• Journal of electromagnetic engineering and science
• /
• v.10 no.4
• /
• pp.316-321
• /
• 2010

This paper presents a novel fourth harmonic mixer with new structure. The traditional 3-ports fourth harmonic mixer and the novel fourth harmonic mixer are designed by ADS, HFSS and CST simulator. The mixers have been fabricated and tested. The size of the traditional 3-ports fourth harmonic mixer is $12{\times}15$ mm, and the best conversion loss is 18.7 dB according to the measurement. Since the traditional 3-port mixer size is too large to be ranked, we design a novel fourth harmonic mixer for imaging system. The width of the mixing module in the novel fourth harmonic mixer is only 3.65 mm, and this size is fully capable to meet the mixer unit space which is not greater than 5 mm. The simulation result shows that the mixer has good performance, and the experiment result shows that the best conversion loss of the novel fourth harmonic mixer is 16.3 dB at RF signal of 91.3 GHz.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.2 no.1
• /
• pp.1-9
• /
• 2007

In this paper, a third-order harmonic mixer is designed using frequency multiplier theory for the Ka-band. The gate bias voltage is selected by frequency multiplier theory to maximize the third-order harmonic element ofthe fundamental LO frequency in the proposed mixer. The designed mixer has a gate mixer structure composed of a gate terminal input for the fundamental local signal ($f_{LO}$), RF signal (${RF}$) and a drain terminal output for the harmonic frequency ($3f_{LO}-f_{RF}$) respectively. The Ka-band harmonic mixer is designed and fabricated using a commercial GaAs MESFET device with a plastic package. The proposed mixer will provide a solution for the problems found in the high cost, complex circuitry in a conventional Ka-band mixer. The 33.5 GHz harmonic mixer has a -10 dB conversion gain by pumping 11.5 GHz LO with a +5 dBm level.

• Journal of electromagnetic engineering and science
• /
• v.3 no.1
• /
• pp.1-6
• /
• 2003

In this paper, a sub-harmonic dual-gate FET mixer is suggested to improve the isolation characteristic between LO and RF ports of an unbalanced mixer. The mixer was designed by using single-gate FET cascode structure and driven by the second harmonic component of LO signal. A dual-gate FET mixer has good isolation characteristic since RF and LO signals are injected into gatel and gate2, respectively. In addition, the isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer due to the large frequency separation between the LO and RF frequencies. As RF power was -30 ㏈m and LO power was 0 ㏈m, the designed mixer yielded the -47.17 ㏈m LO-to-RF leakage power level, 10 ㏈ conversion gain, -2.5 ㏈m OIP3, -12.5 ㏈m IIP3 and -1 ㏈m 1 ㏈ gain compression point. Since the LO-to-RF leakage power level of the designed mixer is as good as that of a double-balanced mixer, the sub-harmonic dual-gate FET mixer can be utilized instead.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.17 no.8 s.111
• /
• pp.719-724
• /
• 2006

In this paper, we designed the double conversion down mixer by using Half-LO frequency in 2.3 GHz band. The IF frequency is obtained by supplying two LO frequencies to HEMT in both gate type and resistive type. The proposed mixer uses Half-LO frequency the same way as conventional sub-harmonic mixers. However the proposed one uses fundamental component of Half-LO frequency in first stage instead of using second harmonic components of Half-LO frequency, and the IF frequency is obtained by resistive type mixer in second stage, thereby the proposed mixer can improve linearity in comparison with conventional active mixer. We can verify that the proposed mixer has an conversion loss of 5dBm and IIP3 of 16.25dBm by using 10 dBm Power.

• Proceedings of the IEEK Conference
• /
• 2002.07b
• /
• pp.1046-1049
• /
• 2002

In this paper, a sub-harmonic dual-gate FET mixer for IMT-2000 base-station was designed by using single-gate FET cascode structure and driven by the second order harmonic component of LO signal. The dual-gate FET mixer has the characteristic of high conversion gain and good isolation between ports. Sub-harmonic mixing is frequently used to extend RF bandwidth for fixed LO frequency or to make LO frequency lower. Furthermore, the LO-to-RF isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer because the frequency separation between the RE and LO frequency is large. As RF power is -30dBm and LO power is 0dBm, the designed mixer shows the -47.17dBm LO-to-RF leakage power level, 10dB conversion gain, -0.5dBm OIP3, -10.5dBm IIP3 and -1dBm 1dB gain compression point.

• Journal of IKEEE
• /
• v.8 no.1 s.14
• /
• pp.73-78
• /
• 2004

In this paper, it is designed for 5.8GHz Wireless LAN sub harmonic resistive mixer. Sub harmonic resistive mixer is constituted by advantage of sub harmonic mixer and resistive mixer. Sub harmonic resistive mixers mix harmonics of LO with RF and obtain IF frequency. Therefore, it was possible to use decreasing LO frequency than conventional mixers. And, Sub harmonic resistive mixer has low IMD because of using unbiased channel resistance of GaAs FET. When LO power is 13dBm, the conversion loss of manufactured sub harmonic resistive mixer is 10.67 dB. And IIP3 of mixer is 21.5dBm.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.30 no.10A
• /
• pp.958-964
• /
• 2005

In this thesis, the matching network at the local oscillator port of the sub-harmonic mixer is optimized for reducing the conversion loss. A downconverter for point to point system applications is designed and fabricated using the such sub-harmonic mixer. The sub-harmonic mixer achieved the conversion loss of 11.8 dB at the 12 dBm input power of the local oscillator and the isolation of less than -40 dB. The downconverter achieved the IF output power flatness of 2 dB and the total noise figure of 5.9 dB.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.15 no.5
• /
• pp.827-834
• /
• 2020

In this paper, a third-order harmonic mixer is designed using frequency multiplier theory for the microwave airborne radar. Unlike the basic mixer design method, the gate bias voltage, at which the third-harmonic component of the Local frequency (LO) is the maximum, is selected using a frequency multiplier theory to maximize the third-harmonic mixing component at the intermediate frequency (IF). The proposed harmonic mixer was designed and manufactured using a commercial GaAs MESFET device in a plastic package, and it was possible to improve the high conversion loss, circuit complexity, high cost, and manufacturing complexity of the existing microwave mixer. The harmonic mixer using the proposed design method has a -8 ~ -10 dB conversion loss by pumping 11.5 GHz LO with a +5 dBm level when operating from 33.0 GHz to 36.0 GHz and the 1-dB gain compression point (P1dB) of 0 dBm.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.3 no.2
• /
• pp.89-95
• /
• 2003

In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.40 no.7
• /
• pp.293-299
• /
• 2003

In this paper, we have proposed a high conversion and isolation characteristic V-band quadruple sub-harmonic mixer monolithic circuit which is designed and fabricated for the millimeter wave down converter applications. While most of the sub-harmonic mixers use a half of fundamental frequency, we adopt a quarter of the fundamental frequency. The proposed circuit is based on a sub-harmonic mixer with APDP(anti-parallel diode pair) and the 0.1 ${\mu}{\textrm}{m}$ PHEMT's (pseudomorphic high electron mobility transistors). Lumped elements at IF port provide better selectivity of IF frequency and increase isolation. Maximum conversion gain of 0.8 ㏈ at a LO frequency of 14.5㎓ and at a RF frequency of 60.4 ㎓ is measured. Both LO-to-RF and LO-to-IF isolations are higher than 50 ㏈. The conversion gain and isolation characteristic are the best performances among the reported quadruple sub-harmonic mixer operating in the V-band millimeter wave frequency thus far.