• Journal of Powder Materials
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• v.13 no.2 s.55
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• pp.129-137
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• 2006

In this study, high purity fine $BaTiO_3$ powders were prepared by SHS (Self-propagating High-temperature Synthesis). We would examinate the study of sintering properties and characteristics as a function of temperature with various additives (binder, sintering agent). In separately binder addition, the green and sintered density of specimen were increased as binder content increases. The increased porosity resulted in fine grain size due to the inhibition of grain boundary moving. The $Al_{2}O_{3},\;TiO_{2}$ and MgO playa role of increasing dielectric constants at room temperature. These values were decreased at curie temperature. In case of $SiO_2$, the Curie temperature was decreased. In this study, a high dielectric ceramic capacitor material with temperature stability was synthesized by using various additives.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.8
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• pp.392-398
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• 2006

The properties of tunable dielectric materials on RF frequency band are important high tunability and low loss for RF variable devices, variable capacitor, phased array antenna and other components application. Various composite of BST(barium strontium titanate) ratio combined with other non-electrical active oxide ceramics have been formulated for such uses. We present the tunable properties and Curie temperature on BST thick films. The grain growth of the weight ratio of $BaTiO_3$ increased. This can be explained by the substitute $Sr^{2+}$ ion for $Ba^{2+}$ ion in the $BaTiO_3$ system. The Curie temperature was shifted to lower temperature with increasing $SrTiO_3$in the $BaTiO_3-SrTiO_3$ system, because of decreasing the lattice constant. Also, the dielectric constant, tunability and K-factor of $(Ba_xSr_{1-x})TiO_3$ at over the Curie temperature decreased, at over the $60^{\circ}C$ fixation, maximum dielectric constant at Curie temperature and hence sharper phase transformation occurred at Curie temperature. The result were interpreted as a process of internal stress relaxation resulting form the increase of $90^{\circ}$ domains induced the BST. As a result, It is concluded that over the Curie temperature, frequency response and DC field effect for the tunable properties of BST thick film are suppressed by the transition broadening. For the application of tunable devices, that the curie temperature was investigated to be increased.

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.158-164
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• 1995

Solid solutions Sr$_{2}$(Ta$_{1-x}$ Nb$_{x}$)$_{2}$O$_{7}$, (x=0.0-1.0), composed of strontium tantalate(Tc=-107.deg. C) and strontium-niobate(Tc=1342.deg. C) were prepared by the conventional mixed oxide method and the flux method(molten salt synthesis method). Phase relation, sintering temperature, grain-orientation and dielectric properties for sintered ceramic samples were investigated with different compositions. Both Curie temperature and dielectric constant at Curie temperature were increased, and sintering behavior and the degree of grain-orientation were improved with the increase of Nb content. The single phase Sr$_{2}$(Ta/sib 1-x/Nb$_{x}$)$_{2}$O$_{7}$ powder was synthesized by using the flux method at lower temperatures, and sintering temperature was also reduced by using the flux method-derived powder than using the mixed oxide-derived powder. Sintering characteristics and dielectric properties of the specimens prepared by the flux method were better than those derived through the conventional mixed oxide method.thod.hod.

• Proceedings of the KIEE Conference
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• 1995.07a
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• pp.104-106
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• 1995

A curious resistivity anomaly in high curie point barium-lead-titanate materials with positive temerature coefficient of resistivity (PTCR) has been observed just below the curie point, besides the normal PTCR anomaly. The additional resistivity anomaly was observed in the resistivity-temperature characteristics.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.380-382
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• 1995

The pressure dependence of the Curie temperature was determined in 2-dimensional like ferromagnet, MnAlGe up to a maximum pressure of 7.5 Gpa through measurements of electric resistance vs temperature curves. The pressure coefficient was positive with a considerably high rate of 9 K/GPa in the low pressure ragion, while it decreased gradually down to one order of magnitude smaller value at the maximum pressure. It was concluded that ther is an upper limit of about 550 K in the super-exchange type ferromagnetic interaction between Mn layers.

