• Journal of the Computational Structural Engineering Institute of Korea
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• v.24 no.6
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• pp.699-705
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• 2011

High-maneuver missile is a projectile which demands a strong momentum at short time. To produce a necessary thrust for the flight, the gas of high temperature and pressure is generated through explosive combustion of solid propellant, and a great thrust can be obtained by expanding this high temperature and pressure gas. Although the operating time of a rocket motor is less than a few seconds, a failure of part or ablation near the throat of nozzle may take place during the expansion of high temperature and pressure gas for great thrust. In other words, for the precise control of a missile an exact stress analysis considering both, the thermal stress caused by the heat transfer between combustion gas and wall, and the mechanical stress caused by the pressure change in the flow, should be considered first. In this connection, this study investigated the safety, as a point of view of stress and melting point of the material, of the pre-designed thrust generating structure which is subjected to high temperature and pressure as a function of motor operating time.

• Journal of Powder Materials
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• v.18 no.2
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• pp.95-104
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• 2011

• Journal of Powder Materials
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• v.14 no.5
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• pp.315-319
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• 2007

Pure WC or WC with low Co concentration less than 0.5 wt.% is studied to fabricate high density WC/Co cemented carbide using vacuum sintering and post HIP process. Considering the high melting point of WC, it is difficult to consolidate it without the use of Co as binder. In this study, the effect of lower Co addition on the microstructure and mechanical properties evolution of WC/CO was investigated. By HIP process after vacuum sintering, hardness and density was sharply increased. The hardness values was $2,800kgf/mm^2$ using binderless WC.

• Journal of Welding and Joining
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• v.13 no.2
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• pp.132-138
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• 1995

Rene80 superalloy was liquid phase diffusion bonded by using boron(B) as an insert material, where B has high diffusivity and higher melting point as an insert material. Bonding procedure and bonding mechanism of Rene80/B/Rene80 joint were investigated. As results, liquid metal was produced by solid state reaction between base metal and insert material on bonding zone. The liquid metal was produced preferentially at the grain boundary. Except for production of liquid metal, other bonding procedure was nearly same as TLP(Transient Liquid Phase) bonding. Bonding time, however, was reduced compared to prior result of TLP bonding. By bonding S.4ks at l453K, Ren80/B/Rene80 joint was isothermally solidified and homogenized where thickness of insert material was 7.5.mu.m.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.1
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• pp.46-51
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• 2008

Extra-high voltage(EHV) disconnecting switch(DS) consists of the electrical contacts and mechanical parts which actuate the contacts. When the short-circuit condition occurs, a large amount of current flows through the electrical contact in disconnecting switches and this causes considerable temperature rise due to Joule heating. If the temperature rise is higher than the melting point of contact material, the DS contact becomes melting and cannot be usable anymore. For this reason, the analysis for capability of carrying short-circuit current in DS contacts must be performed at a design stage. Here, we proposed a numerical technique for evaluating the capability of carrying short-circuit current at electrical contacts in EHV DS. In this numerical approach, the mechanical and thermal analyses were simulated to check the capability of carrying short-circuit current. First, the applied pressure at contact parts was analyzed considering the mechanical properties, and then contact resistance was calculated by an empirical equation. Finally, thermal analysis was performed with resistance variation at electrical contacts. To verify these numerical results, the distributions of temperature in DS were experimentally measured and compared with each other. The results from experiments were agreed well with those from the proposed numerical simulations.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.28-31
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• 2001

Recently, in order to satisfy the consumer's demand the life cycle and the lead-time of a product is to be shortened. It is thus important to reduce the time and cost in manufacturing trial products. Several techniques have been developed and successfully commercialized in the market RPM(Rapid Prototyping and Manufacturing). However, most commercial systems currently use resins or waxes as the raw materials. So, the limited mechanical strength for functional testing is regarded as an obstacle towards broader application of rapid prototyping techniques. To overcome this problems, high-speed machining technology is being investigated worldwide for rapid manufacturing and even for direct rapid tooling application. In this paper, some fundamental experiments and analyses are carried out to obtain the filling time, materials, method, and process parameters for HisRP process. HisRP is a combination process using high-speed machining technology with automatic filling. In filling process, Bi58-Sn alloy is chosen because of the properties of los-melting point, low coefficient of thermal expansion and enviromental friendship. Also the use of filling wire is of advantage in term of simple and flexible mechanism. Then the rapid manufacturing product, for example a skull, is machined for aluminum material by HisRP process with an automatic set-up device of 4-faces machining.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.1215-1219
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• 2007

In this paper, we present a study on the polypropylene/thermotropic liquid crystalline polymer blends. In previous researches, the blends are fabricated at very high temperatures, at least 300oC, since the TLCPs investigated in most studies have melting temperatures higher than 270oC. As a consequence, the thermal degradation of PP can not be avoidable. In order to obtain high physical properties, the excess amount of TLCP must be added. In this study, a new type of TLCP was used in the PP/TLCP blends. Since the new TLCP has a melting point of 220oC, the blending can be performed at much lower temperature than the previous studios. The new PP/TLCP shows similar or somewhat higher physical properties than those of the previous studies. It is proved that the new TLCP can be used as a reinforcement material in PP based blends.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.539-542
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• 2001

In SiC semiconductor device processing, it needs high temperature anneal for activation of ion implanted dopants. The macrosteps, 7~8nm in height, are formed on the surface of SiC substrates during activation anneal. We have investigated the effect of thermally-grown SiO$_2$layer on the suppression of macrostep formation during high temperature anneal. The cap oxide layer was found to be efficient for suppression of macrostep formation even though the annealing temperature is as high as the melting point of SiO$_2$. The thin cap oxide layer (10nm) was evaporated during anneal then the macrosteps were formed on SiC substrate. On the other hand the thicker cap oxide layer (50nm) remains until the anneal process ends. In that case, the surface was smoother and the macrosteps were rarely formed. The thermally-grown oxide layer is found to be a good material for the suppression of macrostep formation because of its feasibility of growing and processing. Moreover, we can choose a proper oxide thickness considering the evaporate rate of SiO$_2$at the given temperature.

• Nuclear Engineering and Technology
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• v.45 no.6
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• pp.811-820
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• 2013

SiC has been under investigation as a potential cladding for LWR fuel, due to its high melting point and drastically reduced chemical reactivity with liquid water, and steam at high temperatures. As SiC is a brittle material its behavior during the reflood phase of a Loss of Coolant Accident (LOCA) is another important aspect of SiC that must be examined as part of the feasibility assessment for its application to LWR fuel rods. In this study, an experimental assessment of thermal shock performance of a monolithic alpha phase SiC tube was conducted by quenching the material from high temperature (up to $1200^{\circ}C$) into room temperature water. Post-quenching assessment was carried out by a Scanning Electron Microscopy (SEM) image analysis to characterize fractures in the material. This paper assesses the effects of pre-existing pores on SiC cladding brittle fracture and crack development/propagation during the reflood phase. Proper extension of these guidelines to an SiC/SiC ceramic matrix composite (CMC) cladding design is discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.222-229
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• 2003

InP crystal is an increasingly important semiconductor material in the application of long-wave optoelectronic and high frequency devices. The equilibrium vapor pressure of phosphorus at the melting point of InP is so high that the synthesis process is very difficult. Liquid-encapsulated Czochralski (LEC) pulling from the melt at high pressure is a generally favored technique to grow InP single crystals. This technique involves two steps: the synthesis of polycrystalline powder and the growth of single crystal from the melt at high pressure. This article reviewed the latest development in the preparation of InP crystal and the evaluation on the crystal quality.