• 한국전기전자재료학회논문지
• /
• 제16권12S호
• /
• pp.1217-1223
• /
• 2003

Nerve gas sensor based on tin oxide was fabricated and its characteristics were examined. Target gas is dimethyl methyl phosphonate(C$_3$ $H_{9}$ $O_3$P, DMMP) that is simulant gas of nerve gas. Sensing materials were Sn $O_2$ added a-Al$_2$ $O_3$ with 0∼20wt.% and were physically mixed each material. They were deposited by screen printing method on alumina substrate. The sensor device was consisted of sensing electrode with interdigit(IDT) type in front and a heater in back side. Total size of device was 7${\times}$10${\times}$0.6㎣. Crystallite size & phase identification and morphology of fabricated Sn $O_2$ powders were analyzed by X-ray diffraction and by a scanning electron microscope, respectively. Fabricated sensor was measured as flow type and resistance change of sensing material was monitored as real time using LabVIEW program. The best sensitivity was 75% at adding 4wt.% $\alpha$-Al$_2$ $O_3$, operating temperature 30$0^{\circ}C$ to DMMP 0.5ppm. Response and recovery time were about 1 and 3min., respectively. Repetition measurement was very good with $\pm$3％ in full scale.TEX>$\pm$3％ in full scale.

• 한국군사과학기술학회지
• /
• 제6권3호
• /
• pp.54-61
• /
• 2003

$SnO_2$ gas sensor for the detection DMMP, simulant of nerve gas was fabricated and its characteristics were examined. Sensing materials were $SnO_2$ added by TEX>$\alpha$-$Al_{2}O_{3}$ with 0∼20wt.% and $In_{2}O_{3}$ with 0∼3wt.% and were physically mixed each material. They were deposited by screen printing method on alumina substrate. The sensor was consisted of sensing electrode with interdigit(IDT) type in front and a heater in back side. Its dimension was 7$\times$10$\times$0.6$\textrm{mm}^2$. Crystallite size 8t phase identification, specific surface area and morphology of fabricated $SnO_2$ powders were analyzed by X-ray diffraction(XRD), surface area analyzer(BET) and by a scanning electron microscope(SEM), respectively. Sensor was measured as flow type and sensor resistance change was monitored as real time using LabVIEW program. The best sensitivities were 75% at adding 4wt.% TEX>$\alpha$-$Al_{2}O_{3}$, operating temperature $300^{\circ}C$ and 87% at adding 2wt.% $In_{2}O_{3}$, operating temperature $350^{\circ}C$ to DMMP 0.5ppm. Response and recovery times were about 1 and 3 min., respectively. Repetition measurement was very good with $\pm$3% in full scale. As a result, operating temperature was lower TEX>$\alpha$-$Al_{2}O_{3}$ than $In_{2}O_{3}$, but sensitivity was higher $In_{2}O_{3}$ than $\alpha$-$Al_{2}O_{3}$.

• 마이크로전자및패키징학회지
• /
• 제6권2호
• /
• pp.63-68
• /
• 1999

가스 감지막의 미세구조와 비화학량론 구조의 변화에 따른 응답특성의 거동을 고찰하기 위하여 소성 조건을 변화시키면서 $WO_3$후막형 가스센서를 제조하였다. 소자는 감지물질인 $WO_3$분말과 유기 용제를 균일하게 혼합한 페이스트를 Au전극과 $RuO_2$발열체가 입혀진 알루미나 기판 위에 스크린 프린팅 방법으로 제조하였다. 소성 조건을 변화시키기 위하여 600-$800^{\circ}C$ 온도범위하에서 1시간 동안 열처리 하였고, Ar과 $O_2$가스의 비율을 변화시키면서 $700^{\circ}C$에서 1시간 재열처리하였다. 열처리 결과, 소성 온도 $700^{\circ}C$에서 제조된 $WO_3$가스센서 소자가 가스감도 210, 응답속도 2초로 가장 좋은 특성을 보였으며 Ar과 $O_2$가스의 비율이 40-50%의 소성 분위기에서 가스 감도가 가장 높게 나타났다.

• Journal of Electrical Engineering and Technology
• /
• 제5권2호
• /
• pp.342-351
• /
• 2010

The SiC-$ZrB_2$ composites were fabricated by combining 30, 35, 40, 45 and 50 vol. % of zirconium diboride ($ZrB_2$) powders with silicon carbide (SiC) matrix. The SiC-$ZrB_2$ composites and the sintered compacts were produced through spark plasma sintering (SPS) under argon atmosphere, and its physical, electrical, and mechanical properties were examined. Also, the thermal image analysis of the SiC-$ZrB_2$ composites was examined. Reactions between $\beta$-SiC and $ZrB_2$ were not observed via x-ray diffraction (XRD) analysis. The apparent porosity of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$, SiC+45vol.%$ZrB_2$ and SiC+50vol.%$ZrB_2$ composites were 7.2546, 0.8920, 0.6038, 1.0981, and 10.0108%, respectively. The XRD phase analysis of the sintered compacts demonstrated a high phase of SiC and $ZrB_2$. Among the $SiC+ZrB_2$ composites, the SiC+50vol.%$ZrB_2$ composite had the lowest flexural strength, 290.54MPa, the other composites had more than 980MPa flexural strength except the SiC+30vol.%$ZrB_2$ composite; the SiC+40vol.%$ZrB_2$ composite had the highest flexural strength, 1011.34MPa, at room temperature. The electrical properties of the SiC-$ZrB_2$ composites had positive temperature coefficient resistance (PTCR). The V-I characteristics of the SiC-$ZrB_2$ composites had a linear shape in the temperature range from room to $500^{\circ}C$. The electrical resistivities of the SiC+30vol.%$ZrB_2$, SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$ SiC+45vol.%$ZrB_2$ and SiC+50vol.%$ZrB_2$ composites were $4.573\times10^{-3}$, $1.554\times10^{-3}$, $9.365\times10^{-4}$, $6.999\times10^{-4}$, and $6.069\times10^{-4}\Omega{\cdot}cm$, respectively, at room temperature, and their resistance temperature coefficients were $1.896\times10^{-3}$, $3.064\times10^{-3}$, $3.169\times10^{-3}$, $3.097\times10^{-3}$, and $3.418\times10^{-3}/^{\circ}C$ in the temperature range from room to $500^{\circ}C$, respectively. Therefore, it is considered that among the sintered compacts the SiC+35vol.%$ZrB_2$, SiC+40vol.%$ZrB_2$ and SiC+45vol.%$ZrB_2$ composites containing the most outstanding mechanical properties as well as PTCR and V-I characteristics can be used as an energy friendly ceramic heater or ohmic-contact electrode material through SPS.