• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.403-406
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• 1998

Electroluminescence(EL) come from the light emission obtained by electrical excitation energy passing through a phosphor layer under applied high electrical field. The preparation and characterizations of light emitting ACPEL(alternating-current powder electroluminescent) cell based on two kinds of phosphor mixed ZnS:Mn, Cu and ZnS:Cu phosphor. Basic structure is ITO/Mixed Phosphor/insulator/Al sheet, each layer was mixed by binder, which concentration 11p for phosphor, 8p for insulator. Dielectric properties was investigated first and emission properties of P-LED based on ZnS:Mn,Cu/ZnS:Cu,Br mixture. Emission spectra exhibits two kinds of main peaks at 100V, 1kHz sinusoidal excitation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.467-468
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• 2006

We report on the fabrication of P3HT-based thin-film transistors (TFT) that consist of indium-zinc-oxide (IZO), PVP (poly-vinyl phenol), and Ni for the source-drain (S/D) electrode, gate dielectric, and gate electrode, respectively. The IZO S/D electrodes of which the work function is well matched to that of P3HT were deposited on a P3HT channel by thermal evaporation of IZO and showed a moderately low but still effective transmittance of ~25% in the visible range along with a good sheet resistance of ${\sim}60{\Omega}/{\square}$. The maximum saturation current of our P3HT-based TFT was about $15{\mu}A$ at a gate bias of -40V showing a high field effect mobility of $0.05cm^2/Vs$ in the dark, and the on/off current ratio of our TFT was about $5{\times}10^5$. It is concluded that jointly adopting IZO for the S/D electrode and PVP for gate dielectric realizes a high-quality P3HT-based TFT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.151-156
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• 2003

High temperature superconductor can only be applied against an engineering specofication that has to be determined for each particular application form the design requirements for economic viability and for operation margins in service. However, in order to realize the HTS transformer, it is necessary to establish the high voltage insulation technique in cryogenic temperature. Therefore, the composite insulation of double pancake coil type transformer are described and AC breakdown voltage characteristics of liquid nitrogen(LN$_2$) under HTS pancake coil electrode made by Bi-2223/Ag are studied. The Breakdown of LN$_2$ is dominated electrode shape and distance. The influence of pressure on breakdown voltage is discussed with th different electrode. For the electrical insulation design of turn-to-turn insulation for the HTS transformer, we tested breakdown strength of insulation sheet under varying pressure. And we investigated surface flashover properties of LN$_2$ and complex conition of cryogenic gaseous nitrogen(CGN$_2$) obove a LN$_2$ surface. The surface voltage of GFRP was measured as a function of thickness and electrode distance in LN$_2$ and complex condition of CGN$_2$ above a LN$_2$ surface. this research presented information of electrical insulation design for double pancake coil(DPC) type HTS transformer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.3-4
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• 2006

In this paper, a nickel silicide technology with post-silicidation annealing effect for thin film SOI devices is investigated in detail. Although lower resistivity Ni silicide can be easily obtained at low forming temperature, poor thermal stability and changing of characteristic are serious problems during the post silicidation annealing like ILD (Inter Layer Dielectric) deposition or metallization. So these effects are observed as deposited Ni thickness differently on As doped SOI (Si film 30nm). Especially, the sheet resistance of Ni thickness deposited 20nm was lower than 30nm before the post silicidation annealing. But after the post silicidation annealing, the sheet resistance was changed. Therefore, in thin film SOI MOSFETs or Ni-FUSI technology that the Si film is less than 50nm, it is important to decide the thickness of deposited Ni in order to avoid forming high resistivity silicide.

• Journal of Electrical Engineering and Technology
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• v.13 no.4
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• pp.1638-1643
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• 2018

Multi-layer ceramic capacitors as decoupling capacitor were fabricated by dielectric composition with a high dielectric constant. The fabricated decoupling capacitors were embedded in the PCB of the 10G RF transceiver module and evaluated for the characteristics of electrical noise by the level of AC input voltage. In order to further improve the electrical properties of the $BaTiO_3$ based composite, glass frit, MgO, $Y_2O_3$, $Mn_3O$, $V_2O_5$, $BaCO_3$, $SiO_2$, and $Al_2O_3$ were used as additives. The electrical properties of the composites were determined by various amounts of additives and optimum sintering temperature. As a result of the optimized composite, it was possible to obtain a density of $5.77g/cm^3$, a dielectric constant of 1994, and an insulation resistance of $2.91{\times}10^{12}{\Omega}$ at an additive content of 5wt% and a sintering temperature of $1250^{\circ}C$. After forming a $2.5{\mu}m$ green sheet using the doctor blade method, a total of 77 layers were laminated and sintered at $1180^{\circ}C$. A decoupling capacitor with a size of $0.6mm(W){\times}0.3mm(L){\times}0.3mm(T)$ (width, length and thickness, respectively) and a capacitance of 100 nF was embedded using a PCB process for the 10G RF Transceiver modules. In the range of AC input voltage 400mmV @ 500kHz to 2200mV @ 900kHz, the embedded 10G RF Transceiver modules evaluated that it has better electrical performance than the non-embedded modules.

