• Title/Summary/Keyword: High vacuum pressure

Search Result 639, Processing Time 0.034 seconds

Electrical and Optical Properties of CdS Thin Films Deposited by CSVT Method (CSVT법으로 제조된 CdS박막의 전기적 및 광학적 특성)

  • Park, Ki-Cheol;Shim, Ho-Seob
    • Journal of Sensor Science and Technology
    • /
    • v.6 no.5
    • /
    • pp.414-422
    • /
    • 1997
  • CdS thin films with low resistivity and adequate transmittance in the visible region for the window of CdS/CdTe hetero junction solar cel1 were prepared by close spaced vapor transport(CSVT) method. The electrical and optical properties of the CdS thin films were investigated in terms of the deposition conditions, such as the substrate temperature, the working pressure, and the source temperature. The substrate temperature, the working pressure, and the source temperature for the optimum deposition of the CdS thin films were $300^{\circ}C$, 100mTorr, and $730^{\circ}C$, respectively. The resistivity and the transmittance of the CdS thin films deposited under this condition were about $7.21{\times}10^{3}{\Omega}cm$ and over 65%, respectively. The crystallinity, the resistivity, and optical band gap were improved greatly compared to the CdS thin films deposited by general high vacuum evaporation.

  • PDF

The study of plasma source ion implantation process for ultra shallow junctions (Ulra shallow Junctions을 위한 플라즈마 이온주입 공정 연구)

  • Lee, S.W.;Jeong, J.Y.;Park, C.S.;Hwang, I.W.;Kim, J.H.;Ji, J.Y.;Choi, J.Y.;Lee, Y.J.;Han, S.H.;Kim, K.M.;Lee, W.J.;Rha, S.K.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.06a
    • /
    • pp.111-111
    • /
    • 2007
  • Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.

  • PDF

Development of New Micro Pattern Fabrication Process by U sing Isostatic Pressing (정수압을 이용한 미세 패턴 전사 신공정 개발)

  • Seol, J.W.;Joo, B.Y.;Rhim, S.H.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
    • /
    • 2009.10a
    • /
    • pp.267-270
    • /
    • 2009
  • In the present investigation, we are newly developing a new forming process which can fabricate micro patterns on large-area polymeric substrates for high speed mass production. The key idea of the new process is to pressurize multiple vacuum-packed substrate-mold stacks above the glass transition temperature ($T_g$) of the polymeric substrates. The new process is thought to be promising micro-pattern fabrication technique in three aspects; firstly, isostatic pressing ensures the uniform micro-pattern replicating condition regardless of the substrate area. Secondly, the control of forming condition such as temperature and pressure can realize well-defined process condition exploited in the conventional hot embossing research field. Thirdly, multiple substrates can be patterned at the same time. A prototype forming machine for the new process was developed with the design consideration realizing the present idea. With a developed machine, micro prismatic array patterns with 50 um in size were successfully made on the $380{\times}300{\times}6\;mm$ PMMA plate.

  • PDF

Structural Analysis and Failure Prediction of Tape-Wrapped Structures (테이프래핑 구조물의 구조 해석 및 파단 예측)

  • Goo, Nam-Seo;Park, Hoon-Cheol;Yoon, Kwang-Joon;Lee, Yeol-Hwa
    • Journal of the Korean Society for Aeronautical & Space Sciences
    • /
    • v.32 no.3
    • /
    • pp.17-21
    • /
    • 2004
  • Tape-wrapped structures have been generally used in nozzle parts of guided missiles. A continuous band of woven composite material is wrapped around a mandrel that is designed to produce real products. After going through a vacuum bagging process, this woven composite material is cured in a high-pressure autoclave or hydroclave. However, tape-wrapped structures are difficult to analyze because of its large thickness and inclined lay-up. The present study investigates the method of analysis and failure prediction of tape-wrapped structures. The four-point bending test and its finite element analysis were performed to study how to model tape-wrapped structures and investigate their failure characteristics.

