• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.1-6
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• 2007

In this study, the pentacene thin films were prepared by the soluble process, and characterized fur the application of the organic thin film transistor(OTFT) device. To dissolve the pentacene material, two kinds of solvents such as toluene and chloroform were used, and the effects of these solvents on the properties of pentacene thin films coated on ITO/Glass substrate were investigated. Pentacene thin films were prepared by using spin-coating methode and characterized the surface morphology, crystalline and electrical properties. From the AFM measurement, the surface morphology of the pentacene film dissolved with chloroform was improved compared with the one dissolved with toluene solvent. XRD measurement showed that all prepared pentacene film samples were amorphous crystal phases without crystallization of the films. The electrical properties of the pentacene film dissolved with chloroform showed better results than the ones using toluene solvent by hall measurement system. The carrier concentration and the mobility values of pentacene films using chloroform solvent were found to be $-3.225{\times}10^{14}\;cm^{-3}$ and $3.5{\times}10^{-1}\;cm^2{\cdot}V^{-1}{\cdot}S^[-1}$, respectively. The resistivity was about $2.5{\times}10^2\;{\Omega}{\cdot}cm$.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.184-188
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• 1999

PbTe thin films of high quality were deposited on HF-treated Si(100) substrates at various substrate temperature by pulsed laser deposition technique. XRD patterns showed that PbTe layers were well-crystallized to a cubic phase with (h00) preferred orientation with the substrate temperature up to $300^{\circ}C$. PbTe films could not form at substrate temperature above $400^{\circ}C$ because of reevaporation of the Pb. According to AFM image, the surface of films was composed of small granular crystals and flat matrix. According to the increase of substrate temperature, the grain size at film surface becomes larger. By Hall-effect measurement, the carrier concentration and Hall mobility of n-type PbTe films grown by $T_{sub}=300^{\circ}C$ were $3.68{\times}10^{18}cm^{-3}$ and $148\;cm^2/Vs$, respectively.

• Journal of the Korean Magnetics Society
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• v.21 no.3
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• pp.104-107
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• 2011

We measured signals at the "Guan" region of a radially arterial pulse using the prototype of a clamping pulsimeter equipped with a Hall effect device, which is passed signals through the voltage detecting hard ware system. The important four different measuring times of the period, systolic, reflective, and notch peaks for a temporally pulse signal are obtained and compared each other from the analysis for an arbitrary pulse wave of one position of small size permanent magnet. It is possible to measure the reproducible pulse rate and blood pressure by using the cuffless clip type pulsimeter without an unpleasant oppressive feeling due to the use of pressurization.

• Journal of People, Plants, and Environment
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• v.22 no.1
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• pp.15-29
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• 2019

The purpose of this study is to investigate the effects of the exhibition displays and events of the Agro-healing Experience Hall in the Agricultural Technology Exhibition 2018 on satisfaction and revisit intention of visitors. A survey was conducted on visitors of the Agro-healing Experience Hall and the responses of 274 visitors excluding 26 cases with inappropriate responses were analyzed. For psychological measurement, the Perceived Restorativeness Scale (PRS), Profile of Mood States (POMS), level of plant gardening experience, satisfaction and loyalty were measured. There was a significant difference among age groups in all four factors of the PRS (repose, fascination, coherence, and legibility). In the case of education level, there was a significant difference in the three factors (repose, fascination, and legibility). In addition, average monthly income showed a significant difference among groups in the two factors (fascination and coherence). As a result of analyzing the mood states of visitors for the exhibition events of the Agro-healing Experience Hall, there was a significant difference among age groups only in the case of vigor (p < .05). As a result of analyzing the correlation between the level of plant gardening activities (3 factors) and PRS (4 factors) in the exhibition events of the Agro-healing Experience Hall, plant preference tendency and plant-related event showed a high positive correlation of 0.5 or more with repose of the PRS factors. A multiple regression analysis was conducted to investigate the effects of the level of plant gardening activities, PRS and POMS on the satisfaction and loyalty of visitors. As a result, it was found that in terms of relative explanatory power over independent variables affecting satisfaction and revisit intention, fascination had the greatest effect, followed by vigor, fatigue, and occupation (company employee). The results of this study suggest that exhibition events of the Agro-healing Experience Hall affect repose, fascination or vigor of visitors, and thus can be used positively to increase satisfaction and revisit intention of visitors.

