• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.5-6
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• 2002

The new spectrometer for X-ray Induced Electron Emission Spectroscopy (XIEES) .has been recently developed in KRISS in collaboration with PTI (Russia). The spectrometer allows to perform research using the XAFS, SXAFS, XANES techniques (D.C.Koningsberger and R.Prins, 1988) as well as the number of techniques from XIEES field(L.A.Bakaleinikov et all, 1992). The experiments may be carried out with registration of transmitted through the sample x-rays (to investigate bulk samples) or/and total electron yield (TEY) from the sample surface that gives the high (down to several atomic mono-layers in soft x-ray region) near surface sensitivity. The combination of these methods together give the possibility to obtain a quantitative information on elemental composition, chemical state, atomic structure for powder samples and solids, including non-crystalline materials (the long range order is not required). The optical design of spectrometer is made according to Johannesson true focusing schematics and presented on the Fig.1. Five stepping motors are used to maintain the focusing condition during the photon energy scan (crystal angle, crystal position along rail, sample goniometer rail angle, sample goniometer position along rail and sample goniometer angle relatively of rail). All movements can be done independently and simultaneously that speeds up the setting of photon energy and allows the using of crystals with different Rowland radil. At present six curved crystals with different d-values and one flat synthetic multilayer are installed on revolver-type monochromator. This arrangement allows the wide range of x-rays from 100 eV up to 25 keV to be obtained. Another 4 stepping motors set exit slit width, sample angle, channeltron position and x-ray detector position. The differential pumping allows to unite vacuum chambers of spectrometer and x-ray generator avoiding the absorption of soft x-rays on Be foil of a window and in atmosphere. Another feature of vacuum system is separation of walls of vacuum chamber (which are deformed by the atmospheric pressure) from optical elements of spectrometer. This warrantees that the optical elements are precisely positioned. The detecting system of the spectrometer consists of two proportional counters, one scintillating detector and one channeltron detector. First proportional counter can be used as I/sub 0/-detector in transmission mode or by measuring the fluorescence from exit slit edge. The last installation can be used to measure the reference data (that is necessary in XANES measurements), in this case the reference sample is installed on slit knife edge. The second proportional counter measures the intensity of x-rays transmitted through the sample. The scintillating detector is used in the same way but on the air for the hard x-rays and for alignment purposes. Total electron yield from the sample is measured by channeltron. The spectrometer is fully controlled by special software that gives the high flexibility and reliability in carrying out of the experiments. Fig.2 and fig.3 present the typical XAFS spectra measured with spectrometer.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.133-140
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• 2009

$Ta_{2}O_{5}$ thin films were deposited by RF magnetron sputtering method under various RF power, substrates and oxygen partial pressure. Elliptic constants were measured by using a phase modulated spectroscopic ellipsometer and analyzed with the Tauc-Lorentz dispersion formula and best fit method in the range of 310$\sim$1239 nm. Also, transmittance spectra of the films were measured by UV -Vis spectrophotometer in the range of 300$\sim$1000 nm. From these data, thickness of $Ta_{2}O_{5}$ and surface layer were analyzed and changes of magnitude and shape of dispersion of optical constants according to fabricated conditions were measured. Also, to evaluate thickness and optical constants data analyzed by Tauc-Lorentz dispersion formula, the measured and analyzed transmittance spectra were compared. In result of the comparison, two spectra were in good agreement each other. Accordingly, it indicates that our ellipsometric analysis is valid.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.408-418
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• 2008

The rectangular resonant cavity was designed and characterized as a microwave plasma source for focused ion beam. The optimum cavity was calculated analytically and analyzed in detail by using HFSS(High Frequency Structure Simulator). Since the resonant cavity can be affected by the permittivity of quartz chamber and plasma, the cavity is designed to be changeable in one direction. By observing the microwave input power at which the breakdown begins, the optimum cavity length for breakdown is measured and compared with the calculated one, showing in good agreement with the optimum length reduced by 10cm according to the permittivity change in the presence of quartz chamber. The shape of breakdown power curve as a function of pressure appears to be similar to Paschen-curve. After breakdown, plasma densities increase with microwave power and the reduced effective permittivity in the cavity with plasma results in larger optimum length. However, it is not possible to optimize the cavity condition for high density plasmas with increased input power, because too high input power causes expansion of density cutoff region where microwave cannot penetrate. For more accurate microwave cavity design to generate high density plasma, plasma column inside and outside the density cutoff region needs to be treated as a conductor or dielectric.

