• 한국결정성장학회지
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• 제26권5호
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• pp.188-192
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• 2016

본 연구에서는, 실리카 분말과 왕겨의 혼합체로부터 탄화된 물질로부터, 탄화규소 (SiC) 분말이 합성되었다. 탄화왕겨와 실리카의 열탄화환원 반응을 통해 얻어진, SiC 시료는 XRD 회절 패턴, FE-SEM 및 FE-TEM을 통해 분석되었다. 시료들은 XRD 패턴에서, $35^{\circ}$ 부근의 (111) peak는 매우 높은 intensity를 나타내었고, $60^{\circ}$, $72^{\circ}$ 부근의 (220), (311) peak 등 탄화규소 결정상에 대한 peak pattern이 명확하게 관찰되었다. Ar 분위기에서 탄화왕겨와 실리카의 혼합비율이 6 : 4인 혼합물로부터 합성된 시료는 XRD 패턴에서 잔류카본이 검출되지 않았으며, hexagonal 결정상의 비율이 비교적 낮고, cubic SiC 결정상이 주도적으로 나타내었다. 탄화왕겨와 실리카의 혼합비율이 6 : 4인 경우에 합성된 시료는 $5{\mu}m$ 이하의 미세한 입자들이 관찰되었으며, TEM 분석결과에서, SiC 결정질상의 (110) 회절패턴 형태를 나타내었다.

• 전자공학회논문지A
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• 제33A권3호
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• pp.126-134
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• 1996

Tungsten silicide films were deposited on the phosphorus-doped poly-Si/SiO$_{2}$/Si-substrates by LPCVD (low pressue chemical vapor deposition). The formation and various properties of tungsten silicide processed by furnace annealing in N$_{2}$ ambient were evaluated by using XRD. AFM, 4-point probe and SEM. And the redistribution of phosphorus atoms has been observed by SIMS. The crystal structure of the as-deposited tungsten silicide films were transformed from the hexagonal to the tetragonal structure upon annealing at 550.deg. C. The surface roughness of tungsten polycide films were found to very smoothly upon annelaing at 850.deg. C and low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide films are measured to be 2.4 .ohm./ㅁafter furnace annealing at 1100.deg. C, 30min. It was found that the sheet resistance of tungsten polycide films upon annealing above 1050.deg. C were independant on the phosphorus concentration of polysilicon layer and furnace annealing times. An out-diffusion of phosphorus impurity through tungsten silicide film after annealing in $O_{2}$ ambient revealed a remarkably low content of dopant by oxide capping.

• 한국재료학회지
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• 제17권1호
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• pp.1-5
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• 2007

GaN thin fan were grown by spin coated colloidal GaOOH precursor. Polycrystalline GaNs with crystalline size of $10{\sim}100nm$ were grown on $SiO_2$ substrate. The shape of crystallite above $900^{\circ}C$ had the hexagonal plate and column type. X-ray diffraction patterns for them correspond to those of the hexagonal wurtzite GaN. With increasing droplets. i.e, thickness of deposited layers, XRD intensity increased. PL (photoluminescence) spectrum consisted with an weak near band-edge emission at 3.45 eV and a broad donor-acceptor emission band at 3.32 eV. From the low temperature PL measurement on GaN grown at $800^{\circ}C$ that the shallow donor-acceptor recombination induced emission was more intense than the near band-edge excitonic emission.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2001년도 춘계학술대회 발표논문집
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• pp.287-289
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• 2001

The morphology of silica supported MoO$_3$ catalysts, which was prepared by impregnation of ammonium heptamolybdate with various weight loadings up to 35 wt%, was studied using x-ray diffraction. In addition to the orthorhombic phase, the behavior of the rarely studied hexagonal phase was characterized. For high loading catalysts, excess ammonium ions present in the monoclinic and triclinic precursors are capable of occupying interstitial sites of microcrystalline MoO$_3$ during moderate temperature calcinations and in doing so enhance the MoO$_3$-SiO$_2$ interaction. This results in a "well dispersed" morphology at high loadings. Sintering at high temperature is due to loss of ammonium from the oxide framework. Ammonia reimpregnation, which leads back to the well dispersed hexagonal phase, may offer a simple regeneration process for spent Mo containing catalysts.

