• 제목/요약/키워드: High temperature plasma

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유도결합형 제논의 가스압력 및 RF전력에 따른 플라즈마의 전기적 특성 (Electrical Properties of Plasma According to Gas Pressure and RF Power of Xe-Inductively Coupled Plasma)

  • 최용성;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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    • pp.43-47
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    • 2006
  • In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma (ICP). As results at several dependences of 20~100mTorr Xenon pressure, the brightness of discharge tube was higher (4,900 $cd/m^2$) than other conditions when Xe pressure was 20mTorr and RF power was 200W. In that case, the electron temperature and density were 3.58eV and $3.56{\times}10^{12}cm^2$, respectively. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

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반도체 플라즈마 식각 장치의 부품 가공 연구 (A Study of Machining Optimization of Parts for Semiconductor Plasma Etcher)

  • 이은영;김문기
    • 반도체디스플레이기술학회지
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    • 제19권4호
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    • pp.28-33
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    • 2020
  • Plasma etching process employs high density plasma to create surface chemistry and physical reactions, by which to remove material. Plasma chamber includes silicon-based materials such as a focus ring and gas distribution plate. Focus ring needs to be replaced after a short period. For this reason, there is a need to find materials resistant to erosion by plasma. The developed chemical vapor deposition processing to produce silicon carbide parts with high purity has also supported its widespread use in the plasma etch process. Silicon carbide maintains mechanical strength at high temperature, it have been use to chamber parts for plasma. Recently, besides the structural aspects of silicon carbide, its electrical conductivity and possibly its enhanced life time under high density plasma with less generation of contamination particles are drawing attention for use in applications such as upper electrode or focus rings, which have been made of silicon for a long time. However, especially for high purity silicon carbide focus ring, which has usually been made by the chemical vapor deposition method, there has been no study about quality improvement. The goal of this study is to reduce surface roughness and depth of damage by diamond tool grit size and tool dressing of diamond tools for precise dimensional assurance of focus rings.

Cutoff Probe를 이용한 자화유도결합 플라즈마의 특성 연구 (A Study on Magnetized Inductively Coupled Plasma Using Cutoff Probe)

  • 손의정;김동현;이호준
    • 전기학회논문지
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    • 제65권10호
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    • pp.1706-1711
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    • 2016
  • Electromagnetic wave simulation was performed to predict characteristics of manufactured cutoff probe at low temperature magnetized plasma medium. Microwave cutoff probe is designed for research the properties of magnetized inductively coupled plasma. It was shown that the cutoff probe method can safely be used for weakly magnetized high density plasma sources. Cutoff probe system with two port network analyzer has been prepared and applied to measure electron density distributions in large area, 13.56MHz driven weakly magnetized inductively coupled plasma source. The results shown that, the plasma frequency confirmed cut-off characteristics in low temperature plasma. Especially, cut-off characteristics was found at upper hybrid resonance frequency in the environment of the magnetic field. In case of a induced weak magnetic field in inductively coupled plasma, plasma density estimated from the cutoff frequency in the same way at unmagnetized plasma due to nearly same plasma frequency and upper hybrid resonance frequency. The plasma density is increased and uniformity is improved by applying a induced weak magnetic field in inductively coupled plasma.

MICOWAVE PLASMA BURNER

  • Hong, Yong-Cheol;Shin, Dong-Hun;Lee, Sang-Ju;Jeon, Hyung-Won;Lho, Taihyeop;Lee, Bong-Ju
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.95-95
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    • 2010
  • An apparatus for generating flames and more particularly the microwave plasma burner for generating high-temperature large-volume plasma flame was presented. The plasma burner was composed of micvrowave transmission lines, a field applicator, discharge tube, coal and gas supply systems, and a reactor. The plasma burner is operated by injecting coal powders into a 2.45 GHz microwave plasma torch and by mixing the resultant gaseous hydrogen and carbon compounds with plasma-forming gas. We in this work used air, oxygen, steam, and their mixtures as a discharge gas or oxidant gas. The microwave plasma torch can instantaneously vaporize and decompose the hydrogen and carbon containing fuels. It was observed that the flame volume of the burner was more than 50 times that of the torch plasma. The preliminary experiments were carried out by measuring the temperature profiles of flames along the radial and axial directions. We also investigated the characteristics for coal combustion and gasification by analyzing the byproducts from the exit of reactor. As expected, various byproducts such as hydrogen, carbon monoxide, carbon dioxide, hydrogen sulfide, etc. were detected. It is expected that such burner cab be applied to coal gasification, hydrocarbon reforming, industrial boiler of power plants, etc.

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Magnetotransport Properties of Co-Fe/Al-O/Co-Fe Tunnel Junctions Oxidized with Microwave Excited Plasma

  • Nishikawa, Kazuhiro;Orata, Satoshi;Shoyama, Toshihiro;Cho, Wan-Sick;Yoon, Tae-Sick;Tsunoda, Masakiyo;Takahashi, Migaku
    • Journal of Magnetics
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    • 제7권3호
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    • pp.63-71
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    • 2002
  • Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

헬리콘 플라즈마원의 특성 (Characterization of a Helicon Plasma Source)

  • 현준원;노승정;김경례;김창연;김현후
    • 한국표면공학회지
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    • 제32권6호
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    • pp.658-664
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    • 1999
  • Helicon sources are attractive for plasma processing because they provide high plasma density in low magnetic fields. Helicon waves were excited by a Nagoya type III antenna in a magnetized plasma column. Plasma parameters were measured with a double probe, and the structure and adsorption of the helicon wave fields were determined with the probes. Argon is fed through a MFC (mass flow controller) for operation pressure of 10~110 mtorr. A 13.56 MHz r.f. power of 50~450 W is induced through the antenna. The plasma density and electron temperature are measured as functions of external magnetic field, r.f. power and pressure. The plasma density as functions of r.f. power and magnetic field at a constant pressure increased linearly, and the electron temperature did not change largely with various operation parameters and the value was around 5~7 eV.

