• Title/Summary/Keyword: High Resistivity

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Effect of Sintering Aid and Glass-Frit on the Densification and Resistivity of Silver Paste (실버 페이스트의 치밀화 및 비저항에 미치는 소결조제와 프릿의 영향)

  • Lee, Jong-Kook;Park, Sung-Hyun;Yang, Gwon-Seung
    • Korean Journal of Materials Research
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    • v.18 no.5
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    • pp.283-288
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    • 2008
  • The effect of sintering aids and glass-frit on the densification and resistivity of silver paste was investigated in an effort to enhance the sintered density and electrical conductivity of the silver electrode. To prepare Pb-free silver paste for use at low sintering temperatures, two commercial silver powders ($0.8\;{\mu}m$ and $1.6\;{\mu}m$ in size) and 5wt.% lab-synthesized nanoparticles (30-50 nm in size) as a sintering aids were mixed with 3 wt.% or 6 wt.% of glass frit ($Bi_2O_3$-based) using a solvent and three roll mills. Thick films from the silver paste were prepared by means of screen printing on an alumina substrate followed by sintering at $450^{\circ}C$ to $550^{\circ}C$ for 15 min. Silver thick films from the paste with bimodal particles showed a high packing density, high densification during sintering and low resistivity compared to films created using monomodal particles. Silver nanoparticles as a sintering aid enhanced the densification of commercial silver powder at a low sintering temperature and induced low resistivity in the silver thick film. The glass frit also enhanced the densification of the films through liquid phase sintering; however, the optimum content of glass frit is necessary to ensure that a dense microstructure and low resistivity are obtained, as excessive glass-frit can provoke low conductivity due to the interconnection of the glass phase with the high resistivity between the silver particles.

Effect of Nano Filler on the Electrical Properties of Epoxy Composite (에폭시 복합재료의 전기적 특성에 미치는 나노 충진제의 영향)

  • Kim, Joung-Sik;Choi, Hyun-Min;Park, Hee-Doo;Ryu, Boo-Hyung;Hong, Jin-Woong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.46-46
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    • 2010
  • In this paper, we studied the volume resistivity and the electrical conductivity properties of nano composites to investigate the electrical properties of epoxy composites added nano MgO. The specimens were produced by classifying to 1.0, 3.0, 5.0, 10[wt%] and virgin specimen according to the addition amount of MgO. We measured the volume resistivity of nano filler using the High Resistance Meter(4329A) at the measuring temperature changed to 25, 50, 80, 100, and [$120^{\circ}C$]. As the result, it is confirmed that the volume resistivity was the highest stability and volume resistivity value is $2.6{\times}10^{17}\;[\Omega{\cdot}cm]$ at 3.0[wt%]. And it is confirmed that the electrical conductivity property is sharply increased at low electric filed region and the conductivity current density is rapidly increased at high electric filed region.

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Degradation Evaluation of High Pressure Reactor Vessel in field Using Electrical Resistivity Method (전기비저항법을 이용한 고압반응기 열화도 현장평가)

  • Park, Jong-Seo;Baek, Un-Bong;Nahm, Seung-Hoon;Han, Sang-In
    • Journal of the Korean Society for Nondestructive Testing
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    • v.25 no.5
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    • pp.377-383
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    • 2005
  • Because explosive fluid is used at high temperature or under high pressure in petrochemistry and refined oil equipment, the interest about safety of equipments is intensive. Specially, the safety of high pressure reactor vessel is required among them. The material selected in this study is 2.25Cr-1Mo steel that is widely used for high pressure reactor vessel material of petrochemical plant. Eight kinds of artificially aged specimens were prepared by differing from aging periods under three different temperatures. The material was iso-thermally heat treated at higher temperatures than $391^{\circ}C$ that is the operating temperature of high pressure reactor vessel. Vickers hardness properties and electrical resistivity properties about artificially aged material as well as un-aged material were measured, and master curves were made out from the correlation with larson-Miller parameter. And electrical resistivity properties as well as Victors hardness properties measured at high pressure reactor vessel of the field were compared with master curves made out in a laboratory. Degradation evaluation possibility in the field of high pressure reactor vessel by using electrical resistivity method was examined. Electrical resistivity property measured in the field is similar with that of artificially aged material in similar aging level.

