• Journal of Satellite, Information and Communications
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• v.12 no.1
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• pp.114-119
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• 2017

In this paper we present the search on HC-06 Bluetooth based driver module for emergency LED Multi-Directional Indicator. Nowadays, a growing trends in which electronic displays such as LED, LCD or plasma monitors are being installed in public places like bars, stores, entertainment areas, restaurants, lobbies, etc. In this paper, the study is curried out on efficiency of HC-06 Bluetooth module based controller driver that relates generally to the field of emergency signage management systems for displaying various indicator contents remotely on electronic displays in public and privates venues. It allows user smart devices interaction remotely with digital signage by providing content for displaying on at least one display in a venue. Depending on the emergency case, HC-06 Bluetooth based driver module proves the high efficiency as well as good performance of processing and communicating remotely the indicator based message that is displayed from a venue management control system by using smart devices. The system combines smart device that linked to HC-06 Bluetooth module with ATmega168/328 embedded micro controller which result by switching the displayer containing the digital signage indicator based message.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.199-205
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• 2006

Patterned sapphire substrates (PSS) were fabricated by a simple wet etching process with $SiO_2$ stripe masks and a mixed solution of $H_2SO_4$ and $H_3PO_4$. GaN layers were epitaxially grown on the PSS under the optimized 2-step growth condition of metalorganic vapor deposition. During the 1st growth step, GaN layers with triangular cross sections were grown on the selected area of the surface of the PSS, and in the 2nd growth step, the GaN layers were laterally grown and coalesced with neighboring GaN layers. The density of threading dislocations on the surface of the coalesced GaN layer was $2{\sim}4\;{\times}\;10^7\;cm^{-2}$ over the entire region. The epitaxial structure of near-UV light emitting diode (LED) was grown over the GaN layers on the PSS. The internal quantum efficiency and the extraction efficiency of the LED structure grown on the PSS were remarkably increased when compared to the conventional LED structure grown on the flat sapphire substrate. The reduction in TD density and the decrease in the number of times of total internal reflections of the light flux are mainly attributed due to high level of scattering on the PSS.

• Journal of Power Electronics
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• v.11 no.3
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• pp.271-278
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• 2011

This paper presents a LLC resonant controller IC for secondary side control without external active devices to achieve low profile and low cost LED back light units. A gate driving transformer is adopted to isolate the primary side and the secondary side instead of an opto-coupler. A new integrated dimming circuitry is proposed to improve the dynamic current control characteristic and the current density of a LED for the brightness modulation of a large screen LCD. A dual-slope clock generator is proposed to overcome the frequency error due to the under shoot in conventional approaches. This chip is fabricated using 0.35 ${\mu}m$ BCD technology and the die size is $2{\times}2\;mm^2$. The frequency range of the clock generator is from 50 kHz to 500 kHz and the range of the dead time is from 50 ns to 2.2 ${\mu}s$. The efficiency of the LED driving circuit is 97 % and the current consumption is 40 mA for a 100 kHz operation frequency from a 15 V supply voltage.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.11
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• pp.193-198
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• 2012

An LED converter used to operate an LED with high efficiency and long lifespan, activates an LED by keeping voltage and current constant. In spite of voltage drop by LED's overheating and over-voltage by damage of a power line and by circuit problem, most existing LED converters supply unchanged constant voltage and current to the LED. Eventually, LED is out of order because of over-voltage or over-current. To avoid the breakdown of an LED by over-voltage and over-current, we propose a new scheme which deactivate the PWM circuit in the event of over-current generating. The PWM circuit operates below the pre-determined level of current. While the over-voltage is generated in PWM circuit, the feedback circuit makes the PWM circuit stopped and therefore prevents LED from being damaged by over-voltage and over-current.

