• Economic and Environmental Geology
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• v.30 no.5
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• pp.417-431
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• 1997

Characteristics of sedimentary rocks and enrichment of toxic elements in shale and coal from the Chungnam coal field were investigated based upon geochemistry of major, trace and rare earth elements. Shale and coal of the area are interbedded along the Traissic to the Jurassic Daedong Supergroup, which can be subdivided into grey shale, black shale and coal. The coal had been mined, however all the mines are abandonded due to the economic problems. The shale and coal are characterized by relatively low contents of $SiO_2$, and $Al_2O_3$ and high levels of loss-on-ignition (LOI), CaO and $Na_2O$ in comparison with the North American Shale Composite (NASC). Light rare earth elements (La, Ce, Yb and Lu) are highly enriched with the coal. Ratios of $Al_2O_3/Na_2O$ and $K_2O/Na_2O$ in shale and coal range from 30.0 to 351.8 and from 4.2 to 106.8, which have partly negative correlations against $SiO_2/Al_2O_3$ (1.24 to 6.06), respectively. Those are suggested that controls of mineral compositions in shale and coal can be due to substitution and migration of those elements by diagenesis and metamorphism. Shale and coal of the area may be deposited in terrestrial basin deduced from high C/S (39 to 895) and variable composition of organic carbon (0.39 to 18.40 wt.%) and low contents of reduced sulfur (0.01 to 0.05 wt.%). These shale and coal were originated from the high grade metamorphic and/or igneous rocks, and the rare earth elements of those rocks are slightly influenced with diagenesis and metamorphism on the basis of $Al_2O_3$ versus La, La against Ce, Zr versus Yb, the ratios of La/Ce (0.38 to 0.85) and Th/U (3.6 to 14.6). Characteristics of trace and rare earth elements as Co/Th (0.07 to 0.86), La/Sc (0.31 to 11.05), Se/Th (0.28 to 1.06), V/Ni (1.14 to 3.97), Cr/V (1.4 to 28.3), Ni/Co (2.12 to 8.00) and Zr/Hf (22.6~45.1) in the shale and coal argue for inefficient mixing of the simple source lithologies during sedimentation. These rocks also show much variation in $La_N/Yb_N$ (1.36 to 21.68), Th/Yb (3.5 to 20.0) and La/Th (0.31 to 7.89), and their origin is explained by derivation from a mixture of mainly acidic igneous and metamorphic rocks. Average concentrations in the shale and coal are As=7.2 and 7.5, Ba=913 and 974, Cr=500 and 145, Cu=20 and 26, Ni=38 and 35, Pb=30 and 36, and Zn=77 and 92 ppm, respectively, which are similar to those in the NASC. Average enrichment indices for major elements in the shale (0.79) and coal (0.77) are lower than those in the NASC. In addition, average enrichment index for rare earth elements in coal (2.39) is enriched rather than the shale (1.55). On the basis of the NASC, concentrations of minor and/or environmental toxic elements in the shale and coal were depleted of all the elements examined, excepting Cr, Pb, Rb and Th. Average enrichment indices of trace and/or potentially toxic elements (As, Cr, Cu, Ni, Pb, U and Zn) are 1.23 to 1.24 for shale and 1.06 to 1.22 for coal, respectively.

• Economic and Environmental Geology
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• v.39 no.6 s.181
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• pp.675-687
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• 2006

