• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.107-113
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• 2009

This study investigated the decomposition activities of toluene on 10 mol% Al-W-incorporated mesoporous titano (15 mol %) silicates. The mesopore sizes observed in the transmission electron microscopy images ranged from 2.0 to 5.0 nm, and the pores were irregular on the addition of 10 mol% Al or W ions, but changed to regular hexagonal forms with the simultaneous additions of Al and W. The X-ray photon spectroscopy results showed a shift of the special peak for Ti2p in Al-incorporated mesoporous titanosilicates to a stronger binding energy compared to those of mesoporous titanosilicates and Al-incorporated mesoporous titanosilicates. Three O1s peaks in the spectra of the Al and W coexisted samples were observed at 530.5 and 531.7, 533, and 533.7eV, which were assigned to $Ti-Os\;in\;TiO_2\;and\;Ti_2O_3,\;Si-O\;in\;SiO_2\;and\;Al-O\;in\;Al_2O_3$, respectively. The toluene molecules desorbed at lower temperatures over W-incorporated mesoporous titanosilicates, and the amounts of toluene desorbed were also small; however, Al-incorporated mesoporous titanosilicates adsorbed much more toluene, particular over $Al_7.5-W_2.5-Ti_15-Si_75$. The photocatalytic decomposition of toluene was more enhanced over $Al_7.5-W_2.5-Ti_15-Si_75$ than over Al- or W-incorporated mesoporous titanosilicates only.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.81-85
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• 2007

MnTe layers of high crystalline quality were successfully grown on Si(100) : B and Si(111) substrates by molecular beam epitaxy (MBE). Under tellurium-rich condition and the substrate temperature around $400^{\circ}C$, a layer thickness of $700{\AA}$ could be easily obtained with the growth rate of $1.1 {\AA}/s$. We investigated the structural, magnetic and transport properties of MnTe layers by using x-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometry, and physical properties measurement system (PPMS). Characterization of MnTe layers on Si(100) : B and Si(111) substrates by XRD revealed a hexagonal structure of polycrystals with lattice parameters, ${\alpha}=4.143{\pm}0.001{\AA}\;and\;c=6.707{\pm}0.001{\AA}$. Investigation of magnetic and transport properties of MnTe films showed anomalies unlike antiferromagnetic powder MnTe. The temperature dependence of the magnetization data taken in zero-field-tooling (ZFC) and field-cooling (FC) conditions indicates three magnetic transitions at around 21, 49, and 210 K as well as the great irreversibility between ZFC and FC magnetization in the films. These anomalies are attributable to a magnetic-elastic coupling in the films. Magnetization measurements indicate ferromagnetic behaviour with hysteresis loops at 5 and 300 K for MnTe polycrystalline film. The coercivity ($H_c$) values at 5 and 300 K are 55 and 44 Oe, respectively. In electro-transport measurements, the temperature dependence of resistivity revealed a noticeable semiconducting behaviours and showed conduction via Mott variable range hopping at low temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.391-392
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• 2012

Graphene is a perfectly two-dimensional (2D) atomic crystal which consists of sp2 bonded carbon atoms like a honeycomb lattice. With its unique structure, graphene provides outstanding electrical, mechanical, and optical properties, thus enabling wide variety of applications including a strong potential to extend the technology beyond the conventional Si based electronic materials. Currently, the widespread application for electrostatically switchable devices is limited by its characteristic of zero-energy gap and complex process in its synthesis. Several groups have investigated nanoribbon, strained, or nanomeshed graphenes to induce a band gap. Among various techniques to synthesize graphene, chemical vapor deposition (CVD) is suited to make relatively large scale growth of graphene layers. Direct growth of graphene on hexagonal boron nitride (h-BN) using CVD has gained much attention as the atomically smooth surface, relatively small lattice mismatch (~1.7％) of h-BN provides good quality graphene with high mobility. In addition, induced band gap of graphene on h-BN has been demonstrated to a meaningful value about ~0.5 eV.[1] In this paper, we report the synthesis of grpahene / h-BN bilayer in a chemical vapor deposition (CVD) process by controlling the gas flux ratio and deposition rate with temperature. The h-BN (99.99％) substrate, pure Ar as carrier gas, and $CH_4$ are used to grow graphene. The number of graphene layer grown on the h-BN tends to be proportional to growth time and $CH_4$ gas flow rate. Epitaxially grown graphene on h-BN are characterized by scanning electron microscopy, atomic force microscopy, and Raman spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.213-213
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• 2013

Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturbtheir various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few % decrease in the Fermi velocity ($v_F$) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in vF and mechanical strain, but not by charge doping unlike graphene supported on $SiO_2$ substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.784-790
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• 2003

