• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.74-77
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• 2002

In this paper we present a novel temperature compensated Hall effect power IC for accurate operation of wide temperature and high current drive of the motor coil. In order to compensate the temperature dependence of Hall sensitivity with negative temperature coefficient(TC), the differential amplifier has the gain consisted of epi-layer resistor with positive TC. The material of Hall device and epi-resistor is epi-layer with the same mobility. The variation of Hall sensitivity is -38% at 150$^{\circ}C$ and 88% at - 40$^{\circ}C$. But the operating point(B$\sub$op/) and release point(B$\sub$RP/) of the Hall power IC are within ${\pm}$25%. The experimental results show very stable and accurate performance over wide temperature range of -40$^{\circ}C$ to 125$^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.227-229
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• 1995

Using thermal oxide SiO$_2$ as a dielectrical isolation layer, SOI Hall sensors without pn junction isolation have been fabricated on Si/SiO$_2$/Si structures. The SOI structure was formed by SDB (Si- wafer direct bonding) technology. The Hall voltage and the sensitivity of Si Hall devices implemented on the SDB SOI structure show good linearity with respect to the appled magnetic flux density and supplied current. The product sensitivity of the SDB SOI Hall device is average 600V/V.T. In the trmperature range of 25 to 300$^{\circ}C$, the shifts of TCO(Temperature Coefficient of the Offset Voltage) and TCS(Temperature Coefficient of the Product Sensitivity) are less than ${\pm}$ 6.7x10$\^$-3/ C and ${\pm}$8.2x10$\^$04/$^{\circ}C$, respectively. These results indicate that the SDB SOI structure has potential for the development of Hall sensors with a high-sensitivity and high-temperature operation.

• The Journal of the Society of Korean Medicine Diagnostics
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• v.17 no.1
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• pp.63-76
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• 2013

The aims of this study are to investigate a logisitic regression equation of the vacuous pulse and the replete pulse for efficacy evaluation of clip-type pulsimeter by using magnetic Hall device. To evaluate the efficacy of clip-type pulsimeter by using magnetic Hall device as sensing the minute movement of a radial artery, one research clinical trial have been performed. The number of subject was 120, the clinical data of patients did treated with a normal statistical method. The systolic peak amplitude, the reflective peak amplitude and time, and the notch peak amplitude and time are analyzed major efficacy parameters to discern the vacuous pulse and the replete pulse. The equations included of five parameters such as systolic peak amplitude, the reflective peak amplitude and time, and the notch peak amplitude and notch amplitude time for determination of the vacuous pulse and the replete pulse were deducted by statistical logistic regression method. It suggests that the logistic regression equations are possible to develop the oriental algorithm for pulse diagnosis.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.2
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• pp.268-277
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• 1994

Current sensor using Hall device is an instrument of detecting a current by Hall effect. The existing current sensor is ordinarily worked by concentrating electromagnetism produced around the conducting wire turned iron core. The tiny curren, however, could not be accurately detected by the instrument owing to influence of residual magnetism exisisting in iron core, and the result of detecting is also somewhat on the large side. kAccordingly, We fabricated a new type of instrument minimizing the influence of residual magnetism existing in iron core and detected the tiny DC current accurately by taking advantage of magnetic modulation. The range of measuring DC current is 0[mA]-100[mA] and the maxiumm Linerity tolleance by the result of detecting current, can be reduced less than 3 percent.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.512-517
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• 1996

본 고는 반도체 재료가 갖는 자기효과를 이용하여 자기센서의 종류 및 특성등에 대하여 서술하였다. 반도체 LSI의 응용분야가 확대됨에 따라서 반도체 센서를 이용한 극소형화, 고성능화, 저가격화, 다기능화등이 가능하게 되었다. 이러한 상황에서 반도체를 이용한 홀 소자나 자기저항 소자와 같은 자기센서 등을 주변회로와 일체화시킨 초소형 시스템에 대한 연구가 활발하다. 특히 화합물 반도체는 자기센서에 적합한 물리적인 특성을 갖고 있기 때문에, 자기센서로 효율을 나타내고 있다. 반도체의 미세가공기술의 발전과 LSI제조기술의 발전을 이용하여 센서의 집적화, 저가격화를 가능하게 하였으며, 다른 종류의 반도체 센서들을 자기센서와 함께 하나의 칩위에 장착할 수 있는 응용집적센서(Application-specific Integrated Sensor)가 더욱 중요한 역할을 할 것이다.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.3
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• pp.335-340
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• 1996

The item and structure of current detector depends on the current in conductors. The Hall current detector of these detectors is to use the variation of Hall voltage to conductor's current and it is very difficult for the conventional type to detect small current. In this paper we study experimented-method that detect AC current by using the magnetic modulation method the current, 0[mA]~100[mA]. The experiments results in 5 percent against the conventional, 20 percent in linear error, 0.12[.DELTA.mV/.DELTA.mA] to conventional type, 50[.DELTA.mV/.DELTA.mA] in sensitivity. (author). 7 refs., 15 figs.

• Journal of the Korean Magnetics Society
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• v.21 no.3
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• pp.104-107
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• 2011

We measured signals at the "Guan" region of a radially arterial pulse using the prototype of a clamping pulsimeter equipped with a Hall effect device, which is passed signals through the voltage detecting hard ware system. The important four different measuring times of the period, systolic, reflective, and notch peaks for a temporally pulse signal are obtained and compared each other from the analysis for an arbitrary pulse wave of one position of small size permanent magnet. It is possible to measure the reproducible pulse rate and blood pressure by using the cuffless clip type pulsimeter without an unpleasant oppressive feeling due to the use of pressurization.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.7
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• pp.1127-1134
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• 1994

The analytical model for the induced Hall field in the magnetotransistor considering the diffusion of carriers has been proposed and verified by experiment and simulation. Previous models for the induced Hall field in the magnetotransistor do not consider the influence of the diffusion carrier transport. However, the carrier diffusion in the base region of magnetotransistors cannot be neglected and should be considered to evaluated the Hall field in the magnetotransistors accurately. We have measured the Hall voltage in the base region of the fabricated magnetotransistors. The measured values have been compared with the numerical results evaluated from our diffusion model as well as the calculated results from the conventional model. The evaluated Hall voltage from the diffusion model agrees well with the measured values while the sign of the Hall voltage calculated by the conventional model is opposite to that of the measured values in the saturation region. This discrepancy is due to the fact that the diffusion model considers the carrier diffusion while the conventional one does not. The Hall field model including the influence of carrier diffusion may be an important tool to optimize the device structure and to understand the operating principle of the magnetotransistor.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1434-1436
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• 1995

We designed and fabricated a highly sensitive magnetotransistor which employes the emitter region as a Hall plate for inducing Hall voltage across the emitter. The Hall voltage modulates the emitter basic junction bias on both sides of the emitter so that a large collector current difference is resulted. The specially designed $p^+$ ring around the emitter enhances accumulation of drifted electrons in the emitter and thus the Hall voltage. A relative sensitivity of 240/tesla is measured by operating the device in the saturation mode.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.49-52
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• 2000

In the current development of magnetic sensors based on the Hall effect, the following two approaches can be distinguished. The first, one tries to build better sensor based on conventional Hall devices. The innovations come through a better understand of the details If the operating principle and secondary effects, and through the application If ever-improving microelectronics technology. In the second approach, one hopes to build better sensors by making use of the Hall effect in active devices, such as magneto-transistors and MAGFET. In this paper, we study magnetic properties of Hall device fabricated with series and parallel multilayers.