Study of the Tracking Fire Risk by Dust Resistivity of Pens (축사별 먼지 저항률에 따른 트래킹화재 위험성에 관한 연구)

  • Park, Kwang-Muk;Bang, Sun-Bae;Kim, Jae-Hyun;Park, Jin-Yeong
    • Fire Science and Engineering
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    • v.30 no.6
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    • pp.99-104
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    • 2016
  • In animal and plant facilities, dust samples were collected from cattle sheds, pigsties and hen-houses, which have high proportion of electrical fires. The samples were diluted in distilled water and water resistivity was measured. Current measurements and tracking reappearance experiments were conducted using distilled water with dust samples. The analysis results were obtained to track the fire risks according to the dust resistivity. The highest value was the dust from cattle sheds followed in order by the dust of pigsties and hen-houses. In experiments measuring the temperature change and RMS current, the lower resistivity of water showed a significant trend of temperature and high amperage. In the tracking reappearance experiment with the lower resistivity water, the tracking speed was fast and the ignition time was shortened. This study investigated why each dust resistivity shows different results.

Make-up of Equivalent Circuit of Grounding System using Water Resistivity in Hemispherical Electrode System (반구형 전극계에서 물의 저항률을 이용한 접지시스템의 등가회로 구성)

  • Lee, Bok-Hee;Choi, Jong-Hyuk;Bae, Sung-Bae
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.22 no.8
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    • pp.109-115
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    • 2008
  • A design criterion of grounding systems is commonly based on the ground resistance measured with low frequency in Korea. When lightning surges which have high frequency components are injected into the grounding system, the grounding impedance is great]y different from the static grounding resistance. In order to investigate the effect of water resistivity on the high frequency performance of grounding systems, this paper presents the frequency-dependent admittance using water tank simulating the grounding system in different water resistivities. As a result, because of capacitive effect admittances and conductance are increased with increasing frequency in higher water resistivity of greater than 500[${\Omega}{\cdot}m$]. On the other hand, admittances and conductances are decreased with increasing frequency due to inductive effect in lower water resistivity of less than 500[${\Omega}{\cdot}m$]. The phase difference between the current and voltage increases in the range of 200[kHz] to 5[MHz]. Consequently, frequency-dependent performance of grounding systems is closely related to the soil resistivity, it is necessary to consider the effect of grounding system performance on the frequency and soil resistivity.

Filling of Cu-Al Alloy Into Nanoscale Trench with High Aspect Ratio by Cyclic Metal Organic Chemical Vapor Deposition

  • Moon, H.K.;Lee, S.J.;Lee, J.H.;Yoon, J.;Kim, H.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.370-370
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    • 2012
  • Feature size of Cu interconnects keep shrinking into several tens of nanometer level. For this reason, the Cu interconnects face challenging issues such as increase of electro-migration, line-width dependent electrical resistivity increase, and gap-filling difficulty in high aspect ratio structures. As the thickness of the Cu film decreases below 30 nm, the electrical resistivity is not any more constant, but rather exponential. Research on alloying with other elements have been started to inhibit such escalation in the electrical resistivity. A faint trace of Al added in Cu film by sputtering was reported to contribute to suppression of the increase of the electrical resistivity. From an industrial point of view, we introduced cyclic metal organic chemical vapor deposition (MOCVD) in order to control Al concentration in the Cu film more easily by controlling the delivery time ratio of Cu and Al precursors. The amount of alloying element could be lowered at level of below 1 at%. Process of the alloy formation was applied into gap-filling to evaluate the performance of the gap-filling. Voidless gap-filling even into high aspect ratio trenches was achieved. In-depth analysis will be discussed in detail.

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Substrate Bias Voltage Dependence of Electrical Properties for ZnO:Al Film by DC Magnetron Sputtering (Bias 전압에 따른 ZnO:Al 투명전도막의 전기적 특성)

  • 박강일;김병섭;임동건;이수호;곽동주
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.7
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    • pp.738-746
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    • 2004
  • Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.