• Electrical & Electronic Materials
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• v.9 no.4
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• pp.415-421
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• 1996

본 고에서는 고온센서용 압전체가 필요하고 실용화할 수 있는 다결정 압전세라믹스 및 박막재료가 요구되는 점을 감안하여 고온에서도 사용할 수 있는 단결정 $A_{2}$B$_{2}$O$_{2}$형의 성장과 그 전기적 특성 및 최근 개발을 시도하고 있는 다결정 $A_{2}$B$_{2}$O$_{2}$형 압전체에 대한 지금까지의 개발동향을 문헌소개와 함께 필자의 연구결과 일부도 보고하며 아울러 박막화의 가능성도 제시하고자 한다.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.640-647
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• 1995

In this study, the BaTiO$\sub$3/ capacitor add to MnO$\sub$2/ like depressor and shifter were investigated for temperature or voltage compensation by structural and electrical analysis. The relative density of BCTM, generating poly crystall and formation of lattice defect, has a 90[%] over as the CaTiO$\sub$3/ come out to control grain size. The current density of BCTM2 increased non-ohmic in high-electric field but that BCTM3 and BCTM4 had a few changing. The BCTM3 and BCTM4 unformated grain boundary shown temperature compensation properties, so that the dielectric constant was low value. The curie point was near 140[.deg. C] in BCTM1 and BCTM4, but BCTM3 and BCTM4 not shown the curie point. It is found that the charging energy of BCTM4 was changed 6[%] according to rising temperature from room temperature to 417[K]. The formation of BaMnO$\sub$3/ was low dielectric constant to change frequency and temperature.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.19-19
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• 2003

The injection of spins into nonmagnetic semiconductors has recently attracted great interest due to the potential to create new classes of spin-dependent electronic devices. A recent strategy to achieve control over the spin degree of freedom is based on dilute ferromagnetic semiconductors. Ferromagnetism has been reported in various semiconductor groups including II-Ⅵ, III-V, IV and II-IV,-V$_2$, which will be reviewed. On the other hand, to date the low solubility of magnetic ions in non-magnetic semiconductor hosts and/or low Curie temperature have limited the opportunities. Therefore the search for other promising ferromagnetic semiconducting materials, with high magnetic moments and high Curie temperatures (Tc), is of the utmost importance. In this talk, we also introduce new pure ferromagnetic semiconductors, MnGeP$_2$ and MnGeAs$_2$, exhibiting ferromagnetism and a magnetic moment per Mn at 5K larger than 2.40 ${\mu}$B. The calculated electronic structures using the FLAPW method show an indirect energy gap of 0.24 and 0.06 eV, respectively. We have observed spin injection in MnGeP$_2$ and MnGeAs$_2$ magnetic tunnel junctions through semiconducting barriers.

• Korean Journal of Materials Research
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• v.26 no.1
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• pp.35-41
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• 2016

The electrical transport properties of $La_{0.5}Sr_{0.5}CrO_3$ below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below $T_c$, $La_{0.5}Sr_{0.5}CrO_3$ contains a dielectric relaxation process in the tangent loss and electric modulus. The $La_{0.5}Sr_{0.5}CrO_3$ involves the transition from high temperature thermal activated conduction process to low temperature one. The transition temperature corresponds well to the Curie point. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The low temperature conduction and relaxation takes place in the ferromagnetic phase. The ferromagnetic state in $La_{0.5}Sr_{0.5}CrO_3$ indicates that the electron - magnon interaction occurs, and drives the carriers towards localization in tandem with the electron - lattice interaction even at temperature above the Curie temperature.

• Journal of the Korean Ceramic Society
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• v.27 no.6
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• pp.741-746
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• 1990

Dielectrics which do not lose their high insulation resistance in reducing atmosphere are necessary for multilayer ceramic capacitors with Ni internal electrode. In this study we investigated the Ca ion site occupancy in A-site excess Ca-doped BaTiO3 by measuring the insulation resistance, lattice constant and Curie temperature. Its Curie temperature, which was lower than that of the pure BaTiO3, was more lowered by sintering in reducing atmosphere. Lattice constnat of c-axis decreased and that of a-axis increased, suggesting substitution of Ca ions for Ti ions. Hence CaTi" acts as an acceptor to maintain high insulation resistance.ance.