The purpose of this study is to determine the geochemical characteristics of the stream sediments in the Cheongpung area. So that we can understand the natural background and predict the prospects of geochemical disaster, if any. We collected the stream sediments samples by wet sieving along the primary channels and slow dried the collected samples in the laboratory and ground them to pass a 200 mesh using an alumina mortar and pestle for chemical analysis. Miner-alogical characteristics, major, trace and rare earth elements were determined by XRD, XRF, ICP-AES and NAA analysis methods. For geochemical characteristics on the geological group of stream sediments, the studied area was grouped into granitic gneiss area, metatectic gneiss area, Dado tuff area, Yuchi conglomerate area, and Neungju flow area in the Cheongpung area. Contents of major elements for the stream sediments in the Cheongpung area were $SiO_2\;47.31{\sim}72.81\;wt.%,\;A1_2O_3 \;11.26{\sim}21.88\;wt.%,\;Fe_2O_3\;2.83{\sim}8.39\;wt.%,\;CaO\;0.34{\sim}7.54\;wt.%,\;MgO\; 0.55{\sim}3.59\;wt.%,\;K_2O\;1.71{\sim}4.31\;wt.%,\;Na_2O\;0.56{\sim}2.28\;wt.%,\;TiO_2\;0.46{\sim}1.24\;wt.%,\;MnO\;0.04{\sim}0.27\;wt.%,\;P_2O_5\;0.02{\sim}0.45\;wt.%$. The con-tents of trace and rare earth elements for the stream sediments were $Ba\;700ppm{\sim}8990ppm,\;Be\;1.0{\sim}3.50ppm,\;Cu\;6.20{\sim}60ppm,\;Nb\;12{\sim}28ppm,\;Ni\;4.4{\sim}61ppm,\;Pb\;13{\sim}34ppm,\;Sr\;65{\sim}787ppm,\;V\;4{\sim}98ppm,\;Zr\;32{\sim}164ppm,\;Li\;21{\sim}827ppm,\;Co\;3.68{\sim}65ppm,\;Cr\;16.7{\sim}409ppm,\;Cs\;2.72{\sim}37.1ppm,\;Hf\;4.99{\sim}49.2ppm,\;Rb\;71.9{\sim}649ppm,\;Sb\;0.16{\sim}5.03ppm,\;Sc\;4.97{\sim}52ppm,\;Zn\;26.3{\sim}375ppm,\;Ce\;60.6{\sim}373ppm,\;Eu\;0.82{\sim}6ppm,\;Yb\;0.71{\sim}10ppm$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Clean Technology
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• v.9 no.2
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• pp.57-61
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• 2003

A novel nitric acid-free desmut solution has been developed to remove smut, which is produced from a NaOH etching, on the surface of aluminum alloy metal in metal surface treatment processes. Comparing with the performance of 5% $HNO_3$ desmut solution, the mixed acid solution containing 2% $H_2O_2$, 0.5% HF, and 10% $H_2SO_4$ shows the same effect of smut removal for aluminum alloy samples of A16061 and A15052. To examine the surface alterations of the aluminum samples, in addition, the surface analysis is carried out with scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).

• Journal of Powder Materials
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• v.10 no.5
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• pp.344-347
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• 2003

Pure tantalum powder has been produced by combining Na as a reducing agent, $K_2$TaF$_{7}$ as feed material, KCl and KF as a diluent in a stainless steel (SUS) bomb, using the method of metallothermic reduction. And we examined various types of after-treatment that affect the high purification of powder. A significant amount of impurities contained in recovered powder was removed in various conditions of acid washing. In particular, 20% (HCl + HNO$_3$) was effective in removing heavy metal impurities such as Fe, Cr and Ni, 8% H$_2$SO$_4$ + 8% $Al_2$(SO$_4$)$_3$ in removing fluorides such as K and F from non-reactive feed material, and 2% $H_2O$$_2$ + 1 % HF in removing oxides that formed during reaction. Significant amounts of oxygen and part of light metal impurities could be removed through deoxidation and heat treatment process. On the other hand, because it is difficult to remove completely heavy metal impurities such as Fe, Cr, and Ni through acid washing or heat treatment process if their contents are too high, it is considered desirable to inhibit these impurities from being mixed during the reduction process as much as possible.

• Journal of Dental Rehabilitation and Applied Science
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• v.26 no.3
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• pp.339-347
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• 2010

Enhancement of bond strength between new and old composite usually requires increasing the surface roughness to promote mechanical interlocking. This study evaluated the effect of different surface treatments on repair bond strength of resin composite after aging condition. Air abrasion with Al2O3, chairside silicacoating, and silanization provided higher resin-resin bond strength values compared to control group and HF group. Air abrasion is necessary to repair a resin restoration and additional application of silane seems to have good effects on bond strength.

