• Journal of Electrochemical Science and Technology
• /
• v.1 no.1
• /
• pp.31-38
• /
• 2010

In this study, we have demonstrated the fine structure effect of PdCo electrocatalyst on oxygen reduction reaction activity with different alloy composition and heat-treatment time. In order to identify the intrinsic factors for the electrocatalytic activity, various X-ray analyses were used, including inductively coupled plasma-atomic emission spectrometer, transmission electron microscopy, X-ray diffractometer, and X-ray Absorption Spectroscopy technique. In particular, extended X-ray absorption fine structure was employed to extract the structural parameters required for understanding the atomic distribution and alloying extent, and to identify the corresponding simulated structures by using FEFF8 code and IFEFFIT software. The electrocatalytic activity of PdCo alloy nanoparticles for the oxygen reduction reaction was evaluated by using rotating disk electrode technique and correlated to the change in structural parameters. We have found that Pd-rich surface was formed on the Co core with increasing heating time over 5 hours. Such core shell structure of PdCo/C showed that a superior oxygen reduction reaction activity than pure Pd/C or alloy phase of PdCo/C electrocatalysts, because the adsorption energy of adsorbates was apparently reduced by lowering the dband center of the Pd skin due to a combination of the compressive strain effect and ligand effect.

• Journal of the Korean Vacuum Society
• /
• v.19 no.2
• /
• pp.155-160
• /
• 2010

The effect of process temperature of a final annealing step in the fabrication of phase change memory (PCM) devices was investigated. Discrete PCM devices employing $Ge_2Sb_2Te_5$ (GST) films as an active element were made in a pore-style configuration, and they were annealed at various temperatures ranging from 160 to $300^{\circ}C$. The behaviors of cell resistance change from SET resistance to RESET resistance were totally different according to the annealing temperatures. There was a critical annealing temperature for the fabrication of normal PCM devices and abnormal operations were observed in some devices annealed at temperatures lower or higher than the critical temperature. Those influences of annealing temperature seem closely related to the thermal stability of a top electrode/GST/heating layer multilayer structure in the PCM devices.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.2
• /
• pp.17-21
• /
• 2017

Horizontal thin-film thermoelectric cooler has been simulated using a commercial software (ANSYS Workbench Thermal-electric). The thermoelectric cooler consists of thin-film n-type $Bi_2Te_3$, p-type $Sb_2Te_3$ thermoelectric elements, and Au electrode, respectively. The hot spot was placed under the center of device which represents Joule heating. Numerical analysis was conducted by geometric variable, and a maximum temperature difference of $13^{\circ}C$ was obtained. As from the simulation parameters, we presented an optimized design for high efficiency cooling.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.8-9
• /
• 2006

Hafnium oxide ($HfO_2$) thin films were deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$. Prior to the deposition of $HfO_2$ films, a thin Hf ($10\;{\AA}$) metal layer was deposited. Deposition temperature of $HfO_2$ thin film was $350^{\circ}C$ and its thickness was $150\;{\AA}$. Samples were then annealed using furnace heating to temperature ranges from 500 to $900^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Thermally evaporated $3000\;{\AA}$-thick AI was used as top electrode. In this work, We study the interface characterization of $HfO_2$/Hf/Si MOS capacitor depending on annealing temperature. Through AES(Auger Electron Spectroscopy), capacitance-voltage (C-V) and current-voltage (I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf meta1 layer in our structure effective1y suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

• Korean Journal of Materials Research
• /
• v.9 no.12
• /
• pp.1216-1221
• /
• 1999

GaN films were deposited on sapphire [$Al_2O_3(0001)$] substrates at relatively low temperature by MOCVD using N-atom source based on a Dielectric Barrier Discharged method. Ammonia gas($NH_3$is commonly used as an N-source to grow GaN films in conventional MOCVD process, and heating to high temperature is required to provide sufficient dissociation of $NH_3$. We used a dielectric barrier discharge method instead of $NH_3$ to grow GaN film relatively low temperature. DBD is a type of discharge, which have at least one dielectric material as a barrier between electrode. DBD is a type of controlled microarc that can be operated at relatively high gas pressure. Crystallinity and surface morphology depend on growth temperature and buffer layer growth. With the DBD-MOCVD method, wurtzite GaN which is dominated by the (0001) reflection was successfully grown on sapphire substrate even at $700^{\circ}C$.