Interface Charateristics of Plasma co-Polymerized Insulating Film/Pentacene Semiconductor Film (플라즈마 공중합 고분자 절연막과 펜타센 반도체막의 계면특성)

  • Shin, Paik-Kyun;Lim, H.C.;Yuk, J.H.;Park, J.K.;Jo, G.S.;Nam, K.Y.;Park, J.K.;Kim, Y.W.;Chung, M.Y.
    • Proceedings of the KIEE Conference
    • /
    • 2009.07a
    • /
    • pp.1349_1350
    • /
    • 2009
  • Thin films of pp(ST-Co-VA) were fabricated by plasma deposition polymerization (PVDPM) technique. Properties of the plasma polymerized pp(ST-Co-VA) thin films were investigated for application to semiconductor device as insulator. Thickness, dielectric property, composition of the pp(ST-Co-VA) thin films were investigated considering the relationship with preparation condition such as gas pressure and deposition time. In order to verify the possibility of application to organic thin film transistor, a pentacene thin film was deposited on the pp(ST-Co-VA) insulator by vacuum thermal evaporation technique. Crystalline property of the pentacene thin film was investigated by XRD and SEM, FT-IR. Surface properties at the pp(ST-Co-VA)/pentacene interface was investigated by contact angle measurement. The pp(ST-Co-VA) thin film showed a high-k (k=4.6) and good interface characteristic with pentacene semiconducting layer, which indicates that it would be a promising material for organic thin film transistor (OTFT) application.

  • PDF

A Study on the Development of the Automatic Performance-Test-Bench for Drag Torque (드래그 토오크의 자동 성능시험기 개발에 관한 연구)

  • Lee, Seong-Ho;Mok, Hak-Soo
    • Transactions of the Korean Society of Automotive Engineers
    • /
    • v.16 no.1
    • /
    • pp.166-174
    • /
    • 2008
  • Recently, the automotive industry has been developing rapidly. With the progress parts of the automobile components need high quality and the reliability. Among them, braking unit is essential device, and acquire the reliability through the performance test of brake. This study was aimed to design the performance-test-bench to measure the drag torque which has effect on caliper in braking unit. In this progressive technology, it is vital importance to use hydraulic and pneumatic, and to combine test bench with instrumentation engineering technology. This system to construct the design of hydraulic and pneumatic circuit, interface technique between sensors and personal computer, data acquisition and display design, and integrated control are very important technology. Moreover, reliable data are obtained through vacuum system and hydraulic and pneumatic system by using of booster and brake master cylinder which are actually applied to automobile. Then, data signal detector sensors for speed, pressure and torque is attached on this system. Therefore, in this study, we designed a performance-test-bench by and we also made an total control system using personal computer which is more progressive and flexible method than existing PLC control.

Performance Characteristics of Secondary Throat Supersonic Exhaust Diffusers (2차목 초음속 디퓨저의 주요 설계 변수에 따른 성능 특성)

  • Park, Jin-Ho;Jeon, Jun-Su;Yu, I-Sang;Ko, Young-Sung;Kim, Sun-Jin;Kim, Yoo;Han, Yeoung-Min
    • Proceedings of the Korean Society of Propulsion Engineers Conference
    • /
    • 2011.11a
    • /
    • pp.641-644
    • /
    • 2011
  • The performance tests of secondary throat supersonic exhaust diffusers were carried out by using scaled down model and gas nitrogen. It was performed to find the performance characteristics according to diffuser inlet length(Ld), secondary throat length(Lst), divergence length(Ls). There was few change by diffuser inlet length(Ld), but starting pressures of the diffusers were effected by secondary throat length(Lst), divergence length(Ls). It was confirmed that starting pressure was not changed over 8 Lst/Dst.

