• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.173-176
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• 2005

A new $MoO_3$ based microsensor with low power consumption was presented. Typical size of sensor was 5mm in width and 8mm in length. As a sensitive electrode, $MoO_3$ was successfully fabricated by IC technology on pyrex glass of $250{\mu}m$ in thickness. After annealing at $550^{\circ}C$ for 3hrs, the film was fully crystallized and demonstrated as pure $MoO_3$ structure. The grain size of $MoO_3$ was plat like and typical size was about $1{\mu}m$. Based on the results of sensitivity measurement, $MoO_3$ microsensor shows especially high selectivity to $H_2$ reducing gas atmosphere. The applied heater power was lower than 0.5 Watt.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.826-829
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• 2002

$MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in en atmosphere by RF reactive sputtering. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}$mtorr and all deposited films were annealed at $500^{\circ}C$ for 5hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by XRD. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.227-231
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• 2020

Silver nanowire random networks are promising candidates for replacing indium tin oxide (ITO) as transparent and conductive electrodes. They can also be used as transparent heating films with self-cleaning and defogging properties. By virtue of the Joule heating effect, silver nanowire random networks can be heated when voltage bias is applied; however, they are unsuitable for long-term use. In this work, we study the Joule heating of silver nanowire random networks embedded in polymers. Silver nanowire random networks embedded in polymers exhibit breakdown under the application of electric current. Their surface morphological changes indicate that nanoparticle formation may be the main cause of this electrical breakdown. Numerical analyses are used to investigate the temperatures of the silver nanowire and substrate.

• Korean Journal of Materials Research
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• v.14 no.4
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• pp.276-280
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• 2004

Carbon nanotubes(CNT) were synthesized by arc-discharge method. To fabricate CNT sensor, CNT powder was dispersed in $\alpha$-Terpinol($C_{10}$ $H_{17}$OH) solution. The CNT films were fabricated by screen printing on the interdigitated Pt/Pd alloy electrode. The microstructure of CNT film were observed by scanning electron microscopy (SEM). In order to investigate the gas sensing characteristics of the film, the CNT film was experimented to measure NH$_3$ response and recovery time. And this sensor shows better reproductibility and faster recovery time than another CNT sensors. We suggest the possibility to utilize a CNT as new sensing materials for environmental monitoring.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.510-514
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• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

• Korean Journal of Materials Research
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• v.23 no.6
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• pp.299-303
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• 2013

In this study, a micro gas sensor for $NO_x$ was fabricated using a microelectromechanical system (MEMS) technology and sol-gel process. The membrane and micro heater of the sensor platform were fabricated by a standard MEMS and CMOS technology with minor changes. The sensing electrode and micro heater were designed to have a co-planar structure with a Pt thin film layer. The size of the gas sensor device was about $2mm{\times}2mm$. Indium oxide as a sensing material for the $NO_x$ gas was synthesized by a sol-gel process. The particle size of synthesized $In_2O_3$ was identified as about 50 nm by field emission scanning electron microscopy (FE-SEM). The maximum gas sensitivity of indium oxide, as measured in terms of the relative resistance ($R_s=R_{gas}/R_{air}$), occurred at $300^{\circ}C$ with a value of 8.0 at 1 ppm $NO_2$ gas. The response and recovery times were within 60 seconds and 2 min, respectively. The sensing properties of the $NO_2$ gas showed good linear behavior with an increase of gas concentration. This study confirms that a MEMS-based gas sensor is a potential candidate as an automobile gas sensor with many advantages: small dimension, high sensitivity, short response time and low power consumption.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.63-63
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• 2008

Environmental monitoring sub-system has been developed using gas sensor module, Bluetooth module and PDA phone. The gas sensor module consists of $NO_2or$ CO gas sensor and signal processing chips. Gas sensor is composed of the micro-heater, sensing electrode and sensing material. Metal oxide nano-material was selectively deposited on a substrate with micro-heater and was integrated to the gas sensor module. The change in resistance of the metal oxide nano-material due to exposure of oxidizing or deoxidizing gases is utilized as the principle of this gas sensor operation mechanism. This variation detected in the gas sensor module was transferred to the PDA phone by way of Bluetooth module.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.9
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• pp.1757-1763
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• 2009

The composites were fabricated by adding 0, 15, 20, 25[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. The physical, mechanical and electrical properties of electroconductive SiC ceramic composites by Spark Plasma Sintering(hereafter, SPS) were examined. Reactions between ${\beta}-SiC$ and $ZrB_2$ were not observed in the XRD analysis. The relative density of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 90.93[%], 74.62[%], 74.99[%] and 72.61[%], respectively. The XRD phase analysis of the electroconductive SiC ceramic composites reveals high of SiC and $ZrB_2$ and low of $ZrO_2$ phase. The lowest flexural strength, 108.79[MPa], shown in SiC+15[vol.%] $ZrB_2$ composite and the highest - 220.15[MPa] - in SiC+20[vol.%] $ZrB_2$composite at room temperature. The trend of the mechanical properties of the electroconductive SiC ceramic composites moves in accord with that of the relative density. The electrical resistivities of mono SiC, SiC+15[vol.%]$ZrB_2$, SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ composites are 4.57${\times}10^{-1}$, 2.13${\times}10^{-1}$, 1.53${\times}10^{-1}$ and 6.37${\times}10^{-2}$[${\Omega}$ cm] at room temperature, respectively. The electrical resistivity of mono SiC, SiC+15[vol.%]$ZrB_2$. SiC+20[vol.%]$ZrB_2$ and SiC+25[vol.%]$ZrB_2$ are Negative Temperature Coefficient Resistance(hereafter, NTCR) in temperature ranges from 25[$^{\circ}C$] to 100[$^{\circ}C$]. The declination of V-I characteristics of SiC+20[vol.%]$ZrB_2$ composite is 3.72${\times}10^{-1}$. It is convinced that SiC+20[vol.%]$ZrB_2$ composite by SPS can be applied for heater or electrode above 1000[$^{\circ}C$]

• Journal of Sensor Science and Technology
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• v.22 no.3
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• pp.191-196
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• 2013

A particulate matter sensor fabricated by MEMS process is proposed. It is developed to accommodate Euro6 on-board diagnostics regulation for diesel automobile. In the regulation, emission of diesel particulate matter is restricted to 9 mg/km. Particulate matter sensor is designed to use induced charges by charged particulate matter. To increase sensitivity of the sensor, groove is formed on sensor surface because wider surface area generates more induced charges. Sensitivity of the sensor is measured 10.6 mV/(mg/km) and the sensor shows good linearity up to 15.7 mg/km. Also its minimum detectable range is about 0.25 mg/km. It is suitable to detect failure of a diesel particulate filter which should filter particulate matter more than 9 mg/km. For removing accumulated particulate matter on the sensor which can disturb normal operation, platinum heater is designed on the backside of the sensor. The developed sensor can sense very low amount of particulate matter from exhaust gas in real-time with good linearity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.788-791
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• 2002

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.