• Corrosion Science and Technology
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• v.2 no.1
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• pp.53-57
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• 2003

The MarM247 based superalloy (8wt.%Cr- 9wt.%Co- 3wt.%Ta- 1.5wt.%Hf- 5.6%wt.Al- 9.5wt.%W- Bal. Ni) specimens were diffusion aluminized by for types of pack cementation methods, and their coating structure and their high temperature oxidation resistance were investigated. The coated specimens treated at 973K in high aluminum concentration pack had a coating layer containing large hafunium rich precipitates, which were originally included in substrate alloy. After the high temperature oxidation test in air containing 30 vol.% $H_2O$ at 1273K ~ 323K, the deep localized corrosion which reached to the substrate were observed along with these hafnium rich precipitates. On the other hand, the coated specimens treated at 1323K using low aluminum concentration pack showed the coating layer without the large hafunium rich precipitates, and after the high temperature oxidation test at 1273K for 1800 ksec, it did not show the deep localized corrosion. The nickel electroplating before the aluminizing forms thick hafnium free area, and its high temperature oxidation resistance were comparable to platinum modified aluminizing coatings at 1273K.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.24-24
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• 1998

반도체장비를 포함하는 초고진공장비의 園훌化가 급속히 그리고 절실히 요구되고 있는 것이 현실정이다. 當面해서 실현할 국산진공장비의 대상은 廣範圍하다. 즉, 각종 진공 pump ( (rotary, dry, diffusion, cryo, ion, turbo melecular pump), 진공 chamber, 진공 line, gate valve 를 위 시 한 진공 V머ve, flange, gasket, fl않d야lU, mainpulater 퉁 진공 部品이 다. 진공계 의 핵심 은 適切하고 優良한 진공재료의 선태파 사용이다. 진공장비는 사용자가 원하는 진공도를 원하 는 시간 동안 륨空度를 유지해 주어야 한다. 진공재료 선태의 기준사항은:(1) 기체의 透過성 (2) 薰했훌 (3) 혔體放出특성 - -outgassing과 degassing- (4) 機械的 량훌度 (5) 온도 의존성 (6) 化學톡성 (7) 加I성 및 鎔接 성 (8) 課電특성 (9) 磁氣특성 (10) 高速함子 및 放射線 특성 (11) 經濟성 및 調達생 둥이 다. 우량한 초고진공계재료는 풍부하게 개발되어 왔고, 또 新材料들이 개발되고 있다. 여기에서는 주로 초고진공 내지는 극고진공계의 構造材料, 機能材料, 部品材料 일반파 몇가지 신재료의 특 성에 관해서 記述한다. M Mild SteeHSAE, 1112, 1010, 1020, 1022, etc)., S Stainless SteeHAlSI, 304, 304L, 310, 316, 321, 347): 구조재료, chamber, fl하1ges A Aluminum과 Alloys (1060, 1100, 2014, 4032, 6(뻐1): 구조재료, chamber, flanges, gaskets A AI, Al 떠loy는 SS에 代替하는 역 할올 시 작하고 있다. C Copper, Copper Alloys(C11$\alpha$)0, C26800, C61400, Cl7200): 내장인자, gasket, cryopanel, tubing T Titanium, Ziriconium, Haf띠um 및 Alloys: 특히 Ti은 10n pump 용 getter material 이 외 에 U UHV,XHV용 chamber계로서 관심올 끌고 있다. N Nickel, Nickel Alloys (200, 204, 211, monel, nichrome): 부식 방지 , 전자장치 , 자기 장치 귀 금속(Ag, Au, Pt, Pd, Rh, Ir, Os, Ru): 보조부품, gasket, filament, coating, thermocouple, 접 합부위 T TiC, SiC, zrC, HfC, TaC 둥의 탄화물과, BN, TiN, AlN 동의 질화물, 붕화물이 둥장하고 었 다. 유리: Soda Lime, Borosilicate, Potash Soda Lead: View Port, Chamber envelope C Ceramics: AlZ03, BeO, MgO, zrOz, SiOz, MgOzSiOz, 3Alz032SiOz, Z$textsc{k}$hSiOz S상N4: e electrical, thermal insulators, crucibles, boats, single crystals, sepctr려 windows 저자는 최근 저자들이 발견한 Zr-Ti-Cu-Ni-Be amorphous alloys coated cham뾰r가 radiation p proof로 이용될 수 있는 사실을 점검하고 었다 .. Z.Y. Hua 들은 Cs3Sb를 새로운 photocathode 재료로 보고하고 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.454-454
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• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.115-115
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• 1999

