• Composites Research
• /
• v.32 no.6
• /
• pp.301-306
• /
• 2019

Triboelectric nanogenerator (TENG) is one of the energy harvesting methods in spotlight that can convert mechanical energy into electricity. As TENGs produce high electrical output, previous studies have shown TENGs that can power small electronics independently. However, recent studies have reported limitations of TENG due to air breakdown and field emission. In this study, we developed a triboelectric nanogenerator that utilizes the metal-to-metal surface contact to induce ion-enhanced field emission and electron avalanche for electrons to flow directly between two electrodes. The average peak open-circuit voltage of this TENG was measured as 340 V, and average peak closed-circuit current was measured as 10 mA. The electrical output of this TENG has shown different value depending on the surface charge of surface charge generation layer. The TENG developed in this study have produced RMS power of 0.9 mW, which is 2.4 times higher compared to conventional TENGs. The TENG developed in this study can be utilized in charging batteries and capacitors to power portable electronics and sensors independently.

• Journal of Animal Science and Technology
• /
• v.46 no.5
• /
• pp.871-878
• /
• 2004

Pulsed electric fields(PEF) technology is one of the latest nonthermal methods of food processing for obtaining safe and minimally processed foods. This technology can be effectively explored for obtaining safe food with minimum effect on nutritional, flavor, rheological and sensory qualities of food products. The process involves the application of high voltage(typically 20 ${\sim}$ 80 kv/cm) to foods placed between two electrodes. The mode of inactivation of microorganism; by PEP processing has been postulated in term; of electric breakdown and electroporation. The extent of destruction of microorganisms in PEF processing depends mainly on the electric field strength of the pulses and treatment time. For each cell types, a specific critical electric field strength and specific critical treatment time are required depending on the cell characteristics and the type and strength of the medium where they have been present. The effect also depends on the types of microorganisms and their phase of growth. A careful combination of processing parameters has to be selected for effective processing. The potential applications of PEF technology are numerous ranging from biotechnology to food preservation. With respect to food processing, it has already been established that, the technology is non-thermal in nature, economical and energy efficient, besides providing minimally processed foods. This article gives a brief overview of this technology for food processing applications.

• Journal of Platform Technology
• /
• v.8 no.3
• /
• pp.10-21
• /
• 2020

Partial discharge occurs a lot in high-voltage power equipment such as switchgear, transformers, and switch gears. Partial discharge shortens the life of the insulator and causes insulation breakdown, resulting in large-scale damage such as a power outage. There are several types of partial discharge that occur inside the product and the surface. In this paper, we design a predictive model that can predict the pattern and probability of occurrence of partial discharge. In order to analyze the designed model, learning data for each type of partial discharge was collected through the UHF sensor by using a simulator that generates partial discharge. The predictive model designed in this paper was designed based on CNN during deep learning, and the model was verified through learning. To learn about the designed model, 5000 training data were created, and the form of training data was used as input data for the model by pre-processing the 3D raw data input from the UHF sensor as 2D data. As a result of the experiment, it was found that the accuracy of the model designed through learning has an accuracy of 0.9972. It was found that the accuracy of the proposed model was higher in the case of learning by making the data into a two-dimensional image and learning it in the form of a grayscale image.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.33 no.2
• /
• pp.83-90
• /
• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.34 no.4
• /
• pp.109-116
• /
• 2024

β-Ga₂O₃ is a representative ultra-wide bandgap (UWBG) semiconductor that has attracted much attention for power device applications due to its wide-bandgap of 4.9 eV and high-breakdown voltage of 8 MV/cm. In addition, because solution growth is possible, it has advantages such as fast growth rate and lower production cost compared to SiC and GaN [1-2]. In this study, we have successfully grown Si-doped 10 mm thick Si-doped β-Ga₂O₃ single crystals by the EFG (Edge-defined Film-fed Growth) method. The growth direction and growth principal plane were set to [010] / (010), respectively, and the growth speed was 7~20 mm/h. The as-grown β-Ga₂O₃ single crystal was cut into various crystal planes (001, 100, ${\bar{2}}01$) and off-angles (1^o, 3^o, 4^o), and then surface processed. After processed, the homoepitaxial layer was grown on the epi-ready substrate using the HVPE (Halide vapor phase epitaxy) method. The processed samples and the epi-layer grown samples were analyzed by XRD, AFM, OM, and Etching to compare the surface properties according to the crystal plane and off-angle.