• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.255-255
• /
• 2010

전하 트랩형 비휘발성 메모리는 10년 이상의 데이터 보존 능력과 빠른 쓰기/지우기 속도가 요구 된다. 그러나 두 가지 특성은 터널 산화막의 두께에 따라 서로 trade off 관계를 갖는다. 즉, 두 가지 특성을 모두 만족 시키면서 scaling down 하기는 매우 힘들다. 이것의 해결책으로 적층된 유전막을 터널 산화막으로 사용하여 쓰기/지우기 속도와 데이터 보존 특성을 만족하는 Tunnel Barrier engineered Memory (TBM)이 있다. TBM은 가운데 장벽은 높고 기판과 전극쪽의 장벽이 낮은 crested barrier type이 있으며, 이와 반대로 가운데 장벽은 낮고 기판과 전극쪽의 장벽이 높은 VARIOT barrier type이 있다. 일반적으로 유전율과 밴드갭(band gap)의 관계는 유전율이 클수록 밴드갭이 작은 특성을 갖는다. 이러한 관계로 인해 일반적으로 crested type의 터널 산화막층은 high-k/low-k/high-k의 물질로 적층되며, VARIOT type은 low-k/high-k/low-k의 물질로 적층된다. 이 형태는 밴드갭이 다른 물질을 적층했을 때 전계에 따라 터널 장벽의 변화가 민감하여 전자의 장벽 투과율이 매우 빠르게 변화하는 특징을 갖는다. 결국 전계에 민감도 향상으로 쓰기/지우기 속도가 향상되며 적층된 유전막의 물리적 두께의 증가로 인해 데이터 보존 특성 또한 향상되는 장점을 갖는다. 본 연구에서는 기존의 TBM과 다른 형태의 staggered tunnel barrier를 제안한다. staggered tunnel barrier는 heterostructure의 에너지 밴드 구조 중 하나로 밴드 line up은 두 밴드들이 같은 방향으로 shift된 형태이다. 즉, 가전자대 에너지 장벽의 minimum이 한 쪽에 생기면 전도대 에너지 장벽의 maximum은 반대쪽에 생기는 형태를 갖는다. 이러한 밴드구조를 갖는 물질을 터널 산화막층으로 하게 되면 쓰기/지우기 속도를 증가시킬 수 있으며, 데이터 보존 능력 모두 만족할 수 있어 TBM의 터널 산화막으로의 사용이 기대된다. 본 연구에서 제작한 staggered TBM소자의 터널 산화막으로는 $Si_3N_4$/HfAlO (Hf:Al=1:3)을 사용하여 I-V(current-voltage), Retention, Endurance를 측정하여 메모리 소자로서의 특성을 분석하였으며, 터널 산화막의 제 1층인 $Si_3N_4$의 두께를 1.5 nm, 3 nm일 때의 특성을 비교 분석하였다.

• Korean Journal of Chemical Engineering
• /
• v.35 no.12
• /
• pp.2442-2451
• /
• 2018

Novel highly active visible-light photocatalysts in the form of zinc bismuth oxide ($ZnBi_2O_4$) and graphite hybrid composites were prepared by coupling via a co-precipitation method followed by calcination at $450^{\circ}C$. The asprepared $ZnBi_2O_4$-graphite hybrid composites were tested for the degradation of rhodamine B (RhB) solutions under visible-light irradiation. The existence of strong electronic coupling between the two components within the $ZnBi_2O_4$-graphite heterostructure suppressed the photogenerated recombination of electrons and holes to a remarkable extent. The prepared composite exhibited excellent photocatalytic activity, leading to more than 93% of RhB degradation at an initial concentration of $50mg{\cdot}L^{-1}$ with 1.0 g catalyst per liter in 150 min. The excellent visible-light photocatalytic mineralization of $ZnBi_2O_4-1.0graphite$ in comparison with pristine $ZnBi_2O_4$ could be attributed to synergetic effects, charge transfer between $ZnBi_2O_4$ and graphite, and the separation efficiency of the photogenerated electrons and holes. The photo-induced $h^+$ and the superoxide anion were the major active species responsible for the photodegradation process. The results demonstrate the feasibility of $ZnBi_2O_4-1.0graphite$ as a potential heterogeneous photocatalyst for environmental remediation.

• Korean Journal of Materials Research
• /
• v.29 no.7
• /
• pp.456-462
• /
• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• Journal of the Semiconductor & Display Technology
• /
• v.22 no.1
• /
• pp.28-32
• /
• 2023

Recently, the use of stable lithium nanostructures as substrates and electrodes for secondary batteries can be a fundamental alternative to the development of next-generation system semiconductor devices. However, lithium structures pose safety concerns by severely limiting battery life due to the growth of Li dendrites during rapid charge/discharge cycles. Also, enabling long cyclability of high-voltage oxide cathodes is a persistent challenge for all-solid-state batteries, largely because of their poor interfacial stabilities against oxide solid electrolytes. For the development of next-generation system semiconductor devices, solid electrolyte nanostructures, which are used in high-density micro-energy storage devices and avoid the instability of liquid electrolytes, can be promising alternatives for next-generation batteries. Nevertheless, poor lithium ion conductivity and structural defects at room temperature have been pointed out as limitations. In this study, a low-dimensional Graphene Oxide (GO) structure was applied to demonstrate stable operation characteristics based on Li+ ion conductivity and excellent electrochemical performance. The low-dimensional structure of GO-based solid electrolytes can provide an important strategy for stable scalable solid-state power system semiconductor applications at room temperature. The device using uncoated bare NCA delivers a low capacity of 89 mA h g-1, while the cell using GO-coated NCA delivers a high capacity of 158 mA h g−1 and a low polarization. A full Li GO-based device was fabricated to demonstrate the practicality of the modified Li structure using the Li-GO heterointerface. This study promises that the lowdimensional structure of Li-GO can be an effective approach for the stabilization of solid-state power system semiconductor architectures.

