• 한국전산구조공학회논문집
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• 제24권6호
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• pp.699-705
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• 2011

고기동 유도탄은 짧은 시간에 큰 추력을 필요로 하는 발사체이다. 유도탄의 비행에 필요한 추력을 얻기 위하여 고체 연료를 폭발적으로 연소시키면 고온, 고압의 연소 가스가 발생되고, 이 연소 가스를 초음속 노즐을 통하여 팽창시킴으로서 큰 추력을 얻게 된다. 로켓 모터의 작동 시간은 수초 미만에 지나지 않으나 큰 추력을 내기 위해 고온 고압의 연소 가스가 이용됨으로 평창 과정 중 시스템 부품의 파손 혹은 노즐목 부근에서 삭마현상이 발생되기도 한다. 즉, 탄의 정확한 제어를 위해서는 연소 가스와 벽면과의 열전달에 따른 열응력과 유동장 내의 압력의 변화에 따른 구조체 응력이 동시에 고려된 정확한 응력해석이 선행되어야만 한다. 본 논문에서는 예비 설계된 추력 발생장치에 고온 고압의 연소 가스가 유동할 때 모터의 작동시간에 따른 구조체의 안전성을 응력과 재료의 용융온도의 측면으로부터 구명하였다.

• 한국분말재료학회지
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• 제18권2호
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• pp.95-104
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• 2011

• 한국분말재료학회지
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• 제14권5호
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• pp.315-319
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• 2007

Pure WC or WC with low Co concentration less than 0.5 wt.% is studied to fabricate high density WC/Co cemented carbide using vacuum sintering and post HIP process. Considering the high melting point of WC, it is difficult to consolidate it without the use of Co as binder. In this study, the effect of lower Co addition on the microstructure and mechanical properties evolution of WC/CO was investigated. By HIP process after vacuum sintering, hardness and density was sharply increased. The hardness values was $2,800kgf/mm^2$ using binderless WC.

• Journal of Welding and Joining
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• 제13권2호
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• pp.132-138
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• 1995

Rene80 superalloy was liquid phase diffusion bonded by using boron(B) as an insert material, where B has high diffusivity and higher melting point as an insert material. Bonding procedure and bonding mechanism of Rene80/B/Rene80 joint were investigated. As results, liquid metal was produced by solid state reaction between base metal and insert material on bonding zone. The liquid metal was produced preferentially at the grain boundary. Except for production of liquid metal, other bonding procedure was nearly same as TLP(Transient Liquid Phase) bonding. Bonding time, however, was reduced compared to prior result of TLP bonding. By bonding S.4ks at l453K, Ren80/B/Rene80 joint was isothermally solidified and homogenized where thickness of insert material was 7.5.mu.m.

• 전기학회논문지
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• 제57권1호
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• pp.46-51
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• 2008

Extra-high voltage(EHV) disconnecting switch(DS) consists of the electrical contacts and mechanical parts which actuate the contacts. When the short-circuit condition occurs, a large amount of current flows through the electrical contact in disconnecting switches and this causes considerable temperature rise due to Joule heating. If the temperature rise is higher than the melting point of contact material, the DS contact becomes melting and cannot be usable anymore. For this reason, the analysis for capability of carrying short-circuit current in DS contacts must be performed at a design stage. Here, we proposed a numerical technique for evaluating the capability of carrying short-circuit current at electrical contacts in EHV DS. In this numerical approach, the mechanical and thermal analyses were simulated to check the capability of carrying short-circuit current. First, the applied pressure at contact parts was analyzed considering the mechanical properties, and then contact resistance was calculated by an empirical equation. Finally, thermal analysis was performed with resistance variation at electrical contacts. To verify these numerical results, the distributions of temperature in DS were experimentally measured and compared with each other. The results from experiments were agreed well with those from the proposed numerical simulations.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2001년도 춘계학술대회 논문집
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• pp.28-31
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• 2001

