• Title/Summary/Keyword: High-mailler-index Si surfce

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Reconstruction Change of Si(5 5 12) Induced by Selective Bi Adsorption (Bi의 선택적 흡착으로 유도된 Si(5 5 12) 표면의 재구조변화)

  • Cho Sang-Hee;Seo Jae-M.
    • Journal of the Korean Vacuum Society
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    • v.15 no.2
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    • pp.152-161
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    • 2006
  • In order to test the capacity of Si(5 5 12) as a potential template for nanowire fabrication, Bi/Si(5 5 12) system has been studied by STM. With Bi deposition, Si(5 5 12) has been transformed to Si(3 3 7) terrace. Initially Bi atoms selectively replace Si-dimers and Si-adatoms with Bi-dimers and Bi-adatoms, respectively. With extended Bi adsorption, Bi-dimers adsorb on the pre-adsorbed Bi-dimers and Bi-atoms. These dimers in the second layer form Bi-dimer pairs having relatively stable $p^3$ bonding, Finally, the Bi-dimer adsorbs on the Bi-dimers in the second layer and saturates. It can be deduced that both surface transformation to (3 3 7) and site-selective Bi adsorption are possible due to substrate-strain relaxation through inserting Bi atoms into subsurface of Si substrate.