• Journal of the Korea Computer Industry Society
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• v.5 no.2
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• pp.331-336
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• 2004

In this paper, an antenna for telematics is proposed. It operates at GPS/GSM frequency-bands and it can be installed inside of a vehicle. There is a great difference between the proposed antenna and commonly used antennas. It needs not to use a dielectric with a high permittivity since it is formed on a sheet of FR4 with only 1mm thickness. Thus, it is possible to cut costs and make process of manufacture simple. Planar inverted-F antenna(PIFA) for GSM and microstrip antenna(MSA) for GPS is designed and PIFA-MSA antenna is proposed. The height is lower than that of commonly used antennas. And polarization of the PIFA and MSA is arranged perpendicularly for isolation improvement of each port, thus isolation of these two antennas is improved. Also, it is sufficient for the all specifications.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.69-75
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• 2001

Photoimageable thick film technology is a new technology in that the lithography process such as exposure and development is applied to the conventional thick film process. Line resolution of 25 $\mu\textrm{m}$ width and 25 $\mu\textrm{m}$ space could be obtained by laminating green sheet, printing photoimageable Ag paste, exposing the test patterns, developing, and co-firing. In case of using the alumina substrate, 20 $\mu\textrm{m}$ fine line could be also obtained by similar process. Test results showed that exposing power density and developing time were the most important processing parameters for the fine line formation. Microstrip and series gap resonators with well-defined line morphology and good transmission characteristics in high frequency were formed by this new technology, and thereby dielectric constant and loss of test substrate were calculated.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.375-375
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• 2012

Graphene is a sp2-hybridized carbon sheet with an atomic-level thickness and a wide range of graphene applications has been intensely investigated due to its unique electrical, optical, and mechanical properties. In particular, hybrid graphene structures combined with various nanomaterials have been studied in energy- and sensor-based applications due to the high conductivity, large surface area and enhanced reactivity of the nanostructures. Conventional metal-catalytic growth method, however, makes useful applications difficult since a transfer process, used to separate graphene from the metal substrate, should be required. Recently several papers have been published on direct graphene growth on the two dimensional planar substrates, but it is necessary to explore a direct growth of hierarchical nanostructures for the future graphene applications. In this study, uniform graphene layers were successfully synthesized on highly dense dielectric nanowires (NWs) without any external catalysts. We also demonstrated that the graphene morphology on NWs can be controlled by the growth parameters, such as temperature or partial pressure in chemical vapor deposition (CVD) system. This direct growth method can be readily applied to the fabrication of nanoscale graphene electrode with designed structures because a wide range of nanostructured template is available. In addition, we believe that the direct growth growth approach and morphological control of graphene are promising for the advanced graphene applications such as super capacitors or bio-sensors.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.3
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• pp.7-11
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• 2011

In this paper, we proposed a simple and high-yield printing process for source and drain electrodes of organic thin film transistor (OTFT). The surface energy of PVP (poly 4-vinylphenol) gate dielectric was decreased from 56 $mJ/m^2$ to 45 $mJ/m^2$ by adding fluoride of 3000ppm into it. Meanwhile the surface energy of source and drain (S/D) electrodes area on the PVP was increased to 87 $mJ/m^2$ by treating the areas, which was patterned by photolithography, with oxygen plasma, maximizing the surface energy difference from the other areas. A conductive polymer, G-PEDOT:PSS, was deposited on the S/D electrode areas by brushing painting process. With such a simple process we could obtain a high yield of above 90 % in $16{\times}16$ arrays of OTFTs. The performance of OTFTs with the fluoride-added PVP was similar to that of OTFTs with the ordinary PVP without fluoride, generating the mobility of 0.1 $cm^2/V.sec$, which was sufficient enough to drive electrophoretic display (EPD) sheet. The EPD panel employing the OTFT-backpane successfully demonstrated to display some patterns on it.

• Journal of the Korean Magnetics Society
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• v.14 no.4
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• pp.131-137
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• 2004

For the aim of thin electromagnetic wave absorbers used in mobile telecommunication frequency band (0.8-2.0㎓), we investigate high-frequency magnetic, dielectric and microwave absorbing properties of iron particles dispersed in rubber matrix in this study. The major experimental variables are particle shape (sphere and flake) and initial particle size (in the range 5-70 $\mu\textrm{m}$) of iron powders. High value of magnetic permeability and dielectric permittivity can be obtained in the composites containing thin plate-shape (flake) iron particles (of which thickness is less than skin depth in ㎓frequency), which can be produced by mechanical forging of spherical iron powders using an attrition mill. This result is attributed to the reduction of eddy current loss (increase of permeability) and the increase of space charge polarization (increase of permeability). The optimum initial particle size is found to be about 10 $\mu\textrm{m}$ for the attainment of the material parameters (particularly, real part of complex permeability) satisfying the wave impedance matching. With the iron powders controlled in size and shape as absorbent fillers in rubber matrix, the thickness can be reduced to about 0.7mm with respect to -5㏈ reflection loss (70% power absorption) in mobile telecommunication frequency band.