• 한국전자파학회논문지
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• 제18권2호
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• pp.199-205
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• 2007

본 논문에서는 초고속 디지털 PCB 회로에서 발생하는 GBN(Ground Bounce Noise)을 억제하기 위한 새로운 EBG(Electromagnetic Bandgap) 구조의 전원면을 제안하였다. 제안된 구조는 육각형 모양의 단위 셀과 각 셀을 연결하는 선로로 구성되어 있다. 육각형 모양의 단위 셀은 등방성을 띄어 인접 셀의 각 포트 사이의 전달 특성을 동일하게 한다. 제안된 구조는 실제 제작, 측정되었고 330 MHz부터 5.6 GHz까지 넓은 주파수 대역에서 -30 dB 이하로 GBN을 억제하는 특성을 나타낸다. Electromagnetic Interference(EMI) 방사 측정 시에도 일반 전원면/접지면에 비해 낮은 EMI 특성을 나타낸다. 본 논문에서 제안한 육각형 EBG 구조의 전원면은 실제 EBG 전원면의 적용에 효율적으로 작용하여 초고속 디지털 회로의 EMI 문제를 해결하는 데 기여할 것으로 기대된다.

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.828-833
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• 2000

Growth characteristics and microstructure of AIN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the micorstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.111-114
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• 2000

Growth characteristics and microstructure of AlN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• 한국결정성장학회지
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• 제7권2호
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• pp.191-196
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• 1997

다양한 미세결함분석기술(OM, TEM, AFM)을 이용하여 승화법에 의해서 성장된 6H-Sic 단결정 wafer의 내부미소결함을 분석하였다. Wafer내부에는 6각판상헝의 석출물 및 micropipes들이 독립적으로 혹은 혼합적으로 존재하고 있음이 확인되었고, TEM 분석에 의한 비정질상의 검출로 이들은 불안정한 결정성장 인자나 비화학양론적 $Si_{1-x}_xC_x$ 화합물 형성에 기인한다는 사실을 확인하였다.

• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.261-266
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• 2010

In this paper, we report the changes of electrical, structural and optical characteristics in $Ge_2Sb_2Te_5$ thin films according to an increase of Si content. The Si-doped $Ge_2Sb_2Te_5$ thin films were prepared by rf-magnetron co-sputtering method. Isothermal annealing was carried out at $N_2$ atmosphere. The crystallization speed (v) of amorphous thin films was evaluated by detecting the reflection response signals using a nano-pulse scanner (wavelength = 658 nm) with illumination power of 1~17 mW and pulse duration of 10~460 ns. Structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of 300~3000 nm using UV-vis-NIR spectrophotometer. The sheet resistance (RS) of the thin films was measured using 4 point probe. Conclusivlely, the v-value decreased with an increase of Si content, while the RS-values of both crystalline and amorphous phases were increased. In particular, fcc-to-hexagonal transition was suppressed by the added Si atoms.

• 한국결정성장학회지
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• 제5권1호
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• pp.44-49
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• 1995

6H - SiC를 승화법(Sublimation Process)으로 성장하였으며, 성장 결정의 표면에서 나타난 양상에 대하여 광학 현미경을 이용하여 관찰하였다. 6H-SiC는 측면방향(Hexagonal system에서 a축 방향)으로 성장하는 속도가 seed 방향인 c축 방향보다 빠르고, 따라서 많은 성장 step을 관찰할 수 있었다. 또한, SiC 결정의 주된 결함인 micropipe는 성장 후 결정의 표면까지도 형성되고 있어, 거대한 void로 관찰되어졌다. 이것은 pore와는 다르게 구별되며, 완전한 구형의 단면을 가진다. 본 연구에서는 micropipe 및 면결함, 그리고 결정성장시의 step 형성등의 현상에 대하여 광학 현미경으로 조사형 그 결과를 보고하기로 한다.