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TiB2-Cu Interpenetrating Phase Composites Produced by Spark-plasma Sintering

  • Kwon, Young-Soon;V. Dudina, Dina;I. Lomovsky, Oleg;A. Korchagin, Michail;Kim, Ji-Soon
    • 한국분말재료학회지
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    • 제10권3호
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    • pp.168-171
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    • 2003
  • Interpenetrating phase composites of $TiB_2$-Cu system were produced via Spark-Plasma Sintering (SPS) oi nanocomposite powders. Under simultaneous action of pressure, temperature and electric current titanium diboride nanoparticles distributed in copper matrix move, agglomerate and form a fine-grained skeleton. Increasing SPS-temperature and he]ding time promote densification due to local melting of copper matrix When copper melting is avoided the compacts contain 17-20% porosity but titanium diboride skeleton is still formed representing the feature of SPS . High degree of densification and formation of titanium diboride network result in increased hardness of high-temperature SPS-compacts.

플라즈마를 이용한 분말형 금속 연료 알루미늄의 점화 특성 (Ignition Characteristics of Aluminum Metal Powder Fuel with Thermal Plasma)

  • 이상협;임지환;윤웅섭
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2011년도 제37회 추계학술대회논문집
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    • pp.737-744
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    • 2011
  • 탄화수소 계열의 점화원과 달리 선행 연구된 스팀 플라즈마 점화기를 이용한 알루미늄 분말의 지속 연소 성공을 바탕으로, 고온의 플라즈마를 이용한 알루미늄 분말의 점화 특성을 알아보기 위해 산화제가 없는 환경을 조성하여 점화 특성 확인 실험을 수행하였다. 아르곤 플라즈마를 이용하여 이전의 연소 실험과 동일한 4500 K의 온도 조건 및 이송 가스를 이용한 입자 공급 조건을 조성하여 실험을 수행하였으며, 플라즈마의 온도는 방출분광법을 사용하여 측정하였고 점화 특성은 SEM 촬영과 EDS 분석을 통해 비교 분석하였다. 고온의 플라즈마 제트 내부를 통과한 알루미늄 분말은 탄화수소 계열의 점화원과 다르게 급격한 기화로 인한 점화 촉진 효과를 확인 할 수 있었다.

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Ion Flux Assisted PECVD of SiON Films Using Plasma Parameters and Their Characterization of High Rate Deposition and Barrier Properties

  • Lee, Joon-S.;Jin, Su-B.;Choi, Yoon-S.;Choi, In-S.;Han, Jeon-G.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.236-236
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    • 2011
  • Silicon oxynitride (SiON) was deposited for gas barrier film on polyethylene terephthalate (PET) using octamethylycyclodisiloxane (Si4O4C8H24, OMCTS) precursor by plasma enhanced chemical vapor deposition (PECVD) at low temperature. The ion flux and substrate temperature were measured by oscilloscope and thermometer. The chemical bonding structure and barrier property of films were characterized by Fourier transform infrared (FT-IR) spectroscopy and the water vapor transmission rate (WVTR), respectively. The deposition rate of films increases with RF bias and nitrogen dilution due to increase of dissociated precursor and nitrogen ion incident to the substrate. In addition, we confirmed that the increase of nitrogen dilution and RF bias reduced WVTR of films. Because, on the basis of FT-IR analysis, the increase of the nitrogen gas flow rate and RF bias caused the increase of the C=N stretching vibration resulting in the decrease of macro and nano defects.

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히터 일체형 하이브리드 단판형 플라즈마 방전소자 (One-Plate Type Hybrid Plasma Discharge Device with Heating Element)

  • 최우진;최은혜;성형석;권진구;이성의
    • 한국전기전자재료학회논문지
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    • 제32권4호
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    • pp.320-326
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    • 2019
  • Recently, the application of atmospheric plasma technology in air filtration is increasing. Sterilization by an atmospheric plasma device is very effective. However, ozone gas, which is generated during atmospheric plasma formation, poses a hazard to human health. To reduce the ozone gas during plasma discharge, we fabricated a one-plate hybrid plasma discharge device with a heating element, which can decompose ozone gas effectively by a simple heating action. In this study, we evaluated the plasma discharge characteristics and ozone concentrations with various Ar flow rates and temperatures. With increasing Ar gas flow rate, the ozone concentration and spectrum intensity increased till an Ar gas flow rate of 60 sccm, and decreased thereafter. When discharged in high temperature, the ozone concentration and spectrum intensity decreased. Further, to evaluate the state of the treated surface under various plasma discharge and heating conditions, we measured the variation in the contact angles on the surface. Regardless of the temperature, the contact angle increased with increasing discharge voltage. However, the contact angle increased when discharged at high temperature.