• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.178.1-178.1
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• 2014

본 연구에서는 RF스퍼터링법에 의하여 유리기판에 NiO를 40 nm만큼 증착시킨후, 30분 동안 각각 상온, $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$로 후 열처리 하였다. 박막의 전자적, 광학적 특성은 XPS (X-ray Photoelectron Spectroscopy), REELS (Reflection Electron Energy Loss Spectroscopy)와 UV-Spectrometer를 이용하여 =측정하였고, Hall Effect를 이용하여 전기적 특성을 측정하였다. XPS측정결과, $400^{\circ}C$ 후 열처리 한 NiO박막은 NiO 결합인 Ni2+가 줄어 들면서 금속 결합인 Ni0가 증가하면, 상온에서 띠틈이 4.0eV, 3.4eV로 줄어드는 것을 REELS로 확인 했다. 이 값은 UV-Spectrometer를 이용한 광학적 띠틈과 같음을 보였다. Hall Effect측정 결과 $400^{\circ}C$ 후 열처리한 샘플에서 P-type에서 N-type으로 바뀜을 보였으며, 비저항이 낮아지는 경향을 보였다. UV-Spectrometer를 이용한 광학적 특성을 측정해본 결과, 가시광선영역인 380 nm~780 nm에서의 투과율이 75%이상으로 투명전자소자로의 응용이 가능하다는 것을 보여 주었다.

• Journal of Magnetics
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• v.16 no.4
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• pp.449-452
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• 2011

A wrist wearable cuffless pulsimeter with a portable and small size apparatus using Hall effect is fabricated. The analysis of the pulse wave measured by the testing product of pulsimeter is done to measure the pulse rate and blood pressure. The blood pressure obtained by the puslimeter is compared with the practical values measured by electronic or mercury liquid blood pressure meters. The detail analysis of a pulse wave measured by a wrist wearable cuffless pulsimeter detecting the changes of the magnetic field can be used to develop a new diagnostic algorithm of blood pressure applying for oriental medical apparatus.

• Progress in Superconductivity and Cryogenics
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• v.23 no.2
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• pp.10-13
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• 2021

Superconductor-ferromagnet thin film heterostructure is an ideal system for studying the interplay between superconductivity and ferromagnetism. These two antagonistic properties combined in thin film heterostructure create interesting proximity effects such as spin-triplet superconductivity. Thin film heterostructure of optimally doped La_2-xSr_xCuO₄(LSCO) cuprate superconductor and SrRuO₃(SRO) ruthenate ferromagnet has been grown by pulsed laser deposition. Its temperature-dependent resistivity and Hall effect measurements show that our LSCO/SRO heterostructure has both superconductivity and ferromagnetism. In the Hall effect measurement results, we find additional hump-like structures appear in the anomalous Hall effect signal in the vicinity of superconducting transition. We conclude that giant magnetoresistance of the LSCO layer distorts the AHE signal, which results in a hump-like structure.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.2
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• pp.81-92
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• 1990

We developed the technologies of wuperlattice and HEMT structures grown by MOCVD, and their characterization. In the case of GaAs/AlGaAs superlattice, the periodicity, interface abruptness and Al compositional uniformity were confirmed through the shallow angle lapping technique and double crystal x-ray measurement. Photoluminesence spectra due to quantum size effect of isolated quantum wells were also observed. The heterojunction abruptness was estimated to be within 1 monolayer fluctuation by the analysis of the relation between PL FWHM(Full Width at Half Maximum) and well width. HEMT structure was successfully grown by MOCVD. The 2 dimensional electron gas formation at heterointerface in HEMT structure were evidenced through the C-V profile, SdH (Shubnikov-de Haas)oscillation and low temperature Hall measurement. Low field mobility were as high as $69,000cm^2/v.sec$ for a sheet carrier density of $5.5{\times}10^{11}cm^-2$ at 15K, and $41,200cm^2/v.sec$ for a sheet carrier density of $6.6{\times}10^{11}cm^-2$ at 77K. In addition, well defined SdH oscillation and quantized Hall plateaues were observed.

• Proceedings of the Korean Magnestics Society Conference
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• 2007.05a
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• pp.119.2-119.2
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• 2007

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.44-56
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• 1996

CuInTe2 synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of CuInTe2 were grown with the vertical Bridgman technique. The structure, Hall effect of the crystals were measured in the temperature range 30 to 293K. Both the polycrystals and single crystals of CuInTe2 were tetragonal in structure. The lattice constants of the polycrytals were measured as a=6.168Å and c=12.499Å, with c/a=2.026, these of the single crystals were measured as a=6.186Å and c=12.453Å, with c/a=2.013. The growth plane of the oriented single crystals was confirmed to be a (112) plane from the back-reflection Laue patterns. The Hall effect of the CuInTe2 single crystals was measured with the method of van der Pauw The Hall data of the samples measured at room temperature showed a carrier concentration of 2.14×1023holes/m3, a conductivity of 739.58Ω-1m-1, and a mobility of 2.16×10 -2m 2/V·s for the sample perpendicular to the c-axis. Values of 1.51×1023holes/m3, 717.55Ω-1m-1, and 2.97×10-2 m2/V·s were obtained for the sample parallel to the c-axis. The Hall coefficients for the samples both perpendicular and parallel to the c-axis in the temperature range 30K to 293K were always positive values. Thus the CuInTe2 single crystal was determined to be a p-type semiconductor.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.19-19
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• 2003

• 연구논문집
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• s.30
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• pp.159-168
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• 2000

In this research, MFL inspection system has been studied for the inspection of storage tank floor. The reference specimens having 20%, 40%, 60% and 80% slot's are fabricated using the carbon steel plates of a 6mm and 10mm thick. Powerful permanent magnets and Hall effect sensors are used to this application. Also, this paper presents a newly developed MFL scanning system. Conclusively, it is shown that our system is able to detect metal loss like a slot.

• Proceedings of the Korean Magnestics Society Conference
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• 2012.05a
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• pp.58-60
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• 2012

전류센서는 전기차 시대의 도래와 함께 전기차의 주용 부품으로써, 차량용 전기가 충방전하는 동안의 전류의 흐름을 측정하고, 전지관리시스템이 모니터링하는 목적으로 사용되어 진다. 본 논문은 Hall-effect를 이용하여 전류에 의해 의기된 자장이 자성코어에 집중되어 코어의 공극에서 측정되도록 전류센서를 구성하였다. 공극간의 자속을 측정하기 위하여, GaAs 게열의 Hall 센서가 사용되었다. 본 논문이 제안하는 센서는 측정 결과, 출력 특성의 선형성과 온도 안정성이 우수한 것으로 나타났다. 이는 제안된 전류센서가 산업용으로 적용이 가능함을 보여준다.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.96.2-96.2
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• 2010

The surface morphology and structural properties of polycrystalline silicon (poly-Si) films made in-situ aluminum induced crystallization at various substrate temperature (300~600) was investigated. Silicon films were deposited by hot-wire chemical vapor deposition (HWCVD), as the catalytic or pyrolytic decomposition of precursor gases SiH4 occurs only on the surface of the heated wire. Aluminum films were deposited by DC magnetron sputtering at room temperature. continuous poly-Si films were achieved at low temperature. from cross-section TEM analyses, It was confirmed that poly-Si above $450^{\circ}C$ was successfully grown on and poly-Si films had (111) preferred orientation. As substrate temperature increases, Si(111)/Si(220) ratio was decreased. The electrical properties of poly-Si film were investigated by Hall effect measurement. Poly-Si film was p-type by Al and resistivity and hall effect mobility was affected by substrate temperature.