• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.266-272
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• 2002

The stochiometric mixture of evaporating materials for the ZnIn$_2$S$_4$ single crystal thin film was prepared from horizontal furnace. To obtain the ZnIn$_2$S$_4$ single crystal thin film, ZnIn$_2$S$_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 $^{\circ}C$ and 450 $^{\circ}C$, respectively and the growth rate of the ZnIn$_2$S$_4$ single crystal thin film was about 0.5 $\mu\textrm{m}$/hr. The crystalline structure of ZnIn$_2$S$_4$ single crystal thin film was investigated by photo1uminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of ZnIn$_2$S$_4$ single crystal thin film measured from Hall effect by van der Pauw method are 8.51${\times}$10$\^$17/ cm$\^$-3/, 291 $\textrm{cm}^2$/V$.$s at 293 $^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the ZnIn$_2$S$_4$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 0.0148 eV and 0.1678 eV at 10 $^{\circ}$K, respectively. From the photoluminescence measurement of ZnIn$_2$S$_4$ single crystal thin film, we observed free excition (E$\_$X/) typically observed only in high quality crystal and neutral donor bound exciton (D$^{\circ}$,X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively. The activation energy of impurity measured by Haynes rule was 130 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the $ZnGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $ZnGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $ZnGa_{2}Se_{4}$ single crystal trun films measured from Hall effect by van der Pauw method are $9.63{\times}10^{17}cm^{-3}$, $296cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c axis of the $ZnGa_{2}Se_{4}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 251.9 meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on $ZnGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton $(A^{0},X)$ having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_{2}Se_{4}$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_{2}Se_{4}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_{2}Se_{4}$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},345cm^{2}/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_{2}$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$ So and the crystal field splitting $\Delta$Cr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_{2}Se_{4}$ single crystal thin film, we observed free excition (Ex) existing only high Quality crystal and neutral bound exiciton $(D^{0},X)$ having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.167-170
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• 2001

The stochiometric mix of evaporating materials for the CdGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 630$^{\circ}C$ and 420$^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CdGa$_2$Se$_4$ single crystal thin films measured from Hall erect by van der Pauw method are 8.27x10$\^$17/ cm$\^$-3/, 345 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on CdGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$\_$X/) existing only high quality crystal and neutral bound exiciton (D$\^$0/,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excision were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV,

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.163-166
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• 2001

The stochiometric mix of evaporating materials for the ZnGa$_2$Se$_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa$_2$Se$_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa$_2$Se$_4$ single crystal thin films measured from Hall effect by van der Pauw method are 9.63x10$^{17}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively, From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa$_2$Se$_4$ single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr were 251.9 MeV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on ZnGa$_2$Se$_4$ single crystal thin film, we observed free excition (E$_{x}$) existing only high quality crystal and neutral bound excition (A$^{0}$ ,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.on energy of impurity was 122 meV.

• Environmental Engineering Research
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• v.19 no.3
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• pp.283-287
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• 2014

Cultivation of microalgae using wastewater exhibits several advantages such as nutrient removal and the production of high valuable products such as lipid and pigments. With this study, two types of wastewater from instant noodle factory; mixed liquor suspended solids (MLSS) and effluents after sedimentation tank were investigated for green microalga Scenedesmus sp. cultivation under laboratory condition. Optimal wastewater dilution percentage was evaluated in 24 wells microplate. MLSS and effluent without dilution showed the highest specific growth rate (${\mu}$) of $1.63{\pm}0.11day^{-1}$ and $1.57{\pm}0.16day^{-1}$, respectively, in which they were significantly (p < 0.05) higher than Scenedesmus sp. grown in BG11 medium ($1.08{\pm}0.14day^{-1}$). Ten days experiment was also conducted using 2000 ml Duran bottle as culture vessel under continuous light at approximately 5000 lux intensity and continuous aeration. It was found that maximum biomass density of microalgae cultivated in MLSS and effluent were $344.16{\pm}105.60mg/L$ and $512.89{\pm}86.93mg/L$ respectively and there was no significant (p < 0.05) difference on growth to control (BG11 medium). Moreover, cultivation microalgae in wastewater could reduce COD in wastewater by 39.89%-73.37%. Therefore, cultivation of Scenedesmus sp. in wastewater from instant noodle factory can yield microalgae biomass production and wastewater reclamation using photobioreactor simultaneously.

• Smart Structures and Systems
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• v.6 no.5_6
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• pp.749-765
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• 2010

There are on-going efforts to utilize guided waves for structural damage detection. Active sensing devices such as lead zirconate titanate (PZT) have been widely used for guided wave generation and sensing. In addition, there has been increasing interest in adopting wireless sensing to structural health monitoring (SHM) applications. One of major challenges in wireless SHM is to secure power necessary to operate the wireless sensors. However, because active sensing devices demand relatively high electric power compared to conventional passive sensors such as accelerometers and strain gauges, existing battery technologies may not be suitable for long-term operation of the active sensing devices. To tackle this problem, a new wireless power transmission paradigm has been developed in this study. The proposed technique wirelessly transmits power necessary for PZT-based guided wave generation using laser and optoelectronic devices. First, a desired waveform is generated and the intensity of the laser source is modulated accordingly using an electro-optic modulator (EOM). Next, the modulated laser is wirelessly transmitted to a photodiode connected to a PZT. Then, the photodiode converts the transmitted light into an electric signal and excites the PZT to generate guided waves on the structure where the PZT is attached to. Finally, the corresponding response from the sensing PZT is measured. The feasibility of the proposed method for wireless guided wave generation has been experimentally demonstrated.

