• Bulletin of the Korean Chemical Society
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• v.31 no.9
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• pp.2565-2570
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• 2010

The orthorhombic $MgB_2C_2$ structure contains well-separated parallel graphite-like $B_2C_2^{2-}$ layers which extend infinitely in two dimensions. Three possible ways to distribute B and C atoms in the hexagonal sublattice sites are adopted. Band structures for the hypothetical distribution patterns are examined to assess the electronic stability of these phases and to account for the observed arrangement by means of extended Huckel tight-binding calculations. The preferred choice is the layer with B and C alternating strictly so that B is nearest neighbor to C and vice versa. A rationale for this is given. Due to the alternation of B and C within the honeycomb layers, $MgB_2C_2$ is a band insulator, which through partial substitution of Mg with Li, is predicted to turn metallic with holes in the $\sigma$ bands at the Fermi level.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.8
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• pp.670-677
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• 2012

In this paper, mechanical property of biomorphic C/SiC composite was calculated by unit cell analysis. The microstructural arrangements of carbonized pine and radiata pine which were impregnated with silicon, were idealized as square and hexagonal arrays. Unit cell was then defined and equivalent elastic constants were calculated. A single and double unit cell structures were considered. The effect of void distribution was also studied by monte carlo simulation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.292-292
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• 2010

Among the semiconducting materials, ZnO has considerably attracted attention over the past few years due to the high activities in removing organic contaminants created from industry. In this work, ZnO nanoparticles were synthesized by spray pyrolysis method using the zinc acetate dihydrate as starting material at various synthesis temperatures. The structures of the synthesized ZnO were characterized by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Brunauer, Emmett & Teller (BET), Fourier Transformation Infrared (FT-IR), and UV-vis spectroscopy. The Miller indices of XRD patterns indicate that the synthesized ZnO nanoparticles showed a hexagonal wurtzite structure. With increasing synthesis temperature, the mean diameter of ZnO nanoparticles increased, and their crystallinity was improved. Also, the photocatalytic activity of ZnO was studied by the photocatalytic degradation of methyleneblue (MB) under UV irradiation (365 nm) at room temperature. The results show that the photocatalytic efficiency of ZnO nanoparticles was enhanced by increasing synthesis temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.149-149
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• 2011

CdS films were deposited on glass substrates by R.F. magnetron sputtering method and the films were annealed at various substrate temperatures ranging from room temperature to $300^{\circ}C$. Structural properties of the films were studied by X-ray diffraction analysis. The structural parameters as crystallite size have been evaluated. The crystallite sizes were found to increase, and the X-ray diffraction patterns were seen to sharpen by increasing substrate temperatures. X-ray diffraction patterns of these films indicated that they contain both cubic (zincblende) and hexagonal (wurtzite) structures as a mixture. Optical properties of the films were measured at room temperature by using UV/VIS spectrometer in the wavelength range of 190 to 1100nm and optical absorption coefficients were calculated using these data. The energy gap of the films was found to decrease, and the band edge sharpness of the optical absorption was seen to oscillate by annealing. The results show that heat treatments under optimal annealing condition can provide significant improvements in the properties of CdS thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.306-306
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• 2011

Three dimensional(3D) topological insulators(TIs) of Bi binary alloys are characterized by a bulk energy gap with strong spin-orbit coupling and metallic surface states protected by time-reversal symmetry. It was reported that film forms of such materials were advantageous over bulk forms due to less defect density and better crystallinity. So far, the films have been prepared on several substrates including semiconductors and graphene. But, there were no studies on metal substrates. For electronic transport experiments and device applications, it is necessary to know epitaxial relation between TIs and metal electrodes. In this study, Atomically flat films of Bi2Se3 were grown on a Au(111) metal substrate by in-situ molecular beam epitaxy. Using home-built scanning tunneling microscope, we observed hexagonal atomic structures which corresponded to the outmost selenium atomic layer of Bi2Se3. Triangular-shaped defects known as Selenium vacancy were also found.