• Applied Science and Convergence Technology
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• v.25 no.1
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• pp.1-6
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• 2016

Quantum dots (QDs) are considered as excellent color conversion and self-emitting materials for display and lighting applications. In this article, various technologies which can be used to realize white light emission with QDs are discussed. QDs have good color purity with a narrow emission spectrum and tunable optical properties with size control capabilities. For white light emission with a color-conversion approach, QDs are combined with blue-emitting inorganic and organic light-emitting diodes (LED) to generate white emission with high energy conversion efficiency and a high color rendering index for various display and lighting applications. Various device structures for self-emitting white QD light-emitting diodes (QD-LED) are also reviewed. Various stacking and patterning technologies are discussed in relation to QD-LED devices.

• The Transactions of the Korean Institute of Power Electronics
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• v.15 no.4
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• pp.319-326
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• 2010

The power supply devices for reducing the size of the LCD TV are increasingly required for high efficiency and highe power density. Recently, the LED backlight of the LCD TV comes into the spotlight for LCD TV, because the conventional CCFL backlight has difficult to use constantly according to the mercury restrictions. And In this paper, the LLC resonant converter using the planar transformer for slim-type LED backlight of LCD TV is presented and verified through an experimental prototype for 47 inch LCD TVs with LED backlight system.

• Journal of the Korean Solar Energy Society
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• v.31 no.2
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• pp.113-119
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• 2011

LED lighting has received much attention in recent years due to its high energy efficiency and environmental friendliness. As the color of light can be obtained by adjusting the light intensity of LEDs, the quality of visual environment can be improved. The aims of this study are to develop a wavelength adjustable LED lighting system and to examine its lighting performances. The LED lighting system and experimental cell for assessment of the lighting performance were constructed. This LED lighting system is able to materialize the various spectral power distribution and color temperature of light through the control of the four dimmers. Up to $432^4$ kinds of light combinations are possible. The range of illuminance on workplane were measured as 7~1,831 ㏓. Improvement of psychological and physical functions for occupants can be expected according to control of lighting performances.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.229-233
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• 2015

Currently, the majority of commercial white LEDs are phosphor converted LEDs made of a blue-emitting chip and YAG yellow phosphor dispersed in organic silicone. However, silicone in high-power devices results in long-term performance problems such as reacting with water, color transition, and shrinkage by heat. Additionally, yellow phosphor is not applicable to warm white LEDs that require a low CCT and high CRI. To solve these problems, mixing of green phosphor, red phosphor and glass, which are stable in high temperatures, is common a production method for high-power warm white LEDs. In this study, we fabricated conversion lenses with LUAG green phosphor, SCASN red phosphor and low-softening point glass for high-power warm white LEDs. Conversion lenses can be well controlled through the phosphor content and heat treatment temperature. Therefore, when the green phosphor content was increased, the CRI and luminance efficiency gradually intensified. Moreover, using high heat treatment temperatures, the fabricated conversion lenses had a high CRI and low luminance efficiency. Thus, the fabricated conversion lenses with green and red phosphor below 90 wt% and 10 wt% with a sintering temperature of $500^{\circ}C$ had the best optical properties. The measured values for the CCT, CRI and luminance efficiency were 3200 K, 80, and 85 lm/w.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.14 no.5
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• pp.95-102
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• 2014

In this paper, we propose the high speed PLC-based automatic control system for a smart LED streetlight. The proposed the automatic control system were constructed of a power line modem part and monitoring part, streetlight controller part for the high speed communication frequency band and streetlight ballasts characterization and real-time remote control using a high-speed PLC network, and it was designed to meet to lighting grades conditions of KS road lighting standards. The proposed automatic control system were easy monitoring of the power consumption using PC through to the comparison result of the existing streetlight system. As a result, it was confirmed to the possibility of efficient operation for the real-time monitoring and maintenance by induction of reasonable power consumption through to the LED streetlight state checking and remote-control. In addition, we proved to improvement of expected effects for the power cost savings, the energy efficiency, and streetlight differentiation and advanced.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.