• International Journal of Computer Science & Network Security
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• v.22 no.7
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• pp.91-102
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• 2022

With the evolution of wireless sensor network (WSN) technology, the routing policy has foremost importance in the Internet of Things (IoT). A systematic routing policy is one of the primary mechanics to make certain the precise and robust transmission of wireless sensor networks in an energy-efficient manner. In an IoT environment, WSN is utilized for controlling services concerning data like, data gathering, sensing and transmission. With the advantages of IoT potentialities, the traditional routing in a WSN are augmented with decision-making in an energy efficient manner to concur finer optimization. In this paper, we study how to combine IoT-based deep learning classifier with routing called, Kriging Regressive Deep Belief Neural Learning (KR-DBNL) to propose an efficient data packet routing to cope with scalability issues and therefore ensure robust data packet transmission. The KR-DBNL method includes four layers, namely input layer, two hidden layers and one output layer for performing data transmission between source and destination sensor node. Initially, the KR-DBNL method acquires the patient data from different location. Followed by which, the input layer transmits sensor nodes to first hidden layer where analysis of energy consumption, bandwidth consumption and light intensity are made using kriging regression function to perform classification. According to classified results, sensor nodes are classified into higher performance and lower performance sensor nodes. The higher performance sensor nodes are then transmitted to second hidden layer. Here high performance sensor nodes neighbouring sensor with higher signal strength and frequency are selected and sent to the output layer where the actual data packet transmission is performed. Experimental evaluation is carried out on factors such as energy consumption, packet delivery ratio, packet loss rate and end-to-end delay with respect to number of patient data packets and sensor nodes.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.83-83
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• 2003

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.62$\times$10$^{16}$ cm$^{-3}$ , 296 $\textrm{cm}^2$/V.s at 293 K, respectively From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10 K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 7 meV and 5.9 meV, respectivity. By Haynes rule, an activation energy of impurity was 59 meV.

• Horticultural Science & Technology
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• v.30 no.6
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• pp.664-672
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• 2012

As an artificial light source, light-emitting diode (LED) with a short wavelength range can be used in closed-type plant production systems. Among various wavelength ranges in visible light, individual light spectra induce distinguishing influences on plant growth and development. In this study, we determined the effects of monochromatic LEDs on leaf shape index, growth and the accumulation of phytochemicals in a red leaf lettuce (Lactuca sativa L. 'Sunmang') and a green leaf lettuce (Lactuca sativa L. 'Grand rapid TBR'). Lettuce seedlings grown under normal growing conditions ($20^{\circ}C$, fluorescent lamp + high pressure sodium lamp, $130{\pm}5{\mu}mmol{\cdot}m^{-2}{\cdot}s^{-1}$, 12 hours photoperiod) for 18 days were transferred into incubators at $20^{\circ}C$ equipped with various monochromatic LEDs (blue LED, 456 nm; green LED, 518 nm; red LED, 654 nm; white LED, 456 nm + 558 nm) under the same light intensity and photoperiod ($130{\pm}7{\mu}mmol{\cdot}m^{-2}{\cdot}s^{-1}$, 12 hours photoperiod). Leaf length, leaf width, leaf area, fresh and dry weights of shoots and roots, shoot/root ratio, SPAD value, total phenolic concentration, antioxidant capacity, and the expression of a key gene involved in the biosynthesis of phenolic compounds, phenylalanine ammonia-lyase (PAL), were measured at 9 and 23 days after transplanting. The leaf shape indexes of both lettuce cultivars subjected to blue or white LEDs were similar with those of control during whole growth stage. However, red and green LEDs induced significantly higher leaf shape index than the other treatments. The green LED had a negative impact on the lettuce growth. Most of growth characteristics such as fresh and dry weights of shoots and leaf area were the highest in both cultivars subjected to red LED treatment. In case of red leaf lettuce plants, shoot fresh weight under red LED was 3.8 times higher than that under green LED at 23 days after transplanting. In contrast, the accumulation of chlorophyll, phenolics including antioxidants in lettuce plants showed an opposite trend compared with growth. SPAD value, total phenolic concentration, and antioxidant capacity of lettuce grown under blue LED were significantly higher than those under other LED treatments. In addition, PAL gene was remarkably activated by blue LED at 9 days after transplanting. Thus, this study suggested that the light quality using LEDs is a crucial factor for morphology, growth, and phytochemicals of two lettuce cultivars.