• Journal of Adhesion and Interface
• /
• v.24 no.1
• /
• pp.36-40
• /
• 2023

A van der Waals material refers to a material having a two-dimensional layered structure composed of van der Waals bonds with weak interlayer bonding. The research based on heterojunction structures using such van der Waals two-dimensional materials has been steadily studied since the discovery of graphene. Herein, this paper reports a van der Waals heterojunction -based field-effect transistor device based on monolayer single crystalline MoSe2 grown by atmospheric pressure chemical vapor deposition. We found that MoSe₂ grown under optimized process conditions did not have atomic-level defects and the transistor devices incorporating MoSe₂ also showed excellent characteristics.

• ETRI Journal
• /
• v.38 no.4
• /
• pp.675-684
• /
• 2016

This paper demonstrates the effect of fluoride-based plasma treatment on the performance of $Al_2O_3/AlGaN/GaN$ metal-insulator-semiconductor heterostructure field effect transistors (MISHFETs) with a T-shaped gate length of $0.20{\mu}m$. For the fabrication of the MISHFET, an $Al_2O_3$ layer as a gate dielectric was deposited using atomic layer deposition, which greatly decreases the gate leakage current, followed by the deposition of the silicon nitride layer. The silicon nitride layer on the gate foot region was then selectively removed through a reactive ion etching technique using $CF_4$ plasma. The etching process was continued for a longer period of time even after the complete removal of the silicon nitride layer to expose the $Al_2O_3$ gate dielectric layer to the plasma environment. The thickness of the $Al_2O_3$ gate dielectric layer was slowly reduced during the plasma exposure. Through this plasma treatment, the device exhibited a threshold voltage shift of 3.1 V in the positive direction, an increase of 50 mS/mm in trans conductance, a degraded off-state performance and a larger gate leakage current compared with that of the reference device without a plasma treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.327-327
• /
• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.19 no.2
• /
• pp.61-65
• /
• 2009

In this paper, we report on the growth and optical characteristics of white-LED without fluorescent material. The growth of DH(double heterostructure) with AlGaN active layer was performed on a n-GaN/(0001) $Al_{2}O_{3}$ by the mixed-source HVPE and multi-sliding boat. The CRI(color rendering index) of packaging device charged in the range 72-93 with CIE chromaticity coordinates(x=$0.26{\sim}0.34$, y=$0.31{\sim}0.40$). And CCT(correlated color temperature) values was measured $5126{\sim}10406K$ with increasing injection current. The CIE point of conventional phosphor white LED shifts blue region, but cm point of non-phosphor white LED shifts opposite direction. These results show the mixed-source HVPE can be possible to newly fabricate method of phosphor free white LED with high CRI value.

• The Korean Journal of Ceramics
• /
• v.4 no.2
• /
• pp.95-98
• /
• 1998

We have developed new type of superconducting-superionic conducting nanohybrids, $Ag_xI_wBi_2Sr_2Ca_{n-1}Cu_nO_y$ (n=1 and 2) by applying the chimie douce reaction to the superconducting Bi-based cuprates. These nanohybrids can be achieved by the stepwise intercalation whereby the $Ag^+$ ion is thermally diffused into the pre-intercalated iodine sublattice of $IBi_2Sr_2Ca_{n-1}Cu_nO_y$. According to the X-ray diffraction analysis, the Ag-I intercalates are found to have an unique heterostructure in which the superionic conducting Ag-I layer and the superconducting $IBi_2Sr_2Ca_{n-1}Cu_nO_y$ layer are regularly interstratified with a remarkable basal increment of ~7.3$\AA$. The systematic XAS studies demonstrate that the intercalation of Ag-I accompanies the charge transfer between host and guest, giving rise to a change in hole concentration of $CuO_2$ layer and to a slight $T_c$ change. The Ag K-edge EXAFS result reveals that the intercalated Ag-I has a $\beta$-AgI-like local structure with distorted tetrahedral symmetry, suggesting a mobile environment for the intercalated $Ag^+$ ion. In fact, from ac impedance analyses, we have found that the Ag-I intercalates possess a fast ionic conductivity ($\sigma_i=10^{-1.4}\sim 10^{-2.6}\Omega^{-1}\textrm{cm}^{-1}\;at\;270^{\circ}C$ with an uniform activation energy ($\DeltaE_a=0.22\pm 0.02$ eV). More interesting finding is that these intercalates exhibit high electronic conducting as well as ionic ones ($t_i$=0.02~0.60) due to their interstratified structure consisting of superionic conducting and superconducting layers. In this respect, these new intercalates are expected to be useful as an electrode material in various electrochemical devices.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.22 no.1
• /
• pp.11-14
• /
• 2012

The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.