• Journal of the Korean Ceramic Society
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• v.30 no.12
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• pp.1059-1065
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• 1993

The sliding wear behavior of the plasma sprayed zirconia containing 8wt% yttria was investigated over a range of room temperature to 800℃. Both of the friction coefficient and the wear loss increased reaching its maximum at about to 499℃. and then decreased again with increasing temperature up to 800℃. The worn surface at elevated temperature were observed and analyzed by scanning electron microscopy and X-ray diffractometer to study the mechanisms of high temperature wear behavior. Surface morphology of the worn samples changes with temperature. Monoclinic (m)/tetragonal (t) x-ray peak intensity ratio of wear debris and worn surface decreased with increasing temperature. Non-transformable tetragonal (t') to metastable tetragonal (t) phase transformation of worn surface increased with increasing temperature. The results indicate that dehumidification and above phase changes are contributing to the high temperature wear behavior of the plasma sprayed ZrO2-Y2O3 coatings.

• Journal of the Korean Society of Propulsion Engineers
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• v.18 no.1
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• pp.26-32
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• 2014

In this study, DC (Direct current) type steam plasma igniter is developed for effective ignition of high-energy density metal aluminum and gas temperature is measured by emission spectrum of OH radical. Because of the ultra-high gas temperature, the DC plasma jet is measured by Boltzmann plot method which is the non-contact optical technique and spectrum comparison-analysis. And both methods were applied to experiment after accurate verification. As a result, we could identify that plasma jet temperature is 2900 K ~ 5800 K in the 30 mm range from the nozzle tip.

• Journal of Welding and Joining
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• v.19 no.4
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• pp.375-378
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• 2001

The new development of the surface hardening technology has been attracted to machine designer and materials scientist in the view point of improvement in the lifetime and performance of the machine. The heat-treatment process has been a well-known technology to make harden the metal surface despite of its inefficiency in productivity and its inherent environmental pollution problem. Therefore, the plasma technology has been applied to the conventional process to improve the above issues and become successful in diminishing the ecological harmfulness. However, the drastic short processing time has been sought to increase the productivity by means of new plasma technology so-called, high temperature pulsed plasma flux (HTPPF). The basic principle and features of this HTPPF will be introduced and the present status of this technology will be described in this paper.

• Bulletin of the Korean Chemical Society
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• v.14 no.2
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• pp.275-281
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• 1993

The new high temperature plasma source for spectrochemical analysis has been developed and characterized. In the development of new high temperature plasma sources for atomic emission spectrocopy, optimization of experimental variables is necessary to achieve the best analytical results. By means of a modified sequential simplex optimization method, six experimental variables were optimized. The line-to-background (L/B) ratio for Ca(II) at 393.37 nm was used as measure of the response function. The optimal experimental conditions were found to be at a current of 27.8 A, a plasma length of 28.8 mm, a sample uptake rate of 1.3 ml/min, a sample carrier gas flow rate of 0.7 ml/min, a plasma gas flow rate of 4.9 l/min, and an observation height of 6.4 mm above the top quartz tube.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.357-362
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• 1996

Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC)) plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor $ZrO_2-Y_2O_3$ and high critical temperature superconductor $YBa_2Cu_3O_7-x$. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the "hot" clusters namely "hot cluster epitaxy (HCE)" is proposed.)" is proposed.osed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.74-74
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• 2010

The aqua-plasma is the non-thermal plasma in electrical conductive electrolyte by generates the vapor film layer on the immersed metal electrode surface. This plasma can generate the hydroxyl radical by dissociate the water molecule with the plasma electron. To develop the plasma discharge device for high efficiency in the hydroxyl radical generation, proper model for estimation of plasma power is necessary. In this work, the 1-D spherical model was developed, considering temperature dependence material constants. The relation between the plasma power and hydroxyl generation was also studied by the comparison between the optical emission intensity from the hydroxyl radical using monochromator and estimated plasma power. First, the thickness of vapor layer thickness was estimated using the Navier-Stokes fluid equation in order to calculate the discharge E-field inside vapor layer. Using the E-field magnitude and power balance on the plasma generation, it was possible to estimate the plasma power. The plasma power was assumed to uniformly fill the vapor layer and the temperature of vapor layer was fixed in the boiling temperature of electrolyte, 375K. In the experiment, the aqua-plasma was discharged in the saline by applied the voltage on the bipolar electrode. The range of applied voltage was 234 to 280V-rms in the frequency of 380 kHz. Two type electrodes were produced with two ${\Phi}0.2$ tungsten. The plasma power was estimated from the V-I signal from the two high voltage probes and current probe. The estimated plasma power agreed with the profile of emission intensity when the plasma discharged between the metal electrode and vapor layer surface. However, when the plasma discharged between the metal electrodes, the increasing rate of emission intensity was lower than the increase of plasma power. It implies that the surface reaction is more sufficient rather than the volume reaction in the radical generation, due to the high density of water molecule in the liquid.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.288-288
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• 2012

The oxidation characteristics of tungsten line pattern during the carbon-based mask layer removal process using oxygen plasmas and the reduction characteristics of the WOx layer formed on the tungsten line surface using hydrogen plasmas have been investigated for sub-50 nm patterning processes. The surface oxidation of tungsten line during the mask layer removal process could be minimized by using a low temperature ($300^{\circ}K$) plasma processing instead of a high temperature plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WOx on the tungsten line could be decreased to 25% of WOx formed by the high temperature processing. The WOx layer could be also completely removed at the low temperature of $300^{\circ}K$ using a hydrogen plasma by supplying bias power to the tungsten substrate to provide an activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40 nm-CD device processing, the complete removal of WOx formed on the sidewall of tungsten line could be observed.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.03a
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• pp.589-596
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• 2008

Performance of a pulsed heat source high temperature inert gas plasma MHD electrical power generator, which can be one of the candidates of space-based laser-to-electrical power converter, is examined by a time dependent two dimensional numerical simulation. In the present MHD generator, the inert gas is assumed to be ideally heated to about $10^4K$ pulsed-likely within short time(${\sim}1{\mu}s$) in a stagnant energy input volume, and the energy of high temperature inert gas is converted to the electricity with the medium of pure inert gas plasma without seeding. The numerical simulation results show that an enthalpy extraction ratio(=electrical output energy/pulsed heat energy) of several tens of % can be achieved, which is the same level as the conventional seeded non-equilibrium plasma MHD generator. Although there still exist many phenomena to be clarified and many problems to be overcome in order to realize the system, the pulsed heat source high temperature inert gas MHD generator is surely worth examining in more detail.

• Journal of the Korean institute of surface engineering
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• v.50 no.4
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• pp.272-276
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• 2017

The response of AISI 310 type austenitic stainless steel to the novel low temperature plasma carburizing process has been investigated in this work. This grade of stainless steel shows better corrosion resistance and high temperature oxidation resistance due to its high chromium and nickel content. In this experiment, plasma carburizing was performed on AISI 310 stainless steel in a D.C. pulsed plasma ion nitriding system at different temperatures in $H_2-Ar-CH_4$ gas mixtures. The working pressure was 4 Torr (533Pa approx.) and the applied voltage was 600 V during the plasma carburizing treatment. The hardness of the samples was measured by using a Vickers micro hardness tester with the load of 100 g. The phase of carburized layer formed on the surface was confirmed by X-ray diffraction. The resultant carburized layer was found to be precipitation free and resulted in significantly improved hardness and corrosion resistance.