• The Journal of the Acoustical Society of Korea
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• v.31 no.3
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• pp.115-128
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• 2012

This paper investigates the effects of diffuser on the acoustical parameters in music hall with consideration of the result of scattering coefficient measurement. A scale model hall of 600 seats with orchestra shell was used for experiments. The materials of 1:50 scale model was chosen through absorption coefficient measurement based on ISO 354. The model was matched to the computer simulation model in terms of reverberation time. In order to evaluate the effect of diffuser location, the measurements were accomplished with and without diffusers according to 7 configurations by diffuser-installed region; sidewall, balcony front, ceiling and so on. The following acoustical parameters were extracted from each measurement case; Reverberation time (RT), Early decay time (EDT), Clarity (C80), Center time (Ts), Sound strength (G) and Temporal diffusion (TD) from the auto-correlation function (ACF) of impulse responses. As a result, the absorption power and diffusion power were increased with number of diffusers. Accordingly RT, EDT and G were decreased by diffuser and the redirection of reflections was occurred briskly. Averaged TD was 6.05 to 6.30 by measurement cases. RT was found to be the most related factor to diffusion power (R = 0.94). The correlation between TD and EDT was high (R = 0.73). In addition, the effects of diffuser-installed location were discussed in terms of acoustical parameter variation.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2007.11a
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• pp.979-982
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• 2007

The effect of a scattering wall surfaces on sound diffusion can be assessed by determining the scattering and diffusion coefficients in the laboratory. However, the sound field in a concert hall including scattered reflections is different from the laboratory measurement condition. Therefore, there is a need for objective investigation of diffusion in real sound fields. In this paper, possible acoustical parameters of in-situ measurements are discussed.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.136-136
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• 2005

• Journal of the Korean institute of surface engineering
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• v.38 no.1
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• pp.7-13
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• 2005

Bismuth thin films were prepared on glass substrate with RF magnetron sputtering and effects of substrate temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth after nucleation and the onset of coalescense of grains at 393 K were observed with field emission secondary electron microscopy. Continuous thin films could not be obtained above 473 K because of grain segregation and island formation. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility. Resistivity of bismuth film has its minimum (about 0.7 x 10/sup -3/ Ωcm) in range of 403～433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to cancellation of the decrease of carrier density and the increase of mobility. The abrupt change of electrical properties of film annealed above 523 K was found to be caused by partial oxidation of bismuth layer in x-ray diffraction analysis.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.12
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• pp.46-53
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• 1997

The TMA gas sensors are fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. The hall effect measurement and AES analysis are carried out to investigate the effects of the sputtering gases and dopants which effect on the electrical resistivity and sensitivity to TMA gas. We measure the cfhanges of the surface carrier concentration, haall electron mobility, electrical resistivity, surface condition, and depth profile of the films. The ZnO-based thin film sensors sputtered in oxygen, or added with dopants showed a high sruface carrier concentration, film sensors sputtered in oxygen and doped with 4.0 wt.% $Al_{2}$O$_{3}$, 1.0 wt.% TiO$_{2}$, and 0.2 wt% v$_{2}$O$_{5}$ showed the highest surface carrier concentration of 5.952 * 10$^{20}$ cm$^{-3}$ , hall electron mobility of 176.7 cm$^{2}$/V.s, lowest electrical resistivity of 6*10$^{-5}$ .ohm.cm and highest sensitivity of 12. These results were measured at a working temperature of 300.deg. C to 8 ppm TMA gas.

• Journal of the Korean Institute of Telematics and Electronics
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• v.20 no.5
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• pp.50-55
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• 1983

A comprehensive study of the electrical properties of low-dose Si implants in Cr-doped GaAs substrates has been made using the Hall-effect/sheet-resistivity measurement technique for various ion doses and annealing temperatures. The samples were implanted at room temperature and annealed with silicon nitride encapsulants in a hydrogen atmosphere for 15 minutes. H-type layers were produced at all dose levels investigated, and the optimum annealing temperature was 850$^{\circ}C$ for all doses. The highest electrical activation efficiency was 89% for Cr-doped GaAs substrates. Depth profiles of carrier concentrations and mo-bilities are highly dependent upon ion dose and annealing temperature. Significant im-plantation damage still remains after an 800$^{\circ}C$ anneal, and a 900$^{\circ}C$ anneal produces signi-ficant outdiffusion as well as indiffusion of the implanted Si ions.