• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.4
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• pp.176-179
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• 2005

The increasing demand for high density packaging technologies and the evolution to mixed digital and analogue devices has been the con-set of increasing research in thin film multi-layer technologies such as the passive components integration technology. In this paper, Cu and TaO thin film with RF sputtering was deposited for spiral inductor and MOM capacitor on the $SiO_2$/Si(100) substrate. MOM capacitor and spiral inductor were fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, important devices for mobile communication system. Based on the high-Q values of passive components, MOM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and 5 dB for a 900 MHz filter. This paper also discusses a analysis and practical design to thin-film L-C band pass filter.

• Journal of the Semiconductor & Display Technology
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• v.2 no.1
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• pp.11-14
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• 2003

The high Q(quality factor) suspended spiral inductors were fabricated on the silicon substrate by 3D surface micromachined process. The integration of 2.4GHz VCO has been performed by fabricating suspended spiral inductor of the top of CMOS VCO circuit. The phase noise of VCO integrated MEMS inductor is 93.5 dBc/Hz at 100kHz of offset frequency.

• Proceedings of the Korean Magnestics Society Conference
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• 2002.12a
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• pp.218-219
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• 2002

Recently, RF lumped-element devices are demanded strongly in application of hand-held mobile communication equipments. Many workers have been reported RF integrated inductor as well as air cores. In order to achieve the high Q value, they removed backside of substrate by micro machining process [1] and also another MEMS-like approach such as levitated structure [2]. These approaches are capable of suppressing the parasitic effects, but low reproducibility and high cost problems remain. (omitted)

• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.213-216
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• 2004

This paper describes design and implementation of the 5.5 GHz VCO with parallel-branch inductors using 0.8${\mu}m$ SiGe HBT process technology. The proposed parallel-branch inductor shows $12 \%$ improvement in quality factor in comparison with the conventional inductor. A phase noise of -93 dBc/Hz is measured at 100 kHz offset frequency, and the harmonics in the VCO are suppressed less than -23 dBc. The single-sided output power of the VCO is -6.5$\pm$1.5 dBm. The manufactured VCO consumes 15.0 mA with 2.5 V supply voltage. Its chip areas are 1.8mm ${\times}$ 1.2mm.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.86-89
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• 2002

A new design approach for realising low-power low-voltage high-Q high-order RE bandpass filter is proposed. Based on the gyrator-C inductor topology, a 2$\^$nd/-order biquadratic bandpass filter can be realised by adding a series capacitor to the input port of the gyrator. High-Q 2$\^$nd/-order and 4$\^$th/-order fully differential RF bandpass filters operating in the 2.4-㎓ ISM (Industrial, scientific and medical) frequency band under a 2-V single power supply voltage with low power dissipation are reported.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.71-71
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• 2009

This paper describes a simple, on-chip CMOS compatible the thin-film inductor applied for the dc-dc converters. A fully CMOS-compatible thin-film inductor with a bottom NiFe core is integrated with the DC-DC converter circuit on the same chip. By eliminating ineffective top magnetic layer, very simple process integration was achieved. Fabricated monolithic thin film inductor showed fairly high inductance of 2.2 ${\mu}H$ and Q factor of 11.2 at 5MHz. When the DC-DC converter operated at $V_{in}=3.3V$ and 5MHz frequency, it showed output voltage $V_{out}=8.0V$, and corresponding power efficiency was 85%.

• Journal of Industrial Technology
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• v.29 no.B
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• pp.101-105
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• 2009

A 1.571GHz LC VCO with optimized spiral inductor for GPS receiver is designed in 130nm CMOS process. The phase noise of the VCO has been reduced the use of high Q inductor and on chip filter. It has phase noise of -91dBc/Hz, -111dBc/Hz, and -131dBc/Hz at 10kHz, 100kHz, and 1MHz offset frequencies from the carrier, respectively. This VCO consumes 2mA from a 0.6V supply.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.163-167
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• 2003

In this paper, an air-suspension type RF MEMS inductor is fabricated, and an appropriate de-embedding scheme for 3-dimenstional MEMS structure is applied and verified with inductance calculation algorithm. With the presented de-embedding method, parasitics from contanct pads and feeding lines are effectively and accurately de-embedded using open and short calibration procedure, and only spiral and posts can be characterized as a high-Q inductor structure. The validity of the de-embedding method is verified by the comparison of the measured and calculated inductances of two 1.5 and 2.5 turn square spiral inductors. The open-short de-embedded inductance error is below 5% each case in comparison with the calculated value based on H.M. Greenhouse's algorithm.

• Journal of Power Electronics
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• v.14 no.3
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• pp.432-443
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• 2014

In order to improve the output efficiency of solar cells and to extend the life span of batteries, the input currents of converters are required to be continuous. If low output voltage ripple is required at the same time, it is obvious that the application of basic two-order converters (such as Buck and Boost derived converters) will not be good enough. In this paper, a lot of non-isolated push-pull converters (NIPPCs) with continuous current will be introduced due to their lower current stress, higher efficiency and better EMC performance. By decomposing the converters into push-pull cells, inductor and free-wheeling diodes, two families of NIPPCs based on single inductor and coupled inductor separately are systematically generated. Furthermore, characteristics analyses for some of the generated converters are also shown in this paper. Finally, two prototypes based on the corresponding typical topologies are built in the lab to verify the theoretical outcomes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.38-38
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• 2008

무선 통신에 사용되는 기판에서 passive device는 대부분 기판 위에 개별적으로 표면 실장 되고 있으며 전체 기판면적에 80% 정도를 차지하고 있다. 따라서 기판의 소형화, 경량화를 위하여 많은 면적을 차지하는 수동소자들을 다층인쇄회로기판(multi-layer circuit board)에 내장하는 내장형 수동소자(embedded passive device) 기술이 연구되고 있다. 본 연구원에서 개발한 복합재료는 무기물 충전제 $SrTiO_3$를 사용하였으며, 열가소성 수지로는 cyclo-olefin-polymer계열의 수지를 바탕으로 제작 하였고, 유전율7~7.5이고 유전손실은 0.0045이다. 또한 $SrTiO_3$/유기물 복합재료는 공정온도가 낮고 경제적인 유기물에 높은 유전상수를 갖는 무기물이 분산되어 있는 형태이며, 우수한 유전 특성, 화학적 안정성, 저온 제조공정, 제조단가의 감소, 패키징 크기의 감소 등의 장점을 갖는다. 개발된 재료를 기반으로 Multi-layer 구조를 이용한 다양한 용량대의 capacitor를 구현 하였으며, spiral inductor 와 내장형 spiral inductor를 구현하여 다양한 용량대의 inductor를 구현 하였다. 그리고 각각의 구조에 따른 inductance와 Q factor를 분석 하였으며, Q factor가 100이상인 high Q inductor도 구현하였다. 이렇게 구현된 내장형 수동소자는 기판의 크기의 감소와 제조 단가의 절감, 최소 크기의 기판을 구현하는데 응용이 가능 할 것으로 예상 된다.