• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.114-118
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• 2011

We report on the growth and characterization of nano and micro scale GaN structures selectively grown on the vertex of hexagonal GaN pyramids. $SiO_2$ near the vertex of hexagonal GaN pyramids was removed by optimized photolithgraphy process and followed by a selective growth of nano and micro scale GaN structures by metal organic vapor phase epitaxy (MOVPE). The pyramidal GaN nano and micro structures which have crystal facets of semi-polar {1-101} facets were formed only on the vertex of GaN pyramids and the size of the selectively grown nano and micro GaN structures was easily controlled by growth time. As a result of TEM measurement, Reduction of threading dislocation density was conformed by transmission electron microscopy (TEM) in the selectively grown nano and micro GaN structures. However, stacking faults were newly developed near the edge of $SiO_2$ film because of the roughness and nonuniformity in thickness of the $SiO_2$ film.

• Journal of Powder Materials
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• v.8 no.3
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• pp.174-178
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• 2001

The microstructure and mechanical properties of $Si_3N_4/BN $nanocomposites synthesized by chemical processing were investigated. The nanocomposites containing 15 vol% hexagonal BN (h-BN) were fabricated by hot-pressing $\alpha-Si_3N_4$powders covered with turbostratic BN (t-BN). The t-BN coating on $\alpha-Si_3N_4$particles was prepared by heating $\alpha-Si_3N_4$ particles covered with a mixture of boric acid and urea in hydrogen gas. TEM observations of this nanocomposite revealed that nano-sized h-BN particles were homogeneously dispersed within $Si_3N_4$grains as well as at grain boundaries. The strength and thermal shock resistance were significantly improved in comparison with the $Si_3N_4/BN$ microcomposites.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.897-904
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• 1993

CdS doped SiO2 glass coating films which are good candidates for the nonlinear optical materials were prepared by the Sol-Gel method. TEOS, C2H5OH, H2O and HCl were used as starting materials to obtain SiO2 matrix solutions. Then Cd(NO3)2.2H2O and CS(NH2)2 were dissolved into the SiO2 matrix solutions. Coating was performed several times in order to increase the thickness of coated film by the dip-coating method. Then heat treatments were carried out to control the size of CdS microcrystals doped in SiO2 glass matrix with respect to temperatures and times. CdS-doped SiO2 transparent coating films were successfully obtained. CdS crystals were changed from cubic to hexagonal type about $600^{\circ}C$.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.782-786
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• 1999

CdS thin films prepared by vaccum evaperation have been studied the characteristcs of room temperature of scanning electron microscoe(SEM), X-ray diffraction(XRD), energy dispersive X-ray(EDX), and photoluminescence(PL)spectra. The cubic to hexagonal structure phase transitin has been determined to be $350^{\circ}C~450^{\circ}C$. The results of compensated donor levels of $O_2$and Si impurites at S-vacancy were identified CdO and $Cd_2SiO_4$defects. The edge emission peaks measured by PL of room temperature was donor level accoding the theses $O_2$and Si impurites were due to 2.43eV($350^{\circ}C$) and 2.42eV(55$0^{\circ}C$) peak energies respectively. The structure transition annealing temperature was measured $370^{\circ}C$ similar to Ariza-Calderons result, $374^{\circ}C$ by CBD films.

• Bulletin of the Korean Chemical Society
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• v.33 no.11
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• pp.3576-3580
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• 2012

Larva-like GaS nanostructures synthesized by the thermal evaporation of Ga metals and S powders were coated with $SiO_2$ by the sputtering technique. Transmission electron microscopy and X-ray diffraction analyses revealed that the cores and shells of the GaS-core/$SiO_2$-shell larva-like nanostructures were single crystal wurtzite-type hexagonal structured-GaS and amorphous $SiO_2$, respectively. Photoluminescence (PL) measurements at room temperature showed that the passivation of the larva-like GaS nanostructures was successfully achieved with $SiO_2$ without nearly harming the major emission from the wires. However, subsequent thermal annealing treatment was found to be undesirable owing to the degradation of their emission in intensity.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.8
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• pp.670-677
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• 2012

In this paper, mechanical property of biomorphic C/SiC composite was calculated by unit cell analysis. The microstructural arrangements of carbonized pine and radiata pine which were impregnated with silicon, were idealized as square and hexagonal arrays. Unit cell was then defined and equivalent elastic constants were calculated. A single and double unit cell structures were considered. The effect of void distribution was also studied by monte carlo simulation.

• Journal of the Korean Ceramic Society
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• v.42 no.10 s.281
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• pp.672-677
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• 2005

In this study we prepared the Sr-ferrite powders and magnet by a molten salt method using the (NaCl+KCl) salt mixture. Starting materials of $Fe_{2}$$O_{3}$ and Sr$Co_{3}$ were mixed as the molar ratio of 5.70:1, and 0.08 mol$ \% $ $Al_{2}$$O_{3}$, 0.10 mo1$ \% $ Si$O_{2}$ and 0.12 mo1$ \% $ CaO were added as additives. Sr-ferrite powders synthesized at the reaction temperatures of 800$\∼$1200$ ^{\circ}C $ showed the typical M-type hexagonal ferrite phase, and hexagonal plate-like morphology with uniform distribution of 1$\∼$3 $\mu$m particle size. The bulk density of the sintered Sr-ferrite magnet prepared with powders by the molten salt method showed the maximum density of 4.82 g/$cm^{3}$ at the sintering temperature of 1200$^{\circ}C $. The maxima of remanent flux density (Br, 45 emu/g) and coercive force (iHc, 3.75 kOe) occurred at the sintering temperatures of 1150$ ^{\circ}C$ and 1200$^{\circ}C $.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.648-655
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• 2000

Synthesis of the crystalline film was investigated under the diamond growth condition with altering the addition of the nitrogen from 0% to 95%. With increasing the nitrogen concentration, surface morphology of the film was changed from the diamond film with {100} growth plane to the non-faceted diamond film with nano-scale grains. It also showed that the deposition of the diamond film could be synthesized using only methane and nitrogen gases without hydrogen gas. Separated particles with diamond structure showed an octahedral shaped I the nitrogen ranges between 30% and 80%, and newly formed hexagonal crystals are observed when substrate temperature with diamond structure, however, also identify that the hexagonal crystal was SiCN composite composed of Si, C and N atoms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.326-329
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• 1996

In order to synthesize Ba-ferrite fine particles by molten salt method and inhibit the abnormal grain growth of sintered specimen, KCI anti NaCl were added to basic composition to 50% by weight, and added 1 male% of $SiO_2$ to control the shape of Ba-ferrite particles. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substituted with $Co_{2+}$ and $Ti_{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$ $Ti_{x}$ $Co_{x}$ $O_{19}$ , and 1 mole% $SiO_2$ increased the size but shortened c-axis of hexagonal ferrite. Seeds added in Ba-ferrite particle effected inhibition of abnormal grain growth during sintering.ing.g.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.463-463
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• 2013

This paper reports the synthesis and characterization of ZnO:Ga nano-structures deposited on Au/SiNx/Si(001) by radio-frequency sputtering. The effect of the temperature on the microstructure of the as-grown ZnO:Ga thin films was examined. The growth mode of ZnO:Ga nano-structures can be explained by the profile coating, i.e. the ZnO nano-structures were formed with a morphological replica of Au seeds. Initially, the ZnO:Ga nano-structures were overgrown on top of Au nano-crystals. Small ZnO:Ga nano-dots were then nucleated on hexagonal ZnO:Ga discs.