• Textile Coloration and Finishing
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• v.5 no.4
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• pp.29-41
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• 1993

In order to surface Hydrophobilization of Poly(ethylene terephthalate) (PET) fiber samples were treated in the atmosphere of CF$_{4}$ or $C_{2}$F$_{6}$glow discharge. The sample used in this study was PET film which is 75$\mu$m thick made by Teijin, O-Type(Japan). The cleaned samples were placed in plasma reactor made of pyrex glass cylinder, and plasma processing was carried out by glow discharge of CF$_{4}$ or $C_{2}$F$_{6}$ gas, being continuously fed by gas flow and continuously pumped out by a vacuum system. Electric power source for generate plasma state was sustained alternating current(60Hz) and voltage was sustained 600 volt. The duration of plasma treatment varied from 15 to 120 seconds except special case, the monomer gase pressure varied from 0.02 to 0.3 Torr and power range was 10 to 90 watts. The hydrophobic features of changed PET surface were evaluated by contact angle measurement and surface chemical characteristics were analyzed by ESCA. Results can be summerized as follows. 1. The most favorable setting position of substrate was the center area between the two electrodes. 2. $C_{2}$F$_{6}$ discharge current was lower than that of CF$_{4}$ when same voltage was sustained. Treated efficiency between CF$_{4}$ and $C_{2}$F$_{6}$ did not revealed significant differences under same electric power(wattage). 3. When monomer pressure is very low below 0.02 torr, as though substrate is exposed to CF$_{4}$ or $C_{2}$F$_{6}$ plasma, it tend to be hydrophilic through a little of fluorine bond and a great deal of oxidizing reaction. 4. There brought good hydrophobilization when monomer pressure was more 0.1 torr and duration of glow discharge treatment was over 45 seconds. When monomer pressure was too high, discharge current became low. Although prolong the duration, there was no more high hydrophobilization. 5. According to ESCA analysis, there were a little CF bond and a prevailing CF$_{2}$ bond in CF$_{4}$-treated substrate. There were CF$_{3}$, a little CF and a prevailing CF$_{2}$ bond in $C_{2}$F$_{6}$-treated substrate.d substrate.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.483-488
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• 2007

Current feeder system (CFS) for Korea superconducting tokamak advanced research(KSTAR) project plays a role to interconnect magnet power supply (MPS) and superconducting (SC) magnets through the normal bus-bar at the room temperature(300 K) environment and the SC bus-line at the low temperature (4.5 K) environment. It is divided by two systems, i.e., toroidal field system which operates at 35 kA DC currents and poloidal field system wherein 20$\sim$26 kA pulsed currents are applied during 350 s transient time. Aside from the vacuum system of main cryostat, an independent vacuum system was constructed for the CFS in which a roughing system is consisted by a rotary and a mechanical booster pump and a high vacuum system is developed by four cryo-pumps with one dry pump as a backing pump. A self interlock and its control system, and a supervisory interlock and its control system are also established for the operational reliability as well. The entire CFS was completely tested including the reliability of local/supervisory control/interlock, helium gas leakage, vacuum pressure, and so on.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.391-392
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• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.96-96
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• 2016