Present investigation shows the analysis results for ceramic reinforced metal matrix composite under uniaxial transverse tensile loading. The resulting deformation, the projected damage type, and stress-strain behavior were computed depending on microstructure details such as the type of periodic reinforcement array, and the type of interface bonding. A two-dimensional finite element analysis was conducted based on the unit-cell of square, hexagonal, or diagonal periodic away For composite with strong interface bonding, the transverse stress vs. strain curve was generally increased with the increase of the ceramic volume fraction. For the composite with weakly bonded interface, however, the transverse stress vs. strain curve was reduced against the ceramic volume fraction. The decrease was caused by the interface debonding-induced stiffness reduction of the composite. For the composite of weakly bonded interface, the relative reduction rate in the final limit stress for hexagonal array was larger than that for square array. Outcome of the present study was compared favorably with the published literature data.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.1
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• pp.44-55
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• 1996

Emerald (3BeO{\cdot}Al$_{2}$O_{3}{\cdot}6SiO_2 : Cr^{3+}$) single crystals were grown by flux method of $Li_2O-MoO_3 - V_2O_5$ system. The composition of starting materials were 1, 3, 5 mole ratio of $MoO_3 - V_2O_5/$Li_2O$, 20 - 15% of emerald content to flux composition and 1% of $Cr_2O_3$ colordopant to emerald composition. After mixing those were melted at $1100^{\circ}C$ in Pt crucible of electric furnace. Single crystal growth was cooled down slowly rate of $3^{\circ}C$/hr from $1100^{\circ}C$ to $650^{\circ}C$, for the cooling period it was controlled and prevented the nucleation of microcrystallite from variation of each thermal fluctuation range. Specially it has been obtained plenty of large emerald single crystal when thermal fluctuation was treated for cooling period at $1050 ~ 950^{\circ}C$, in 3 mole ratio of $V_2O_5 - MoO_3/Li_2O$ flux. Emerald single crystal growing effect and $Cr_{+3}$ ion of substitutional solid solution effect for $Al_{+3}$ ion was good than mole ratio of 5. Emerald single crystals were c (0001) hexagonal rystal face of preferencial direction and m (1010) post side. Emerald was hexagonal columnar greenish transparent and 2.65 ~ 2.66 of specific gravity.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.329-329
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• 2016

Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.

• Proceedings of the Korean Nuclear Society Conference
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• 1998.05b
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• pp.198-203
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• 1998

액체금속로용 금속연료인 U-10wt.%Zr 합금의 기지조직은 공석조직으로 $\alpha$uranium과 UZr$_2$인 $\delta$상이 교대로 나타나는 층상조직을 이루고 있다. 잘 발달된 층상조직의 두께는 $\alpha$U이 40-8$\mu\textrm{m}$, $\delta$상인 UZr$_2$는 20-30$\mu\textrm{m}$로 $\alpha$U이 $\delta$상의 2-3배 정도 된다. 기지조직내에 나타나는 둥근 형태의 석출물 크기는 ø5-12$\mu\textrm{m}$이며, 응집된 석출물의 크기는 ø15-25$\mu\textrm{m}$이다. 석출물의 TEM SADP과 EDS 분석결과 순수한 $\alpha$Zr이 아니고 산소에 의하여 안정화되고 소량의 uranium을 함유한 Zr rich 상으로 $\alpha$Zr과 같은 hexagonal 결정구조를 갖는다. Rod 형태 및 사각형태의 석출물은 tetragonal 결정구조를 갖는 SiZr$_2$ 상이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1103-1109
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• 2003

Crystalline carbon nitride films have been deposited by RF reactive magnetron sputtering system with negative DC bias. The carbon nitride films deposited on various substrates showed ${\alpha}$- C$_3$N$_4$,${\beta}$-C$_3$N$_4$ and lonsdaleite structures through XRD and FTIR We can find the grain growth of hexagonal structure from SEMI photographs, which is coincident with the theoretical carbon nitride unit cell. When nitrogen gas ratio is 70 % and RF power is 200 W, the growth rate of carbon nitride film on quartz substrate is about 2.1 $\mu\textrm{m}$/hr.

• Applied Science and Convergence Technology
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• v.25 no.2
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• pp.42-45
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• 2016

A two-dimensional metal hole array (2DMHA) structure is fabricated by conventional photo-lithography and electron beam evaporation. The transmittance of the 2DMHA is measured at long wave infrared (LWIR) wavelengths (${\lambda}{\sim}10$ to $24{\mu}m$). The 2DMHA sample shows transmittance of 70 and 67% at $15.4{\mu}m$ due to plasmonic resonance with perforated silver and gold thin films, respectively, under surface normal illumination at LWIR wavelengths. The measured infrared spectrum is separated into two peaks when the size of the hole becomes larger than a half-pitch of the hole array. Six degenerated plasmon modes (1,0) at the metal/Si surface split to three modes at an incident beam angle of $45^{\circ}$ with respect to the surface normal direction, and wavelength shifts of the transmitted spectrum are observed in a red shift and blue shift at the same time.