Recently, in order to satisfy the consumer's demand the life cycle and the lead-time of a product is to be shortened. It is thus important to reduce the time and cost in manufacturing trial products. Several techniques have been developed and successfully commercialized in the market RPM(Rapid Prototyping and Manufacturing). However, most commercial systems currently use resins or waxes as the raw materials. So, the limited mechanical strength for functional testing is regarded as an obstacle towards broader application of rapid prototyping techniques. To overcome this problems, high-speed machining technology is being investigated worldwide for rapid manufacturing and even for direct rapid tooling application. In this paper, some fundamental experiments and analyses are carried out to obtain the filling time, materials, method, and process parameters for HisRP process. HisRP is a combination process using high-speed machining technology with automatic filling. In filling process, Bi58-Sn alloy is chosen because of the properties of los-melting point, low coefficient of thermal expansion and enviromental friendship. Also the use of filling wire is of advantage in term of simple and flexible mechanism. Then the rapid manufacturing product, for example a skull, is machined for aluminum material by HisRP process with an automatic set-up device of 4-faces machining.

• 한국산학기술학회논문지
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• 제8권5호
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• pp.1215-1219
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• 2007

이 논문에서는 폴리프로필렌/열방성 액정고분자 블렌드에 관한 연구 결과를 나타냈다. 기존의 연구에서 주로 쓰인 액정고분자 (Thermotropic Liquid Crystalline Polymer, TLCP)는 용융점이 대부분 270o0 이상으로 가공은 적어도 300oC 이상에서 가능하기 때문에, PP와의 블렌드 시 PP의 열분해를 피할 수 없다. 이 때문에 원하는 정도의 물성을 얻기 위해서는 과량의 TLCP를 첨가하여야 한다. 이 연구에서 고온용 TLCP 대신 융점이 220oC 정도 되는 새로운 TLCP를 사용하여 블렌드를 제조하였고, 그 특성을 관찰하였다. 연구 결과 기존 PP/TLCP 블렌드와 비교해 동등 이상의 물성을 보임을 관찰할 수 있었고, 이로서 새로운 저온용 TLCP가 PP의 강화제로 사용될 수 있음을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.539-542
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• 2001

In SiC semiconductor device processing, it needs high temperature anneal for activation of ion implanted dopants. The macrosteps, 7~8nm in height, are formed on the surface of SiC substrates during activation anneal. We have investigated the effect of thermally-grown SiO$_2$layer on the suppression of macrostep formation during high temperature anneal. The cap oxide layer was found to be efficient for suppression of macrostep formation even though the annealing temperature is as high as the melting point of SiO$_2$. The thin cap oxide layer (10nm) was evaporated during anneal then the macrosteps were formed on SiC substrate. On the other hand the thicker cap oxide layer (50nm) remains until the anneal process ends. In that case, the surface was smoother and the macrosteps were rarely formed. The thermally-grown oxide layer is found to be a good material for the suppression of macrostep formation because of its feasibility of growing and processing. Moreover, we can choose a proper oxide thickness considering the evaporate rate of SiO$_2$at the given temperature.

• Nuclear Engineering and Technology
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• 제45권6호
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• pp.811-820
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• 2013

SiC has been under investigation as a potential cladding for LWR fuel, due to its high melting point and drastically reduced chemical reactivity with liquid water, and steam at high temperatures. As SiC is a brittle material its behavior during the reflood phase of a Loss of Coolant Accident (LOCA) is another important aspect of SiC that must be examined as part of the feasibility assessment for its application to LWR fuel rods. In this study, an experimental assessment of thermal shock performance of a monolithic alpha phase SiC tube was conducted by quenching the material from high temperature (up to $1200^{\circ}C$) into room temperature water. Post-quenching assessment was carried out by a Scanning Electron Microscopy (SEM) image analysis to characterize fractures in the material. This paper assesses the effects of pre-existing pores on SiC cladding brittle fracture and crack development/propagation during the reflood phase. Proper extension of these guidelines to an SiC/SiC ceramic matrix composite (CMC) cladding design is discussed.

• 한국결정성장학회지
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• 제13권5호
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• pp.222-229
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• 2003

InP crystal is an increasingly important semiconductor material in the application of long-wave optoelectronic and high frequency devices. The equilibrium vapor pressure of phosphorus at the melting point of InP is so high that the synthesis process is very difficult. Liquid-encapsulated Czochralski (LEC) pulling from the melt at high pressure is a generally favored technique to grow InP single crystals. This technique involves two steps: the synthesis of polycrystalline powder and the growth of single crystal from the melt at high pressure. This article reviewed the latest development in the preparation of InP crystal and the evaluation on the crystal quality.