Nanotechnology mostly employs nano-materials and nano-structures with distinctive properties based on their size, structure, and composition. It is quite difficult to produce nano-materials and nano-structures with identical sizes, structures, and compositions in large quantities, because of spatiotemporal fluctuation of production processes. In other words, fluctuation is the bottleneck in nanotechnology. We propose three strategies to suppress such fluctuations: employing 1) difference between linear and nonlinear phenomena, 2) difference in time constants, and 3) nucleation as a bottleneck phenomenon. We are also developing nano- and micro-scale guided assembly using plasmas as a plasma nanofabrication.1-5) We manipulate nano- and micro-objects using electrostatic, electromagnetic, ion drag, neutral drag, and optical forces. The accuracy of positioning the objects depends on fluctuation of position and energy of an object in plasmas. Here we evaluate such fluctuations and discuss the mechanism behind them. We conducted in-situ evaluation of local plasma potential fluctuation using tracking analysis of fine particles (=objects) in plasmas. Experiments were carried out with a radio frequency low-pressure plasma reactor, where we set two quartz windows at the top and bottom of the reactor. Ar plasmas were generated at 200 Pa by applying 13.56MHz, 450V peak-to-peak voltage. The injected fine particles were monodisperse methyl methacrylate-polymer spheres of $10{\mu}m$ in diameter. Fine particles were injected into the reactor and were suspended around the plasma/sheath boundary near the powered electrode. We observed binary collision of fine particles with a high-speed camera. The frame rate was 1000-10000 fps. Time evolution of their distance from the center of mass was measured by tracking analysis of the two particles. Kinetic energy during the collision was obtained from the result. Potential energy formed between the two particles was deduced by assuming the potential energy plus the kinetic energy is constant. The interaction potential is fluctuated during the collision. Maximum amplitude of the fluctuation is 25eV, and the average is 8eV. The fluctuation can be caused by neutral molecule collisions, ion collisions, and fluctuation of electrostatic force. Among theses possible causes, fluctuation of electrostatic force may be main one, because the fine particle has a large negative charge of -17000e and the corresponding electrostatic force is large compared to other forces.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.231.1-231.1
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• 2015

Surface energy, being an important material parameter to control its interactions with the other surfaces plays a key role in bio-related application. Carbon films are found very promising due to their characteristics such as wear and corrosion resistant, high hardness, inert, low resistivity and biocompatibility. The present work deals with the deposition of carbon films using unbalanced facing target magnetron sputtering technique. The discharge characteristics were studied using optical emission spectroscopy and correlated with the film properties. Surface energy was investigated through contact angle measurement. The ID/IG ratio as calculated from Raman spectroscopy data increases with the increase in power density due to the higher number of sp2 clusters embedded in the amorphous matrix. The deposited films were smooth and homogeneous as observed by Atomic force microscopy having RMS roughness in the range of 1.74 to 2.25 nm. It is observed that electrical resistivity and surface energy varies in direct proportionality with operating pressure and has inverse relation with power density. The surface energy results clearly exhibited that these films can have promising applications in cell cultivation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.688-688
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• 2013

Al-doped ZnO (AZO) thin films have attracted a lot of attention as a cheap transparent conducting oxide (TCO) material that can replace the expensive Sn-doped In2O3. In particular, AZO thin films are widely used as a window layer of chalcogenide-based thin film solar cells such as Cu(In,Ga)Se2 and Cu2ZnSnS4 (CZTS). Mostly important requirements for the window layer material of the thin film solar cells are the high transparency and the low sheet resistance, because they influence the light absorption by the activelayer and the electron collection from the active layer, respectively. In this study, we prepared the AZO thin films by RF magnetron sputtering using a ZnO/Al2O3 (98：2wt%) ceramic target, and the effect of the sputtering condition such as the working pressure, RF power, and the working distance on the optical, electrical, and crystallographic properties of the AZO thin films was investigated. The AZO thin films with optimized properties were used as a window layer of CZTS thin film solar cells. The CZTS active layers were prepared by the electrochemical deposition and the subsequent sulfurization process, which is also one of the cost-effective synthetic approaches. In addition, the solar cell properties of the CZTS thin film solar cells, such as the photocurrent density-voltage (J-V) characteristics and the external quantum efficiency (EQE) were investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)