  • PDF

A Study on Heat and Mass Transfer Characteristics of LiBr-$H_2$O Solution with a Sufactant Flowing over a Cooled Horizontal Tube (계면활성제 첨가시 수평 냉각관 외부를 흘러내리는 LiBr수용액의 열 및 물질전달 특성에 관한 연구)

  • 김경희;설신수;이상용
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
    • /
    • v.14 no.4
    • /
    • pp.341-349
    • /
    • 2002
  • Heat and mass transfer characteristics of a surfactant-added LiBr-$H_2O$ solution flowing over a single horizontal tube were examined experimentally. The parameters considered were surfactant (2-ethyl-1-hexanol) concentration, solution temperature at the top of the tube and absorber pressure. Even with an amount of the surfactant below the solubility limit, heat and mass transfer performances were enhanced tremendously. The Nusselt and Sherwood numbers increased by about 70% and 340%, respectively, when 10 ppm of the surfactant was added. However, an excess amount of the surfactant in the solution did not bring a further enhancement. The absorption performance deteriorated when the non-condensable gases were extracted from the system (by a vacuum pump) since the vaporized surfactant was also extracted during the process. Therefore, it is desirable to add a sufficient amount of the surfactant (more than 10 ppm) to maintain high performance of absorption.

ADHESION PHENOMENON AND ITS APPLICATION TO MANIPULATION FOR MICRO-ASSEBMLY

  • Takahashi, Kunio;Himeno, Hideo;Saito, Shigeki;Onzawa, Tadao
    • Proceedings of the KWS Conference
    • /
    • 2002.10a
    • /
    • pp.781-784
    • /
    • 2002
  • Adhesion phenomenon is more significant for smaller objects, because adhesional force is proportional to size of the objects while gravitational force is proportional to the third power of it. For the purpose of microassembly, theoretical understanding is required for the Adhesion phenomenon. Authors have developed a force measurement system in an ultra-high vacuum chamber of Auger electron spectroscopy. The force between arbitrary combination of materials can be measured at a pressure less than 100 nPa after and before Ar ion sputtering and chemical analysis for several atomic layers of the surface. The results are successfully interpreted with a theory of contact mechanics. Since surface energy is quite important in the interpretation, electronic theory is used to evaluate the surface energy. In the manipulation of small objects, the adhesional force is always attractive. Repulsive force is essential for the manipulation. It can be generated by Coulomb interaction. The voltage required for detachment is theoretically analyzed and the effect of boundary conditions on the detachment is obtained. The possibility and limitations of micro-manipulation using both the adhesion phenomenon and Coulomb interaction are theoretically clarified. Its applicability to nano-technology is found to be expected.

  • PDF

The effects of buffer layer using $\alpha$-septithiophene on the organic light emitting diode (유기 전기 발광 소자에서 $\alpha$-septithiophene을 이용한 buffer layer의 영향)

  • Yi, Ki-Wook;Lim, Sung-Taek;Shin, Dong-Myung;Park, Jong-Wook;Park, Ho-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2002.04b
    • /
    • pp.53-56
    • /
    • 2002
  • The effect of $\alpha$-septithiophene (${\alpha}-7T$) layers on the organic light emitting diode(OLED) was studied. The ${\alpha}-7T$ was used for a buffer layer in OLED. Hole injection was investigated and improved emission efficiency. The OLEDs structure can be described as indium tin oxide(ITO)/ buffer layer / hole transporting layer / emitting layer / electron transporting layer / LiF / Al. The hole transporting layer were composed of N,N-diphenyl-N,N-di(3-methylphenyl)-1,1-biphenyl-4,4-diamine(TPD), and N,N-di(naphthalene-1-ly)-N,N-diphenyl-benzidine( ${\alpha}$-NPD). The emitting layer, and electron transporting layer consist of tris(8-hydroxyquinolinato) aluminum($Alq_3$). All organic layer were deposited at a background pressure of less than $10^{-6}$ torr using ultra high vacuum (UHV) system. The ${\alpha}-7T$ layer can substitute the hole blocking layer, and improve hole injection properties.

  • PDF