• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.591-596
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• 2002

In this work, epitaxial GaN is grown on sapphire substrate in AlGaN/GaN heterostructures. Deliberate oxygen doping of GaN grown by MOVPE has been studied. The electron concentration increased as a function of the square root of the oxygen partial Pressure. Oxygen is a shallow donor with a thermal ionization energy of $27\pm2 meV$ measured by temperature dependent Hall effects. A compensation ratio of $\theta$=0.3~0.4 was determined from Hall effect measurements. The formation energy of $O_N$ of $E^F$ =1.3eV determined from the experimental data, is lower than the theoretically predicted vague.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2004.03a
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• pp.282-286
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• 2004

Discharge current oscillation in a 20KHz range is a serious problem for Hall thruster performance, In our previous work, a possibility of controlling the oscillation amplitude by increasing the speed of neutral particles incoming to the ionization zone was predicted in our previous work. In this paper, the effects of diameter of anode orifice on the oscillation phenomena and the thrust performance were evaluated experimentally. The experimental results show that the measured amplitude of oscillation becomes smaller as the diameter of anode orifice. However, the larger orifice makes thrust performance lower. The results of numerical analysis of neutral particles show that these tendencies have much to do with neutral properties.

• Coupled systems mechanics
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• v.13 no.1
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• pp.21-41
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• 2024

This paper is concerned with the disturbances in a transversely isotropic new modified couple stress homogeneous thermoelastic rotating medium under the combined influence of Hall currents, magnetic fields, and mechanical sources represented by inclined loads. The application of Laplace and Fourier transform techniques are used for the derivation of analytical expressions for various physical quantities. As an application,the bounding surface is subjected to uniformly and linearly distributed force (mechanical force). Present model contains length scale parameters that can capture the size effects. Numerical inversion techniques has been used to provide insights into the system's behavior in the physical domain. The graphical representation of numerical simulated results has been presented to emphasize the impact of rotation and inclined line loads on the system, enhancing our understanding of the studied phenomena. Further research can extend this study to investigate additional complexities and real-world applications.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.20 no.3
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• pp.203-224
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• 2016

The heat and mass transfer characteristics of the unsteady hydromagnetic natural convection flow with Hall current and Soret effect of an incompressible, viscous, electrically conducting, heat absorbing and optically thin radiating fluid flow past a suddenly started vertical infinite plate through fluid saturated porous medium in a rotating environment are taken into account in this paper. Derivations of exact analytical solutions are aimed under different physical properties. The velocity, concentration and temperature profiles, Sherwood number and Nusselt number are easily examined and discussed via the closed forms obtained. Soret effect and permeability parameter tends to accelerate primary and secondary fluid velocities whereas hall current, radiation and heat absorption have reverse effect on it. Radiation and heat absorption have tendency to enhance rate of heat transfer at the plate. The results obtained here may be further used to verify the validity of obtained numerical solutions for more complicated transient free convection fluid flow problems.

• Journal of Sensor Science and Technology
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• v.3 no.1
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• pp.78-82
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• 1994

Single-phase $CuInS_{2}$ thin film were prepared by E-beam deposition and the effects of its annealing were investigated. The S/In/Cu was stacked from S, In and Cu by EBE method and then, In the nitrogen atmosphere, the stacked layer were annealed to convert chalcopyrite $CuInS_{2}$ thin films. and that result we obtained p-type Chalcopyrite $CuInS_{2}$ thin films, Its resistivity was $0.03{\sim}0.007{\Omega}cm$, Hall mobility was $0.07{\sim}0.1cm^{2}V^{-1}S^{-1}$ and Hall concentration was $10^{20-21}cm^{-3}$, respectively.

• Transactions of Materials Processing
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• v.12 no.4
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• pp.284-289
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• 2003

The effects of nitrogen on the deformation behavior of duplex stainless steel have been studied. The variation of strength was correlated with the characteristic microstructures pertaining to nitrogen. Analysis based on Hall-fetch relation confirmed that nitrogen enhances phase-boundary strengthening effect. The evolution of dislocation structure, slip traces and misorientation distribution during deformation were also characterized to elucidate the effect of nitrogen on inelastic deformation mechanism. It has been verified in this study that the higher nitrogen content provides a dual-phase microstructure with smaller strength difference between austenite and ferrite resulting into the earlier transfer of inelastic deformation from austenite to ferrite.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.808-813
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• 2009

Indium nitride thin films were deposited by the radio-frequency reactive magnetron sputtering method. The indium target was sputtered by the mixture flow ratio of $N_2$ to Ar, 9:1. The effects of growth temperature on the structural, optical, and electrical properties of the films were investigated. With increasing the growth temperature, the crystallinity of the films was improved, and the crystalline size was increased. The energy bandgap for the film grown at $25^{\circ}C$ was 3.63 eV, and the bandgap showed an increasing tendency on the growth temperature. The carrier concentration, Hall mobility and electrical resistivity of the films depended significantly on the growth temperature and the maximum Hall mobility of $32.3\;cm^2$/Vsec was observed for the film grown at $400^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.955-959
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• 2004

The effects of conduction band offset on 2 dimensional electron gas (2DEG) in N-InAlAs(AlAsSb)/InGaAs/InAlAs (AlAsSb) metamorphic heterostructures (MMHS) are studied. A combination of the Shubnikov-deHaas oscillations and the Hall measurements is used to investigate the electron transport properties of these structures. The mobility in the second subband is higher than that in the first subband in all heterostructures. This is attributed to the fact that electrons in the first subband we, on average, closer to the interface and are therefore scattered more strongly by ionized impurities. The results suggest that intersubband scattering rate is more dominant in structures with higher conduction band offset whereas alloy scattering is found to be more dominant in the higher band offset system.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.11 no.2
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• pp.1-2
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• 2007

• Geomechanics and Engineering
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• v.34 no.2
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• pp.209-220
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• 2023

In this study, a series of three-dimensional numerical analyses were carried out to investigate the penetration performance of a dynamically installed Hall anchor. The advanced coupled Eulerian-Lagrangian (CEL) technique was adopted to accurately simulate the large soil deformation during the vertical penetration of a Hall anchor. In total, 52 numerical analyses were conducted to investigate the relationship between anchor penetration depth and the initial kinematic energy. Moreover, a sensitivity analysis was performed to investigate the effects of soil shear strength and soil type on the penetration mechanism of a drop anchor under self-weight. There is a monotonic increase in the penetration depth with an increasing anchor weight when the topsoil of the riverbed is not subjected to erosion. On the other hand, all the computed depths significantly increase when soil erosion is taken into consideration. This is mainly due to an enhanced initial kinematic energy from an increased dropping depth. Both depths increase exponentially with the initial kinematic energy. An enhanced shear strength can potentially increase the side resistance and end-bearing pressure around a drop anchor, thus significantly reducing the downward penetration of a hall anchor. Design charts are developed to directly estimate penetration depth and associated plastic zone due to dynamically installed anchor at arbitrary soil shear strength and anchor kinematic energy.