Application of SP and Pole-pole Array Electrical Resistivity Surveys to the Seawater Leakage Problem of the Embankment (방조제 누수지점 탐지를 위한 SP및 단극배열 전기비저항탐사의 적용)

  • 송성호;이규상;김진호;권병두
    • Economic and Environmental Geology
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    • v.33 no.5
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    • pp.417-424
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    • 2000
  • We applied SP monitoring and resistivity surveys using the pole-pole electrode array to seawater leakage problems in the Youngsan estuary dam and the Eoeun embankment to estimate and detect the zone of seawater leakage. The embankment is generally affected by tidal variation and has low resistivity characteristics due to the high saturation of seawater. For this reason, SP monitoring and the pole-pole array resistivity surveys, which are relatively more effective to the conductive media, were carried out to delineate the leakage zones of sea water through the embankment. We checked out electrical conductivity (EC) and temperature variations along the inner part of Youngsan estuary dam to detect the zone of seawater leakage and found that the measured EC value agreed to that of seawater in the leakage zone and the temperature was lower than that of the vicinity of leakage zone. SP monitoring results were coincided with tidal variations at each embankment. At the leakage zones in the Youngsan estuary dam and the Eoeun embankment, SP anomalies are in the range of -60~-85 mV and -20~-50 mV, respectively, and true resistivity values obtained by 2-D inversion are 3~15 ohm-m and below 0.3 ohm-m, respectively. Both SP monitoring and the pole-pole array resistivity method are found to be quite effective for investigation of seawater leakage zones in the embankment.

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Spontaneous Hall Effect in Amorphous Tb-Fe and Sm-Fe Thin films

  • Kim, T. W.;S. H. Lim;R. J. Gambino
    • Proceedings of the Korean Magnestics Society Conference
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    • 2000.09a
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    • pp.337-345
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    • 2000
  • The spontaneous Hall effect in amorphous Tb-Fe and Sm-Fe thin films, which possess excellent magnetic softness, is investigated in this work to seek a possibility of practical applications of these thin films as sensors. The resistivity of Tb-Fe thin films ranges from 180 to 250 Ωcm as the Tb content varies from 35 to 46 at. %. Tb-Fe thin films show negative Hall resistivity ranging from - 7.3 to - 5.0 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of -4.1 to -2.0 %. On the other hand, the resistivity of Sm-Fe thin films ranges from 150 to 166 Ωcm as the Sm content varies from 22 to 31 at. %. Sm-Fe thin films show positive Hall resistivity which varies from 7.1 to 2.8 Ωcm in the same composition range, giving the normalized resistivity ratio in the range of 4.8 to 1.7 %. These values are significantly high compared with the values of other R-T alloys, Tb-Co alloys for example, where the highest reported value is 2.5 %. Between the two different sets of samples, Tb-Fe thin films with perpendicular anisotropy are considered to be more suitable for practical applications, since saturation is reached at a los magnetic field, approximately 2 kOe in a Tb$\sub$35.1/ Fe$\sub$64.9/ thin film, for example.

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p-contact resistivity influence on device-reliability characteristics of GaN-based LEDs (p-contact 저항에 따른 GaN기반 LED의 device-reliability 특성)

  • Park, Min-Jung;Kim, Jin-Chul;Kim, Sei-Min;Jang, Sun-Ho;Park, Il-Kyu;Park, Si-Hyun;Cho, Yong;Jang, Ja-Soon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.159-159
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    • 2010
  • We conducted bum-in test by current stress to evaluate acceleration reliability characteristics about p-resistivity influence of GaN-based light-emitting diodes. The LEDs used in this study are the polarization field-induced LED(PF-LED) having low p-resistivity and the highly resistive LED(HR-LED) having high p-resistivity. The result of high stress experiment shows that current crowding phenomenon is occurred from the center of between p-bonding pad and n-bonding pad to either electrodes. In addition, series resistance and optical power decrease dramatically. These results means that the resistance of between p-bonding pad and p-GaN affect reliability. That's why we need to consider the ohmic contact of p-bonding pad when design the high efficiency and high reliability LEDs.

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