• Journal of Electrochemical Science and Technology
• /
• v.13 no.3
• /
• pp.390-397
• /
• 2022

The use of microwaves as the energy source for synthesis and sintering of ceramics offers substantial advantages compared to conventional gas-fired and electric resistance furnaces. Benefits include much shorter processing times and reaching the sintering temperature more quickly, resulting in superior final product quality. Most oxide ceramics poorly interact with microwave irradiation at low temperatures; thus, a more complex setup including a susceptor is needed, which makes the whole process very complicated. This investigation pursued a new approach, which enabled us to use microwave irradiation directly in poorly coupled oxides. In many solid-state electrochemical devices, the support is either metal or can be reduced to metal. Metal powders in the support can act as an internal susceptor and heat the entire cell. Then sufficient interaction of microwave irradiation and ceramic material can occur as the sample temperature increases. This microwave heating and exothermic reaction of oxidation of the support can sinter the ceramic very efficiently without any external susceptor. In this study, yttria stabilized zirconia (YSZ) and a Ni-YSZ cermet support were used as an example. The cermet was used as the support, and a YSZ electrolyte was coated and sintered directly using microwave irradiation without the use of any susceptor. The results were compared to a similar cell prepared using a conventional electric furnace. The leakage test and full cell power measurement results revealed a fully leak-free electrolyte. Scanning electron microscopy and density measurements show that microwave sintered samples have lower open porosity in the electrode support than conventional heat treatment. This technique offers an efficient way to directly use microwave irradiation to sinter thin film ceramics without a susceptor.

• Applied Chemistry for Engineering
• /
• v.18 no.5
• /
• pp.522-526
• /
• 2007

Structural features and electrochemical performances of cokes pyrolized from oxidized cokes were examined, and compared with KOH-activated coke. Needle cokes ($d_{002}=3.5{\AA} $), having a graphene layer structure, were changed to a single phase of graphite oxide after oxidation treatment with an acidic solution having an $NaCLO_3$/needle coke composition ratio of above 7.5, and the inter-layer distance of the oxidized coke was expanded to $6.9{\AA} $ with increasing oxygen content. After heating at $200^{\circ}C$, the oxidized coke was pyrolized to the graphene layer structure with inter-layer distance of $3.6{\AA} $. However, the change of the inter-layer distance of the needle coke was not observed in the KOH activation process. On the other hand, an intercalation of electrolyte ions into the pyrolized coke, observed at first charge, occurred at 1.0 V, in which the value was lower than that of KOH-activation coke. The cell capacitor using pyrolized coke exhibited a lower internal resistance of $0.57{\Omega}$ in 1 kHz, and a larger capacitance per weight and volume of 30.3 F/g and 26.9 F/ml at the two-electrode system in the potential range 0~2.5 V than those of the cell capacitor using KOH-activation of coke. This better electrochemical performance may be associated with structure defects in the graphene layer derived from the process of the inter-layer expansion and shrinkage.

