• 한국재료학회지
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• 제4권1호
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• pp.113-116
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• 1994

이 논문은 glass기판에 Insb를 진공증착시킨 Insb박막 자기 sensor에 대하여 연구한 것으로 Hall 효과를 이용하여 자계 및 온도에 대한 Hall전압의 의존성을 조사하엿다. 일정전류구동에서 자계데 대한 Hall전압의 변화는 거의 직선적이었으나 정전압구동에서는 직선성에서 벗어나는 것을 보였다. 주위 온도가 증가함에 따라 Hall 전압이 감소하였으며 InSb 증착막을 자기 sensor로 사용하는 경우, 온도 특성을 고려할 필요가 있다.

• Journal of Electrical Engineering and Technology
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• 제11권4호
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• pp.889-897
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• 2016

This paper presents an improved approach for compensating rotor position signal displacement in brushless DC (BLDC) motors with misaligned hall-effect sensors. Typically, the hall-effect sensors in BLDC motors are located in each phase and positioned exactly 120 electrical degrees apart. However, limitations in mechanical tolerances make it difficult to place hall-effect sensors at the correct location. In this paper, a position error compensator to counteract the hall-effect sensor positioning error is proposed. The proposed position error compensator uses least squares error analysis to adjust the relative position error and back-EMF information to reduce the absolute offset error. The effectiveness of the proposed approach is verified through several experiments.

• Journal of Power Electronics
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• 제5권1호
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• pp.62-66
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• 2005

A simple fault correction method for rotor position detection of a brushless DC(BLDC) motor with trapezoidal back EMF(electromotive force) using a Hall effect latch unit is presented. The reason why the Hall effect latch unit does not operate properly during the startup of a BLDC motor is thoroughly explained. To solve this problem, a simple code change method and its hardware implementation issues are proposed and discussed.

• Journal of applied mathematics & informatics
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• 제25권1_2호
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• pp.51-66
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• 2007

A layer of compressible, rotating, elastica-viscous fluid heated & soluted from below is considered in the presence of vertical magnetic field to include the effect of Hall currents. Dispersion relation governing the effect of viscoelasticity, salinity gradient, rotation, magnetic field and Hall currents is derived. For the case of stationary convection, the Rivlin-Erickson fluid behaves like an ordinary Newtonian fluid. The compressibility, stable solute gradient, rotation and magnetic field postpone the onset of thermosolutal instability whereas Hall currents are found to hasten the onset of thermosolutal instability in the absence of rotation. In the presence of rotation, Hall currents postpone/hasten the onset of instability depending upon the value of wavenumbers. Again, the dispersion relation is analyzed numerically & the results depicted graphically. The stable solute gradient and magnetic field (and corresponding Hall currents) introduce oscillatory modes in the system which were non-existent in their absence. The case of overstability is discussed & sufficient conditions for non-existence of overstability are derived.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.6-9
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• 2000

InSb hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at $200^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.582-585
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• 2001

InSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 200$^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.21-24
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• 2000

lnSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.454-454
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• 2011

Graphene shows unusual electronic properties, such as carrier mobility as high as 10,000 $cm^2$/Vs at room temperature and quantum electronic transport, due to its electronic structure. Carrier mobility of graphene is ten times higher than that of Silicon device. On the one hand, quantum mechanical studies have continued on graphene. One of them is quantum Hall effect which is observed in graphene when high magnetic field is applied under low temperature. This is why two dimension electron gases can be formed on Graphene surface. Moreover, quantum Hall effect can be observed in room temperature under high magnetic field and shows fractional quantization values. Quantum Hall effect is important because quantized Hall resistances always have fundamental value of h/$e^2$ ~ 25,812 Ohm and it can confirm the quantum mechanical behaviors. The value of the quantized Hall resistance is extremely stable and reproducible. Therefore, it can be used for SI unit. We study to measure quantum Hall effect in CVD graphene. Graphene devices are made by using conventional E-beam lithography and RIE. We measure quantum Hall effect under high magnetic field at low temperature by using He4 gas closed loop cryostat.

• 한국세라믹학회지
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• 제54권6호
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• pp.506-510
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• 2017

One of the characteristics of polycrystalline graphene that determines its material properties is grain size. Mechanical properties such as Young's modulus, yield strain and tensile strength depend on the grain size and show a reverse Hall-Petch effect at small grain size limit for some properties under certain conditions. While there is agreement on the grain size effect for Young's modulus and yield strain, certain MD simulations have led to disagreement for tensile strength. Song et al. showed a decreasing behavior for tensile strength, that is, a pseudo Hall-Petch effect for the small grain size domain up to 5 nm. On the other hand, Sha et al. showed an increasing behavior, a reverse Hall-Petch effect, for grain size domain up to 10 nm. Mortazavi et al. also showed results similar to those of Sha et al. We suspect that the main difference of these two inconsistent results is due to the different modeling. The modeling of polycrystalline graphene with regular size and (hexagonal) shape shows the pseudo Hall-Petch effect, while the modeling with random size and shape shows the reverse Hall-Petch effect. Therefore, this study is conducted to confirm that different modeling is the main reason for the different behavior of tensile strength of the polycrystalline structures. We conducted MD simulations with models derived from the Voronoi tessellation for two types of grain size distributions. One type is grains of relatively similar sizes; the other is grains of random sizes. We found that the pseudo Hall-Petch effect and the reverse Hall-Petch effect of tensile strength were consistently shown for the two different models. We suspect that this result comes from the different crack paths, which are related to the grain patterns in the models.

• 한국자기학회지
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• 제3권4호
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• pp.269-276
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• 1993

Co/Pd 다층박막에서 두 sublayer의 층수비($n_{Co}/n_{Pd}$ = 1/4, 2/4, 3/4, 5/4), 기판온도 ($실온,\;100,\;150,\;200\;^{\circ}C$)를 달리하는 시료를 열진공 증착방법으로 제작하고 이에 대한 Hall 이력곡선을 측정하였다. 이때 나타나는 다야한 형태의 이력곡선을 Co와 Pd sublayer의 자화에 의한 transverse Hall effect 항과 magnetoresistivity 항이 중첩된 것으로 보고 이를 최적 fiting 방법으로 분해하였다. 이 결과 시료 전체의 계면 영역에 걸쳐 강자성과 반강자성인 두 자화상태가 공존하며 이들의 exchange anisotropy의 크기와 반강자성 물질에 의한 강자성 물질의 자벽 고착 효과에 따라 uniaxal 또는 unidirectional easy axis 형의 Hall 이력곡선을 형성하는 것으로 나타났다.