• Korean Journal of Materials Research
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• v.12 no.3
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• pp.195-199
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• 2002

Planar Hall effect of ferromagnetic GaMnAs thin films was investigated for the first time. The films were grown in an optimized growth condition via molecular beam epitaxy at low temperatures. For the optimization of the growth conditions, we used reflection high-energy electron diffraction, electrical conductivity, double crystal x-ray diffraction, and superconducting quantum interference device measurements techniques. We observed that the difference between the longitudinal resistance and the transverse resistance matches the planar Hall resistance. The ratio of the planar Hall resistance at saturation magnetic field to that at zero reached above 500%.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.21 no.12
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• pp.703-714
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• 2009

One of the biggest problems in smoke control systems for high-rise buildings is stack effect, but there are no recognized methods or measures to solve the problem of stack effect as yet. The stack effect can be overcome by forming the uprising current inside the stair hall properly, but there is a limit to the height in supplying into the stair hall the smoke control air volume to be supplied to a floor in case of escape from fire. The limit to the height can be extended by over-coming the stack effect by pressurizing the stair hall and the ancillary room simultaneously. It can also be anticipated that the stack effect can be overcome by connecting the air supply shaft to the stair hall at the top. As a result of computer simulations using a network type of tool, it is found that adequate performance can be achieved by pressurizing the stair hall only for a building of 190m or less, and up to 360m when pressurizing the stair hall and the ancillary room simultaneously. In all those cases, however, an overpressure venting damper is required which operates within a suitable range for venting the overpressure outside.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.234-237
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• 2001

FeSi$_2$/Si Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.871ev at 300 K. The Hall effect is a physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important Part for it application Various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.230-233
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• 2001

FeSi$_2$ Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.87leV at 300 K. The Hall effect is a Physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E.H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it application various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.53 no.4
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• pp.171-174
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• 2004

The $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = $8.1686{\AA}$, b = $9.0425{\AA}$, c = $8.0065{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity was 1.080e-$3{\Omega}cm$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• Progress in Superconductivity
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• v.4 no.1
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• pp.32-36
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• 2002

We have measured the Hall effect in infinite-layer Sr／sub 0.9／La／sub 0.1／$CuO_2$ thin films grown by molecular beam epitaxy. We do not observe $T^{2}$ dependence of the cotangent of Hall angle, which is commonly observed in other cuprate High-Tc superconductors. Therefore, this result cannot be interpreted within two different scattering mechanism based on charge-spin separation theory. The mixed-state Hall effect shows no sign anomaly, implying that tile hydrodynamic contribution of vortex core is negligibly small.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.4
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• pp.56-64
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• 2006

Generally, Permanent Magnet Brushless DC Motor(PM BLDC) is necessary the Hall-IC to detect the rotor position. But it will take place the operation standstill of motor or error of rotor position detection according to the circumference temperature, humidity, or limited surroundings. This paper propose the algorithm of rotor position detection only using one or two Hall-IC. Therefore we can estimate information of the others phase in sequence through a rotor instead of using three Hall-IC at 3 phase motor. This paper identify the same characteristics, performance and function of protection circuit by the proposed algorithm with the 3 phase PM BLDC motor in comparison with general method.

• The Journal of the Acoustical Society of Korea
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• v.38 no.2
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• pp.139-144
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• 2019

Various room acoustic parameters and their optimal values were proposed and verified as proper interpretations to the listeners' preference of concert hall sounds. However the listening environment has been changed since they were developed, and the listeners' preference may not be the same among countries of different cultural backgrounds. Actual listeners' preference should be applied to the design of a new concert hall. A survey on the listening preference was carried out for 22 music experts. A room acoustical design process was proposed which made the acoustical environment of a concert hall as close to the listeners' preferences.

• The Transactions of the Korean Institute of Power Electronics
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• v.9 no.6
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• pp.536-543
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• 2004

Slotless Permanent Magnet Brushless DC Motor(PM BLDC) with the characteristics of high speed and power density has been more widely used In Industrial and factory machine. Generally, PM BLDC meter is necessary that the three Hall-lCs evenly be distributed around the stator circumference in case of the 3 phase motor. The Hall-ICs are set up in PM BLDC Motor to detect the main flux from the rotor. therefore the output signal from Hall-ICs is used to drive a power transistor to control the stator winding current. However, instead of using three Hall-ICs, if it used only one Hall-IC, we can estimate information of the others phase in sequence through a rotor This paper identified the characteristics and performance by using one Hall-IC with the 3-phase, 2-pole, 6-slot PM BLDC motor.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.94-94
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• 1999

반도체 Hall 효과를 이용하여 자계를 검출하여 이를 전압신호로 출력하는 자기센서로는 주로 GaAs, InSb, InAs 등의 박막이 사용되고 있다. 자기센서의 응용분야가 최근에는 직류전류의 무접촉 검출, 자동차의 무접촉 회전 검출, 산업용 기계의 제어용 무접촉 위치검출 분야로 확대되고 있어 그 수요가 급증하고 있다. 이중 Hall 소자의 응용분야중 많은 활용이 기대되고 있는 자동차용 무접촉 센서는 -4$0^{\circ}C$~15$0^{\circ}C$의 온도범위에서 안정하게 작동하여야 하므로 온도 안정성이 매우 중요하다. 그러나 Hall 소자 시장의 80%를 점유하고 있는 InSb Hall 소자는 온도가 올라감에 따라 저항이 급격히 낮아지는 성질을 가지고 있으므로 10$0^{\circ}C$ 이상의 온도에서 사용하는 것이 불가능하다. 한편 InAs(에너지갭~0.18eV)는 InSb보다 에너지 갭이 크므로 고온에서도 작동이 가능하고 자계변화에 따른 출력의 직진성이 매우 좋다는 장점을 가지고 있다. 이러한 InAs Hall 소자를 실현하기 위해서 가장 중요한 것이 고품위의 InAs의 박막 성장기술이다. InAs 박막을 성장하기 위해서 사용되고 있는 기판은 GaAs이다. 그러나 GaAs 기판과 InAs 박막 사이에는 약 7% 정도의 격자부정합이 존재하기 때문에 높은 이동도를 가지는 고품위 박막을 성장시키기가 매우 어렵다. 이에 본 연구에서는 분자선에피택시 방법을 이용하여 GaAs 기판위에 고품위의 InAs 박막을 성장하는 기술을 연구하였으며, 성장된 InAs 박막의 특성을 DCX 및 Hall effect 등으로 조사하였다. InAs 박막 성장시 기판은 <0-1-1> 방향으로 2$^{\circ}$ off 된 GaAs(100)를 사용하였다. InAs 박막성장시 기판온도는 48$0^{\circ}C$로 하고 GaAs buffer 두께는 2000$\AA$로 하여 As flux 및 Si doping 농도등을 변화시켰다. 그 결과 Si doping 농도 2.21$\times$1017/am에서 10,952cm2/V.s의 이동도를 얻었다.