• Journal of the Korean institute of surface engineering
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• v.18 no.4
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• pp.164-183
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• 1985

The microstructure of the zinc electrodeposits was investigated by changing the flow rate of electrolyte in zinc sulfate Bath. The cathode current efficiency increased with increasing flow rate of electrolyte. The preferred orientation of zinc electrodeposit changed from (11.2) texture to (10.3) or (10.1)+(10.2) texture with increasing current density in the range of flow rate, 0.2-1.2m/sec. The morphology of the deposits changed from the sponge deposit to the blocks of hexagonal crystallites packed together through the structures of find polycrystallite with increasing current density. The microstructure of the cross-section of the above deposits are granular structure and columnar structure respectively. The surface roughness of zinc electrodeposits decreased with increasing current density and flow rate of electrolyte.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.239-243
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• 2008

In this study, Bi-Sb thin film structure was prepared by thermal evaporation method. The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process. At temperature of $500^{\circ}C$, the absorption of the structure was improved to reach 97% at near-infrared region. As well, the thermal annealing caused to reduce the bulk resistance of the Bi-Sb thin film structure. The morphology of Bi-Sb structure was also improved by thermal annealing as characteristic islands of the structure appear clearly in form hexagonal areas distinct from each other. This study is aiming to examine such structures if they are employed as photonic devices such as photodetectors, LED's and optical switches.

• Earthquakes and Structures
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• v.16 no.3
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• pp.253-263
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• 2019

The efficacy of a galvanized steel wire mesh (GSWM) as an alternative material for the rehabilitation of RC beam-column connections damaged due to reversed cyclic loading was investigated. The repair mainly uses epoxy resin infused under pressure into the damaged zone and then confined using three types of locally available GSWM mesh. The mesh types used herein are (a) Weave type square mesh with 2mm grid opening (GWSM-1) (b) Twisted wire mesh with hexagonal opening of 15 mm (GSWM-2) and (c) welded wire mesh with square opening of 25 mm (GSWM-3). A reduced scale RC beam-column connection detailed as per ductile detailing codes of Indian Standard was considered for the experimental investigation. The rehabilitated specimens were also subjected to similar cyclic displacement. Important parameters related to seismic capacity such as strength, stiffness degradation, energy dissipation, and ductility were evaluated. The rehabilitated connections exhibited equal or better performance and hence the adopted rehabilitation strategies could be considered as satisfactory. Confinement of damaged region using GSWM-1 significantly enhanced the seismic capacity of the connections.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.153-153
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• 2010

Recently, to develop GaN-based light-emitting diodes (LEDs) with better performances, various approaches have been suggested by many research groups. In particular, using the patterned sapphire substrate technique has shown the improvement in both internal quantum efficiency and light extraction properties of GaN-based LEDs. In this paper, we discuss the influences of the direction of the hexagonal-structure arrays of lens-shaped patterns (HSAPs) formed on sapphire substrates on the crystal, optical, and electrical properties of InGaN/GaN multi-quantum-well (MQW) LEDs. The basic direction of the HSAPs is normal (HSAPN) with respect to the primary flat zone of a c-plane sapphire substrate. Another HSAP tilted by 30o (HSAP30) from the HSAPN structure was used to investigate the effects of the pattern direction. The full width at half maximums (FWHMs) of the double-crystal x-ray diffraction (DCXRD) spectrum for the (0002) and (1-102) planes of the HSAPN are 320.4 and 381.6 arcsecs., respectively, which are relatively narrower compared to those of the HSP30. The photoluminescence intensity for the HSAPN structure was ~1.2 times stronger than that for the HSAP30. From the electroluminescence (EL) measurements, the intensity for both structures are almost similar. In addition, the effects of the area of the individual lens pattern consisting of the hexagonal-structure arrays are discussed using the concept of the planar area fraction (PAF) defined as the following equation; PAF = [1-(patterns area/total unit areas)] For the relatively small PAF region up to 0.494, the influences of the HSAP direction on the LED characteristics were significant. However, the direction effects of the HSAP became small with increasing the PAF.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.