• ETRI Journal
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• v.27 no.5
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• pp.569-578
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• 2005

The purpose of this paper is to describe the implementation of monolithically matching circuits, interface circuits, and RF core circuits to the same substrate. We designed and fabricated on-chip 1 to 6 GHz up-conversion and 1 to 8 GHz down-conversion mixers using a 0.8 mm SiGe hetero-junction bipolar transistor (HBT) process technology. To fabricate a SiGe HBT, we used a reduced pressure chemical vapor deposition (RPCVD) system to grow a base epitaxial layer, and we adopted local oxidation of silicon (LOCOS) isolation to separate the device terminals. An up-conversion mixer was implemented on-chip using an intermediate frequency (IF) matching circuit, local oscillator (LO)/radio frequency (RF) wideband matching circuits, LO/IF input balun circuits, and an RF output balun circuit. The measured results of the fabricated up-conversion mixer show a positive power conversion gain from 1 to 6 GHz and a bandwidth of about 4.5 GHz. Also, the down-conversion mixer was implemented on-chip using LO/RF wideband matching circuits, LO/RF input balun circuits, and an IF output balun circuit. The measured results of the fabricated down-conversion mixer show a positive power conversion gain from 1 to 8 GHz and a bandwidth of about 4.5 GHz.

• ETRI Journal
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• v.31 no.5
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• pp.601-603
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• 2009

This letter presents a high performance 2.4 GHz two-stage power amplifier (PA) operating in the temperature range from $-30^{\circ}C$ to $+85^{\circ}C$ for IEEE 802.11g, wireless local area network application. It is implemented in InGaP/GaAs hetero-junction bipolar transistor technology and has a bias circuit employing a temperature compensation technique for error vector magnitude (EVM) performance. The technique uses a resistor made with a base layer of HBT. The design improves EVM performance in cold temperatures by increasing current. The implemented PA has a dynamic EVM of less than 4%, a gain of over 26 dB, and a current less than 130 mA below the output power of 19 dBm across the temperature range from $-30^{\circ}C$ to $+85^{\circ}C$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.2
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• pp.199-207
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• 2011

A Ku-band low noise amplifier has been designed and fabricated by using 0.25 um SiGe BiCMOS process. The developed Ku-band LNA RFIC which has been designed with hetero-junction bipolar transistor(HBT) in the BiCMOS process have noise figure about 2.0 dB and linear gain over 19 dB in the frequency range from 9 GHz to 14 GHz. Optimization technique for p-tap value and electro-magnetic(EM) simulation technique had been used to overcome the inaccuracy in the PDK provided from the foundry service company and to supply the insufficient inductor library. The finally fabricated low noise amplifier of two fabrication runs has been implemented with the size of $0.65\;mm{\times}0.55\;mm$. The pure amplifier circuit layout with the reduced size of $0.4\;mm{\times}0.4\;mm$ without the input and output RF pads and DC bais pads has been incorporated as low noise amplication stages in the multi-function RFIC for the active phased array antenna of Ku-band satellite VSAT.

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.1
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• pp.144-152
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• 2009

This paper propose highly miniaturized active $90^{\circ}C$ phase difference power divider and combiner for application to wireless communication system. The conventional passive $90^{\circ}C$ power divider and combiner cannot be integrated on MMIC because of their very large circuit size. Therefore, the highly miniaturized active $90^{\circ}C$ phase difference power divider and combiner are required for a development of highly integrated MMIC. In this paper, the highly miniaturized active $90^{\circ}C$ phase difference power divider and combiner employing InGaAs/GaAs HBT were designed, fabricated on GaAs substrate. According to the results, the circuit size of fabricated active $90^{\circ}C$ phase difference power divider and combiner were $1.67{\times}0.87$ mm and $2.42{\times}1.05$ mm, respectively, which were 31.6% and 2.2% of the size of conventional passive branch-line coupler. The output gain division characteristic of proposed divider circuit showed 8.4 dB and 7.9 dB respectively, and output phase difference characteristic showed $-89.3^{\circ}C$. The output gain coupling characteristic of proposed combiner circuit showed 9.4 dB and 10.5 dB respectively, and output phase difference characteristic showed $-92.6^{\circ}C$. The highly miniaturized active $90^{\circ}C$ phase difference power divider and combiner exhibited good RF performances compared with the conventional passive branch-line coupler.