• Korean Journal of Materials Research
• /
• v.18 no.6
• /
• pp.339-346
• /
• 2008

Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

• Clean Technology
• /
• v.18 no.4
• /
• pp.440-445
• /
• 2012

15 carbon footprint product (CFP) schemes, including Korea Carbon Footprint Label, UK Carbon Trust's Carbon Reduction Label and Japan CFP are implemented in the world. A CFP describes green house gases (GHGs) emissions emitted throughout product's life cycle and is intended to reduce GHGs emissions by labeling a CFP result on product. This study calculates Korea, UK and Japan CFP result of vacuum cleaner, detergent, packagin material in order to analyze the Korea, UK and Japan CFP standards. Our results demonstrate significant differences among then calculated results because of criteria, emission factors, etc. Therefore, there are many difficulties in providing various CFP results and the international standard and guidelines for product category are needed.

• Journal of the Korean Solar Energy Society
• /
• v.23 no.2
• /
• pp.59-70
• /
• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615{\AA}$ and $11.025{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $5.01\times10^{17}cm^{-3}$ and $245cm^2/V{\cdot}s$ at 293K. respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T)=1.7998 eV-($8.7489\times10^{-4}$ eV/K)$T^2$/(T+335K). After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU},\;V_{Se},\;Cu_{int}$ and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2$/GaAs did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Korean Journal of Agricultural Science
• /
• v.4 no.2
• /
• pp.126-140
• /
• 1977

Present studies were carried out for breeding cold resistant clones of Citrus, improving overwintering techniques of Citrus in Jeju island as well as other southern region, Result obtained were as follows 1. In the vinyl house covered with two sheets of straw mat, 12 indivuals were found as non-injury and 15 were slightly injured by leaf freeging test at $-9^{\circ}C$ for 2 hours treatment. 2. In the condition of vinyl house covered with straw mat and viny film mulching and heat-in by sun-light, the inside temperature of vinyl house were not lowered below $-3^{\circ}C$ and the ground temperatura in vinyl house keeps above $0^{\circ}C$ during winter though outdoor temperature were lower by $-15^{\circ}C$(Daejeon area). 3. The vinyl tunnel inside the vinyl house and vinyl film mulching on ground position showed greater effectiveness for preventing heat loss from house but there were no significant difference between the color of vinyl film covered the tunnel. 4. In the vertical distribution of maximum temperature in vinyl house, the upper space was slightly higher than the lower position at high temperature condition, while minimum temperature was distributed as higher as the middle position, ground surface and upper position in order at low temperature condition 5. In the horizontal distribution of temperature in vinyl house, ground and surface-temperature of north side was lower than the other sides, and citrus planted within 30cm from north side wall died by cold injury and in the other side near wall appeared slight symptom of cold injury. 6. The insulating trench ($30{\times}30{\times}30cm$) packed with straw bundle installed under north wall might be effective to prevent heat loss of ground temperature. 7. In cloudy and snowy day, the temperature difference between indoor and outdoor were less, and the indoor temperature were maintained highly during night due to the effect of prevention of heat loss. 8. The highest temperature in a day was observed at about P.M. 3 both inside and outside of vinyl house and the lowest temperature was observed at about A.M. 6. The difference between the highest and lowest temperature of indoor in a sunny day was $19^{\circ}C$, compared with $9^{\circ}C$ on a cloudy or snowy day in late November. Especially, lowering of temperature in a snowy day was so less that the curve of temperature change was comparatively constant, 9. If the effective methods of citrus cultivation in vinyl house with improved clone such as hardiness. semi-dwarf and spur type are applied, it might be possible to cultivate the citrus tree safely in Jeju island as well as other southern rejion and to magnity the cultivation of citrus tree.

• Electrical & Electronic Materials
• /
• v.12 no.7
• /
• pp.7-11
• /
• 1999

Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).

• Journal of Korean Tunnelling and Underground Space Association
• /
• v.21 no.5
• /
• pp.587-609
• /
• 2019

Short-and long-term stabilities of bentonite, favored material as buffer in geological repositories for high-level waste were reviewed in this paper in addition to alternative design concepts of buffer to mitigate the thermal load from decay heat of SF (Spent Fuel) and further increase the disposal efficiency. It is generally reported that the irreversible changes in structure, hydraulic behavior, and swelling capacity are produced due to temperature increase and vapor flow between $150{\sim}250^{\circ}C$. Provided that the maximum temperature of bentonite is less than $150^{\circ}C$, however, the effects of temperature on the material, structural, and mineralogical stability seems to be minor. The maximum temperature in disposal system will constrain and determine the amount of waste to be disposed per unit area and be regarded as an important design parameter influencing the availability of disposal site. Thus, it is necessary to identify the effects of high temperature on the performance of buffer and allow for the thermal constraint greater than $100^{\circ}C$. In addition, the development of high-performance EBS (Engineered Barrier System) such as composite bentonite buffer mixed with graphite or silica and multi-layered buffer (i.e., highly thermal-conductive layer or insulating layer) should be taken into account to enhance the disposal efficiency in parallel with the development of multilayer repository. This will contribute to increase of reliability and securing the acceptance of the people with regard to a high-level waste disposal.