GaN는 직접천이형 wide band gap(3.4eV) 반도체로서 청색/자외선 발광소자 및 고출력 전자장비등에의 응용성 때문에 폭넓게 연구되고 있다. 이러한 넓은 분야의 응용을 위해서는 열 적으로 안정된 Ohmic contact을 반드시 실현되어야 한다. n-type GaN의 경우에는 GaN계면에서의 N vacancy가 n-type carrier로 작용하기 때문에 Ti, Al, 같은 금속을 접합하여 nitride를 형성함에 의해서 낮은 접촉저항을 갖는 Ohmic contact을 하기가 쉽다. 그러나 p-type의 경우에는 일 함수가 크고 n-type와 다르게 nitride가 형성되지 않는 금속이 Ohmic contact을 할 가능성이 많다. 시료는 HF(HF:H2O=1:1)에서 10분간 초음파 세척을 한 후 깨끗한 물에 충분히 헹구었다. 그런 후에 고순도 Ar 가스로 건조시켰다. Pd와 Ni은 열적 증착법(thermal evaporation)을 사용하여 p-GaN에 상온에서 증착하였다. 현 연구에서는 열처리에 의한 Pd의 clustering을 줄이기 위해서 wetting이 좋은 Ni을 Pd 증착 전과 후에 삽입하였으며, monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy)을 사용하여 열처리 전과 40$0^{\circ}C$, 52$0^{\circ}C$ 그리고 695$0^{\circ}C$에서 3분간 열처리 후의 온도에 따른 morphology 변화, 계면반응(interfacial reaction) 및 벤드 휨(band bending)을 비교 연구하였다. Nls core level peak를 사용한 band bending에서 Schottky barrier height는 Pd/Ni bi-layer 접합시 2.1eV를, Ni/Pd bi-layer의 경우에 2.01eV를 얻었으며, 이는 Pd와 Ni의 이상적인 Schottky barrier height 값 2.38eV, 2.35eV와 비교해 볼 때 매우 유사한 값임을 알 수 있다. 시료를 후열처리함에 의해 52$0^{\circ}C$까지는 barrier height는 큰 변화가 없으나, $650^{\circ}C$에서 3분 열처리 후에 0.36eV, 0.28eV 만큼 band가 더 ？을 알 수 있었다. Pd/Ni 및 Ni/Pd 접합시 $650^{\circ}C$까지 후 열 처리 과정에서 계면에서 matallic Ga은 온도에 비례하여 많은 양이 형성되어 표면으로 편석(segregation)되어지나, In-situ SAM을 이용한 depth profile을 통해서 Ni/Pd, Pd/Ni는 증착시 uniform하게 성장함을 알 수 있었으며, 후열처리 함에 의해서 점차적으로 morphology 의 변화가 일어나기 시작함을 볼 수 있었다. 이는 $650^{\circ}C$에서 열처리 한후의 ex-situ AFM을 통해서 재확인 할 수 있었다. 이상의 결과로부터 GaN에 Pd를 접합 시 심한 clustering이 형성되어 Ohoic contact에 문제가 있으나 Pd/Ni 혹은 Ni/Pd bi-layer를 사용함에 의해서 clustering의 크기를 줄일 수 있었다. Clustering의 크기는 Ni/Pd bi-layer의 경우가 작았으며, $650^{\circ}C$ 열처리 후에 barrier height는 Pd/Ni bi-layer의 경우에도 Ni의 영향을 받음을 알 수 있었다.