• 제목/요약/키워드: High field

검색결과 16,008건 처리시간 0.04초

Fabrication of high-performance carbon nanotube field emitter using Thermal Chemical Vapor Deposition

  • Yu, Wan-Jun;Cho, You-suk;Park, Gyuseok;Kim, D.J.
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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    • pp.43-43
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    • 2003
  • Carbon nanotubes(CNTs) have many application points, which are field emission devices, composites, hydrogen storage, nanodevices, supercapacitor and secondary battery. The most promising application point is emitter tip mays of field emission devices. Furthermore, it may be also useful as a vacuum device for high frequency and high power. But, there are some obstacles to fabricate carbon nanotube field emission device. One is that CNTs grown by CVD method has weak adhesion with substrate and the other is non-uniform length of them. These problems are very crucial in aging property and reliability of device in the field emission.

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A Study on High Current Rectifier Systems with Mitigated Time-Varying Magnetic Field Generation

  • 김창우;서용석
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2010년도 하계학술대회 논문집
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    • pp.232-233
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    • 2010
  • This paper investigates occupational exposure to time-varying magnetic field generation in high power rectifier systems. Two different kinds of high power rectifier systems of 25kA are modeled and analyzed. The performance is compared and evaluated on the basis of exposure guidelines from ICNIRP. In order to focus on the qualitative effect of rectifier operation, the mechanical structure of current carrying conductors is simplified as infinite long bus-bar model and low frequency harmonic contents up to 65kHz are considered. Thyristor rectifier generates a significant amount of low frequency magnetic field harmonic contents both at ac and dc side of rectifier infringing the limit from ICNIRP. The multilevel rectifier-IGCT type has almost negligible field generation from ac input side and smaller harmonic contents in dc load side complying with ICNIRP guideline. This remarkable advantage of multilevel rectifier-IGCT type can lead to very simple site layout design for installation and cost-effective compliance to guideline of occupational exposure against magnetic field.

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The Field Modulation Effect of a Fluoride Plasma Treatment on the Blocking Characteristics of AlGaN/GaN High Electron Mobility Transistors

  • Kim, Young-Shil;Seok, O-Gyun;Han, Min-Koo;Ha, Min-Woo
    • Transactions on Electrical and Electronic Materials
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    • 제12권4호
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    • pp.148-151
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    • 2011
  • We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

열화상 카메라용 반사경 설계 (Design of a Reflector for Infrared Camera)

  • 배영철
    • 한국전자통신학회논문지
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    • 제9권1호
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    • pp.97-104
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    • 2014
  • 최근에 열화상 카메라(적외선 카메라)는 수 변전 설비의 열화 상태를 진단하는데 많이 사용하고 있다. 그러나 자장이 높은 곳에서는 열화상 카메라의 전자부가 높은 자장으로 인하여 제대로 동작하지 못하는 문제점이 발생한다. 본 논문에서는 수 변전 설비 중 열화상 카메라의 동작에 영향을 주는 높은 자장을 발생시키는 정류기를 포함한 설비에서 적외선 카메라의 손상이 없이 열화진단을 수행할 수 있도록 반사경 설계 기법을 제안한다.

철도교통용 고속 트랜스폰더시스템 실차 시험 (Field Test of High-Speed Transponder System for Rail Transport)

  • 박성수;김성진;이재호
    • 전기학회논문지
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    • 제65권1호
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    • pp.208-213
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    • 2016
  • In order to detect the exact position of high-speed train, it is necessary to obtain location information from the transponder tag installed along the track. When the transponder tag receives the energizing signal from the train, it sends a telegram to the reader, which includes location information. In high-speed railway environment, this telegram can be corrupted by electromagnetic interference caused by onboard electric train power equipments or wayside devices. In order to assess the performance of transponder system under this harsh environment, we carried out field test using HEMU-430X. Field test results are briefly introduced and discussed for the evaluation of the transponder system under development.

고전압설비에서 발생하는 부분방전 검출용 전계센서의 설계 및 특성 검토 (Design and Application of Electric Field Sensor for Measuring PD Signals in High Voltage Equipments)

  • 이강원;강성화;임기조
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제52권10호
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    • pp.431-435
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    • 2003
  • It is very difficult and dangerous to measure PD(Partial Discharges) from high voltage equipments in outdoor situation. But that is very important thing for preventing them from more serious accident by defects made by insulating degradation. This paper provides useful method to detect PD signals easily without any dangerous situation. Electric field sensor by the principle of capacitor can detect PD signals without direct connection between sensor and high voltage equipment and has very wide frequency range suitable for noise rejection. Electric field sensor and related circuit for processing PD signal show good performance as a PD sensor when it is applied to simulated high power equipment generating PD pulses.

Flux Pinning Properties of REBCO coated conductors for High Field Magnets

  • Awaji, Satoshi;Watanabe, Kazuo
    • 한국초전도ㆍ저온공학회논문지
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    • 제13권4호
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    • pp.1-4
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    • 2011
  • From the viewpoint of high field application, the mechanical and critical current properties of recently developed $REBa_2Cu_3O_y$ (RE123, RE: rare-earth) coated conductors are summarized. In addition, effective flux pinning mechanisms in RE123 are also introduced. As one of the examples for high field application, the upgrading of the 18 T cryogen-free superconducting magnet is shown. The large anisotropy of $J_c$ is a problem at low temperature and high magnetic field. The nanorod is considered as the useful methods to improve the anisotropy of $J_c$, although its efficiency becomes small at low temperature.

홀로그래피/스페클 가시화를 이용한 온도분포 측정 (Measurement of Temperature Field using Holographic and Speckle Visualization Techniques)

  • 백성훈;박승규;김철중
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1995년도 추계학술대회 논문집
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    • pp.371-374
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    • 1995
  • The real-time holographic interferometer with a digital high-speed camera is applied to the visualization of transient temperature field. Collimated and diffused laser beams are used to the object beam according to the shape and transmittance of the phase object. Also, ESPI(Electronic Speckle Speckle Pattern Interferometer) technique is used to the visualization and quantitatie measurement of slow-varying temperature field. The experimental results obtained form these two techniques are discussed.

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MR Technology Beyond 4T

  • Vaughan, Thomas
    • 대한자기공명의과학회:학술대회논문집
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    • 대한자기공명의과학회 2003년도 제8차 학술대회 초록집
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    • pp.109-111
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    • 2003
  • Compared to the present clinical field strengths, MR at 47 and above promises to improve anatomic imaging quality by factors, and to bring metabolic and functional imaging to the forefront of research and diagnostic modalities. While human bore sized magnets as high as 9.4T are now installed, realization of the potential benefit of these magnets will require more of the MR system than a simple field, frequency or power scaling from technologies used at lower fields. New constraints on the high field MR studies, both physical and physiological, will require new technical developments to be considered for the highest field systems.

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Vertical Type Organic Transistors and Flexible Display Applications

  • Kudo, Kazuhiro
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.168-169
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    • 2007
  • Organic transistors are promising in the future development of active devices for flexible, low-cost and large-area photoelectric devices. However, conventional organic field-effect transistors have lowspeed, low-power, and relatively high operational voltage. Vertical type transistors show high-speed and high-current characteristics and are suitable for driver elements of flexible displays.

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