• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.173-173
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• 2010

$Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

• Journal of the Korean Magnetics Society
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• v.18 no.4
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• pp.154-158
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• 2008

Magnetite($Fe_3O_4$) is currently one of key materials for applications in magnetic storage and many bioinspired applications because bulk $Fe_3O_4$ has a high Curie temperature($Tc={\sim}850K$) and nearly full spin polarization at room temperature(RT). In this work, $Fe_3O_4$ nanoparticles with different sizes of 12 to 15 nm were prepared in a well-controlled manner by a nonhydrolytic synthetic method. Here, we report the significant intergrain magneto-resistance(MR) of ${\sim}2%$ at RT in $Fe_3O_4$ nanoparticle pellets. The tunneling conductance was also investigated based on the Brinkman model, as well. Our results show clearly that the surface or interfacial property of the particles plays a crucial role in the MR effect.

• Journal of Magnetics
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• v.6 no.4
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• pp.122-125
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• 2001

Phase relationships of the HDDR (hydrogenation, disproportionation, desorption and recombination)-treated Sm$_3$(Fe,M)$_{29}$-type alloy with chemical composition of Sm$_{9}$Fe$_{65}$ $Co_{20}$V$_{6}$ were studied by X-ray diffraction (XRD) and by thermomagnetic analysis (TMA). The alloy was disproportionated into a mixture of $SmH_{x}$ and $\alpha$-Fe at high temperature under hydrogen gas. The disproportionated material was recombined into a mixture of Sm-(Fe,M) (M = Co and/or V) and $\alpha$-Fe phases. The structure of the Sm-(Fe,M) phase was dependent upon the recombination conditions, and a detailed phase diagram showing the phase relationships in the HDDR-treated alloy has been established. The Sm-(Fe,M) phase in material recombined above $900^{\circ}C$ had the $Sm_2Fe_{17}$-type structure, and it exhibited the $SmFe_{7}$-type structure when recombined at temperatures ranging from $700^{\circ}C$ to $850^{\circ}C$. Recombination below $650^{\circ}C$ led to the $SmFe_3$-type structure of the Sm-(Fe,M) phase. Curie temperatures of the Sm-(Fe,M) phases in the recombined material were significantly higher than those of the corresponding stoichiometric phases. It was suggested that the chemical composition of the Sm-(Fe,M) phases may be significantly different from that of the corresponding stoichiometric phases. All the HDDR-treated $Sm_{9}Fe_{65}Co_{20}V_{6}$ materials showed the soft magnetic features regardless of the phase constitution.n.

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.198-202
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• 2009

For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of $(1\;-\;x)Pb(Zr_{0.515}Ti_{0.485})O_3$ - $xPb(Sb_{1/2}Nb_{1/2})O_3$ + 0.5 wt% $MnO_2$ [(1 - x)PZT - xPSN + $MnO_2$] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at $1250^{\circ}C$ for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to $1.3{\mu}m$ by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+$MnO_2$ ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + $MnO_2$ system, exhibited good piezoelectric properties: a piezoelectric constant ($d_{33}$) of 325 pC/N, an electromechanical coupling factor ($k_p$) of 70.8%, and a mechanical quality factor ($Q_m$) of 1779. The specimens with a relatively high curie temperature ($T_c$) of $305^{\circ}C$ also showed a significantly high dielectric constant (${\varepsilon}_r$) value of 1109. Therefore, the 0.96PZT - 0.04PSN + $MnO_2$ ceramics are suitable for use in ultrasonic vibrators.

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.89-93
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• 2009

Amorphous $Ge_{1-x}Mn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed, and their electrical and magnetic properties have been studied. The amorphous thin films were $1,000{\sim}5,000\;{\AA}$ thick. Amorphous $Ge_{1-x}Mn_x$ thin films were annealed at $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$ and $700^{\circ}C$ for 3 minutes in high vacuum chamber. X-ray diffraction analysis reveals that as-grown $Ge_{1-x}Mn_x$ semiconductor thin films are amorphous and are crystallized by annealing. Crystallization temperature of amorphous $Ge_{1-x}Mn_x$ semiconductor thin films varies with Mn concentration. Amorphous $Ge_{1-x}Mn_x$ thin films have p-type carriers and the carrier type is not changed during annealing, but the electrical resistivity increases with annealing temperature. Magnetization characteristics show that the as-grown amorphous $Ge_{1-x}Mn_x$ thin films are ferromagnetic and the Curie temperatures are around 130 K. Curie temperature and saturation magnetization of annealed $Ge_{1-x}Mn_x$ thin films increase with annealing temperature. Magnetization behavior and X-ray analysis implies that formation of ferromagnetic $Ge_3Mn_5$ phase causes the change of magnetic and electrical properties of annealed $Ge_{1-x}Mn_x$ thin films.

• Journal of the Korean Magnetics Society
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• v.5 no.4
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• pp.269-274
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• 1995

The basic composition of Mn-Zn ferrite was $Mn_{0.631}Zn_{0.316}Fe_{2.053}O_{4}$(specimen A), $Mn_{0.584}Zn_{0.312}Fe_{2.104}O_{4}$(specimen B) and $Mn_{0.538}Zn_{0.308}Fe_{2.154}O_{4}$(specimen C) with additional 0.1 mol % $CaCo_{3}$ and 0.04 mol % $V_{2}O_{5}$. For high per¬meability and acceleration of grain growth, $CaCo_{3}$ and $V_{2}O_{5}$. was added. The mixture of the law materials was calcinated at $950^{\circ}C$ for 3 hours and then milled. The compacts of toroidal type were sintered at different temperature($1250^{\circ}C$, $1300^{\circ}C$, $1350^{\circ}C$) for 2 hours in $N_2$ atmosphere. The effects of the various raw material composition and sintered temperature on the physical properties of Mn-Zn ferrite have been investigated. They turned out to be spinel structure by X-ray diffraction and the size of grain from SEM was from $18\;\mu\textrm{m}\;to\;23\;\mu\textrm{m}$. As the sintering temperature was increased from $1250^{\circ}C$ to $1350^{\circ}C$, the initial permeability and magnetic induction has increased and the both of Q factor and coercive force has decreased. The coercive force and curie temperature were almost the same at each specimen Their values were about 0.45 Oe and $200^{\circ}C$. The frequency of specimen will used in the range from 200 kHz to 2 MHz. The basic composition of $Mn_{0.584}Zn_{0.312}Fe_{2.104}O_{4}$(specimen B) sintered at $1300^{\circ}C$ shows the best results at magnetic induction (Br & Bm).