• Journal of the Korean Chemical Society
• /
• v.30 no.1
• /
• pp.19-26
• /
• 1986

A titanium oxide thin films were prepared by air oxidation and vapour oxidation and a $TiO_2$ single crystal was reduced by heating in an argon atmosphere. All the electrode characteristics of the Ti$O_{2-x}$, thin films are not different from those of slightly reduced single crystal rutile. In cyclic voltammogram of oxygen containing electrolyte solution at Ti$O_{2-x}$ electrodes, cathodic peaks were observed at between -0.8V and -1.0V vs. SCE. The cathodic current near 0V vs. SCE in saturated solution with nitrogen was observed to be greater than in saturated solution with air. The chronoamperogram was represented by the equation of i = $i_0e^{-kt}$, when the rate constant k was represented by the equation of k =$k_0{[H^+]}^nexp(A{\eta}+E_a/RT)$ The values of activation energy $E_a $were found to be 4.6~4.8kcal/mole in overpotential range of 0.035∼0.145 V and 1.6kcal/mole in overpotential range of 0.2∼0.5V. The values of n and A were found to be 0. 1 and 5.4~5.6/V in range of 0.035~0.145V, and in range of 0.2~0.5V, to be 0.04 and 1.3/V, respectively. This can be interpreted as an totally irreversible reduction of oxygen.

• Journal of the Korean Electrochemical Society
• /
• v.24 no.4
• /
• pp.120-132
• /
• 2021

Although the development of high-Nickel is being actively carried out to solve the capacity limitation and the high price of raw cobalt due to the limitation of high voltage use of the existing LiCoO₂, the deterioration of the battery characteristics due to the decrease in structural stability and increase of the Ni content. It is an important cause of delaying commercialization. Therefore, in order to increase the high stability of the Ni-rich ternary cathod material LiNi_0.6Co_0.2Mn_0.2O₂, precursor Ni_0.6Co_0.2Mn_0.2-x(OH)₂/xTiO₂ was prepared using a nanosized TiO₂ suspension type source for uniform Ti substitution in the precursor. It was mixed with Li₂CO₃, and after heating, the cathode active material LiNi_0.6Co_0.2Mn_0.2-xTi_xO₂ was synthesized, and the physical properties according to the Ti content were compared. Through FE-SEM and EDS mapping analysis, it was confirmed that a positive electrode active material having a uniform particle size was prepared through Ti-substituted spherical precursor and Particle Size Analyzer and internal density and strength were increased, XRD structure analysis and ICP-MS quantitative analysis confirmed that the capacity was effectively maintained even when the Ti-substituted positive electrode active material was manufactured and charging and discharging were continued at high temperature and high voltage.

• Applied Chemistry for Engineering
• /
• v.7 no.6
• /
• pp.1078-1086
• /
• 1996

The peroxo-polytungstic acid was formed by the direct reaction of tungsten powder with the hydrogen peroxide solution. Peroxo-polytungstic powder were prepared by rotary evaporator using the fabricated on to ITO coated glass as substrate by dip-coating method using $2g/10mL(W-IPA/H_2O)$ sol solution. A substrate was dipped into the sol solution and after a meniscus had settled, the substrate was withdrawn at a constant rate of the 3mm/sec. Thicker layer could be built up by repeated dipping/post-treatment 15 times cycles. The layers dried at the temperature of $65{\sim}70^{\circ}C$ during the withdrawn process, and then tungsten oxides thin film was formed by final heating treatment at the temperature of $230{\sim}240^{\circ}C$ for 30min. A linear rotation between the thickness of thin film and the number of dipping/post-treatment cycles for tungsten oxides thin films made by dip-coating was found. The thickness of thin film had $60{\AA}$ after one dipping. From the patterns of XRD, the structure of tungsten oxides thin film identified as amorphous one and from the photographs of SEM, the defects and the moderate cracks were observed on the tungsten oxides thin film, but the homogeneous surface of thin films were mostly appeared. The electrochemical characteristic of the $ITO/WO_3$ thin film electrode were confirmed by the cyclic voltammetry and the cathodic Tafel polaization method. The coloring bleaching processes were clearly repeated up to several hundreds cycles by multiple cyclic voltammetry, but the dissolved phenomenon of thin film revealed in $H_2SO_4$ solution was observed due to the decrease of the current densities. The diffusion coefficient was calculated from irreversible Randles-Sevick equation from the data obtained by the cyclic voltammetry with various scan rates.