known to have extremely high hardness next to diamond, as well as very high thermal and chemical stability. The c-BN in the form of film is useful for wear resistant coatings where the application of diamond film is restricted. However, there is less practical application because of difficult control of processing variables for synthesis of c-BN film as well as unclear mechanism on formation of c-BN. Therefore, in the present study, the structural characterization of c-BN thin film were investigated using $B_4C$ target in r.f. magnetron sputtering system as a function of processing variables. c-BN films were coated on Si(100) substrate using $B_4C$ (99.5% purity). The mixture of nitrogen and argon was used for carrier gas. The deposition processing conditions were changed with substrate bias voltage, substrate temperature and base pressure. Fourier transform infrared microscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS) were used to analyze crystal structures and chemical binding energy of the films. In the case of the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V~ -600 V. Less c-BN fraction was observed as deposition temperature increased and more c-BN fraction was observed as base pressure increased.

원자로 해체를 위한 수중 아크 금속 절단기술에 대한 연구 (A Study on Contact Arc Metal Cutting for Dismantling of Reactor Pressure Vessel)

  • 김찬규;문도영;문일우;조영태
    • 한국기계가공학회지
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    • 제21권1호
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    • pp.22-27
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    • 2022
  • In accordance with the growing trend of decommissioning nuclear facilities, research on the cutting process is actively proceeding worldwide. In general, a thermal cutting process, such as plasma cutting is applied to decommissioning a nuclear reactor pressure vessel (RPV). Plasma cutting has the advantage of removing the radioactive materials and being able to cut thick materials. However, when operating under water, the molten metal remains in the cut plane and re-solidifies. Hence, cutting is not entirely accomplished. For these environmental reasons, it is difficult to cut thick metal. The contact arc metal cutting (CAMC) process can be used to cut thick metal under water. CAMC is a process that cuts metal using a plate-shaped electrode based on a high-current arc plasma heat source. During the cutting process, high-pressure water is sprayed from the electrode to remove the molten metal, known as rinsing. As the CAMC is conducted without using a shielding gas, such as Argon, the electrode is consumed during the process. In this study, CAMC is introduced as a method for dismantling nuclear vessels and the relationship between the metal removal and electrode consumption is investigated according to the cutting conditions.